DMP1046UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCED INFORMATION Product Summary Features Device V(BR)DSS RDS(ON) max ID MAX TA = +25°C P-Channel -12V 61mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1.8V -3.8A -3.3A -2.8A Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) • • • • • Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(on)) • • and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. • • Applications • • • Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Terminals Connections: See Diagram Below Weight: 0.0065 grams (Approximate) Load Switch Power Management Functions Portable Power Adaptors • • U-DFN2020-6 D2 D1 S2 G2 D2 D1 G2 G1 D1 D2 G1 S2 S1 S1 Pin1 Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMP1046UFDB -7 DMP1046UFDB -13 Notes: Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information U-DFN2020-6 P6 Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb 2 DMP1046UFDB Document number: DS37712 Rev. 2 - 2 Mar 3 P6 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: C = 2015) M = Month (ex: 9 = September) M Y 2017 E Apr 4 May 5 2018 F Jun 6 1 of 6 www.diodes.com 2019 G Jul 7 Aug 8 2020 H Sep 9 Oct O 2021 I Nov N Dec D February 2015 © Diodes Incorporated DMP1046UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCED INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State t < 5s ID Value -12 ±8 -3.8 -3.0 ID -5.0 -4.0 IS IDM IAS EAS -15 -12 8 TA = +25°C TA = +70°C TA = +25°C TA = +70°C Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Avalanche Current (L = 0.1mH) Avalanche Energy (L = 0.1mH) Units V V A A A A A mJ -1 Thermal Characteristics Characteristic Symbol Steady State t < 5s Steady State t < 5s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Notes: Value 1.4 2.2 92 55 20 -55 to 150 PD RθJA RθJC TJ, TSTG Units W °C/W °C 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -12 - - -1.0 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -12V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) RDS (ON) 37 47 63 -0.65 -1 61 81 115 -1.2 V Static Drain-Source On-Resistance -0.4 - VDS = VGS, ID = -250µA VGS = -4.5V, ID = -3.6A VGS = -2.5V, ID = -3.2A VGS = -1.8V, ID = -1.0A VGS = 0V, IS = -4.5A - 915 225 183 56.9 10.7 17.9 1.7 3.0 5.7 11.5 27.8 26.4 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: VSD Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - - mΩ V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -6V, ID = -4.3A VDD = -6V, VGS = -4.5V, RL = 1.6Ω, RG = 1Ω 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMP1046UFDB Document number: DS37712 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP1046UFDB 10 20 VGS = 2.0V VGS = 1.8V VGS = 2.5V 7 VGS = 3.0V 6 VGS = 4.5V VGS = 8.0V 5 VGS = 1.5V 4 3 14 12 10 8 TA = 150°C 6 T A = 85°C 2 3 4 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0.1 VGS = -1.8V 0.08 0.07 0.06 VGS = -2.5V 0.05 0.04 VGS = -4.5V 0.03 0.05 0.045 3 5 7 9 11 13 15 17 19 I D, DRAIN SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 21 0.035 0.03 3 0.45 0.4 I D = -3.6A 0.35 0.3 0.25 0.2 0.15 I D = -3.2A 0.1 0.05 I D = -1A 0 1 2 3 4 5 6 7 -VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 8 1.4 VGS = -4.5V T A = 150°C TA = 125°C 0.04 0.5 1 1.5 2 2.5 V GS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 0.5 R DS(ON), DRAI N-SO URCE ON-RESIS TANCE (NORMALI ZE D) 1 TA = -55°C 0 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) 1 0.09 TA = 25°C 2 VGS = 1.2V 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) TA = 125°C 4 1 0.02 VDS = -5.0V 16 8 I D, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 18 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( Ω) ADVANCED INFORMATION 9 TA = 85°C T A = 25°C T A = -55°C 0.025 1.3 1.2 1.1 VGS = -4.5V 1 ID = -5A 0.9 VGS = -2.5V 0.8 I D = -3.0A 0.7 0.02 1 3 5 7 9 11 13 15 17 ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMP1046UFDB Document number: DS37712 Rev. 2 - 2 19 21 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com February 2015 © Diodes Incorporated 1 VGS(TH ), GATE THRESHOLD VOLTA GE (V ) R DS(on ), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.07 0.06 VGS = -2.5V I D = -3A 0.05 0.04 VGS = -4.5V I D = -5A 0.03 0.02 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 7 On-Resistance Variation with Temperature 20 0.9 0.7 0.6 0.5 0.4 0.3 0.2 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 C T , JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) -I D = 250µA f = 1MHz T A= 150°C 16 14 TA = 125°C 12 10 8 TA = 85°C 6 4 T A= 25°C 2 0 0 -ID = 1mA 0.8 18 Ciss 1000 C oss Crss 100 T A= -55°C 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 0 1.5 2 4 6 8 10 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 12 100 8 RDS(on) Limited 6 VDS = -6V ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCED INFORMATION DMP1046UFDB ID = -4.3A 4 2 0 0 5 15 10 Q g, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMP1046UFDB Document number: DS37712 Rev. 2 - 2 10 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 TJ(m ax) = 150°C TA = 25°C VGS = 4.5V Single Pulse 0.01 DUT on 1 * MRP Board 20 4 of 6 www.diodes.com 0.01 PW = 10ms PW = 1ms PW = 100µs 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMP1046UFDB 1D= r(t), TRANSIENT THERMAL RESISTANCE ADVANCED INFORMATION 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja (t) = r(t) * Rthja Rthja = 171°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance 10 100 1000 Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 G X2 G1 X1 G Y1 Z DMP1046UFDB Document number: DS37712 Rev. 2 - 2 5 of 6 www.diodes.com February 2015 © Diodes Incorporated DMP1046UFDB IMPORTANT NOTICE ADVANCED INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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