MBRTA800150 thru MBRTA800200R
Silicon Power
Schottky Diode
VRRM = 150 V - 200 V
IF(AV) = 800 A
Features
• High Surge Capability
• Types from 150 V to 200 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Conditions
MBRTA800150(R)
MBRTA800200(R)
Unit
VRRM
150
200
V
VRMS
106
141
V
VDC
Tj
Tstg
150
-55 to 150
-55 to 150
200
-55 to 150
-55 to 150
V
°C
°C
Symbol
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
MBRTA800150(R)
MBRTA800200(R)
Unit
Average forward current (per
pkg)
IF(AV)
TC = 100 °C
800
800
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
6000
6000
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 400 A, Tj = 25 °C
0.88
0.92
V
Reverse current at rated DC
blocking voltage (per leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
5
10
50
5
10
50
mA
0.25
0.25
°C/W
Parameter
Thermal characteristics
Thermal resistance, junction case (per leg)
RΘJC
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MBRTA800150 thru MBRTA800200R
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MBRTA800150 thru MBRTA800200R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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