ETC2 GVD30601-001 Super hyperabrupt tuning varactor diode Datasheet

Sprague-Goodman
ENGINEERING BULLETIN
SG-950
VARACTOR DIODES
Sprague-Goodman Electronics, Inc.
1700 SHAMES DRIVE, WESTBURY, NY 11590
TEL: 516-334-8700 • FAX: 516-334-8771
E-MAIL: [email protected]
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Low voltage wireless phase locked loop VCOs
• Silicon dioxide passivated
• Phase shifters
• Superior mid range linear characteristics
SPECIFICATIONS
• High tuning ratios
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
• High Q
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• TCXOs, VCXOs
Operating junction temperature: –55°C to +125°C
• Low voltage wireless open loop VCOs
Storage temperature: –55°C to +125°C
Total
Capacitance
C T (pF) at –2 V
min
max
46
100
Total
Capacitance
C T (pF) at –7 V
typ
68
150
3
Total
Capacitance
C T (pF) at –10 V
min
max
6.1
13.0
TOP VIEW
4.2
8.6
3
5.2
10.6
Model Number
Q min
at –2 V
(10 MHz)
Single
Common
Cathode
75
50
GVD1401-001
GVD1404-001
—
—
500
0.031
TYP
0.80
0.035
TYP
0.90
1
2
(SINGLE)
1
2
(COMMON CATHODE)
0.115 ± 0.005
2.93 ± 0.13
0.079
2.0
100
0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.091 ± 0.008
2.3 ± 0.2
0.037
0.95
50
CT (pF)
0.037
0.95
PAD LAYOUT
0.021 ± 0.003
0.53 ± 0.08
0.016 ± 0.002
0.41 ± 0.04
TYP
0.075 ± 0.005
1.91 ± 0.13
0.007 ± 0.003
0.18 ± 0.08
GVD1404-001
GVD1401-001
0.040 ± 0.007
1.03 ± 0.18
10
0.0047 ± 0.0013
0.12 ± 0.033
TYP
5
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
2
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Low voltage wireless phase locked loop VCOs
• Silicon dioxide passivated
• Phase shifters
• Superior mid range linear characteristics
SPECIFICATIONS
• High tuning ratios
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
• High Q
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
• Available in common cathode Style
• Available in chip form (add suffix -000)
APPLICATIONS
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• TCXOs, VCXOs
Operating junction temperature: –55°C to +125°C
• Low voltage wireless open loop VCOs
Storage temperature: –55°C to +125°C
Total
Capacitance
C T (pF) at –1 V
min
max
Capacitance
Ratio
Capacitance
Ratio
C T at –1 V
C T at –3 V
min
max
C T at –1 V
C T at –6 V
min
max
3.00
5.85
10.35
15.50
45.00
1.4
1.6
1.6
1.6
1.6
3.60
7.15
12.65
18.50
54.00
3
TOP VIEW
1.9
2.0
2.0
2.0
2.0
3
2.6
2.8
2.9
3.0
3.0
3.3
3.4
3.4
3.5
3.5
0.031
TYP
0.80
1
2
(COMMON CATHODE)
0.115 ± 0.005
2.93 ± 0.13
0.079
2.0
0.051 ± 0.004
1.3 ± 0.1
0.037
0.95
0.075 ± 0.005
1.91 ± 0.13
Common
Cathode
1500
1200
1000
900
750
GVD20433-001
GVD20434-001
GVD20435-001
GVD20436-001
GVD20437-001
GVD20433-004
GVD20434-004
GVD20435-004
GVD20436-004
---
50.0
10.0
5.0
0.037
0.95
GVD20436-001
3.0
PAD LAYOUT
0.021 ± 0.003
0.53 ± 0.08
Single
CT (pF)
0.038 ± 0.003
0.96 ± 0.065
0.091 ± 0.008
2.3 ± 0.2
Q min
at –4 V
(50 MHz)
100.0
0.035
TYP
0.90
1
2
(SINGLE)
Model Number
GVD20435-001
2.0
GVD20434-001
0.040 ± 0.007
1.03 ± 0.18
1.0
0.5
0.016 ± 0.002
0.41 ± 0.04
TYP
0.3
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TYP
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
3
