N-Channel MOSFET 500V, 16.5A, 0.35Ω Features General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. VDS = 500V ID = 16.5A @VGS = 10V RDS(ON) ≤ 0.35Ω @VGS = 10V Applications Power Supply HID Lighting D G TO-247 D G G S G S Absolute Maximum Ratings (Ta = 25oC) Characteristics Symbol Rating Unit Drain-Source Voltage VDSS 500 V Gate-Source Voltage VGSS ±30 V 16.5 A 10.4 A 66 A 215 W 1.64 W/ oC EAR 21.5 mJ dv/dt 4.5 V/ns mJ o TC=25 C Continuous Drain Current ID o TC=100 C Pulsed Drain Current(1) IDM o TC=25 C Power Dissipation o Derate above 25 C Repetitive Avalanche Energy Peak Diode Recovery dv/dt (1) (3) Single Pulse Avalanche Energy (4) Junction and Storage Temperature Range PD EAS 780 TJ, Tstg -55~150 Symbol Rating o C * ID limited by maximum junction temperature Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient (1) Thermal Resistance, Junction-to-Case(1) Jun 2011 Version 1.2 1 RθJA 40 RθJC 0.58 Unit o C/W MagnaChip Semiconductor Ltd. MDQ16N50G N-Channel MOSFET 500V MDQ16N50G Part Number Temp. Range o Package Packing RoHS Status MDQ16N50GTP -55~150 C TO-247 Tube Pb Free MDQ16N50GTH -55~150oC TO-247 Tube Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 500 - - V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 3.0 - 5.0 V IDSS VDS = 500V, VGS = 0V - - 1 μA IGSS VGS = ±30V, VDS = 0V - Drain Cut-Off Current Gate Leakage Current Drain-Source ON Resistance Forward Transconductance RDS(ON) VGS = 10V, ID = 8.3A gfs VDS = 30V, ID = 8.3A - 100 nA 0.30 0.35 Ω - 14.8 - S - 34.9 - - 12.4 - Dynamic Characteristics Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - 14.2 - Input Capacitance Ciss - 1724 - VDS = 400V, ID = 16A, VGS = 10V(3) Reverse Transfer Capacitance Crss - 8.3 - Output Capacitance Coss - 226 - Turn-On td(on) - 46 - - 88.5 - - 96.5 - - 41 - - - 16.5 A - - 1.4 V - 325 - ns - 3.34 - μC Delay Time Rise Time Turn-Off Delay Time Fall Time tr td(off) VDS = 25V, VGS = 0V, f = 1.0MHz nC VGS = 10V, VDS = 250V, ID = 16A, RG = 25Ω(3) tf pF ns Drain-Source Body Diode Characteristics Maximum Continuos Drain to Source Diode Forward Current IS Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 16.5A, VGS = 0V IF = 16A, dl/dt = 100A/μs(3) Notes : 1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C. 2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature T J(MAX)=150°C. 3. ISD ≤16.0A, di/dt≤200A/us, VDD≤BVdss, Rg =25Ω, Starting TJ=25°C 4. L=5.16mH, IAS=16.5A, VDD=50V, Rg =25Ω, Starting TJ=25°C Jun 2011 Version 1.2 2 MagnaChip Semiconductor Ltd. MDQ16N50G N-Channel MOSFET 500V Ordering Information MDQ16N50G N-Channel MOSFET 500V 0.7 35 25 0.6 ℃ RDS(ON) [Ω ] 30 ID,Drain Current [A] Notes 1. 250㎲ Pulse Test 2. TC=25 Vgs=5.5V =6.0V =6.5V =7.0V =8.0V =10.0V =15.0V 20 15 0.5 VGS=10.0V 0.4 VGS=20V 10 0.3 5 0 0 10 0.2 20 5 10 15 VDS,Drain-Source Voltage [V] 25 30 35 40 Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 1.2 3.0 ※ Notes : BVDSS, (Normalized) Drain-Source Breakdown Voltage ※ Notes : RDS(ON), (Normalized) Drain-Source On-Resistance 20 ID,Drain Current [A] 1. VGS = 10 V 2. ID = 8.3A 2.5 2.0 1.5 1.0 0.5 0 50 100 1.1 1.0 0.9 0.8 -50 0.0 -50 1. VGS = 0 V 2. ID = 250㎂ 150 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 Breakdown Voltage Variation vs. Temperature ※ Notes : * Notes ; 1. VDS=30V IDR Reverse Drain Current [A] 1. VGS = 0 V 2. 250㎲ Pulse Test ID [A] 10 150 ℃ 25 -55 ℃ ℃ 10 o o 150 C 25 C 1 1 4 5 6 7 8 0.0 9 0.4 0.6 0.8 1.0 1.2 VSD, Source-Drain Voltage [V] VGS [V] Fig.5 Transfer Characteristics Jun 2011 Version 1.2 0.2 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Coss 3500 100V VGS, Gate-Source Voltage [V] MDQ16N50G N-Channel MOSFET 500V 4000 ※ Note : ID = 16A 10 250V 8 3000 Capacitance [pF] 400V 6 4 2 Ciss 2500 2000 ※ Notes ; 1500 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 0 0 0 5 10 15 20 25 30 1E11 35 1E12 Fig.7 Gate Charge Characteristics 10 1E13 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Fig.8 Capacitance Characteristics 2 10 s Operation in This Area is Limited by R DS(on) 100 s 16 1 ms 14 10 ms 100 ms 1 DC 10 10 ID, Drain Current [A] ID, Drain Current [A] 10 0 -1 12 10 8 6 4 Single Pulse TJ=Max rated TC=25 2 ℃ 10 -2 10 -1 10 0 10 1 10 0 25 2 50 75 100 150 ℃ Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case Temperature 24000 0 10 single Pulse RthJC = 0.58 /W TC = 25 21000 ℃ D=0.5 ℃ 18000 0.2 15000 Power (W) Zθ JC(t), Thermal Response 125 TC, Case Temperature [ ] VDS, Drain-Source Voltage [V] -1 10 0.1 0.05 0.02 9000 6000 ※ Notes : 0.01 Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC RΘ JC=0.58 /W -2 10 12000 3000 ℃ single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 0 1E-5 1 10 t1, Rectangular Pulse Duration [sec] 1E-3 0.01 0.1 1 Pulse Width (s) Fig.12 Single Pulse Maximum Power Dissipation Fig.11 Transient Thermal Response Curve Jun 2011 Version 1.2 1E-4 4 MagnaChip Semiconductor Ltd. TO-247 E ΦP Dimensions are in millimeters, unless otherwise specified A L1 D E2 D1 S Q A2 b2 L b1 b E1 c e Dimension Min(mm) Max(mm) A 4.70 5.31 A1 2.20 2.60 A2 1.50 2.49 b 0.99 1.40 b1 2.59 3.43 b2 1.65 2.39 c 0.38 0.89 D 20.30 21.46 D1 13.08 - E 15.45 16.26 E1 13.06 14.02 E2 4.32 e 5.49 5.45BSC L 19.81 20.57 L1 - 4.50 ΦP 3.50 3.70 Q 5.38 6.20 S Jun 2011 Version 1.2 A1 6.15BSC 5 MagnaChip Semiconductor Ltd. MDQ16N50G N-Channel MOSFET 500V Physical Dimension MDQ16N50G N-Channel MOSFET 500V DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. Jun 2011 Version 1.2 6 MagnaChip Semiconductor Ltd.