Diodes FZT949QTA 30v pnp medium power transistor Datasheet

FZT949
Green
30V PNP MEDIUM POWER TRANSISTOR IN SOT223
Features
Mechanical Data






BVCEO > -30V
IC = -5.5A High Continuous Collector Current
IC = -20A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < -140mV @ -1A
hFE Specified up to -20A for a High Gain Hold-Up
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

Case: SOT223

Case Material: Molded Plastic. “Green” Molding Compound.



Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
UL Flammability Rating 94V-0

Moisture Sensitivity: Level 1 per J-STD-020

Terminals: Finish - Matte Tin Plated Leads; Solderable per MILSTD-202, Method 208

Weight: 0.112 grams (Approximate)
C
SOT223
B
E
Top View
Device Symbol
Top View
Pin-Out
Ordering Information (Notes 4 & 5)
Product
FZT949TA
FZT949QTA
Notes:
Compliance
AEC-Q101
Automotive
Marking
FZT949
FZT949
Reel Size (inches)
7
7
Tape Width (mm)
12
12
Quantity per Reel
1,000
1,000
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally
the same, except where specified.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
FZT
949
FZT949
Datasheet Number: DS38008 Rev. 2 - 2
YWW
SOT223
FZT 949 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 7 = 2017)
WW or WW = Week Code (01~53)
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FZT949
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Collector-Base Voltage
Characteristic
Symbol
VCBO
Value
-50
Unit
V
Collector-Emitter Voltage
VCEO
-30
V
Emitter-Base Voltage
VEBO
-7
V
IC
-5.5
A
ICM
-20
A
Unit
Continuous Collector Current
Peak Pulse Current
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Thermal Resistance, Junction to Ambient
(Note 6)
(Note 7)
RθJA
RθJA
Value
3.0
24
1.6
12.8
42
78
Thermal Resistance Junction to Lead
(Note 8)
RθJL
8.8
TJ, TSTG
-55 to +150
(Note 6)
Power Dissipation
Linear Derating Factor
PD
(Note 7)
Operating and Storage Temperature Range
W
mW/°C
°C/W
°C
ESD Ratings (Note 9)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge - Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge - Machine Model
ESD MM
400
V
C
Notes:
6. For a device mounted with the collector lead on 52mm x 52mm 2oz copper that is on a single sided 1.6mm FR4 PCB; device is measured under
still air conditions whilst operating in a steady-state.
7. Same as Note 6, except mounted on 25mm x 25mm 1oz copper.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FZT949
Datasheet Number: DS38008 Rev. 2 - 2
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FZT949
10 VCE(sat)
Max Power Dissipation (W)
-IC Collector Current (A)
Thermal Characteristics and Derating Information
Limit
1
DC
1s
100ms
100m
10ms
Single Pulse. T amb=25°C
10m
100m
1ms
52mmX52mm
single sided 2oz Cu
1
100µs
10
100
-VCE Collector-Emitter Voltage (V)
3.0
2.5
52mmX52mm
single sided 2 oz Cu
2.0
1.5
1.0
25mmX25mm
single sided 1 oz Cu
0.5
0.0
0
20
D=0.5
20
Single Pulse
0
100µ
D=0.05
D=0.1
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Thermal Resistance (°C/W)
30
D=0.2
Transient Thermal Impedance
FZT949
Datasheet Number: DS38008 Rev. 2 - 2
80
100 120 140 160
Derating Curve
52mmX52mm
single sided 2 oz Cu
10
60
Temperature (°C)
Safe Operating Area
40
40
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Single Pulse. T amb=25°C
52mmX52mm
single sided 2oz Cu
100
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
April 2017
© Diodes Incorporated
FZT949
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Symbol
BVCBO
BVCER
BVCEO
BVEBO
Min
-50
-50
-30
-7
Typ.
-80
-80
-45
-8
Max
—
—
—
—
-50
-1
Unit
V
V
V
V
nA
µA
Collector Cut-Off Current
ICBO
—
—
Collector Cut-Off Current
ICER
—
—
-50
-1
-10
nA
µA
nA
Emitter Cut-Off Current
IEBO
—
100
100
75
-75
-140
-270
-440
-1,250
-1,060
Collector-Emitter Saturation Voltage (Note 10)
VCE(SAT)
Base-Emitter Saturation Voltage (Note 10)
Base-Emitter Turn-On Voltage (Note 10)
VBE(SAT)
VBE(ON)
—
—
—
200
200
140
35
-50
-85
-190
-350
-1,100
-900
fT
—
100
—
MHz
COBO
tON
tOFF
—
—
—
122
120
130
—
—
—
pF
DC Current Transfer Static Ratio (Note 10)
hFE
—
—
—
—
—
Transitional Frequency (Note 10)
Output Capacitance
Switching Time
Note:
—
300
—
—
—
mV
mV
mV
ns
Test Condition
IC = -100µA
IC = -1µA, RB ≤ 1kΩ
IC = -10mA
IE = -100µA
VCB = -40V
VCB = -40V, TA = +100°C
VCE = -40V, R ≤ 1kΩ
VCE = -40V, TA = +100°C
VEB = -6V
IC = -10mA, VCE = -1V
IC = -1A, VCE = -1V
IC = -5A, VCE = -1V
IC = -20A, VCE = -2V
IC = -500mA, IB = -20mA
IC = -1A, IB = -20mA
IC = -2A, IB = -200mA
IC = -5.5A, IB = -500mA
IC = -5.5A, IB = -500mA
IC = -5.5A, VCE = -1V
IC = -100mA, VCE = -10V,
f = 50MHz
VCB = -10V, f = 1MHz
VCC = -10V, IC = -4A,
IB1 = -IB2 = -400mA
10. Measured under pulsed conditions. Pulse width ≤ 300μs. Duty cycle ≤ 2%.
FZT949
Datasheet Number: DS38008 Rev. 2 - 2
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FZT949
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FZT949
Datasheet Number: DS38008 Rev. 2 - 2
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FZT949
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223
D
Q
b1
C
E
E1
Gauge
Plane
0.25
Seating
Plane
e1
L
b
0°
-1
0°
e
A1
7°
7°
A
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT223
X1
Y1
C1
Dimensions Value (in mm)
C
2.30
C1
6.40
X
1.20
X1
3.30
Y
1.60
Y1
1.60
Y2
8.00
Y2
Y
X
FZT949
Datasheet Number: DS38008 Rev. 2 - 2
C
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FZT949
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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website, harmless against all damages.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
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Datasheet Number: DS38008 Rev. 2 - 2
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