Data Sheet 60 GHz Millimeterwave Transmitter, 57 GHz to 64 GHz HMC6300 FEATURES GENERAL DESCRIPTION Frequency band: 57 GHz to 64 GHz RF signal bandwidth: up to 1.8 GHz Output power for 1 dB compression: 15 dBm Gain: 5 dB to 35 dB Digital and analog RF and IF gain control Integrated frequency synthesizer Integrated image reject filter Partially external loop filter Support for external local oscillator (LO) On-chip temperature sensor Support for 256 QAM modulation Integrated minimum shift keying (MSK) modulator Universal analog I/Q baseband interface 3-wire serial digital interface 65-ball, RoHS compliant, wafer level ball grid array The HMC6300 is a complete millimeterwave transmitter integrated circuit in a 6 mm × 4 mm RoHS compliant wafer level ball grid array (WLBGA) that operates from 57 GHz to 64 GHz with up to 1.8 GHz modulation bandwidth. An integrated synthesizer provides tuning in 250 MHz, 500 MHz, or 540 MHz steps with excellent phase noise to support up to 64 QAM modulation. Optionally, an external LO can be injected allowing for user selectable LO characteristics or phase coherent transmit and receive operation, as well as modulation up to 256 QAM. Support for a wide variety of modulation formats is provided through a universal analog baseband I/Q interface. The transmitter chip optionally supports dedicated frequency-shift keying (FSK), minimum shift keying (MSK), and on-off keying (OOK) modulation formats for lower cost and lower power serial data links without the need for high speed data converters. APPLICATIONS A differential output provides up to 15 dBm linear output power into a 100 Ω load. Single-ended operation is also supported up to 12 dBm. Together with the HMC6301, a complete 60 GHz transceiver chipset is provided for multiple Gbps operation in the unlicensed 60 GHz ISM band. Small cell backhaul 60 GHz industrial, scientific, and medical (ISM) band data transfer Multiple Gbps data communication WiGig/802.11ad radio High definition video transmission Radar/high resolution imaging FM_PI FM_MI FM_PQ FM_MQ BB_IP BB_IM BB_QP BB_QN FUNCTIONAL BLOCK DIAGRAM MSK MOD HMC6300 RFOUT_P PA DRIVER IF AMP 90° 180° RFOUT_N ×3 ÷2 DIV CP PFD REFCLK_P EXTLO_N LPF DATA CLK REFCLK_N MUX EXTLO_P SCANOUT INTERFACE SERIAL 14423-001 DETOUT Figure 1. Rev. B Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. 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HMC6300 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................7 Applications ....................................................................................... 1 Pin Configuration and Function Descriptions..............................8 General Description ......................................................................... 1 Typical Performance Characteristics ........................................... 10 Functional Block Diagram .............................................................. 1 Theory of Operation ...................................................................... 13 Revision History ............................................................................... 2 Register Array Assignment and Serial Interface .................... 13 Specifications..................................................................................... 3 Transmitter Register Array Assignments ................................ 14 Electrical Specifications, 57 GHz to 63 GHz ............................ 3 Synthesizer Settings.................................................................... 20 Electrical Specifications, 63 GHz to 64 GHz ............................ 4 Applications Information .............................................................. 22 Recommended Operating Conditions ...................................... 5 Outline Dimensions ....................................................................... 25 Power Consumption .................................................................... 6 Ordering Guide .......................................................................... 25 Absolute Maximum Ratings ............................................................ 7 REVISION HISTORY 12/2016—Rev. A to Rev. B Changes to Figure 11 and Figure 14............................................. 11 Changes to Ordering Guide .......................................................... 25 9/2016—v00.0716 to Rev. A Updated Format .................................................................. Universal Added Minimum Gain Parameter, Table 1 ................................... 3 Changes to Recommended Operating Conditions, Table 3 ....... 5 Changes to Figure 17 ...................................................................... 14 Added Ordering Guide Section .................................................... 