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Low voltage wireless phase locked loop VCOs
• Silicon dioxide passivated
• Phase shifters
• Superior mid range linear characteristics
SPECIFICATIONS
• High tuning ratios
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
• High Q
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• TCXOs, VCXOs
Operating junction temperature: –55°C to +125°C
• Low voltage wireless open loop VCOs
Storage temperature: –55°C to +125°C
Total
Capacitance
C T (pF) at –1 V
min
Total
Capacitance
C T (pF) at –2.5 V
min
max
13.0
13.0
17.0
17.0
26.0
26.0
36.0
36.0
6.5
6.5
8.5
8.5
13.0
13.0
18.0
18.0
Total
Capacitance
C T (pF) at –1 V
min
9.0
3
Q min
at –4 V
(50 MHz)
Single
Common
Cathode
2.7
2.7
3.2
3.2
4.7
4.7
6.2
6.2
750
350
600
300
500
225
400
150
GVD20442-001
GVD20443-001
GVD20444-001
GVD20445-001
GVD20446-001
GVD20447-001
GVD20448-001
GVD20449-001
GVD20442-004
GVD20443-004
GVD20444-004
GVD20445-004
---------
Total
Capacitance
C T (pF) at –4 V
max
Q min
at –4 V
(50 MHz)
Single
Common
Cathode
3.0
400
GVD20450-001
GVD20450-004
10.0
10.0
13.0
13.0
20.0
20.0
27.0
27.0
Total
Capacitance
C T (pF) at –2.5 V
min
max
4.5
TOP VIEW
Total
Capacitance
C T (pF) at –8 V
max
6.5
3
Model Number
Model Number
50.0
0.031
TYP
0.80
0.035
TYP
0.90
1
2
(SINGLE)
1
2
(COMMON CATHODE)
0.115 ± 0.005
2.93 ± 0.13
0.079
2.0
10.0
0.038 ± 0.003
0.96 ± 0.065
0.037
0.95
CT (pF)
5.0
GVD20448-001
0.051 ± 0.004
1.3 ± 0.1
0.091 ± 0.008
2.3 ± 0.2
0.037
0.95
3.0
GVD20446-001
2.0
GVD20444-001
1.0
GVD20450-001
PAD LAYOUT
0.021 ± 0.003
0.53 ± 0.08
0.075 ± 0.005
1.91 ± 0.13
0.040 ± 0.007
1.03 ± 0.18
0.5
0.016 ± 0.002
0.41 ± 0.04
TYP
0.3
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TYP
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
4
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES
SG-950
SUPER HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
APPLICATIONS
• Mesa epitaxial silicon construction
• PCS
• WANS
• DECT
• Silicon dioxide passivated
• GSM
• TAGS
• AMPS
• Fits footprint for SOD-323, SOD-123 and smaller
• Cellular
• High frequency (VHF to 8 GHz)
SPECIFICATIONS
• Available on carrier and reel
• Available in chip form (add suffix -000)
Reverse breakdown voltage at 10 µA DC
(at 25°C): 12 V min
• Two package styles including lower cost, flat
top version
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
• Alternate notched termination version available,
contact factory for outline drawing
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Total
Capacitance
C T (pF) at –1 V
min
36.0
26.0
17.0
13.0
9.0
4.0
1.8
1.2
0.6
Total
Capacitance
C T (pF) at –2.5 V
min
max
18.0
27.0
13.0
20.0
8.5
13.0
6.5
10.0
4.5
6.5
2.0
3.0
1.1
1.5
0.8
1.1
0.5
0.8
Total
Capacitance
C T (pF) at –4 V
max
12.0
9.0
6.0
4.5
3.0
1.5
0.8
0.6
0.4
Total
Capacitance
C T (pF) at –8 V
max
6.2
4.7
3.2
2.7
1.7
1.0
0.55
0.45
0.35
Q min
at –4 V
(50 MHz)
400
500
600
750
900
1200
1400
1600
1800
Model
Number*
GVD90001 – _
GVD90002 – _
GVD90003 – _
GVD90004 – _
GVD90005 – _
GVD90006 – _
GVD90007 – _
GVD90008 – _
GVD90009 – _
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
* For complete model number, select “Dash No.” from chart below.
