Single N-channel Trench MOSFET 60V, 120A, 3.3mΩ General Description Features The MDP06N033 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDP06N033 is suitable device for Synchronous Rectification for Server / Adapter and general purpose applications. VDS = 60V ID = 120A @VGS = 10V RDS(ON) < 3.3 mΩ @VGS = 10V 100% UIL Tested 100% Rg Tested D G S TO-220 Absolute Maximum Ratings (Ta = 25oC) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 60 V VGSS ±20 V o TC=25 C (Silicon Limited) Continuous Drain Current (1) o TC=25 C (Package Limited) 159.8 ID TC=100 C 101.1 Pulsed Drain Current IDM TC=25oC Power Dissipation 120.0 A o 480 138.9 PD o TC=100 C W 55.6 Single Pulse Avalanche Energy Junction and Storage Temperature Range EAS 288 TJ, Tstg -55~150 Symbol Rating RθJA 62.5 RθJC 0.9 mJ o C Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case Jun. 2015. Rev. 1.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDP06N033– Single N-Channel Trench MOSFET 60V MDP06N033 Part Number Temp. Range MDP06N033TH o -55~150 C Package Packing RoHS Status TO-220 Tube Halogen Free Electrical Characteristics (TJ =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 60 - - Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 2.0 - 4.0 V Drain Cut-Off Current IDSS VDS = 48V, VGS = 0V - - 1.0 Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - ±0.1 RDS(ON) VGS = 10V, ID = 50A - 2.7 3.3 mΩ gfs VDS = 10V, ID = 50A - 100 - S - 83.5 - - 25.6 - - 22.9 - - 5,236.0 - - 77.6 - Drain-Source ON Resistance Forward Transconductance μA Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss VDS = 30V, ID = 50A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.0MHz Reverse Transfer Capacitance Crss Output Capacitance Coss - 1,033.0 - Turn-On Delay Time td(on) - 39.0 - - 26.3 - - 89.0 - - 50.5 - Rise Time Turn-Off Delay Time Fall Time tr td(off) VGS = 10V, VDS = 30V, ID = 50A , RG = 3.0Ω tf nC pF ns Rg f=1 MHz - 3.0 - Ω Source-Drain Diode Forward Voltage VSD IS = 50A, VGS = 0V - 0.80 1.2 V Body Diode Reverse Recovery Time trr - 66.0 - ns - 97.7 - nC Gate Resistance Drain-Source Body Diode Characteristics IF = 50A, dl/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited 2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 24.0A, VGS = 10V. Jun. 2015. Rev. 1.0 2 MagnaChip Semiconductor Ltd. MDP06N033– Single N-Channel Trench MOSFET 60V Ordering Information Drain-Source On-Resistance [mΩ] 3.0 180 ID, Drain Current [A] 160 7.0V 140 8.0V 120 VGS = 10V 6.0V 100 80 60 40 20 2.9 2.8 VGS = 10V 2.7 2.6 5.0V 0 0 1 2 3 4 2.5 5 0 10 20 VDS, Drain-Source Voltage [V] 40 50 60 70 80 90 100 ID, Drain Current [A] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.8 20 ※ Notes : ※ Notes : 18 1. VGS = 10 V 2. ID = 50.0 A 1.6 RDS(ON) [mΩ ], Drain-Source On-Resistance RDS(ON), (Normalized) Drain-Source On-Resistance 30 1.4 1.2 1.0 ID = 50.0A 16 14 12 10 8 6 TJ = 25℃ 4 0.8 2 0.6 -50 0 -25 0 25 50 75 100 125 5 150 6 7 8 9 10 VGS, Gate to Source Volatge [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 45 ※ Notes : ※ Notes : VDS = 10V 100 IDR, Reverse Drain Current [A] 40 ID, Drain Current [A] 35 30 25 TJ=25℃ 20 15 10 VGS = 0V TJ=25℃ 10 1 5 0 0 1 2 3 4 5 0.0 6 0.6 0.9 1.2 1.5 VSD, Source-Drain voltage [V] VGS, Gate-Source Voltage [V] Fig.5 Transfer Characteristics Jun. 2015. Rev. 1.0 0.3 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDP06N033– Single N-Channel Trench MOSFET 60V 200 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Note : ID = 50A VDS = 30V 6000 Ciss VGS, Gate-Source Voltage [V] 8 Capacitance [pF] 5000 6 4 2 4000 3000 Coss ※ Notes ; 2000 1. VGS = 0 V 2. f = 1 MHz Crss 1000 0 0 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 0 85 5 10 15 20 25 30 35 40 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics 200 10 180 3 160 10 ID, Drain Current [A] ID, Drain Current [A] 100 us 2 1 ms 10 Operation in This Area is Limited by R DS(on) 1 10 ms 100 ms 1s DC 10 120 100 80 60 0 40 Single Pulse TJ=Max rated TC=25℃ 10 140 20 -1 10 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Fig.10 Maximum Drain Current vs. Case Temperature Fig.9 Maximum Safe Operating Area 0 10 Zθ JA(t), Thermal Response D=0.5 0.2 -1 10 0.1 0.05 0.02 -2 10 0.01 ※ Notes : Duty Factor, D=t 1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC single pulse -3 10 -4 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Jun. 2015. Rev. 1.0 4 MagnaChip Semiconductor Ltd. MDP06N033– Single N-Channel Trench MOSFET 60V 7000 10 MDP06N033– Single N-Channel Trench MOSFET 60V Package Dimension 3 Leads, TO-220 Dimensions are in millimeters unless otherwise specified Jun. 2015. Rev. 1.0 5 MagnaChip Semiconductor Ltd. MDP06N033– Single N-Channel Trench MOSFET 60V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun. 2015. Rev. 1.0 6 MagnaChip Semiconductor Ltd.