25 7/2016—Revision v00.0716: Initial Version Rev. B | Page 2 of 25 Data Sheet HMC6300 SPECIFICATIONS TA = 25°C, reference frequency = 71.4286 MHz, IF bandwidth = maximum, input impedance = 100 Ω differential, output impedance = 100 Ω differential, input signal level (high modulator gain) = −36 dBm on each of the four baseband inputs, power amplifier configuration is differential, unless otherwise noted. ELECTRICAL SPECIFICATIONS, 57 GHz TO 63 GHz Table 1. Electrical Specifications, 57 GHz to 63 GHz Parameter FREQUENCY STEP SIZE MODULATION BANDWIDTH GAIN Minimum Gain Maximum Gain Modulator Gain Control IF Gain Control RF Gain Control OUTPUT POWER Output Power for 1 dB Compression (P1dB) Saturated Output Power (PSAT) Output Power for 1 dB Compression (P1dB) Saturated Output Power (PSAT) Detector Power Range TEMPERATURE SENSOR RANGE SUPPRESSION AND REJECTION Sideband Suppression Image Rejection LO Suppression Carrier Suppression PHASE Phase Noise @ 100 kHz Offset @ 1 MHz Offset @ 10 MHz Offset @ 100 MHz Offset Phase-Locked Loop (PLL) Bandwidth POWER DISSIPATION Balanced Single-Ended Balanced, External LO Test Conditions/Comments With 71.4286 MHz reference clock With 142.857 MHz reference clock With 154.2857 MHz reference clock Full I/Q bandwidth Min 32.5 High and low gain settings Balanced into 100 Ω Balanced into 100 Ω Singled-ended into 50 Ω Singled-ended into 50 Ω Four levels 13.9 Using internal filter Rev. B | Page 3 of 25 10 Max Unit MHz MHz MHz GHz 5 35 9 14 22 dB dB dB dB dB 15 17 12 14 −10 to +15 dBm dBm dBm dBm dBm °C −40 15 At 6/7 of RF carrier frequency (3 × LO) Without calibration Typ 250 500 540 1.8 +85 30 40 20 30 dBc dBc dBc dBc −75 −93 −114 −122 300 dBc/Hz dBc/Hz dBc/Hz dBc/Hz kHz 1.0 0.88 0.75 W W W HMC6300 Data Sheet ELECTRICAL SPECIFICATIONS, 63 GHz TO 64 GHz Table 2. Electrical Specifications, 63 GHz to 64 GHz Parameter FREQUENCY STEP SIZE MODULATION BANDWIDTH GAIN Maximum Gain Modulator Gain Control IF Gain Control RF Gain Control OUTPUT POWER Output Power for 1 dB Compression (P1dB) Saturated Output Power (PSAT) Output Power for 1 dB Compression (P1dB) Saturated Output Power(PSAT) Detector Power TEMPERATURE SENSOR RANGE SUPPRESSION AND REJECTION Sideband Suppression Image Rejection LO Suppression Carrier Suppression PHASE Phase Noise @ 100 kHz Offset Phase Noise @ 1 MHz Offset Phase Noise @ 10 MHz Offset Phase Noise @ 100 MHz Offset PLL Bandwidth POWER DISSIPATION Balanced Single-Ended Balanced, External LO) Test Conditions/Comments With 71.4286 MHz reference clock With 142.857 MHz reference clock With 154.2857 MHz reference clock Full I/Q bandwidth Min Typ 250 500 540 1.8 30.5 32 9 14 22 dB dB dB dB 15 17 12 14 −10 to +15 dBm dBm dBm dBm dBm °C High and low gain settings Balanced into 100 Ω Balanced into 100 Ω Singled-ended into 50 Ω Singled-ended into 50 Ω Four levels 13.9 −40 15 At 6/7 of RF carrier frequency (3 × LO) Without calibration Using internal filter Rev. B | Page 4 of 25 10 Max +85 Unit MHz MHz MHz GHz 30 40 20 30 dBc dBc dBc dBc −75 −93 −114 −122 300 dBc/Hz dBc/Hz dBc/Hz dBc/Hz kHz 1.0 0.88 0.75 W W W Data Sheet HMC6300 RECOMMENDED OPERATING CONDITIONS Table 3. Parameter POWER SUPPLY Power Amplifier Driver Divider Mixer Intermediate Frequency Radio Frequency Variable Gain Amplifier Tripler VCO Digital Circuit Synthesizer INPUT VOLTAGE RANGE Serial Digital Interface Logic High Logic Low REFERENCE CLOCK Reference Clock, Positive Reference Clock, Negative BASEBAND I/Q In-Phase Baseband Input Negative Positive Quadrature Baseband Input Negative Positive BASEBAND I/Q, COMMON MODE In-Phase Baseband Input Negative Positive Quadrature Baseband Input Negative Positive MSK DATA MSK In-Phase Input Negative (Minus) Positive MSK Quadrature Input Negative (Minus) Positive MSK COMMON MODE ANALOG GAIN CONTROL RF Variable Gain Amplifier IF Variable Gain Amplifier EXTERNAL LO Positive Negative Symbol Min Typ Max Unit VCCPAN, VCCPAP VDDPA VCCDRV VCCDIV VCCMIX VCCIF VCCRFVGA VCCTRIP VCCVCO VDDD VDDSYN 3.9 2.565 2.565 2.565 2.565 2.565 2.565 2.565 2.565 1.3 1.3 4 2.7 2.7 2.7 2.7 2.7 2.7 2.7 2.7 1.35 1.35 4.1 2.835 2.835 2.835 2.835 2.835 2.835 2.835 2.835 1.48 1.48 V dc V dc V dc V dc V dc V dc V dc V dc V dc V dc V dc 0.9 −0.05 1.2 +0.1 1.4 +0.3 V V DATA, ENABLE, CLK, RESET REFCLK_P 3.3 V or 2.5 V LVPECL/LVDS, 1.2 V CMOS 3.3 V or 2.5 V LVPECL/LVDS, 1.2 V CMOS REFCLK_N V V V V BB_IM BB_IP 5 5 100 100 750 750 mV p-p mV p-p BB_QN BB_QP 5 5 100 100 750 750 mV p-p mV p-p BB_IM BB_IP 1.6 1.6 V V BB_QN BB_QP 1.6 1.6 V V FM_MI FM_PI 200 200 500 500 750 750 mV p-p mV p-p FM_MQ FM_PQ 200 200 500 500 1.1 750 750 mV p-p mV p-p V ANARFVGA ANAIFVGA 0.1 0.1 1.1 1.1 2.5 2.5 V V EXTLO_P EXTLO_N 0 0 3 3 5 5 dBm dBm Rev. B | Page 5 of 25 HMC6300 Data Sheet Parameter DRAIN CURRENT 1.35 V 2.7 V 4.0 V (Balanced) 4.0 V (Singled-Ended) Symbol Min Typ 10 277 58 29 POWER CONSUMPTION Table 4. Parameter VCCPAN VCCPAP VCCDRV VCCDIV VCCMIX VCCIF VCCRFVGA VCCTRIP VCCVCO VCCPA VCCD VCCSYN Voltage (V) 4.0 4.0 2.7 2.7 2.7 2.7 2.7 2.7 2.7 2.7 1.35 1.35 Typical Current (mA) 29 29 32 46 32 31 20 56 52 8 0.08 10 Rev. B | Page 6 of 25 Typical Power Consumption (mW) 116 116 86 124 86 84 54 151 140 22 0.1 13 Max Unit mA mA mA mA Data Sheet HMC6300 ABSOLUTE MAXIMUM RATINGS Table 5. Parameter VCCDRV VCCDIV VCCPAN, VCCPAP VCCVCO