TERMINATIONS (GOLD PLATED)
DOT INDICATES
CATHODE END
D TYP
TOP VIEW
EPOXY
ENCAPSULANT
K TYP
A
- 011
0.10
- 111
2.5
- 012
0.12
- 112
3.0
B
C1
C2
D
K
L
M
B
A
BOTTOM VIEW
Dash
No.
0.050 0.035 0.050
1.3
0.89
1.3
0.060 0.035 0.050
1.5
0.89
1.3
0.015 ± 0.004
0.38 ± 0.1
0.020 ± 0.005
0.51 ± 0.1
0.030 0.070 0.112
0.76
1.8
2.84
0.030 0.080 0.132
0.76
2.0
3.35
C1
L
- 013
0.200 0.100 0.035 0.050
- 113
5.08
- 014
0.075 0.050 0.035 0.050
2.54
0.89
1.3
0.020 ± 0.005
0.51 ± 0.1
0.030 0.120 0.212
0.76
3.05
5.38
SIDE VIEW FOR - 01__
M
MOUNTING PAD LAYOUT
EPOXY
ENCAPSULANT
C2
- 114
- 015
SIDE VIEW FOR - 11__
- 115
1.9
1.3
0.89
1.3
0.062 0.042 0.030 0.050
1.6
1.1
0.76
1.3
0.015 ± 0.004
0.38 ± 0.1
0.011 ± 0.003
0.28 ± 0.08
0.030 0.070 0.087
0.76
1.8
2.2
0.020 0.060 0.072
0.51
1.5
1.8
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.003/ 0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
5
VARACTOR DIODES
SG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
Microwave Hyperabrupt Series
FEATURES
• Mesa epitaxial silicon construction
• High linearity VCOs
• Silicon dioxide passivated
• Phase shifters
• Superior wide range linear characteristics
SPECIFICATIONS
• High tuning ratios
Reverse breakdown voltage at 10 µA DC
(at 25°C): 20 V min
• High Q
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• Low phase noise VCOs
Operating junction temperature: –55°C to +125°C
• Phase locked loop VCOs
Storage temperature: –55°C to +125°C
Total
Capacitance
C T (pF) at –0 V
min
2.7
4.2
6.3
11.9
26.0
3
TOP VIEW
Total
Capacitance
C T (pF) at –4 V
min
max
Total
Capacitance
C T (pF) at –20 V
min
max
1.25
1.70
2.20
3.70
9.00
0.43
0.52
0.68
0.94
1.90
1.75
2.50
3.80
5.50
11.00
3
0.57
0.72
0.96
1.30
2.50
0.031
TYP
0.80
Model Number
Q min
at –4 V
(50 MHz)
Single
1000
850
700
600
400
GVD30422-001
GVD30432-001
GVD30442-001
GVD30452-001
GVD30462-001
Common
Cathode
GVD30422-004
GVD30432-004
GVD30442-004
GVD30452-004
GVD30462-004
50.0
0.035
TYP
0.90
1
2
(SINGLE)
1
2
(COMMON CATHODE)
0.115 ± 0.005
2.93 ± 0.13
0.079
2.0
10.0
0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.091 ± 0.008
2.3 ± 0.2
0.037
0.95
0.037
0.95
CT (pF)
GVD30432-001
5.0
GVD30452-001
3.0
2.0
PAD LAYOUT
0.021 ± 0.003
0.53 ± 0.08
0.075 ± 0.005
1.91 ± 0.13
GVD30422-001
1.0
0.040 ± 0.007
1.03 ± 0.18
0.5
0.016 ± 0.002
0.41 ± 0.04
TYP
0.3
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TYP
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
6
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES
SG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
VHF/UHF Hyperabrupt Series
FEATURES
• Mesa epitaxial silicon construction
• High linearity VCOs
• Silicon dioxide passivated
• Phase shifters
• Superior wide range linear characteristics
SPECIFICATIONS
• High tuning ratios
Reverse breakdown voltage at 10 µA DC
(at 25°C): 25 V min
• High Q
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• Low phase noise VCOs
Operating junction temperature: –55°C to +125°C
• Phase locked loop VCOs
Storage temperature: –55°C to +125°C
Total
Capacitance
C T (pF) at –3 V
min
max
Total
Capacitance
C T (pF) at –25 V
min
max
9.5
9.5
26.0
26.0
1.8
1.8
4.3
4.3
14.5
14.5
32.0
32.0
3
TOP VIEW
Single
Common
Cathode
200
750
200
500
GVD30501-001
GVD30502-001
GVD30503-001
