DMN3027LFG Green N-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Product Summary Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100% UIS (Avalanche) Rated 100% Rg Tested Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) making it ideal for high-efficiency power management applications. Qualified to AEC-Q101 Standards for High Reliability Applications Mechanical Data Backlighting Case: POWERDI®3333-8 DC-DC Converters Power Management Functions Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) RDS(ON) max ID TA = +25°C 18.6mΩ @ VGS = 10V 8.0A 26.5mΩ @ VGS = 4.5V 6.5A BVDSS NEW PRODUCT ADVANCE INFORMATION Features 30V Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, POWERDI®3333-8 D Pin 1 S S S G G D D S D D Top View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number DMN3027LFG-7 DMN3027LFG-13 Notes: Case POWERDI®3333-8 POWERDI®3333-8 Packaging 2,000 / Tape & Reel 3,000 / Tape & Reel 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N37 N37 = Product Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 15 for 2015) WW = Week Code (01 – 53) POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 1 of 7 www.diodes.com October 2015 © Diodes Incorporated DMN3027LFG Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS NEW PRODUCT ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 10V Steady State Continuous Drain Current (Note 6) VGS = 10V t10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State Continuous Drain Current (Note 6) VGS = 4.5V t10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID Value 30 ±25 5.3 4.2 Unit V V ID 8.0 6.3 A ID 9.5 7.7 A ID 6.5 4.9 A A IDM IAR EAR 7.8 6.2 70 18 16 A A mJ Symbol PD RθJA PD RθJA PD RθJA TJ, TSTG Max 1.0 130.6 2.07 62.5 3.0 43.8 -55 to +150 Unit W °C/W W °C/W W °C/W °C ID Pulsed Drain Current (Note 7) Avalanche Current (Notes 7 & 8) Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Power Dissipation (Note 6) t10s Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) t10s Operating and Storage Temperature Range Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on 2” x 2” FR-4 PCB with high coverage 2 oz. Copper, single sided. 7. Repetitive rating, pulse width limited by junction temperature. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C. Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 100 ±100 V nA nA VGS = 0V, ID = 250µA VDS = 30V, VGS = 0V VGS = ±25V, VDS = 0V VGS(TH) RDS(ON) VSD 1.2 13.5 22 0.7 1.8 18.6 26.5 1.0 V Static Drain-Source On-Resistance 0.9 - VDS = VGS, ID = 250μA VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF - 580 110 70 2.0 5.3 11.3 1.9 1.9 4.4 4.6 19.5 5.8 3.0 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ V pF Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 10A nC VGS = 10V, VDS = 15V, ID = 10A ns ns ns ns VGS = 10V, VDS = 15V, RL = 15Ω, RG = 6Ω 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 2 of 7 www.diodes.com October 2015 © Diodes Incorporated DMN3027LFG 30.0 30 VDS = 5.0V VGS = 4.0V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V 25.0 20.0 15.0 VGS = 3.5V 10.0 VGS = 3.0V 5.0 20 15 10 TA = 125℃ 5 TA = 150℃ VGS = 2.5V 0 0.0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.032 0.028 0.024 0.02 VGS = 4.5V 0.016 0.012 VGS = 10V 0.008 0.004 0 0 5 10 15 20 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 25 1.4 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic TA = 125℃ VGS = 4.5V, ID = 5A 1 TA = 150℃ 0.035 0.03 0.025 TA = 85℃ 0.02 TA = 25℃ 0.015 TA = -55℃ 0.01 0.005 0 0 5 10 15 20 ID, DRAIN CURRENT (A) 25 30 Figure 4. Typical On-Resistance vs. Drain Current and Temperature 0.04 0.035 0.03 VGS = 4.5V, ID = 5A 0.025 1.2 5 VGS = 4.5V 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) VGS = 10V, ID = 10A TA = 25℃ TA = -55℃ 0.5 0.045 30 1.6 TA = 85℃ 0.05 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs. Drain Current and Gate Voltage RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT ADVANCE INFORMATION VGS = 10.0V 0.02 0.015 0.8 0.01 VGS = 10V, ID = 10A 0.005 0 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 5. On-Resistance Variation with Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 3 of 7 www.diodes.com October 2015 © Diodes Incorporated 30 ID = 1mA IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 2 1.5 ID = 250μA 1 0.5 25 TA = 25oC 20 15 10 5 0 0 -50 -25 0 25 50 75 100 125 0 150 TJ, JUNCTION TEMPERATURE (℃) 0.2 0.4 0.6 0.8 1 VSD, SOURCE-DRAIN VOLTAGE (V) 1.2 Figure 8. Diode Forward Voltage vs. Current Figure 7. Gate Threshold Variation vs. Temperature 1000 10000 CT, CAPACITANCE (pF) IDSS, LEAKAGE CURRENT (nA) f=1MHz 1000 TA = 150oC 100 TA = 125oC Ciss Coss 100 Crss TA = 85oC 10 TA = 25oC 10 1 0 0 10 20 30 VDS, Drain-SOURCE VOLTAGE (V) Figure 9. Typical Leakage Current vs. Drain-Source Voltage 10 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Total Capacitance 20 400 P(PK), PEAK TRANSIENT POIWER (W) VGS GATE VOLTAGE (V) NEW PRODUCT ADVANCE INFORMATION DMN3027LFG 8 6 4 VDS = 15V, ID = 10A 2 0 0 2 4 6 8 10 12 Qg, Gate Charge (nC) 14 16 350 300 Single Pulse RJA = 60C/W RJA(t) = r (t) * RJA TJ - TA = P * RJA(t) 250 200 150 100 50 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 212. Single Pulse Maximum Figure Single Pulse MaximumPower PowerDissipation Dissipation Figure 11. Gate Charge POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 4 of 7 www.diodes.com October 2015 © Diodes Incorporated DMN3027LFG 100 100 PW =10µs RDS(ON) Limited 10 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) PW =100µs PW =1ms PW =10ms PW =100ms PW =1s 1 0.1 TJ(Max) = 150℃ TA = 25℃ Single Pulse DUT on 1*MRP Board VGS = 10V 0.01 0.1 PW =10s DC PW =100µs 10 PW =1ms 1 PW =10ms PW =100ms PW =1s 0.1 TJ(Max) = 150℃ TA = 60℃ Single Pulse DUT on 1*MRP Board VGS = 4.5V PW =10s DC 0.01 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 13. SOA, Safe Operation Area 100 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 14. SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT ADVANCE INFORMATION RDS(ON) Limited D=0.5 D=0.3 0.1 D=0.7 D=0.9 D=0.1 D=0.05 D=0.02 0.01 D=0.01 D=0.005 RθJA(t) = r(t) * RθJA RθJA = 60℃/W Duty Cycle, D = t1 / t2 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 15. Transient Thermal Resistance 10 100 1000 POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 5 of 7 www.diodes.com October 2015 © Diodes Incorporated DMN3027LFG Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. ® NEW PRODUCT ADVANCE INFORMATION POWERDI 3333-8 A1 A3 A Seating Plane D L(4x) D2 1 Pin #1 ID b2(4x) E E2 e1 8 z(4x) b POWERDI®3333-8 Dim Min Max Typ A 0.75 0.85 0.80 A1 0.00 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 D 3.25 3.35 3.30 D2 2.22 2.32 2.27 E 3.25 3.35 3.30 E2 1.56 1.66 1.61 e 0.65 e1 0.79 0.89 0.84 L 0.35 0.45 0.40 L1 0.39 z 0.515 All Dimensions in mm L1(3x) e Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. ® POWERDI 3333-8 X3 X2 8 Y2 X1 Y1 Y3 Y Dimensions Value (in mm) C 0.650 X 0.420 X1 0.420 X2 0.230 X3 2.370 Y 0.700 Y1 1.850 Y2 2.250 Y3 3.700 1 X C POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 6 of 7 www.diodes.com October 2015 © Diodes Incorporated DMN3027LFG IMPORTANT NOTICE NEW PRODUCT ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. 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Copyright © 2015, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMN3027LFG Document number: DS38020 Rev. 3 - 2 7 of 7 www.diodes.com October 2015 © Diodes Incorporated