AUIRLZ24NS
AUIRLZ24NL
AUTOMOTIVE GRADE
HEXFET® Power MOSFET
Features
l
l
l
l
l
l
l
Advanced Process Technology
Logic Level Gate Drive
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
D
VDSS
55V
RDS(on) max.
G
S
18A
ID
D
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche
rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
Base Part Number
Package Type
AUIRLZ24NS
D2-Pak
AUIRLZ24NL
TO-262
0.06Ω
G S
G
TO-262
AUIRLZ24NL
D2Pak
AUILZ24NS
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Tube
50
S
D
Orderable Part Number
AUIRLZ24NS
AUIRLZ24NSTRL
AUIRLZ24NL
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is
not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal
resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is
25°C, unless otherwise specified.
Parameter
Max.
Units
g
g
18
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V
IDM
Pulsed Drain Current
PD @TA = 25°C
Maximum Power Dissipation
3.8
PD @TC = 25°C
Maximum Power Dissipation
45
W
0.30
W/°C
cg
13
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
c
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
eg
dv/dt
Peak Diode Recovery
TJ
Operating Junction and
TSTG
Storage Temperature Range
A
72
dg
c
W
± 16
V
68
mJ
11
A
4.5
mJ
5.0
V/ns
-55 to + 175
°C
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Thermal Resistance
Typ.
Max.
RθJC
Junction-to-Case
Parameter
–––
3.3
RθJA
Junction-to-Ambient (PCB Mounted, steady-state)**
–––
40
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
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Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
1.0
8.3
LS
Internal Source Inductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V (BR)DSS
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
IGSS
Typ.
0.061
7.1
74
20
29
Max. Units
Conditions
V
V GS = 0V, ID = 250µA
V/°C Reference to 25°C, ID = 1mA
0.060
V GS = 10V, ID = 11A
0.075
Ω
V GS = 5.0V, ID = 11A
0.105
V GS = 4.0V, ID = 9.0A
2.0
V
V DS = V GS, ID = 250µA
S
V DS = 25V, I D = 11A
25
V DS = 55V, V GS = 0V
µA
250
V DS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 16V
nA
-100
V GS = -16V
15
I D = 11A
3.7
nC V DS = 44V
8.5
V GS = 5.0V, See Fig. 6 and 13
V DD = 28V
I D = 11A
ns
R G = 12Ω, VGS = 5.0V
R D = 2.4Ω, See Fig. 10
Between lead,
7.5
nH
and center of die contact
480
V GS = 0V
130
pF
V DS = 25V
61
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
IS
I SM
V SD
trr
Q rr
ton
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
18
showing the
A
G
integral reverse
72
S
p-n junction diode.
1.3
V
TJ = 25°C, IS = 11A, VGS = 0V
60
90
ns
TJ = 25°C, IF = 11A
130 200
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes
Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 790µH, RG = 25Ω, IAS = 11A. (See Figure 12)
ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRLZ24N data and test conditions.
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
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100
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
10
1
2.5V
20μs PULSE WIDTH
T J = 25°C
0.1
0.1
1
10
A
10
2.5V
1
3.0
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25°C
TJ = 175°C
10
1
V DS = 15V
20μs PULSE WIDTH
4
5
6
7
8
9
10
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
3
10
A
100
Fig 2. Typical Output Characteristics
100
3
1
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
0.1
20μs PULSE WIDTH
T J = 175°C
0.1
0.1
100
VDS , Drain-to-Source Voltage (V)
2
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , Drain-to-Source Current (A)
ID , Drain-to-Source Current (A)
TOP
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A
I D = 18A
2.5
2.0
1.5
1.0
0.5
VGS = 10V
0.0
-60 -40 -20
0
20
40
60
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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A
80 100 120 140 160 180
February 23, 2015
AUIRLZ24NS/AUIRLZ24NL
Ciss
600
400
15
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
800
Coss
200
Crss
0
1
10
100
A
I D = 11A
V DS = 44V
V DS = 28V
12
9
6
3
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
VDS , Drain-to-Source Voltage (V)
8
12
16
20
A
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
OPERATION IN THIS AREA LIMITED
BY R DS(on)
I D , Drain Current (A)
ISD , Reverse Drain Current (A)
4
TJ = 175°C
TJ = 25°C
10
VGS = 0V
1
0.4
0.8
1.2
1.6
VSD , Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
4
A
2.0
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100
10μs
100μs
10
TC = 25°C
TJ = 175°C
Single Pulse
1
1
1ms
10ms
10
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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A
100
February 23, 2015
AUIRLZ24NS/AUIRLZ24NL
RD
20
V DS
VGS
ID, Drain Current (Amps)
16
D.U.T.
RG
12
+
V
- DD
5.0V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
4
VDS
90%
A
0
25
50
75
100
125
150
175
TC , Case Temperature (°C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
D = 0.50
1
0.20
0.10
0.05
0.1
PDM
0.02
0.01
t
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
0.01
0.00001
1
/t
1
t2
2
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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A
1
L
VDS
D.U.T.
RG
+
V
- DD
IAS
5.0 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
VDD
E AS , Single Pulse Avalanche Energy (mJ)
AUIRLZ24NS/AUIRLZ24NL
140
TOP
120
BOTTOM
ID
4.5A
7.8A
11A
100
80
60
40
20
0
VDD = 25V
25
50
A
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
VDS
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2μF
.3μF
10 V
QGS
QGD
D.U.T.
+
V
- DS
VGS
VG
3mA
IG
Charge
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
6
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Fig 13b. Gate Charge Test Circuit
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Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple ≤ 5%
* VGS
= 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
Part Number
AUIRLZ24NS
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLZ24NS/AUIRLZ24NL
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
Part Number
AUIRLZ24NL
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLZ24NS/AUIRLZ24NL
D2Pak Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
1.65 (.065)
0.368 (.0145)
0.342 (.0135)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLZ24NS/AUIRLZ24NL
†
Qualification Information
Automotive
(per AEC-Q101)
Qualification Level
Moisture Sensitivity Level
Comments: This part number(s) passed Automotive qualification. IR’s
Industrial and Consumer qualification level is granted by extension of the
higher Automotive level.
3L-D2 PAK
3L-TO-262
MSL1
††
Machine Model
Class M2(+/- 150V )
(per AEC-Q101-002)
Human Body Model
Class H1A(+/- 500V )
(per AEC-Q101-001)
Charged Device Model
Class C5(+/- 2000V )
(per AEC-Q101-005)
††
ESD
††
RoHS Compliant
Yes
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Highest passing voltage
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AUIRLZ24NS/AUIRLZ24NL
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries
(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its
products and services at any time and to discontinue any product or services without notice. Part numbers
designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to
product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions
of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance
with IR’s standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary
to support this warranty. Except where mandated by government requirements, testing of all parameters of each
product is not necessarily performed.
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the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer
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IR products are neither designed nor intended for use in automotive applications or environments unless the specific
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For technical support, please contact IR’s Technical Assistance Center
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WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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