VCCRFVGA VCCIF VCCMIX VCCTRIP VDDSYN VDDPA VDDD Serial Digital Interface Input Voltage Thermal Resistance (RTH), Junction to Ground Paddle Baseband Inputs: BB, FM (Each) Storage Temperature Operating Temperature Reflow Temperature (Maximum Peak) ESD Sensitivity, Charged Device Model (CDM) Rating 2.85 V 2.85 V 4.2 V 2.85 V 2.85 V 2.85 V 2.85 V 2.85 V 1.6 V 2.85 V 1.6 V 1.5 V 9.57°C Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION 0.75 V p-p −55°C to +150°C −40°C to 85°C 260°C Class C3 (250 V) Rev. B | Page 7 of 25 HMC6300 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS HMC6300 1 2 3 4 5 6 7 8 9 10 11 12 A DETOUT REFOUT VCCDRV BB_QN BB_QP BB_IM BB_IP FM_MQ FM_PQ FM_MI FM_PI VCCDIV B VCCPAP RFB VCCMIX VCCIF GND GND GND GND EXTFIL_P EXTFIL_N VCCDIV VCCDIV GND VSSDIV VSSLPF_BIAS_PLL RFOUT_P VSSCP_PFD REFCLK_P REFOUT_N VSSREF_DIG REFCLK_N GND VREGOUT VDDSYN C D E F G VCCPAN VDDPA VCCRFVGA SCANOUT VDDD RESET VCCTRIP VSSVCO VSSVCO VCCVCO VCCVCO VCORCAP H VCCDRV ANARFVGA DATA ENABLE CLK ANAIFVGA VSSVCO EXTLO_N EXTLO_P VSSVCO VSSVCO VSSVCO GROUND AREA Figure 2. Pin Configuration Diagram Table 6. Pin Function Descriptions Pin No. A1 A2 A3, H1 A4 A5 A6 A7 A8 A9 A10 A11 A12, B11, B12 B1 B2 B3 B4 B5 to B8, C1, F1 Mnemonic DETOUT REFOUT VCCDRV BB_QN BB_QP BB_IM BB_IP FM_MQ FM_PQ FM_MI FM_PI VCCDIV VCCPAP RFB VCCMIX VCCIF GND Description Detector Output (0.6 V dc to 2.6 V dc). Detector Reference Output (0.6 V dc). Driver Power Supply (2.7 V dc). Quadrature Negative Baseband Input. This pin is dc-coupled and matched to 50 Ω. Quadrature Positive Baseband Input. This pin is dc-coupled and matched to 50 Ω. In-Phase Negative Baseband Input. This pin is dc-coupled and matched to 50 Ω. In-Phase Positive Baseband Input. This pin is dc-coupled and matched to 50 Ω. FSK Negative (Minus) Quadrature Input. This pin is dc-coupled and matched to 50 Ω. FSK Positive Quadrature Input. This pin is dc-coupled and matched to 50 Ω. FSK Negative (Minus) In-Phase Input. This pin is dc-coupled and matched to 50 Ω. FSK Positive In-Phase Input. This pin is dc-coupled and matched to 50 Ω. Divider Power Supply (2.7 V dc). Power Amplifier Power Supply (4.0 V dc). Detector Circuit Feedback. Mixer Power Supply (2.7 V dc). IF Power Supply (2.7 V dc). Analog Ground Connect. Rev. B | Page 8 of 25 14423-002 TOP VIEW (BALL SIDE DOWN) Data Sheet HMC6300 Pin No. B9 B10 C11 C12 D1 Mnemonic EXTFIL_P EXTFIL_N VSSDIV VSSLPF_BIAS_PLL RFOUT_P D11 D12 E1 VSSCP_PFD REFCLK_P RFOUT_N E11 E12 F11 F12 G1 G2 G3 G4 G5 G6 G7 G8, G9, H7, H10 to H12 G10, G11 G12 H2 H3 H4 H5 H6 H8 H9 VSSREF_DIG REFCLK_N VREGOUT VDDSYN VCCPAN VDDPA VCCRFVGA SCANOUT VDDD RESET VCCTRIP VSSVCO VCCVCO VCORCAP ANARFVGA DATA ENABLE CLK ANAIFVGA EXTLO_N EXTLO_P Description External PLL Filter (Positive). External PLL Filter (Negative). Digital Ground for the Synthesizer. Digital Ground for Synthesizer. Radio Frequency Output (Positive). This pin is ac-coupled and is differentially matched to 100 Ω. This output port is disabled when single-ended output is selected. Digital Ground for Synthesizer. External Reference Clock (Positive). This pin can be dc or ac matched to 50 Ω. Radio Frequency Output (Negative). This pin is ac coupled and is diff matched to 100 Ω. This pin is used if single-ended output is selected. Digital Ground for Synthesizer. External Reference Clock (Negative). This pin can be dc or ac matched to 50 Ω. VCO Regulator Output. Synthesizer Power Supply (1.3 V dc). Power Amplifier Power Supply (4.0 V dc). Power Amplifier Power Supply (2.7 V dc). RF VGA Power Supply (2.7 V dc). Serial Digital Interface Output (1.2 V CMOS). Digital Circuits Power Supply (1.3 V dc). Serial Digital Interface Reset (1.2 V CMOS). Tripler Power Supply (2.7 V dc). Digital Ground for the VCO. VCO Power Supply (2.7 V dc). External Capacitor Connection for the VCO Regulator. 0.1 V to 2.4 V RF VGA Analog Control. Connect Pin H2 to 2.7 V dc for digital control. Serial Digital Interface Data (1.2 V CMOS). Serial Digital Interface Enable (1.2 V CMOS). Serial Digital Interface Clock (1.2 V CMOS). 0.1 V to 2.4 V IF VGA Analog Control. Connect Pin H6 to 2.7 V dc for digital control. External LO (Negative) Input. External LO (Positive) Input. Rev. B | Page 9 of 25 HMC6300 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS –2 45 0 40 2 ATTENUATION (dB) 50 30 25 4 6 8 10 +85°C +25°C –40°C 10 57 58 +85°C +25°C –40°C 12 59 60 61 63 62 64 FREQUENCY (GHz) 14 2.00 14423-003 15 Figure 3. Maximum Gain vs. Frequency over Temperature, IF and RF Attenuation = 0 dBm 1.75 1.50 1.25 1.00 0.75 0.50 0.25 Figure 6. IF Attenuation vs. Analog Control Voltage over Temperature, Measurement Taken at 60 GHz, RF Attenuation = 0 dBm 0 0 2 +85°C +25°C –40°C 2 4 4 ATTENUATION (dB) 8 10 12 14 16 6 8 10 12 18 14 20 +85°C +25°C –40°C 24 2.2 2.0 1.8 16 1.5 1.3 1.0 0.8 0.5 0.3 0 ANALOG CONTROL VOLTAGE (V) 18 14423-004 22 0 1 2 3 4 5 7 6 9 8 10 11 12 13 14 15 DIGITAL SETTING Figure 4. RF Attenuation vs. Analog Control Voltage over Temperature, Measurement Taken at 60 GHz, IF Attenuation = 0 dBm 14423-007 ATTENUATION (dB) 6 Figure 7. IF Attenuation vs. Digital Setting over Temperature, Measurement Taken at 60 GHz, RF Attenuation = 0 dBm 20 0 +85°C +25°C –40°C 2 18 16 4 14 P1dB (dBm) 6 8 10 12 10 8 12 6 14 4 16 +85°C +25°C –40°C 2 18 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 DIGITAL SETTING Figure 5. RF Attenuation vs. Digital Setting over Temperature, Measurement Taken at 60 GHz, IF Attenuation = 0 dBm 0 57 14423-005 ATTENUATION (dB) 0 ANALOG CONTROL VOLTAGE (V) 14423-006 20 58 59 60 61 62 63 64 FREQUENCY (GHz) Figure 8. Output P1dB vs. Frequency over Temperature, IF and RF Attenuation = 0 dBm Rev. B | Page 10 of 25 14423-008 GAIN (dB) 35 Data Sheet HMC6300 25 25 +85°C +25°C –40°C 23 21 20 17 15 OIP3 (dBm) PSAT (dBm) 19 15 13 10 11 5 +85°C +25°C –40°C 7 58 59 60 61 62 63 64 FREQUENCY (GHz) 0 57 14423-009 +85°C +25°C –40°C SIDEBAND SUPPRESSION (dBc) 63 64 –35 –40 –45 –50 –35 –40 –45 –50 +85°C +25°C –40°C –55 59 60 61 62 63 64 FREQUENCY (GHz) –60 57 14423-010 58 –70 –70 –80 –80 PHASE NOISE (dBc/Hz) –60 –90 –100 –110 –120 +85°C +25°C –40°C FREQUENCY (Hz) 100M 1G 14423-011 10M Figure 11. Phase Noise vs. Frequency Offset over Temperature, Internal LO, Measurement Taken at 60 GHz 61 62 63 64 –90 –100 –110 –120 –130 1M 60 Figure 13. Sideband Suppression vs. Frequency over Temperature, IF and RF Attenuation = 0 dBm –60 100K 59 FREQUENCY (GHz) Figure 10. Carrier Suppression vs. Frequency over Temperature, IF and RF Attenuation = 0 dBm 10k 58 14423-013 CARRIER SUPPRESSION (dBc) 62 –30 –55 PHASE NOISE (dBc/Hz) 61 –25 –30 –140 1k 60 Figure 12. OIP3 vs. Frequency over Temperature, Total POUT = 0 dBm, IF and RF Attenuation = 0 dBm –25 –130 59 FREQUENCY (GHz) Figure 9. Output Saturated Power (PSAT) vs. Frequency over Temperature, IF and RF Attenuation = 0 dBm –60 57 58 –140 1k +85°C +25°C –40°C 10k 100K 1M 10M FREQUENCY (Hz) 100M 1G 14423-014 5 57 14423-012 9 Figure 14. Phase Noise vs. Frequency Offset over Temperature, External LO, Measurement Taken at 60 GHz Rev. B | Page 11 of 25 HMC6300 Data Sheet 16 8 SENSOR READING OUTPUT VOLTAGE (V) 10 1 0.1 4 2 0 2 4 6 8 10 12 14 OUTPUT POWER (dBm) 16 18 20 1 –40 –30 –20 –10 14423-015 0.01 0 10 20 30 40 50 60 70 80 TEMPERATURE (°C) Figure 15. Detector Output Voltage vs. Output Power over Temperature, Measurement Taken at 60 GHz, and 1.15 kΩ Connecting DETOUT and RFB Pins Rev. B | Page 12 of 25 Figure 16. Temperature Sensor Reading vs. Temperature 90 14423-016 +85°C +25°C –40°C Data Sheet HMC6300 THEORY OF OPERATION An integrated frequency synthesizer creates a low phase noise LO between 16.3 GHz and 18.3 GHz. The step size of the synthesizer equates to 250 MHz steps at RF when used with a 71.42857 MHz reference crystal or 500 MHz if used with a 142.857 reference crystal. To support IEEE channels (ISM band) with a 540 MHz step size, use a 154.2857 MHz reference crystal. If the chip is configured for I/Q baseband input, these signals are quadrature modulated onto an 8 GHz to 9.1 GHz sliding IF using the synthesized LO divided by two. There are also options to input AM/FM/FSK/MSK waveforms directly to the on-chip IF modulators. The IF signal is then filtered and amplified with 14 dB of variable gain, then mixed with three times the LO frequency to upconvert to an RF frequency between 57 GHz and 64 GHz. Integrated notch filters attenuate the lower mixing product at 40 GHz to 46 GHz. Three RF amplifier stages provide gain to allow up to 15 dBm of linear and differential output power with 22 dB of variable gain. IF and RF gain can be controlled using either analog voltages or the digital SPI. For lower power consumption, half of the power amplifier can be disabled to run in a single-ended configuration; this drops the output power by 3 dB. An on-chip power detector can be used to monitor the rms output power. The detector output pin (DETOUT) is connected through an external resistor to the RFB pin. A resistor value of 1.15 kΩ is recommended for optimal coverage up to the P1dB point of the transmitter. The REFOUT pin provides the reference voltage for the detector, and the difference between DETOUT and REFOUT is used to estimate the output power. The phase noise and quadrature balance of the on-chip synthesizer is sufficient to support up to 64 QAM modulation. For higher order modulation (up to 256 QAM or less than 250 MHz step size), the HMC6300 can be operated using an external LO. The HMC6300 transmitter is ideal for FDD operation together with the HMC6301 receiver chip. However, both devices can support TDD operation by enabling and disabling the circuits. All of the enables are placed in register array, four of which allow for full chip enable or disable in one SPI write. There are no special power sequencing requirements for the HMC6300; all voltages are to be applied simultaneously. REGISTER ARRAY ASSIGNMENT AND SERIAL INTERFACE The register arrays for both the transmitter and receiver are organized into 32 rows of 8 bits. Using the serial interface, the arrays are written or read one row at a