GVD30504-001
—
—
—
—
2.8
2.8
6.0
6.0
3
Model Number
Q min
at –4 V
(50 MHz)
50.0
0.031
TYP
0.80
0.035
TYP
0.90
1
2
(SINGLE)
1
2
(COMMON CATHODE)
0.115 ± 0.005
2.93 ± 0.13
0.079
2.0
GVD30503-001
10.0
CT (pF)
0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.091 ± 0.008
2.3 ± 0.2
0.037
0.95
0.037
0.95
5.0
3.0
GVD30502-001
2.0
PAD LAYOUT
0.021 ± 0.003
0.53 ± 0.08
0.075 ± 0.005
1.91 ± 0.13
1.0
0.040 ± 0.007
1.03 ± 0.18
0.5
0.016 ± 0.002
0.41 ± 0.04
TYP
0.3
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TYP
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
7
VARACTOR DIODES
SG-950
WIDEBAND HYPERABRUPT TUNING VARACTOR DIODES
VHF/UHF Hyperabrupt Series
FEATURES
• Mesa epitaxial silicon construction
• High linearity VCOs
• Silicon dioxide passivated
• Phase shifters
• Superior wide range linear characteristics
SPECIFICATIONS
• High tuning ratios
Reverse breakdown voltage at 10 µA DC
(at 25°C): 22 V min
• High Q
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• Low phase noise VCOs
Operating junction temperature: –55°C to +125°C
• Phase locked loop VCOs
Storage temperature: –55°C to +125°C
Total
Capacitance
C T (pF) at –4 V
min
max
18.0
45.0
100.0
Total
Capacitance
C T (pF) at –8 V
min
max
22.0
55.0
120.0
3
TOP VIEW
7.5
18.0
39.0
Total
Capacitance
C T (pF) at –20 V
min
max
10.5
25.0
55.0
3
2.7
6.6
14.0
Model Number
Q min
at –4 V
(50 MHz)
Single
Common
Cathode
160
125
80
GVD30601- 001
GVD30602-001
GVD30603-001
—
—
—
3.5
9.0
19.0
500
0.031
TYP
0.80
0.035
TYP
0.90
1
2
(SINGLE)
1
2
(COMMON CATHODE)
0.115 ± 0.005
2.93 ± 0.13
100
0.079
2.0
0.051 ± 0.004
1.3 ± 0.1
0.091 ± 0.008
2.3 ± 0.2
GVD30602-001
50
0.038 ± 0.003
0.96 ± 0.065
0.037
0.95
GVD30603-001
CT (pF)
0.037
0.95
GVD30601-001
PAD LAYOUT
0.021 ± 0.003
0.53 ± 0.08
0.016 ± 0.002
0.41 ± 0.04
TYP
0.075 ± 0.005
1.91 ± 0.13
0.007 ± 0.003
0.18 ± 0.08
0.040 ± 0.007
1.03 ± 0.18
10
5
0.0047 ± 0.0013
0.12 ± 0.033
TYP
3
0.5
1
2
3
4 5 6
10
20
30
50
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
8
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES
SG-950
MICROWAVE HYPERABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
APPLICATIONS
• Mesa epitaxial silicon construction
• PCS
• WANS
• AMPS
• Silicon dioxide passivated
• GSM
• TAGS
• DECT
• Fits Footprint for SOD-323, SOD-123 and smaller
• Cellular
• High frequency (VHF to 8 GHz)
SPECIFICATIONS
• Available on carrier and reel
• Available in chip form (add suffix -000)
Reverse breakdown voltage at 10 µA DC
(at 25°C): 22 V min
• Two package styles including lower cost, flat
top version
Maximum reverse leakage current at –20 V
(at 25°C): 0.05 µA DC
• Alternate notched termination version available,
contact factory for outline drawing
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Total
Capacitance
C T (pF) at 0 V
typical
26.0
14.0
7.0
5.0
3.0
2.0
Total
Capacitance
C T (pF) at –4 V
min
max
Total
Capacitance
C T (pF) at –20 V
min
max
8.75
4.45
2.65
1.75
1.30
0.85
1.85
0.85
0.65
0.50
0.40
0.30
10.80
5.50
3.30
2.20
1.65
1.10
Q min
at –4 V
(50 MHz)
2.50
1.30
0.90
0.70
0.55
0.45
Model
Number*
GVD92101 – _
GVD92102 – _
GVD92103 – _
GVD92104 – _
GVD92105 – _
GVD92106 – _
400
600
700
850
1000
1200
_
_
_
_
_
_
_
_
_
_
_
_
* For complete model number, select “Dash No.” from chart below.
