ON NTR5198NLT3G Power mosfet Datasheet

NTR5198NL
Power MOSFET
60 V, 155 mW, Single N−Channel Logic
Level, SOT−23
Features
• Small Footprint Industry Standard Surface Mount SOT−23 Package
• Low RDS(on) for Low Conduction Losses and Improved Efficiency
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) TYP
155 mW @ 10 V
60 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
N−Channel
Gate−to−Source Voltage
VGS
±20
V
D
ID
2.2
A
Continuous Drain
Current RYJ−mb
(Notes 1, 2, 3, and 4)
Steady
State
Power Dissipation
RYJ−mb
(Notes 1 and 3)
Continuous Drain
Current RqJA
(Note 1, 2, 3, and 4)
TA = 25°C
TA = 100°C
TA = 25°C
1.6
PD
TA = 100°C
Steady
State
Power Dissipation RqJA
(Notes 1 and 3)
TA = 25°C
1.5
W
G
0.6
ID
TA = 100°C
TA = 25°C
A
1.7
S
1.2
PD
TA = 100°C
0.9
W
3
0.4
27
A
1
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
1.9
A
SOT−23
CASE 318
STYLE 21
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
TA = 25°C,
tp = 10 ms
Operating Junction and Storage Temperature
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
IDM
Pulsed Drain Current
2.2 A
205 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
2
AA6
M
G
AA6 M G
G
1
Gate
2
Source
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NTR5198NLT1G
SOT−23
(Pb−Free)
3000 /
Tape & Reel
NTR5198NLT3G
SOT−23
(Pb−Free)
10000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
October, 2016 − Rev. 2
1
Publication Order Number:
NTR5198NL/D
NTR5198NL
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Lead #3 − Drain (Notes 2 and 3)
Parameter
RYJ−mb
86
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
139
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = 250 mA
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VGS = 0 V,
VDS = 60 V
V
70
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
10
VDS = 0 V, VGS = "20 V
"100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(TH)
VGS = VDS, ID = 250 mA
VGS(TH)/TJ
Reference to 25°C, ID = 250 mA
−6.5
RDS(on)
VGS = 10 V, ID = 1 A
107
155
VGS = 4.5 V, ID = 1 A
142
205
gFS
VDS = 5.0 V, ID = 1 A
3
S
182
pF
Forward Transconductance
1.5
2.5
V
mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VDS = 48 V,
ID = 1 A
25
16
VGS = 4.5 V
2.8
VGS = 10 V
5.1
nC
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.3
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3.1
V
Gate Resistance
RG
8
W
td(on)
5
ns
tr
7
VDS = 48 V, ID = 1 A
VGS = 10 V
0.8
1.5
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VDS = 30 V, VGS = 10 V,
ID = 1 A, RG = 10 W
tf
13
2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Stored Charge
VGS = 0 V,
IS = 1 A
TJ = 25°C
0.8
TJ = 125°C
0.6
12
IS = 1 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
QRR
1.2
V
ns
9
3
6
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NTR5198NL
VGS = 10 V
VGS = 6.0 V
VGS = 3.0 V
ID, DRAIN CURRENT (A)
VGS = 5.0 V
VGS = 4.5 V
VGS = 4.0 V
VGS = 3.8 V
VGS = 3.6 V
VGS = 3.4 V
VGS = 3.2 V
0
1
2
3
4
5
TJ = 25°C
TJ = 150°C
TJ = −55°C
3
5
4
Figure 2. Transfer Characteristics
ID = 1 A
TJ = 25°C
0.40
0.35
0.30
0.25
0.20
0.15
0.10
5
4
6
7
8
9
10
VGS, GATE VOLTAGE (V)
0.50
TJ = 25°C
0.45
0.35
0.30
0.25
VGS = 10 V
0.20
0.15
0.10
0.05
0
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID = 1 A
VGS = 10 V
−25
VGS = 4.5 V
0.40
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
2
1
Figure 1. On−Region Characteristics
0.45
3
VDS = 5 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.50
0.05
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
150
BVDSS, NORMALIZED BREAKDOWN VOLTAGE
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.150
1.125
ID = 250 mA
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
0.900
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Breakdown Voltage Variation with
Temperature
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3
150
NTR5198NL
1.20
1.15
10,000
ID = 250 mA
TJ = 150°C
IDSS, LEAKAGE (nA)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0
−25
25
50
75
100
TJ = 85°C
10
100
125
225
20
12
11
10
9
TJ = 25°C
f = 1 MHz
VGS = 0 V
125
100
75
COSS
25
CRSS
0
0 5 10 15
25
30
35 40
45
50 55 60
20
25
30 35
40
45 50
55
60
60
55
50
45
QT
8
7
VDS
40
35
VGS
30
6
5
4
3
2
1
0
QGS
0
QGD
VDS = 48 V
ID = 1 A
TJ = 25°C
25
20
15
10
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 9. Capacitance Variation
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
10
VDD = 30 V
ID = 1 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
tr
td(on)
tf
1
1
10 15
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
150
0.1
5
Figure 7. Threshold Voltage Variation with
Temperature
175
50
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
CISS
200
1
150
TJ, JUNCTION TEMPERATURE (°C)
250
t, TIME (ns)
TJ = 125°C
10
TJ = 125°C
TJ = 100°C
TJ = 85°C
1
0.1
100
TJ = 150°C
TJ = 25°C
0.4
0.5
0.6
0.7
0.8
TJ = −55°C
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.65
0.60
−50
275
C, CAPACITANCE (pF)
1000
0.70
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS(th), NORMALIZED THRESHOLD VOLTAGE
TYPICAL CHARACTERISTICS
NTR5198NL
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
10
10 mS
100 mS
1
1 mS
10 mS
0.1
0.01
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W)
VGS ≤ 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1000
100 50% Duty Cycle
20%
10%
RqJA Steady State = 139°C/W
10 5%
2%
1%
1
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (sec)
Figure 14. Thermal Impedance (Junction−to−Ambient)
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5
10
100
1000
NTR5198NL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0_
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 _
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0_
INCHES
NOM
MAX
0.039
0.044
0.002
0.004
0.017
0.020
0.006
0.008
0.114
0.120
0.051
0.055
0.075
0.080
0.017
0.022
0.021
0.027
0.094
0.104
−−−
10 _
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR5198NL/D