time, as shown in Figure 17 and Figure 18, respectively. Figure 17 shows the sequence of signals on the ENABLE, CLK, and DATA lines to write one 8-bit row of the register array. The ENABLE line goes low, the first of 18 data bits (Bit 0) is placed on the DATA line, and 2 ns or longer after the DATA line stabilizes, the CLK line goes high to clock in Data Bit 0. The DATA line should remain stable for at least 2 ns after the rising edge of CLK. A write operation requires 18 data bits and 18 clock pulses, as shown in Figure 17. The 18 data bits contain the 8-bit register array row data (LSB is clocked in first), followed by the register array row address (ROW 0 through ROW 23, 000000 to 001111, LSB first), the read/write bit (set to 1 to write), and finally the Tx Chip Address 110, LSB first). The Tx IC supports a serial interface running up to several hundred megahertz, and the interface is 1.2 V CMOS levels. Note that the register array row address is six bits, but only four are used to designate 32 rows, the two MSBs are 0. After the 18th clock pulse of the write operation, the ENABLE line returns high to load the register array on the IC; prior to the rising edge of the ENABLE line, no data is written to the array. The CLK line should have stabilized in the low state at least 2 ns prior to the rising edge of the ENABLE line. Rev. B | Page 13 of 25 HMC6300 Data Sheet TIME = 0 ENABLE 1 18 CLK 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 LSB 14423-017 MSB LSB MSB 17 CHIP ADDRESS ARRAY ADDRESS LSB DATA 16 MSB 0 DATA R/W = 1 Figure 17.Timing Diagram for Writing a Row of the Transmitter Serial Interface TIME = 0 ENABLE 1 27 CLK 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 DATA 0 1 2 3 4 5 6 7 SCAN OUT R/W = 0 14423-018 MSB READ DATA LSB MSB MSB LSB LSB CHIP ADDRESS ARRAY ADDRESS MSB LSB WRITE DATA = (xxxxxxxx) Figure 18. Timing Diagram for Reading a Row of the Transmitter Serial Interface TRANSMITTER REGISTER ARRAY ASSIGNMENTS In the following table, N/A means not applicable. All register arrays are read/write, unless otherwise indicated. Table 7. Transmitter Register Array Assignments Register Array Row and Bit ROW0 ROW1 ROW1, Bit 7 ROW1, Bit 6 ROW1, Bit 5 ROW1, Bit 4 ROW1, Bit 3 ROW1, Bit 2 ROW1, Bit 1 ROW1, Bit 0 Internal Signal Name N/A Signal Function Not used. pa_sel_vgbs<3> pa_sel_vgbs<2> pa_sel_vgbs<1> pa_sel_vgbs<0> ifvga_q_cntrl<0> pa_sel_vref<2> pa_sel_vref<1> pa_sel_vref<0> Controls the regulator for the base voltage of the power amplifier output transistors. ROW1, Bits[7:3] = 1100 for normal operation. Controls the bias current for the power amplifier output transistors. ROW1, Bits[2:0] = 010 for normal operation. Rev. B | Page 14 of 25 Data Sheet Register Array Row and Bit ROW2 ROW2, Bit 7 ROW2, Bit 6 ROW2, Bit 5 ROW2, Bit 4 ROW2, Bit 3 ROW2, Bit 2 ROW2, Bit 1 ROW2, Bit 0 ROW3 ROW3, Bit 7 ROW3, Bit 6 ROW3, Bit 5 ROW3, Bit 4 ROW3, Bit 3 ROW3, Bit 2 ROW3, Bit 1 ROW3, Bit 0 ROW4 ROW4, Bit 7 ROW4, Bit 6 ROW4, Bit 5 ROW4, Bit 4 ROW4, Bit 3 ROW4, Bit 2 ROW4, Bit 1 ROW4, Bit 0 ROW5 ROW5, Bit 7 ROW5, Bit 6 ROW5, Bit 5 ROW5, Bit 4 ROW5, Bit 3 ROW5, Bit 2 ROW5, Bit 1 ROW5, Bit 0 ROW6 ROW6, Bit 7 ROW6, Bit 6 ROW6, Bit 5 ROW6, Bit 4 ROW6, Bit 3 ROW6, Bit 2 ROW6, Bit 1 ROW6, Bit 0 ROW7 ROW7, Bit 7 ROW7, Bit 6 ROW7, Bit 5 ROW7, Bit 4 HMC6300 Internal Signal Name Signal Function pa_sel_alc_dac<3> pa_sel_alc_dac<2> pa_sel_alc_dac<1> pa_sel_alc_dac<0> pa_sep_pa_pwrdn_fast pa_pwrdwn_fast pa_se_sel Factory diagnostics; ROW2. Bits[7:4] = 1111 for normal operation. power_det_pwrdn Active high for normal operation. Active high for normal operation. Control for Tx output interface; active low for differential Tx output; active high for Tx single-ended output. Active low to enable Tx power detector. driver_bias<2> driver_bias<1> driver_bias<0> driver_bias2<2> driver_bias2<1> driver_bias2<0> en_ifmix_HiCG en_tempflash Controls the bias current for the power amplifier driver. ROW3, Bits[7:5] = 111 for normal operation. driver_pwrdn upmixer_pwrdn ifvga_pwrdn divider_pwrdn pa_pwrdn rfvga_pwrdn tripler_pwrdn if_upmixer_pwrdn Active high to power down the driver amplifier. Active high to power down the upmixer. Active high to power down the IF VGA. Active high to power down the divider. Active high to power down the power amplifier. Active high to power down the RF VGA. Active high to power down the tripler. Active high to power down the IF upmixer. tripler_bias<13> tripler_bias<12> tripler_bias<11> tripler_bias<10> tripler_bias<9> tripler_bias<8> tripler_bias<7> tripler_bias<6> Controls bias of frequency tripler. ROW5, Bits[7:0] = 11111111 for normal operation. tripler_bias<5> tripler_bias<4> tripler_bias<3> tripler_bias<2> tripler_bias<1> tripler_bias<0> N/A Controls bias of frequency tripler. ROW6, Bits[7:2] = 111011 for normal operation. ifvga_vga_adj<3> ifvga_vga_adj<2> ifvga_vga_adj<1> ifvga_vga_adj<0> IF variable gain amplifier gain control bits. ROW7, Bits[7:4] = 0000 is highest gain and 1101 is lowest gain. Attenuation is ≈ 1.3 dB per step, ≈ 17 dB