MOSFET SMD Type N-Channel MOSFET AO4408-HF (KO4408-HF) SOP-8 ■ Features ● VDS (V) = 30V ● ID = 12 A (VGS = 10V) ● RDS(ON) ＜ 13mΩ (VGS = 10V) 1.50 0.15 ● RDS(ON) ＜ 16mΩ (VGS = 4.5V) 0.21 -0.02 +0.04 ● Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 1 2 3 4 Source Source Source Gate 5 6 7 8 Drain Drain Drain Drain D G S ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±12 Continuous Drain Current TA=25℃ TA=70℃ Pulsed Drain Current IDM Avalanche Current Repetitive Avalanche Energy Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Lead Junction Temperature Storage Temperature Range ID L=0.3mH TA=25℃ TA=70℃ t ≤ 10s Steady-State 10 80 IAV 30 135 RthJA V 12 EAV PD Unit 3.1 2 A mJ W 40 65 RthJL 16 TJ 150 Tstg -55 to 150 ℃/W ℃ www.kexin.com.cn 1 MOSFET SMD Type N-Channel MOSFET AO4408-HF (KO4408-HF) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Symbol VDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS Gate Threshold Voltage VGS(th) Test Conditions ID=250 uA, VGS=0V Min Typ 30 1 VDS=30V, VGS=0V, TJ=55℃ 5 VDS=0V, VGS=±12V VDS=VGS , ID=250uA RDS(On) VGS=10V, ID=12A 1 Forward Transconductance ID(ON) gFS Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Gate Resistance Rg Total Gate Charge Qg Gate Source Charge Qgs nA 2.5 V 21 TJ=125℃ VGS=4.5V, VDS=5V VDS=5V, ID=10A A 30 1020 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=4.5V, VDS=15V, ID=12A S 1200 pF 320 80 112 10.3 12.5 0.13 0.5 Qgd 3.9 3.9 5.5 Turn-On Rise Time tr 3 6 Turn-Off DelayTime td(off) 19.2 30 2.6 5 26 32 tf Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Maximum Body-Diode Continuous Current IS VSD IF= 12A, dI/dt= 100A/us 18 IS=1A,VGS=0V Note : The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. ■ Marking Marking 4408 KC**** F www.kexin.com.cn Ω nC 2.1 td(on) VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω mΩ 16.5 40 Turn-On DelayTime Diode Forward Voltage 2 ±100 Gate Drain Charge Turn-Off Fall Time uA 14 VGS=4.5V, ID=10A On State Drain Current Unit V VDS=30V, VGS=0V VGS=10V, ID=12A Static Drain-Source On-Resistance Max ns 32 nC 4.5 A 1 V MOSFET SMD Type N-Channel MOSFET AO4408-HF (KO4408-HF) ■ Typical Characterisitics 50 10V 40 VDS=5V 25 3.5V 3V 20 30 ID(A) ID (A) 30 4.5V 20 15 125°C 10 10 5 VGS=2.5V 0 0 1 2 3 4 25°C 0 5 0.5 VDS (Volts) Fig 1: On-Region Characteristics 1 1.5 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 16 1.8 VGS=10V 14 Normalized On-Resistance ID=10A RDS(ON) (mΩ ) 2 VGS=4.5V 12 10 VGS=10V 1.6 VGS=4.5V 1.4 1.2 1 8 0 5 10 15 20 0.8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 ID=10A VGS=0V 1.0E+00 125°C 30 125°C 20 IS (A) RDS(ON) (mΩ ) 1.0E-01 1.0E-02 25°C 10 25°C 1.0E-03 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 www.kexin.com.cn 3 MOSFET SMD Type N-Channel MOSFET AO4408-HF (KO4408-HF) ■ Typical Characterisitics 5 1500 VDS=15V ID=12A 1250 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 1000 750 Coss 500 250 0 0 2 4 6 8 10 0 12 0 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 1ms 10.0 100µs Power (W) ID (Amps) 0.1s 1s ZθJA Normalized Transient Thermal Resistance 1 10 . VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 30 20 D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=40°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4 30 TJ(Max)=150°C TA=25°C 0 0.001 DC 0.1 0.1 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 10 10s TJ(Max)=150°C TA=25°C 10 40 10ms 1.0 5 50 10µs RDS(ON) limited Crss www.kexin.com.cn 100 1000 MOSFET SMD Type N-Channel MOSFET AO4408-HF (KO4408-HF) ■ Typical Characterisitics 4 TA=25°C 60 Power Dissipation (W) ID(A), Peak Avalanche Current 70 50 40 30 tA 20 ． BVL ⋅−IV D DD 10 0 0.00001 0.0001 Time in avalanche, tA (s) Figure 12: Avalanche capability 0.001 3 2 10s 1 SteadyState 0 25 50 75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note A) www.kexin.com.cn 5