BC847PN COMPLEMENTARY PAIR SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data Epitaxial Die Construction Two Internally Isolated NPN/PNP Transistors in One Package Ideal for Medium Power Amplification and Switching Case: SOT363 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Ultra-Small Surface Mount Package Moisture Sensitivity: Level 1 per J-STD-020 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Terminals: Finish Matte Tin Finish. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.006 grams (approximate) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) SOT363 Top View C1 B2 E2 E1 B1 C2 Device Schematic Top View Ordering Information (Note 4 & 5) Part Number BC847PN-7-F BC847PN-13-F BC847PN-7R-F BC847PNQ-7-F Notes: Compliance AEC-Q101 AEC-Q101 AEC-Q101 Automotive Marking K7P K7P K7P K7P Reel Size (inches) 7 13 7 7 Tape Width (mm) 8 8 8 8 Quantity per Reel 3,000 10,000 3,000 3,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 BC847PN Document number: DS30278 Rev. 13 - 2 YM K7P K7P = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2012 Z Mar 3 Apr 4 2013 A May 5 2014 B Jun 6 1 of 6 www.diodes.com Jul 7 2015 C Aug 8 Sep 9 2016 D Oct O 2017 E Nov N Dec D November 2013 © Diodes Incorporated BC847PN Absolute Maximum Ratings: NPN, BC847B Type (Q1) (@TA = +25°C unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC ICM IEM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Value 50 45 6 100 200 200 Unit V V V mA mA mA Absolute Maximum Ratings: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.) Characteristic Symbol VCBO VCEO VEBO IC ICM IEM Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Emitter Current Value -50 -45 -6 -100 -200 -200 Unit V V V mA mA mA Value 200 625 -65 to +150 Unit mW °C/W °C Thermal Characteristics – Total Device (@TA = +25°C unless otherwise specified.) Characteristic Power Dissipation (Note 6) Total Device Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Note: Symbol PD RJA TJ, TSTG 6. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB; the device is measured under still air conditions whilst operating in a steady-state. Thermal Characteristics – Total Device Pd, POWER DISSIPATION (mW) 250 200 150 100 50 0 0 40 80 120 160 200 TA, AMBIENT TEMPERATURE (°C) Fig. 1, Power Derating Curve (Total Device) BC847PN Document number: DS30278 Rev. 13 - 2 2 of 6 www.diodes.com November 2013 © Diodes Incorporated BC847PN Electrical Characteristics: NPN, BC847B Type (Q1) (@TA = +25°C unless otherwise specified.) Characteristic (Note 7) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Symbol BVCBO BVCEO BVEBO hFE Min 50 45 6 200 Typ — — — 290 90 200 Max — — — 450 250 600 Unit V V V — Collector-Emitter Saturation Voltage VCE(sat) — Base-Emitter Saturation Voltage VBE(sat) — 700 900 — mV Base-Emitter Voltage VBE(on) 580 — 660 — 700 720 mV Collector-Cutoff Current ICBO — — — — 15 5.0 nA µA Gain Bandwidth Product fT 100 300 — MHz CCBO — 3.5 6.0 pF NF — 2.0 10 dB Collector-Base Capacitance Noise Figure Note: mV Test Condition IC = 100µA, IB = 0 IC = 10mA, IB = 0 IE = 100µA, IC = 0 VCE = 5.0V, IC = 2.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA VCB = 30V VCB = 30V, TA = +150°C VCE = 5.0V, IC = 10mA, f = 100MHz VCB = 10V, f = 1.0MHz VCE = 5V, IC = 200µA, RG = 2.0kΩf = 1.0kHz, f = 200Hz 7. Short duration pulse test used to minimize self-heating effect. 