maximum. Controls the bias current for the Power Amplifier Predriver 2. ROW3, Bits[4:2] = 101 for normal operation. Active high to enable high gain mode in IF mixer. Active high to enable temperature sensor. Not used. Rev. B | Page 15 of 25 HMC6300 Register Array Row and Bit ROW7, Bit 3 ROW7, Bit 2 ROW7, Bit 1 ROW7, Bit 0 ROW8 ROW8, Bit 7 ROW8, Bit 6 ROW8, Bit 5 ROW8, Bit 4 ROW8, Bit 3 ROW8, Bit 2 ROW8, Bit 1 ROW8, Bit 0 ROW9 ROW9, Bit 7 ROW9, Bit 6 ROW9, Bit 5 Data Sheet Internal Signal Name ifvga_tune<3> ifvga_tune<2> ifvga_tune<1> ifvga_tune<0> Signal Function Controls the tuning of the IF filter for the variable gain amplifier. ROW7, Bits[3:0] = 1111 for normal operation. ifvga_bias<3> ifvga_bias<2> ifvga_bias<1> ifvga_bias<0> if_upmixer_tune<3> if_upmixer_tune<2> if_upmixer_tune<1> if_upmixer_tune<0> Controls the bias current of the IF variable gain amplifier. ROW8, Bits[7:4] = 1000 for normal operation. ifvga_q_cntrl<2> ifvga_q_cntrl<1> ifvga_q_cntrl<0> Controls the Q of the IF filter in the baseband to IF upmixer. ROW9, Bits[7:5] = 000 for the highest Q and highest gain. To reduce Q and widen bandwidth, increment ROW9, Bits[7:5] in sequence, as follows: 001 100 101 Not used. ROW9, Bit 4 ROW9, Bit 3 ROW9, Bit 2 ROW9, Bit 1 ROW9, Bit 0 ROW10 ROW10, Bit 7 N/A ROW10, Bit 6 ROW10, Bit 5 ROW10, Bit 4 ROW10, Bit 3 ROW10, Bit 2 if_refsel bg_monitor enDig_IFVGA_Gain_Control ipc_pwrdn if_bgmux_pwrdn ROW10, Bit 1 ROW10, Bit 0 ROW11 ROW11, Bit 7 ROW11, Bit 6 ROW11, Bit 5 ROW11, Bit 4 upmix_cal_pwrdn TempSensor_pwrdn ROW11, Bit 3 ROW11, Bit 2 ROW11, Bit 1 ROW11, Bit 0 ROW12 ROW12, Bit 7 ROW12, Bit 6 ROW12, Bit 5 ROW12, Bit 4 ROW12, Bit 3 enRFVGA_Ana RFVGA_ICtrl<2> RFVGA_ICtrl<1> RFVGA_ICtrl<0> enable_FM RFVGAgain<3> RFVGAgain<2> RFVGAgain<1> RFVGAgain<0> upmix_cal<7> upmix_cal<7> upmix_cal<7> upmix_cal<7> upmix_cal<7> Controls the tuning of the IF filter for the IF to RF upmixer. ROW8, Bits[3:0] = 1111 for normal operation. Active high to enable FSK/MSK modulation inputs. 0 = normal I/Q operation. Reserved for diagnostic purposes. ROW10, Bits[6:5] = 10 for normal operation. Active high to enable digital control of IFVGA gain. Active high to power down the chip current reference generator. Active high to power down one of three on-chip band gap references (IF) and associated mux. Active high to power down upmixer calibration. Active high to power down the temperature sensor. RF variable gain amplifier control bits. ROW11, Bits[7:4] gain settings as follows: 0000 = highest gain. 1111 = lowest gain. Attenuation is ≈ 1.3 dB/step, ≈ 17 dB maximum. Active high to enable analog gain control of RFVGA. Controls bias current of RF variable amplifier. ROW11, Bits[2:0] = 011 for normal operation. 3 × LO feedthrough calibration of RF upmixer. ROW12, Bits[7:0] = 01100100 for uncalibrated operation. Rev. B | Page 16 of 25 Data Sheet Register Array Row and Bit ROW12, Bit 2 ROW12, Bit 1 ROW12, Bit 0 ROW13 ROW14 ROW15 ROW16 ROW16, Bit 7 HMC6300 Internal Signal Name upmix_cal<7> upmix_cal<7> upmix_cal<7> N/A N/A N/A byp_synth_LDO ROW16, Bit 6 en_cpShort ROW16, Bit 5 ROW16, Bit 4 ROW16, Bit 3 en_cpCMFB en_cp_dump en_cpTRIST ROW16, Bit 2 ROW16, Bit 1 ROW16, Bit 0 en_cp en_synth_LDO enbar_synthBG ROW17 ROW17, Bit 7 ROW17, Bit 6 en_lockd_clk en_test_divOut ROW17, Bit 5 ROW17, Bit 4 ROW17, Bit 3 ROW17, Bit 2 en_vtune_flash en_reBuf_DC en_refBuf en_stick_div ROW17, Bit 1 en_FBDiv_cml2cmos ROW17, Bit 0 ROW18 ROW18, Bit 7 ROW18, Bit 6 ROW18, Bit 5 en_FBDiv ROW18, Bit 4 ROW18, Bit 3 en_extLO en_vcoPk ROW18, Bit 2 ROW18, Bit 1 ROW18, Bit 0 en_vco en_vco_reg enbar_vcoGB ROW19 ROW19, Bit 7 ROW19, Bit 6 ROW19, Bit 5 ROW19, Bit 4 ROW19, Bit 3 ROW19, Bit 2 N/A en_nb250m byp_vco_LDO N/A Signal Function Not used. Not used. Not used. Factory diagnostics. 0 = normal operation. Factory diagnostics. 0 = normal operation. Enables CMFB circuit for charge pump, set to 1 when synthesizer is in use. Enables auxiliary circuit for charge pump, set to 1 when synthesizer is in use. Factory Diagnostics. 0 = normal operation. Enables charge pump, set to 1 when synthesizer is in use. Enables LDO for synthesizer, set to 1 when synthesizer is in use. Factory diagnostics. 0 = normal operation. Enables lock detector for synthesizer, set to 1 when synthesizer is in use. Factory diagnostics. 0 = normal operation. Enables flash ADCs for VCO vtune port, set to 1 when synthesizer is in use. Enables dc coupling for reference clock buffer. Enables reference clock buffer, set to 1 when synthesizer is in use. Factory diagnostics. 0 = normal operation. Enables auxiliary circuit for the feedback divider chain, set to 1 when synthesizer is in use. Enables feedback divider chain, set to 1 when synthesizer is in use. Not used. Active high to enable, 250 MHz channel step size. Factory diagnostics. 0 = normal operation. Enables external LO, set to 0 when synthesizer is in use. Factory diagnostics. 0 = normal operation. Enables internal VCO, set to 1 when synthesizer is in use. Enables internal regulator for VCO, set to 1 when synthesizer is in use. Factory diagnostics. 