Jiangsu CJAB35N03 N-channel power mosfet Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
PDFN:%3.3×3.3-8L Plastic-Encapsulate MOSFETS
CJAB35N03
N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
PDFN:%3.3×3.3-8L
7mΩ@10V
30 V
12mΩ@4.5V
35A
DESCRIPTION
The CJAB35N03 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications
FEATURES

High density cell design for ultra low RDS(ON)

Excellent package for good heat dissipation

Fully characterized avalanche voltage and

Special process technology for high ESD
current

capability
Good stability and uniformity with high EAS
APPLICATIONS
 High side switch in POL DC/DC converter
MARKING

Secondary side synchronous rectifier
EQUIVALENT CIRCUIT
D
CJAB35N03 = Part No.
8
D
7
D
6
D
5
Solid dot=Pin1 indicator
XXX=Date Code
2
1
S
3
S
4
S
G
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
ID(1)
35
A
Pulsed Drain Current
IDM
120
A
150
mJ
1.5
W
83.3
℃/W
Single Pulsed Avalanche Energy
EAS
Power Dissipation
(2)
PD
Thermal Resistance from Junction to Ambient
RθJA
(1)
Junction Temperature
TJ
150
℃
Storage Temperature Range
Tstg
-55 ~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
℃
(1).Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
(2).EAS condition: VDD=15V,L=0.1mH, RG=25Ω, Starting TJ = 25°C
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A-6,Oct,2016
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
V(BR) DSS
VGS = 0V, ID =250µA
Zero gate voltage drain current
IDSS
VDS =30V, VGS =0V
1
µA
Gate-body leakage current
IGSS
VDS =0V, VGS =±20V
±100
nA
Gate-threshold voltage
VGS(th)
VDS =VGS, ID =250µA
1.6
3.0
V
VGS =4.5V, ID =10A
8.2
RDS(on)
12
mΩ
Static drain-source on-sate resistance
VGS =10V, ID =12A
5.5
7.0
mΩ
Off characteristics
Drain-source breakdown voltage
30
V
On characteristics (note1)
Forward transconductance
gFS
VDS =10V, ID =12A
1.0
30
S
Dynamic characteristics (note 2)
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
1265
VDS =15V,VGS =0V,
f =1MHz
pF
600
130
Switching characteristics (note 2)
Total gate charge
Qg
19
VDS=15V, VGS=10V,
Gate-source charge
Qgs
Gate-drain charge
Qgd
2.5
Turn-on delay time
td(on)
18
Turn-on rise time
Turn-off delay time
ID=12A
tr
VDD=15V,ID=12A,
10
td(off)
VGS=10V,RG=6Ω
34
Turn-off fall time
tf
nC
2.7
ns
10
Drain-Source Diode Characteristics
Drain-source diode forward voltage(note1)
VSD
1.2
V
IS
35
A
ISM
120
A
Continuous drain-source diode forward
current(note3)
Pulsed drain-source diode forward current
VGS =0V, IS=12A
0.85
Notes:
1.
Pulse Test : Pulse Width≤300µs, duty cycle ≤2%.
2.
Guaranteed by design, not subject to production.
3.
Surface Mounted on FR4 Board, t ≤ 10 sec.
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A-6,Oct,2016
Typical Characteristics
Transfer Characteristics
Output Characteristics
120
VGS= 10V
120
Pulsed Duration=80us
Duty Cycle=0.5%MAX
VDD=5V
Pulsed
VGS= 5V
100
100
(A)
ID
80
DRAIN CURRENT
DRAIN CURRENT
ID
(A)
VGS= 4.5V
VGS= 4.0V
60
40
VGS= 3.5V
20
0.5
1.0
2.0
1.5
2.5
DRAIN TO SOURCE VOLTAGE
RDS(ON) ——
3.0
VDS
3.5
0
1
(V)
2
5
VGS
6
(V)
Pulsed
ID=12A
18
Pulsed
16
(m)
VGS=4.5V
9
RDS(ON)
8
7
ON-RESISTANCE
6
5
VGS=10V
4
3
14
12
10
Ta=100℃
8
6
Ta=25℃
4
2
1
0
2
4
6
8
10
DRAIN CURRENT
12
ID
14
16
18
0
20
3
(A)
4
5
7
8
VGS
9
10
(V)
Threshold Voltage
2.50
Pulsed
100
6
GATE TO SOURCE VOLTAGE
IS —— VSD
200
(V)
2.25
VTH
10
Ta=100℃
Ta=25℃
THRESHOLD VOLTAGE
IS (A)
4
RDS(ON)—— VGS
ID
2
SOURCE CURRENT
3
GATE TO SOURCE VOLTAGE
Ta=25℃
10
(m)
40
20
11
RDS(ON)
60
0
4.0
12
ON-RESISTANCE
Ta=25℃
20
0
0.0
0
80
1
0.1
2.00
1.75
ID=250uA
1.50
1.25
1.00
0.75
0.50
0.25
0.01
0
200
400
600
SOURCE TO DRAIN VOLTAGE
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800
1000
0.00
25
1200
VSD (mV)
50
75
JUNCTION TEMPERATURE
3
100
TJ
125
(℃ )
A-6,Oct,2016
Symbol
A
A1
A2
D
D1
E
E1
E2
b
e
L
L1
L2
L3
H
θ
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4
Dimensions In Millimeters
Min.
Max.
0.650
0.850
0.152 REF.
0~0.05
2.900
3.100
2.300
2.600
2.900
3.100
3.150
3.450
1.535
1.935
0.200
0.400
0.550
0.750
0.300
0.500
0.180
0.480
0~0.100
0~0.100
0.315
0.515
9°
13°
Dimensions In Inches
Min.
Max.
0.026
0.033
0.006 REF.
0~0.002
0.114
0.122
0.091
0.102
0.114
0.122
0.124
0.136
0.060
0.076
0.008
0.016
0.022
0.030
0.012
0.020
0.007
0.019
0~0.004
0~0.004
0.012
0.020
9°
13°
A-6,Oct,2016
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A-6,Oct,2016
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