Advance GTVA101K42EV Thermally-Enhanced High Power RF GaN on SiC HEMT 1400 W, 50 V, 960 – 1215 MHz Advance Specification Data Sheets describe products that are being considered by Wolfspeed for development and market introduction. The target performance shown in Advance Specifications is not final and should not be used for any design activity. Please contact Wolfspeed about the future availability of these products. Description The GTVA101K42EV is a 1400-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications. It features input matching, high efficiency, and a thermally-enhanced surface-mount package with bolt-down flange. Features • GaN on SiC HEMT technology • Input matched • Typical Pulsed CW performance, 960 – 1215 MHz, 50 V, single side, 128 µs pulse width, 10% duty cycle - Output power at P3dB = 1400 W - Efficiency = 68% - Gain = 17 dB • Pb-free and RoHS compliant GTVA101K42EV Package H-36275-4 Target RF Characteristics Pulsed CW Specifications (tested in Wolfspeed test fixture) VDD = 50 V, IDQ = 200 mA, POUT (P3dB) = 1400 W peak, ƒ = 960 to 1215 MHz, pulse width = 128 µs, 10% duty cycle Characteristic Symbol Min Typ Max Unit Linear Gain Gps — 17 — dB Drain Efficiency hD — 68 — % All published data at TCASE = 25°C unless otherwise indicated ESD: Electrostatic discharge sensitive device—observe handling precautions! Rev. 02, 2018-04-03 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 2 Advance GTVA101K42EV DDC Characteristics Characteristic Conditions Symbol Min Typ Max Unit Drain-source Breakdown Voltage VGS = –8 V, ID = 100 mA V(BR)DSS 150 — — V Drain-source Leakage Current VGS = –8 V, VDS = 10 V IDSS — — 5 mA Gate Threshold Voltage VDS = 10 V, ID = 200 mA VGS(th) –3.8 –3.0 –2.7 V Symbol Min Typ Max Unit VDD 0 — 55 V VGS(Q) — –3.1 — V Recommended Operating Conditions Parameter Conditions Drain Operating Voltage VDS = 50 V, ID = 200 mA Gate Quiescent Voltage Absolute Maximum Ratings Parameter Symbol Value Unit Drain-source Voltage VDSS 125 V Gate-source Voltage VGS –10 to +2 V Gate Current IG TBD mA Drain Current ID TBD A Junction Temperature TJ 225 °C Storage Temperature Range TSTG –65 to +150 °C Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated within the operating voltage range (VDD) specified above. Thermal Chracteristics Parameter Thermal Resistance, Junction to Case Symbol Value Unit RqJC TBD °C/W Ordering Information Type and Version Order Code Package Description Shipping GTVA101K42EV V1 R0 TBD H-36275-4, bolt-down Tape & Reel, 50 pcs GTVA101K42EV V1 R2 TBD H-36275-4, bolt-down Tape & Reel, 250 pcs Evaluation Boards Order Code Frequency LTN/GTVA101K42EV E1 960 – 1215 MHzClass AB, combined outputs, RO4350B, 0.508mm thick LTN/GTVA101K42EV E2 1030 MHzClass AB, combined outputs, RO4350B, 0.508mm thick Rev. 02, 2018-05-01 Description 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 3 Advance GTVA101K42EV Pinout Diagram (top view) D1 D2 Pin D1 D2 G1 G2 S S G1 G2 Description Drain Device 1 Drain Device 2 Gate Device 1 Gate Device 2 Source (flange) H-36275-4_pd_03-28-2013 Package Outline Specifications Package H-36275-4 13.72 [.540] 2X 45° X 1.19 [45° X .047] 2x 2.03 [.080] REF CL 2X R1.59 [R.062] D1 3.23±0.51 [.127±.020] D2 S 16.612±0.500 [.654±.020] 9.144 [.360] CL 10.16 [.400] G2 G1 8X R0.51+0.13 -0.51 [ R.020+.005 -.020 ] CL CL 4X 11.68 [.460] 35.56 [1.400] 2.13 [.084] SPH 4.58+0.25 -0.13 31.242±0.280 [1.230±.011] 1.63 [.064] [.180 +.010 -.005 ] H-36275-4_po_01_10-22-2012 CL CL CL 41.15 [1.620] Diagram Notes—unless otherwise specified: 1. Interpret dimensions and tolerances per ASME Y14.5M-1994. 2. Primary dimensions are mm. Alternate dimensions are inches. 3. All tolerances ± 0.127 [.005] unless specified otherwise. 4. Pins: D1, D2 – drains; G1, G2 – gates; S – source. 5. Lead thickness: 0.127 ±0.051 mm [0.005 ±0.002 inch]. 6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]. Rev. 02, 2018-05-01 4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com 4 Advance gtVa101K42EV Revision History Revision Date Data Sheet Type Page Subjects (major changes since last revision) 01 2016-10-13 Advance All Data Sheet reflects advance specification for product development 01.1 2017-07-31 Advance 2 Added evaluation boards information 02 2018-05-01 Advance All, 2, 3 Converted to Wolfspeed Data Sheet, updated DC characteristics and max ratings table format, added pinout diagram For more information, please contact: 4600 Silicon Drive Durham, North Carolina, USA 27703 www.wolfspeed.com/RF Sales Contact [email protected] RF Product Marketing Contact [email protected] 919.407.7816 Notes Disclaimer Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or death or in applications for planning, construction, maintenance or direct operation of a nuclear facility. Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc. Rev. 02, 2018-05-01 www.wolfspeed.com