0.5 VCE, COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 1,000 100 10 IC IB = 20 0.4 0.3 0.2 TA = 100° C 0.1 TA = 25° C TA = -50 ° C 0 0.1 1 0.01 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 3. Typical Collector-Emitter Saturation Voltage vs. Collector Current (BC847B Type) 0.1 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 2. Typical DC Current Gain vs. Collector Current (BC847B Type) 1,000 T = 25° C A fT, GAIN-BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) f = 1MHz 10 6 Cibo Cobo VCE = 10V VCE =5V 100 10 0.1 VR, REVERSE VOLTAGE (V) Figure 4. Typical Capacitance Characteristics (BC847B Type) BC847PN Document number: DS30278 Rev. 13 - 2 3 of 6 www.diodes.com VCE = 2V 1.0 10 100 IC, COLLECTOR CURRENT (mA) Figure 5. Typical Gain-Bandwidth Product vs. Collector Current (BC847B Type) November 2013 © Diodes Incorporated BC847PN Electrical Characteristics: PNP, BC857B Type (Q2) (@TA = +25°C unless otherwise specified.) Characteristic (Note 8) Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage DC Current Gain Symbol BVCBO BVCEO BVEBO hFE Min -50 -45 -6 220 Typ — — — 290 -75 -250 Max — — — 475 -300 -650 Collector-Emitter Saturation Voltage VCE(sat) — Base-Emitter Saturation Voltage VBE(sat) Base-Emitter Voltage — -700 -850 — -950 mV VBE(on) -600 — -650 — -750 -820 mV Collector-Cutoff Current ICBO — — — — -15 -4.0 nA µA Gain Bandwidth Product fT 100 200 — MHz CCBO — 3 4.5 pF NF — — 10 dB Collector-Base Capacitance Noise Figure Note: Unit V V V — mV Test Condition IC = -100µA, IB = 0 IC = -10mA, IB = 0 IE = -100µA, IC = 0 VCE = -5.0V, IC = -2.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA IC = -10mA, IB = -0.5mA IC = -100mA, IB = -5.0mA VCE = -5.0V, IC = -2.0mA VCE = -5.0V, IC = -10mA VCB = -30V VCB = -30V, TA = +150°C VCE = -5.0V, IC = -10mA, f = 100MHz VCB = -10V, f = 1.0MHz VCE = -5V, IC = -200µA, RG = 2.0kΩf = 1.0kHz, f = 200Hz 8. Short duration pulse test used to minimize self-heating effect. -1,000 -0.5 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN IC IB = 10 -100 -10 -0.4 -0.3 TA = 25°C -0.2 TA = 150°C -0.1 TA = -50°C 0 -0.1 -1 -1 -1,000 -1 -10 -100 IC, COLLECTOR CURRENT (mA) Figure 7. Typical Collector-Emitter Saturation Voltage vs. Collector Current (BC857B Type) -10 -100 -1,000 IC, COLLECTOR CURRENT (mA) Figure 6. Typical DC Current Gain vs. Collector Current (BC857B Type) -1,000 ft, GAIN-BANDWIDTH PRODUCT (MHz) CAPACITANCE (pF) f = 1MHz 10 Cibo 6 Cobo -100 -10 -1 VR, REVERSE VOLTAGE (V) Figure 8. Typical Capacitance Characteristics (BC857B Type) BC847PN Document number: DS30278 Rev. 13 - 2 4 of 6 www.diodes.com -10 -100 IC, COLLECTOR CURRENT (mA) Figure 9. Typical Gain-Bandwidth Product vs. Collector Current (BC857B Type) November 2013 © Diodes Incorporated BC847PN Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A SOT363 Dim Min Max Typ A 0.10 0.30 0.25 B 1.15 1.35 1.30 C 2.00 2.20 2.10 D 0.65 Typ F 0.40 0.45 0.425 H 1.80 2.20 2.15 J 0 0.10 0.05 K 0.90 1.00 1.00 L 0.25 0.40 0.30 M 0.10 0.22 0.11 0° 8° All Dimensions in mm B C H K M J D F L Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C2 Z C2 C1 G Y Dimensions Value (in mm) Z 2.5 G 1.3 X 0.42 Y 0.6 C1 1.9 C2 0.65 X BC847PN Document number: DS30278 Rev. 13 - 2 5 of 6 www.diodes.com November 2013 © Diodes Incorporated BC847PN IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com BC847PN Document number: DS30278 Rev. 13 - 2 6 of 6 www.diodes.com November 2013 © Diodes Incorporated