TERMINATIONS (GOLD PLATED)
DOT INDICATES
CATHODE END
D TYP
TOP VIEW
EPOXY
ENCAPSULANT
K TYP
A
- 011
0.10
- 111
2.5
- 012
0.12
- 112
3.0
B
C1
C2
D
K
L
M
B
A
BOTTOM VIEW
Dash
No.
0.050 0.035 0.050
1.3
0.89
1.3
0.060 0.035 0.050
1.5
0.89
1.3
0.015 ± 0.004
0.38 ± 0.1
0.020 ± 0.005
0.51 ± 0.1
0.030 0.070 0.112
0.76
1.8
2.84
0.030 0.080 0.132
0.76
2.0
3.35
C1
L
- 013
0.200 0.100 0.035 0.050
- 113
5.08
- 014
0.075 0.050 0.035 0.050
2.54
0.89
1.3
0.020 ± 0.005
0.51 ± 0.1
0.030 0.120 0.212
0.76
3.05
5.38
SIDE VIEW FOR - 01__
M
MOUNTING PAD LAYOUT
EPOXY
ENCAPSULANT
C2
- 114
- 015
SIDE VIEW FOR - 11__
- 115
1.9
1.3
0.89
1.3
0.062 0.042 0.030 0.050
1.6
1.1
0.76
1.3
0.015 ± 0.004
0.38 ± 0.1
0.011 ± 0.003
0.28 ± 0.08
0.030 0.070 0.087
0.76
1.8
2.2
0.020 0.060 0.072
0.51
1.5
1.8
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.003/ 0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
9
VARACTOR DIODES
SG-950
HIGH Q ABRUPT TUNING VARACTOR DIODES
FEATURES
• Mesa epitaxial silicon construction
• Phase locked loop VCOs
• Silicon dioxide passivated
• Moderate bandwidth VCOs
• Economy price
SPECIFICATIONS
• Mil grade performance
Reverse breakdown voltage at 10 µA DC
(at 25°C): 30 V min
• High Q
Maximum reverse leakage current at –25 V
(at 25°C): 0.05 µA DC
• Available in common cathode style
• Available in chip form (add suffix -000)
APPLICATIONS
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
• Low phase noise VCOs
Operating junction temperature: –55°C to +125°C
Storage temperature: –55°C to +125°C
Total
Capacitance
C T (pF) at –4 V
(±10 %)
Capacitance
Ratio
C T at 0 V
C T at –30 V
min
Q min
at –4 V
(50 MHz)
Single
Common
Cathode
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
6.8
8.2
10.0
12.0
15.0
18.0
22.0
3.4
3.5
3.5
3.7
3.7
3.8
3.9
3.9
4.0
4.0
4.0
4.1
4.1
4.2
4.2
4.2
3200
3000
3000
3000
2500
2500
2500
2000
2000
2000
2000
1800
1600
1250
1000
850
GVD1202-001
GVD1203-001
GVD1204-001
GVD1205-001
GVD1206-001
GVD1207-001
GVD1208-001
GVD1209-001
GVD1210-001
GVD1211-001
GVD1212-001
GVD1213-001
GVD1214-001
GVD1215-001
GVD1216-001
GVD1217-001
GVD1202-004
GVD1203-004
GVD1204-004
GVD1205-004
GVD1206-004
GVD1207-004
GVD1208-004
GVD1209-004
GVD1210-004
—
—
—
—
—
—
—
3
TOP VIEW
3
Model Number
20
0.031
TYP
0.80
0.035
TYP
0.90
1
2
