DMN62D0UDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Product Summary Features BVDSS RDS(ON) max ID max TA = +25°C 60V 2Ω @ VGS = 4.5V 2.5Ω @ VGS = 2.5V 350mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Applications Motor Control Power Management Functions Case: SOT363 Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 Terminal Connections: See Diagram Weight: 0.006 grams (Approximate) SOT363 D1 D2 D2 G1 S1 S2 S2 G2 D1 G2 G1 ESD Protected Gate Gate Protection Diode Top View Gate Protection Diode S1 Q2 N-Channel Q1 N-Channel Top View Pin out Equivalent Circuit Ordering Information (Note 4) Part Number DMN62D0UDW-7 DMN62D0UDW-13 Notes: Case SOT363 SOT363 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information LEE = Product Type Marking Code YM = Date Code Marking Y or Y = Year (ex: D = 2016) M = Month (ex: 9 = September) Date Code Key Year 2016 Code D Month Code Jan 1 2017 E Feb 2 DMN62D0UDW Document number: DS38029 Rev. 2 - 2 2018 F Mar 3 2019 G Apr 4 2020 H May 5 2021 I Jun 6 1 of 7 www.diodes.com 2022 J 2023 K 2024 L 2025 M 2026 N 2027 O Jul 7 Aug 8 Sep 9 Oct O Nov N Dec D August 2016 © Diodes Incorporated DMN62D0UDW Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT Drain-Source Voltage Gate-Source Voltage Steady State Maximum Continuous Body Diode Forward Current (Note 6) Continuous Drain Current (Note 6) VGS = 4.5V TA = +25°C TA = +70°C ID IS Value 60 ±20 350 290 0.4 Unit V V Value 320 400 410 312 -55 to +150 Unit mW °C/W mW °C/W °C mA A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Electrical Characteristics Steady State Steady State Symbol PD RθJA PD RθJA TJ, TSTG (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 — — — — — — 1.0 ±10 V µA µA VGS = 0V, ID = 250µA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) 0.5 — 1.0 V Static Drain-Source On-Resistance RDS(ON) — 1.2 1.4 1.8 2.0 2.5 3.0 Ω |Yfs| VSD — — 1.8 0.8 — 1.3 S V VDS = 10V, ID = 250µA VGS = 4.5V, ID = 0.1A VGS = 2.5V, ID = 0.05A VGS = 1.8V, ID = 0.05A VDS =10V, ID = 0.2A VGS = 0V, IS = 115mA Ciss Coss Crss Rg Qg Qgs Qgd — — — — — — — — — — — 32 3.9 2.4 101 0.5 0.09 0.09 2.4 2.5 22.6 12.5 — — — — — — — — — — — pF pF pF Ω nC nC nC ns ns ns ns Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: tD(ON) tR tD(OFF) tF Test Condition VDS = 30V, VGS = 0V f = 1.0MHz f = 1MHz , VGS = 0V, VDS = 0V VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 30V, VGS = 10V, RG = 25Ω, ID = 200mA 5. Device mounted on FR-4 PCB, with minimum recommended pad layout 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN62D0UDW Document number: DS38029 Rev. 2 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMN62D0UDW 1.0 0.8 VDS=5V VGS=4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=3.0V 0.8 VGS=2.0V 0.6 VGS=1.8V 0.4 0.2 0.6 0.4 TA=125℃ 0.2 VGS=1.5V TA=85℃ TA=25℃ TA=150℃ VGS=1.3V TA=-55℃ 0.0 0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) 5 0.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 3 2.5 2 VGS=2.5V 1.5 VGS=4.5V 1 0.5 0 0 0.2 0.4 0.6 0.8 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic Figure 1. Typical Output Characteristic 3 2.5 2 1.5 ID=100mA 1 0 1 5 10 15 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage 4.5 20 2.2 TA=150℃ VGS= 4.5V 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT VGS=2.5V TA=125℃ 3.5 TA=85℃ 3 2.5 2 TA=25℃ 1.5 TA=-55℃ 1 0.5 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs. Drain Current and Temperature DMN62D0UDW Document number: DS38029 Rev. 2 - 2 3 of 7 www.diodes.com 2 1.8 VGS=4.5V, ID=100mA 1.6 1.4 1.2 VGS=2.5V, ID=50mA 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Junction Temperature August 2016 © Diodes Incorporated VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.2 3.5 3 2.5 VGS=2.5V, ID=50mA 2 1.5 VGS=4.5V, ID=100mA 1 0.5 0 1.1 1 ID=1mA 0.9 0.8 ID=250μA 0.7 0.6 0.5 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Junction Temperature -50 1 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Junction Temperature 100 CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) f=1MHz 0.8 VGS=0V, TA=85℃ VGS=0V, TA=125℃ 0.6 VGS=0V, TA=150℃ 0.4 VGS=0V, TA=25℃ 0.2 VGS=0V, TA=-55℃ Ciss 10 Coss Crss 1 0 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 0 1.5 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 40 10 4.5 RDS(ON) Limited 4 ID, DRAIN CURRENT (A) 3.5 3 VGS (V) NEW PRODUCT DMN62D0UDW 2.5 VDS=10V, ID=250mA 2 1.5 1 PW =100μs PW =1ms 1 0.1 PW =10ms PW =100ms 0.01 0.5 TJ(MAX)=150℃ PW =1s TC=25℃ PW =10s Single Pulse DUT on 1*MRP board DC VGS=4.5V 0.001 0 0 0.1 0.3 Qg (nC) Figure 11. Gate Charge DMN62D0UDW Document number: DS38029 Rev. 2 - 2 0.2 0.4 0.5 4 of 7 www.diodes.com 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 August 2016 © Diodes Incorporated DMN62D0UDW r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 1 D=0.5 D=0.9 D=0.3 0.1 D=0.7 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA (t)=r(t) * RθJA RθJA=405℃/W Duty Cycle, D=t1 / t2 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMN62D0UDW Document number: DS38029 Rev. 2 - 2 5 of 7 www.diodes.com August 2016 © Diodes Incorporated DMN62D0UDW Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. NEW PRODUCT SOT363 E E1 F SOT363 Dim Min Max Typ A1 0.00 0.10 0.05 A2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 D 1.80 2.20 2.15 E 2.00 2.20 2.10 E1 1.15 1.35 1.30 e 0.650 BSC F 0.40 0.45 0.425 L 0.25 0.40 0.30 a 0° 8° -All Dimensions in mm b D A2 c L e A1 a Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT363 C Dimensions G Y1 Y C G X Y Y1 Value (in mm) 0.650 1.300 0.420 0.600 2.500 X DMN62D0UDW Document number: DS38029 Rev. 2 - 2 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMN62D0UDW IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2016, Diodes Incorporated www.diodes.com DMN62D0UDW Document number: DS38029 Rev. 2 - 2 7 of 7 www.diodes.com August 2016 © Diodes Incorporated