C122F1, C122B1 Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half−wave silicon gate−controlled, solid−state devices are needed. http://onsemi.com Features SCRs 8 AMPERES RMS 50 thru 200 VOLTS • Glass Passivated Junctions and Center Gate Fire for Greater • • • Parameter Uniformity and Stability Small, Rugged, Thermowatt Construction for Low Thermal Resistance, High Heat Dissipation and Durability Blocking Voltage to 200 Volts Pb−Free Packages are Available* G A K MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Peak Repetitive Off−State Voltage (Note 1) (TJ = 25 to 100°C, Sine Wave, 50 to 60 Hz; Gate Open) C122F1 C122B1 VDRM, VRRM On-State RMS Current (180° Conduction Angles; TC = 75°C) IT(RMS) 8.0 A ITSM 90 A I2t 34 A2s PGM 5.0 W PG(AV) 0.5 W Forward Peak Gate Current (Pulse Width = 10 ms, TC = 70°C) IGM 2.0 A Operating Junction Temperature Range TJ −40 to +125 °C 1 Cathode Storage Temperature Range Tstg −40 to +150 °C 2 Anode Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, TC = 75°C) Circuit Fusing Considerations (t = 8.3 ms) Forward Peak Gate Power (Pulse Width = 10 ms, TC = 70°C) Forward Average Gate Power (t = 8.3 ms, TC = 70°C) Value MARKING DIAGRAM Rating Unit V 4 50 200 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. August, 2005 − Rev. 3 2 3 A Y W C122F1 G AKA = Assembly Location = Year = Work Week = Device Code = Pb−Free Package = Diode Polarity PIN ASSIGNMENT Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. © Semiconductor Components Industries, LLC, 2005 1 A YW C122F1G AKA TO−220AB CASE 221A STYLE 3 1 3 Gate 4 Anode ORDERING INFORMATION Device Package Shipping C122F1 TO220AB 500 Units / Box C122F1G TO220AB (Pb−Free) 500 Units / Box C122B1 TO220AB 500 Units / Box C122B1G TO220AB (Pb−Free) 500 Units / Box Publication Order Number: C122F1/D C122F1, C122B1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction−to−Case Characteristic RqJC 1.8 °C/W Thermal Resistance, Junction−to−Ambient RqJA 62.5 °C/W TL 260 °C Min Typ Max Unit − − − − 10 0.5 mA mA − − 1.83 V − − − − 25 40 − − − − 1.5 2.0 0.2 − − − − − − 30 60 Maximum Lead Temperature for Soldering Purposes 1/8 in. from Case for 10 Seconds ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Peak Repetitive Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) IDRM, IRRM TC = 25°C TC = 125°C ON CHARACTERISTICS Peak On−State Voltage (Note 2) (ITM = 16 A Peak, TC = 25°C) Gate Trigger Current (Continuous dc) (VAK = 12 V, RL = 100 W) Gate Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 W) VTM IGT TC = 25°C TC = −40°C mA VGT TC = 25°C TC = −40°C Gate Non−Trigger Voltage (Continuous dc) (VAK = 12 V, RL = 100 W, TC = 125°C) VGD V V Holding Current (VAK = 12 Vdc, Initiating Current = 200 mA, Gate Open) TC = 25°C TC = −40°C IH mA Turn-Off Time (VD = Rated VDRM) (ITM = 8 A, IR = 8 A) tq − 50 − ms dv/dt − 50 − V/ms DYNAMIC CHARACTERISTICS Critical Rate−of−Rise of Off−State Voltage (VAK = Rated VDRM, Exponential Waveform, Gate Open, TC = 100°C) 2. Pulse Test: Pulse Width ≤ 1 ms, Duty Cycle ≤ 2%. http://onsemi.com 2 C122F1, C122B1 Voltage Current Characteristic of SCR + Current Anode + VTM Symbol Parameter VDRM Peak Repetitive Off State Forward Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Off State Reverse Voltage IRRM Peak Reverse Blocking Current VTM Peak On State Voltage IH Holding Current on state IH IRRM at VRRM Reverse Blocking Region (off state) Reverse Avalanche Region + Voltage IDRM at VDRM Forward Blocking Region (off state) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE °( C) TC , MAXIMUM ALLOWABLE CASE TEMPERATURE °( C) Anode − 100 100 90 80 DC CONDUCTION ANGLE = 30° 70 60° 90° 120° 180° 0 360 CONDUCTION ANGLE 60 0 1 2 3 4 5 6 7 8 IT(AV), AVERAGE ON−STATE FORWARD CURRENT (AMPERES) CONDUCTION CONDUCTION ANGLE ANGLE 95 0 90 85 80 CONDUCTION ANGLE = 60° 75 70 0 240° 14 1 2 3 4 5 10 RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz 12 DC 10 180° 8 CONDUCTION ANGLE 30° 6 60° 90° 120° 4 2 0 1 2 3 4 5 6 7 360° 6 7 8 Figure 2. Current Derating (Full−Wave) TC , AVERAGE ON−STATE POWER DISSIPATION (WATTS) P(AV), AVERAGE ON−STATE POWER DISSIPATION (WATTS) 180° IT(AV), AVERAGE ON−STATE CURRENT (AMPERES) Figure 1. Current Derating (Half−Wave) 0 120° RESISTIVE OR INDUCTIVE LOAD. 50 TO 400 Hz 65 60 360 ONE CYCLE OF SUPPLY FREQUENCY 8 360° 240° 180° 8 120° CONDUCTION ANGLE = 60° 6 CONDUCTION CONDUCTION ANGLE ANGLE 4 0 360 2 0 ONE CYCLE OF SUPPLY FREQUENCY RESISTIVE OR INDUCTIVE LOAD, 50 TO 400 Hz 0 1 2 3 4 5 6 7 IT(AV), AVERAGE ON−STATE CURRENT (AMPERES) IT(AV), AVERAGE ON−STATE CURRENT (AMPERES) Figure 3. Maximum Power Dissipation (Half−Wave) Figure 4. Maximum Power Dissipation (Full−Wave) http://onsemi.com 3 8 C122F1, C122B1 PACKAGE DIMENSIONS TO−220AB CASE 221A−07 ISSUE AA −T− B F T SEATING PLANE C S 4 Q A 1 2 3 U H K Z R L V J G D N NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 −−− −−− 0.080 STYLE 3: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 −−− −−− 2.04 CATHODE ANODE GATE ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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