(SINGLE)
10
1
2
(COMMON CATHODE)
0.115 ± 0.005
2.93 ± 0.13
0.079
2.0
GVD1213-001
5
0.038 ± 0.003
0.96 ± 0.065
0.051 ± 0.004
1.3 ± 0.1
0.091 ± 0.008
2.3 ± 0.2
0.037
0.95
0.037
0.95
GVD1211-001
JUNCTION 3
CAPACITANCE
(pF)
2
GVD1207-001
GVD1203-001
PAD LAYOUT
0.021 ± 0.003
0.53 ± 0.08
0.016 ± 0.002
0.41 ± 0.04
TYP
0.075 ± 0.005
1.91 ± 0.13
GVD1209-001
1
0.040 ± 0.007
1.03 ± 0.18
0.5
0.007 ± 0.003
0.18 ± 0.08
0.0047 ± 0.0013
0.12 ± 0.033
TYP
1
2
3
4
5 6
10
20
30
REVERSE VOLTAGE
(VOLTS)
SOT-23 PACKAGE - Consult factory for additional package configurations.
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
10
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
VARACTOR DIODES
SG-950
MICROWAVE ABRUPT TUNING VARACTOR DIODES
Surface Mount Low Parasitic Package (SMLP)
FEATURES
APPLICATIONS
• Mesa epitaxial silicon construction
• PCS
• WANS
• AMPS
• Silicon dioxide passivated
• GSM
• TAGS
• DECT
• Fits Footprint for SOD-323, SOD-123 and smaller
• Cellular
• High Frequency (VHF to 8 GHz)
SPECIFICATIONS
• Available on carrier and reel
• Available in chip form (add suffix -000)
Reverse breakdown voltage at 10 µA DC
(at 25°C): 30 V min
• Two package styles including lower cost, flat
top version
Maximum reverse leakage current at –25 V
(at 25°C): 0.05 µA DC
• Alternate notched termination version available,
contact factory for outline drawing
Device dissipation at 25°C: 250 mW (derated
linearly to zero at +125°C)
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Capacitance
Ratio
C T at 0 V
C T at –4 V
min
1.5
1.6
1.7
1.8
1.9
2.0
2.0
2.1
2.1
2.2
2.2
Total
Capacitance
C T (pF) at –4 V
(±10%)
0.8
1.0
1.2
1.5
1.8
2.2
2.7
3.3
3.9
4.7
5.6
Capacitance
Ratio
C T at –4 V
C T at –30 V
min
1.45
1.55
1.60
1.65
1.70
1.75
1.80
1.85
1.90
1.95
2.00
Q min
at –4 V
(50 MHz)
Model
Number*
3900
3800
3700
3600
3500
3400
3300
3100
2700
2600
2500
GVD91300
GVD91301
GVD91302
GVD91303
GVD91304
GVD91305
GVD91306
GVD91307
GVD91308
GVD91309
GVD91310
–
–
–
–
–
–
–
–
–
–
–
K
L
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
* For complete model number, select “Dash No.” from chart below.
TERMINATIONS (GOLD PLATED)
DOT INDICATES
CATHODE END
D TYP
TOP VIEW
EPOXY
ENCAPSULANT
K TYP
A
- 011
0.10
- 111
2.5
- 012
0.12
- 112
3.0
B
C1
C2
D
M
B
A
BOTTOM VIEW
Dash
No.
