DIGITRON SEMICONDUCTORS MAC4120 SERIES SILICON BIDIRECTIONAL THYRISTORS Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. MAXIMUM RATINGS Rating Symbol Peak repetitive off-state voltage (TJ = -65 to +100°C, gate open) MAC4120-B MAC4120-D MAC4120-M MAC4120-N Value Unit (1) 200 400 600 800 VDRM RMS on-state current (conduction angle = 360°, TC = 75°C) Volts IT(RMS) 15 Amps Peak non-repetitive surge current (1 cycle, 60 Hz) ITSM 100 Amps Circuit fusing considerations (t = 8.3ms) I2t 40 A2s Peak gate power (Pulse width = 1µs) PGM 16 Watts PG(AV) 0.5 Watts Average gate power Peak gate trigger current (Pulse width = 1.0µs) IGM 4 Amps Operating junction temperature range TJ -65 to +100 °C Tstg -65 to +150 °C 30 In. lb. Storage temperature range Stud torque Note 1: Ratings apply for open gate conditions. Thyristor devices shall not be tested with a constant current source for blocking capability such that the voltage applied exceeds the rated blocking voltage. THERMAL CHARACTERISTICS Characteristic Thermal resistance, junction to case Symbol Maximum Unit RӨJC 1.1 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ. Max Unit Peak blocking current (either direction) (VD = Rated VDRM @ TC = 25°C) (VD = Rated VDRM @ TC = 100°C) IDRM - - 10 2 µA mA Peak on-state voltage (either direction) (ITM = 21A peak) VTM - 1.4 1.8 Gate trigger current (continuous dc) (2) (main terminal voltage = 12V, RL = 30Ω) MT2(+),G(+);MT2(-),G(-) MT2(+),G(-);MT2(-),G(+) MT2(+),G(+);MT2(-),G(-), TC = -65°C MT2(+),G(-);MT2(-),G(+), TC = -65°C IGT - - 50 80 150 200 Gate trigger voltage (continuous dc) All quadrants (main terminal voltage = 12V, RL = 30Ω, TC = 25°C ) (main terminal voltage = 12V, RL = 30Ω, TC = -65°C ) (Rated VDRM, RL = 125Ω, TC = 100°C) VGT 0.2 - 2.5 4.0 - - - 75 300 - 1.6 2.5 2 10 - Holding current (either direction) (main terminal voltage= 12V, gate open, initiating current = 500mA, TC = 25°C) (main terminal voltage= 12V, gate open, initiating current = 500mA, TC = -65°C) IH Gate controlled turn-on time (VD = Rated VDRM, ITM = 25A peak, IGT = 160mA, rise time = 0.1µs) tgt Rate of rise of commutation voltage (Rated VDRM, IT(RMS) = 15A, commutating di/dt = 8A/ms, gate unenergized, TC = 75°C) 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 dv/dt(c) [email protected] www.digitroncorp.com Rev. 20130212 Volts mA Volts mA µs V/µs DIGITRON SEMICONDUCTORS MAC4120 SERIES SILICON BIDIRECTIONAL THYRISTORS Characteristic Symbol Critical rate of rise of off-state voltage (VD = Rated VDRM, exponential voltage rise, gate open, TC = 100°C) MAC4120-B MAC4120-D MAC4120-M MAC4120-N dv/dt Min Typ. Max 30 20 10 10 150 100 75 - - MECHANICAL CHARACTERISTIC Case TO-48 ISO Marking Body painted, alpha-numeric Polarity Cathode is stud TO-48 ISO A B C F H J K L Q T 144 Market Street Kenilworth NJ 07033 USA Inches Min Max 0.551 0.559 0.501 0.505 1.280 0.160 0.265 0.420 0.455 0.300 0.350 0.255 0.275 0.055 0.085 0.135 0.150 phone +1.908.245-7200 fax +1.908.245-0555 Millimeters Min Max 14.000 14.200 12.730 12.830 32.510 4.060 6.730 10.670 11.560 7.620 8.890 6.480 6.990 1.400 2.160 3.430 3.810 [email protected] www.digitroncorp.com Rev. 20130212 Unit V/µs