0 = normal operation. Not used. Rev. B | Page 17 of 25 HMC6300 Data Sheet Register Array Row and Bit ROW19, Bit 1 Internal Signal Name refsel_synthBG ROW19, Bit 0 muxRef ROW20 ROW20, Bit 7 ROW20, Bit 6 ROW20, Bit 5 ROW20, Bit 4 ROW20, Bit 3 ROW20, Bit 2 ROW20, Bit 1 ROW20, Bit 0 ROW21 ROW21, Bit 7 ROW21, Bit 6 ROW21, Bit 5 ROW21, Bit 4 Signal Function Factory diagnostics. 1 = normal operation. Factory diagnostics. 0 = normal operation. N/A Fbdiv_code<6> Fbdiv_code<5> Fbdiv_code<4> Fbdiv_code<3> Fbdiv_code<2> Fbdiv_code<1> Fbdiv_code<0> Not used. Feedback divider ratio for the integer-N synthesizer based on Table 8 to Table 10. N/A Not used. refsel_vcoBG Factory diagnostics. 1 = normal operation. Sets VCO tank bias current. ROW21, Bits[3:0] = 0010 for normal operation. ROW21, Bit 3 ROW21, Bit 2 ROW21, Bit 1 ROW21, Bit 0 ROW22 ROW22, Bit 7 ROW22, Bit 6 ROW22, Bit 5 ROW22, Bit 4 ROW22, Bit 3 ROW22, Bit 2 ROW22, Bit 1 ROW22, Bit 0 ROW23 ROW23, Bit 7 ROW23, Bit 6 ROW23, Bit 5 ROW23, Bit 4 ROW23, Bit 3 ROW23, Bit 2 ROW23, Bit 1 ROW23, Bit 0 ROW24 (Read Only) ROW24, Bit 7 ROW24, Bit 6 ROW24, Bit 5 ROW24, Bit 4 ROW24, Bit 3 vco_biasTrim<3> vco_biasTrim<2> vco_biasTrim<1> vco_biasTrim<0> ROW24, Bit 2 ROW24, Bit 1 ROW24, Bit 0 ROW25 (Read Only) dn up center N/A Not used. vco_bandSel<4> vco_bandSel<3> vco_bandSel<2> vco_bandSel<1> vco_bandSel<0> Set for desired frequency. Table 8, Table 9, and Table 10 contain approximate band settings depending on the reference clock frequency. ROW22, Bits[4:0] = valid range 00000 to 10011. ICP_BiasTrim<2> ICP_BiasTrim<1> ICP_BiasTrim<0> vco_offset<0> vco_offset<1> vco_offset<2> vco_offset<3> vco_offset<4> Sets charge pump current. ROW23, Bits[7:5] = 011 for normal operation. Sets internal VCO output swing. ROW23, Bits[4:0] = 00010 for normal operation. N/A Not used. lockdet Monitor for lock detect. 1 = valid lock. Monitor VCO amplitude. Monitor VCO amplitude. Monitor VCO amplitude. Rev. B | Page 18 of 25 Data Sheet Register Array Row and Bit ROW25, Bit 7 ROW25, Bit 6 ROW25, Bit 5 ROW25, Bit 4 ROW25, Bit 3 ROW25, Bit 2 ROW25, Bit 1 ROW25, Bit 0 ROW26 (Read Only) ROW26, Bit 7 ROW26, Bit 6 ROW26, Bit 5 ROW26, Bit 4 ROW26, Bit 3 ROW26, Bit 2 ROW26, Bit 1 ROW26, Bit 0 ROW27 (Read Only) ROW27, Bit 7 ROW27, Bit 6 ROW27, Bit 5 ROW27, Bit 4 ROW27, Bit 3 ROW27, Bit 2 ROW27, Bit 1 ROW27, Bit 0 ROW28 ROW29 ROW30 ROW31 HMC6300 Internal Signal Name vtune_flashp<7> vtune_flashp<6> vtune_flashp<5> vtune_flashp<4> vtune_flashp<3> vtune_flashp<2> vtune_flashp<1> vtune_flashp<0> Signal Function VCO amplitude monitor (positive). vtune_flashn<7> vtune_flashn<6> vtune_flashn<5> vtune_flashn<4> vtune_flashn<3> vtune_flashn<2> vtune_flashn<1> vtune_flashn<0> VCO amplitude monitor (negative). N/A Not used. tempS<4> tempS<3> tempS<2> tempS<1> tempS<0> N/A N/A N/A N/A Thermometer encoded temperature reading. For ROW27, Bits[4:0], the temperature reading is as follows: 00000 = lowest temperature. 11111 = highest temperature. Not used. Not used. Not used. Not used. Rev. B | Page 19 of 25 HMC6300 Data Sheet SYNTHESIZER SETTINGS Table 8. Synthesizer Settings, IEEE Channels Using 154.2857 MHz Reference Frequency (GHz) 57.24 57.78 58.32 58.86 59.40 59.94 60.48 61.02 61.56 62.10 62.64 63.18 63.72 64.26 64.8 65.34 65.88 IEEE Channel Channel 1 Channel 2 Channel 3 Channel 4 Divider Setting, Fbdiv_Code<5:4>, ROW20, Bits[5:0] 001010 001011 001100 001101 001110 001111 010000 010001 010010 010011 010100 010101 010110 010111 011000 011001 011010 Typical Band Setting, vco_bandSel<4:0>, ROW22, Bits[4:0] 00001 00010 00010 00010 00011 00011 00100 00100 00101 00101 00101 00110 00110 00110 00111 00111 01000 Table 9. 500 MHz Channels Using 142.8571 MHz Reference Frequency (GHz) 56.5 57 57.5 58 58.5 59 59.5 60 60.5 61 61.5 62 62.5 63 63.5 64 Divider Setting 010001 010010 010011 010100 010101 010110 010111 011000 011001 011010 011011 011100 011101 011110 011111 100000 Rev. B | Page 20 of 25 Typical Band Setting 00001 00001 00010 00010 00010 00011 00011 00100 00100 00101 00101 00101 00110 00110 00110 00111 Data Sheet HMC6300 Table 10. 250 MHz Channels Using 71.42857 MHz Reference Frequency (GHz) 56.5 56.75 57 57.25 57.5 57.75 58 58.25 58.5 58.75 59 59.25 59.5 59.75 60 60.25 60.5 60.75 61 61.25 61.5 61.75 62 62.25 62.5 62.75 63 63.25 63.5 63.75 64 Divider Setting 0100010 0100011 0100100 0100101 0100110 0100111 0101000 0101001 0101010 0101011 0101100 0101101 0101110 0101111 0110000 0110001 0110010 0110011 0110100 0110101 0110110 0110111 0111000 0111001 0111010 0111011 0111100 0111101 0111110 0111111 1000000 Rev. B | Page 21 of 25 Typical Band Setting 00001 00001 00010 00010 00011 00011 00100 00100 00101 00101 00110 00110 00111 00111 01000 01000 01001 01001 01010 01010 01011 01011 01100 01100 01101 01101 01110 01110 01111 01111 01111 HMC6300 Data Sheet APPLICATIONS INFORMATION boards (PCBs) that provide on-board crystals, USB interface, supply regulators, and SMA cables for connectorized I/Q interfaces. Software is supplied to allow the user to read from and write to all chip level registers using graphical user interface (GUI) or to upload previously saved register settings. 