0.050 0.035 0.050
1.3
0.89
1.3
0.060 0.035 0.050
1.5
0.89
1.3
0.015 ± 0.004
0.38 ± 0.1
0.020 ± 0.005
0.51 ± 0.1
0.030 0.070 0.112
0.76
1.8
2.84
0.030 0.080 0.132
0.76
2.0
3.35
C1
L
- 013
0.200 0.100 0.035 0.050
- 113
5.08
- 014
0.075 0.050 0.035 0.050
2.54
0.89
1.3
0.020 ± 0.005
0.51 ± 0.1
0.030 0.120 0.212
0.76
3.05
5.38
SIDE VIEW FOR - 01__
M
MOUNTING PAD LAYOUT
EPOXY
ENCAPSULANT
C2
- 114
- 015
SIDE VIEW FOR - 11__
- 115
1.9
1.3
0.89
1.3
0.062 0.042 0.030 0.050
1.6
1.1
0.76
1.3
0.015 ± 0.004
0.38 ± 0.1
0.011 ± 0.003
0.28 ± 0.08
0.030 0.070 0.087
0.76
1.8
2.2
0.020 0.060 0.072
0.51
1.5
1.8
All dimensions are in / mm. Unless otherwise specified, the tolerance on dimensions is ± 0.003/ 0.08.
Note: An SMLP package with three terminations sized to fit the pad layout for an SOT-23 package is also available. This
package can be used for multiple diode designs (such as common cathode or common anode). Contact factory
for the three-terminal SMLP outline drawing, and for further information on the multiple diode configurations.
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
11
VARACTOR DIODES
SG-950
MINIATURE MICROWAVE SILICON VARACTOR DIODES
Surface Mount Monolithic Package (SMMP)
FEATURES
APPLICATIONS
• Multilayer construction
Microwave Voltage Controlled Oscillators (VCOs)
• Low SMT profile
Ideal for Wide Bandwidth Applications (VHF-10 GHz)
• Low series inductance
SPECIFICATIONS
• Low parasitic capacitance ( 0.06 pF )
Reverse breakdown voltage at 10 µA DC
(at 25°C): See below
• High Q
Maximum reverse leakage current at –10 V
(at 25°C): 0.05 µA DC
• Available on carrier and reel
Operating junction temperature: –65°C to +125°C
Storage temperature: –65°C to +125°C
Total
Capacitance
C T (pF) at –1 V
min
max
2.6
3.8
Capacitance
Ratio
C T at –1 V
C T at –3 V
min
max
1.4
2.2
Capacitance
Ratio
C T at –1 V
C T at –6 V
min
max
2.6
3.6
Q min
at –4 V
(50 MHz)
Model
Number
1500
GVD60100
Q min
at –4 V
(50 MHz)
Model
Number
1000
GVD60200
Reverse breakdown voltage at 10 µA DC: 15 V min
Total
Capacitance
C T (pF) at –0 V
typical
3.25
Total
Capacitance
C T (pF) at –4 V
min
max
0.9
1.5
Total
Capacitance
C T (pF) at –20 V
max
max
0.2
0.45
Reverse breakdown voltage at 10 µA DC: 22 V min
Models shown above supplied bulk in vials.
For 300 pc gel pack, add “-03" to the model number.
For 5000 pc carrier and reel, add “-50" to the model number.
MARKING FOR
CATHODE END
0.019
0.48
TOP VIEW
0.040
1.02
0.015
0.38
SIDE VIEW
GOLD METALIZED
PADS (2 PLACES)
0.020
0.51
BOTTOM VIEW
0.011
0.28
0.016
0.41
0.012
0.30
All dimensions are in / mm.
Unless otherwise specified, the tolerance on dimensions is ± 0.004 / 0.1.
12
SPRAGUE-GOODMAN ELECTRONICS, INC., 1700 SHAMES DRIVE, WESTBURY, NY 11590 • TEL: 516-334-8700 • FAX: 516-334-8771 • E-MAIL: info@ spraguegoodman.com
© 2000 SPRAGUE-GOODMAN ELECTRONICS, INC., ALL RIGHTS RESERVED.
PRINTED IN THE U.S.A.
50104