14423-019 For more information about the HMC6300 evaluation kit, see the EK1HMC6350 User Guide. The EK1HMC6350 contains all that is required to set up a simplex 60 GHz millimeterwave link using standard RF cable interfaces for baseband input and output. The kit comes with two motherboard printed circuit Figure 19. Evaluation PCB Daughter Board Rev. B | Page 22 of 25 Data Sheet HMC6300 3 1 RFOUTN 2 RFOUTP 4MIL-BALUN_60GHz 92_MMPX-S50-0-1/111_NM-1 EXTLO_N J3 R1 1kΩ E1 RFOUTN D1 RFOUTP DEPOP C26 1µF DEPOP C30 1nF R4 1kΩ B9 B10 DEPOP H8 H9 SMA EXTLO_P J2 FMP_I FMM_I SMA ANA_RFVGA ANA_RFVGA GND GND TX_VCC_PA TX_VCC_RFVGA TX_VDDD TX_VCC_TRIP TX_VCC_TRIP GND TX_VCC_VCO TX_VCC_VCO GND TX_VDD_SYN NC GND TX_VCC_DIV TX_VCC_DIV TX_VCC_IF TX_VCC_MIX TX_VCC_DRV TX_VCC_DRV GND REF_OUT DECT_OUT GND PS_4V_1 PS_4V_1 1 3 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 37 39 41 43 45 47 49 51 53 55 57 59 GROUNDING J4 QTH-030-01-F-D-A PS_4V_2 PS_4V_2 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 48 50 52 54 56 58 60 GND GND GND GND GND GND GND GND GND GND GND GND GND GND R3 1kΩ U1 HMC6300 DATA ENABLE CLK TX_SCANOUT RESET BB_QM BB_QP A10 A11 RFB B2 TX_SCANOUT G4 RESET G6 DATA H3 ENABLE H4 CLK H5 ANA_IFVGA H6 ANA_RFVGA H2 TX_REFCLKP D12 BB_IM BB_IP TX_REFCLKN E12 C11 TX_REFCLKM TX_REFCLKP R5 0 C12 VSS_GND D11 E11 FMP_I FMM_I G8 FMP_Q FMM_Q G9 H7 GND H10 C15 1nF REF_OUT EXTFIL_P BB_QM EXTFIL_N BB_QP EXTLO_P TX_VDD_SYN F12 C24 1nF TX_VDDD G5 DECT_OUT REF_OUT A2 A4 A5 BB_QM BB_QP FMM_I BB_IM A6 A7 BB_IP BB_IM BB_IP A8 FMM_Q FMP_Q FMP_I FMM_Q RFB FMP_Q A9 RESET VREG_OUT DATA VCO_RCAP VCC_MIX ENABLE VCC_IF CLK ANA_IFVGA ANA_RFVGA G12 VCC_DIV VCC_DIV VSS_LPF_BIAS_PLL VCC_PAp VCC_PAn VCC_DRV VCC_DRV VSS_VCO VSS_VCO VCC_VCO VSS_VCO VCC_VCO C21 1nF TX_VCC_TRIP B4 C23 1nF TX_VCC_RFVGA GND GND GND VDD_SYN GND VDDD GND TX_VCC_DIV A12 B11 C14 1nF C22 1nF PS_4V_1 B1 C16 1nF G1 A3 TX_VCC_DRV H1 C31 1nF G10 G11 VSS_VCO B5 PS_4V_2 C17 1nF TX_VCC_VCO C32 1nF B6 B7 B8 C1 F1 C12 1nF Figure 20. Evaluation Daughter Board PCB Schematic Rev. B | Page 23 of 25 C29 100nF B3 VCC_DIV B12 VSS_DIV VDD_PA TX_VCC_IF C28 100pF 100nF VCC_RFVGA G3 REF_CLKN VSS_REF_DIG F11 VCC_TRIP G7 REF_CLKP VSS_CP_PFD TX_VCC_MIX C20 1nF C27 SCANOUT GND G2 RFB DEPOP EXTLO_N H11 VSS_VCO H12 VSS_VCO TX_VCC_PA DET_OUT A1 14423-020 F1 TX_OUT J1 Data Sheet C48 R70 J18 J20 FMP Q FMM I FMM Q TX MODULE C87 J28 + J32 C68 R86 R82 J33 TX IFVGA 60 DECT OUT R184 R183 R182 R181 R180 R179 R178 R177 R176 R175 R174 59 USB-LED U17 C69 R89 R87 R94 R85 C93 C58 R59 C63 R97 R98 R57 R58 R99 U18 C94 U15 R95 R90 C66 C70 R71 R66 + C49 R88 R56 + C88 C67 R93 R91 R92 R73 + TX RFVGA C95 U16 C89 J27 C65 1 2 R96 FB6 C52 2 J26 1 R72 C64 C47 R61 2 C43 J19 C11 FMP I C10 C9 C8 C6 C7 J17 BB IP 1 J1 D4 J13 BB IM C50 C42 R60 U3 R63 R65 R64 R62 USB BB QP R119 C46 C44 R68 C51 Y1 C45 U11 R67 R69 J14 BB QM C5 J16 J15 C12 HMC6300 REF OUT J34 PWR-SUPPLY-LED R192 60 59 2 1 + + C91 + R161 C81 R162 C82 MUX SEL0 J11 Figure 21. Evaluation PCB Motherboard Rev. B | Page 24 of 25 J12 VOUT IP VOUT IM C1 VOUT QP C2 VOUT QM C3 R156 R163 C83 C4 R159 R158 R155 R152 MUX SEL1 C85 R157 C21 R24 J21 J29 J30 J10 J9 14423-021 EXT CLOCK C25 C24 D8 R129 R14 R13 R23 R22 R21 U22 R153 R154 FB1 R160 C80 C79 D7 R128 C13 FB4 U19 C26 Y3 R130 R20 R19 C14 FB2 R18 R16 R15 R17 Y4 C92 J31 R173 R172 R171 R170 R169 R168 R167 R166 R165 R164 C84 C90 R187 R186 RX LNA CTL RX IFVGA R131 RX MODULE 600-01205-00-2 C86 C109 C108 C105 60 GHz EVALUATION BOARD C100 C99 C107 U26 R77 R195 C103 5V SUPPLY R103 R185 U27 C110 R123 C102 U25 R194 R189 R188 + C104 J8 R193 C101 U24 R79 R190 C106 C56 C96 C97 R191 U23 C28 D1 R32 C98 Data Sheet HMC6300 OUTLINE DIMENSIONS 6.050 6.000 5.950 12 11 10 9 7 8 6 5 4 3 2 1 A B BALL A1 IDENTIFIER 1.258 4.050 4.000 3.950 1.03 C 0.858 0.406 0.425 3.50 REF 0.455 0.075 D E 1.115 0.50 BSC F G H TOP VIEW 0.25 BSC (BALL SIDE DOWN) SIDE VIEW SEATING PLANE 0.220 0.190 0.160 0.310 0.270 0.230 PKG-005029 0.595 0.565 0.535 COPLANARITY 0.10 01-25-2016-A 0.815 0.755 0.695 BOTTOM VIEW 0.50 BSC(BALL SIDE UP) GROUND AREA 0.25 BSC 5.50 REF 5.75 REF Figure 22. 65-Ball Wafer Level Ball Grid Array [WLBGA] (BF-65-1) Dimensions shown in millimeters ORDERING GUIDE Model HMC6300BG46 Temperature Range −40°C to +85°C MSL Rating1 MSL1 EV1HMC6300BG46 EK1HMC6350 Package Description 65-Ball Wafer Level Ball Grid Array [WLBGA] Package Option BF-65-1 Branding2 BBFZ #YYWW XXXXXXXX-XX Evaluation Board, PCB Only 60 GHz SMT Transceiver Evaluation Kit Maximum peak reflow temperature of 260°C. The peak reflow temperature must not exceed the maximum temperature for which the package is qualified according to the moisture sensitivity level (MSL1). 2 BBFZ = RoHS Compliant Part, #YYWW indicates the year and week number, and the assembly lot number is indicated by XXXXXXXX-XX. 1 ©2016 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D14423-0-12/16(B) Rev. B | Page 25 of 25