MIMMG150W120X6TN 1200V 150A Six-Pack Module RoHS Compliant FEATURES □ High level of integration 3 □ IGBT CHIP(Trench+Field Stop technology) □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Solderable pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies INVERTER SECTOR ABSOLUTE MAXIMUM RATINGS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Values Unit 1200 V ±20 V TC=25°C 200 A TC=80°C 150 A tp=1ms 300 A 625 W TVj=25°C 1200 V TC=25°C 200 A TC=80°C 150 A tp=1ms 300 A TVj =125°C, t=10ms, VR=0V 4350 A2 s IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT TVj=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current I2 t MIMMG150W120X6TN INVERTER SECTOR ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit 5.0 5.8 6.5 V IGBT VGE(th) VCE(sat) Gate - Emitter Threshold Voltage VCE=VGE, IC=6.0mA Collector - Emitter IC=150A, VGE=15V, TVj=25°C 1.7 V Saturation Voltage IC=150A, VGE=15V, TVj=125°C 1.9 V VCE=1200V, VGE=0V, TVj=25°C 1 mA VCE=1200V, VGE=0V, TVj=125°C 10 mA 400 nA ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC Junction-to-Case Thermal Resistance VCE=0V,VGE±15V, TVj=125°C VCE=600V, IC=150A , VGE=±15V VCE=25V, VGE=0V, f =1MHz -400 5 Ω 1.4 µC 10.5 nF 0.4 nF VCC=600V,IC=150A, TVj =25°C 260 ns RG =2.4Ω, TVj =125°C 290 ns VGE=±15V, TVj =25°C 30 ns Inductive Load TVj =125°C 50 ns VCC=600V,IC=150A, TVj =25°C 420 ns RG =2.4Ω, TVj =125°C 520 ns VGE=±15V, TVj =25°C 70 ns Inductive Load TVj =125°C 90 ns VCC=600V,IC=150A, TVj =25°C 12 mJ RG =2.4Ω, TVj =125°C 16 mJ VGE=±15V, TVj =25°C 11 mJ Inductive Load TVj =125°C 14.5 mJ 600 A tpsc≤10µS , VGE=15V TVj=125°C,VCC=900V （ Per IGBT） 0.20 K /W Diode IF=150A , VGE=0V, TVj =25°C 1.65 V IF=150A , VGE=0V, TVj =125°C 1.65 V Reverse Recovery Time IF=150A , VR=600V 350 ns IRRM Max. Reverse Recovery Current diF/dt=-3600A/μs 160 A Erec Reverse Recovery Energy TVj =125°C 13.5 mJ RthJCD Junction-to-Case Thermal Resistance （ Per Diode） VF Forward Voltage trr 0.36 K /W MIMMG150W120X6TN NTC SECTOR CHARACTERISTIC VALUES Symbol R25 TC=25°C unless otherwise specified Parameter Resistance Test Conditions Min. TC =25°C B25/50 MODULE CHARACTERISTICS Symbol Typ. Max. Unit 5 KΩ 3375 K TC=25°C unless otherwise specified Parameter Test Conditions Min. Typ. Max. Unit 150 °C TVj max Max. Junction Temperature TVj op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended（M5） Weight 2.5 5 300 300 N· m g 300 VGE =15V 240 TVj =25°C 180 IC (A) IC (A) 240 120 TVj =125°C 60 0 0 180 TVj =125°C 120 60 1.5 2.0 2.5 3.0 3.5 VCE（V） Figure1. Typical Output Characteristics IGBT-inverter 0.5 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE（V） Figure2. Typical Output Characteristics IGBT-inverter MIMMG150W120X6TN 35 300 VCE =20V 30 240 25 TVj =25°C 180 120 TVj =125°C Eon Eoff (mJ) IC (A) VCE=600V IC=150A VGE=±15V TVj =125°C Eon 20 15 Eoff 10 60 5 0 5 0 2 10 12 14 16 8 RG（Ω） Figure4. Switching Energy vs. Gate Resistor IGBT-inverter 7 4 6 350 VCE=600V RG=2.4Ω VGE=±15V TVj =125°C 30 300 250 Eon 200 20 Eoff IC (A) Eon Eoff (mJ) 0 9 10 8 11 12 VGE（V） Figure3. Typical Transfer characteristics IGBT-inverter 40 6 150 RG=2.4Ω VGE=±15V TVj =125°C 100 10 50 0 0 0 600 800 1000 1200 1400 VCE（V） Figure6. Reverse Biased Safe Operating Area IGBT-inverter 100 50 150 200 250 300 IC（A） Figure5. Switching Energy vs. Collector Current IGBT-inverter 20.0 240 16.0 Erec (mJ) 300 IF (A) 180 0 200 400 IF=150A VCE=600V TVj =125°C 12.0 8.0 120 TVj =125°C 4.0 60 TVj =25°C 0 0 1.2 1.8 2.4 VF（V） Figure7. Diode Forward Characteristics Diode -inverter 0.6 0 0 2 4 6 8 10 12 14 16 RG（Ω） Figure8. Switching Energy vs. Gate Resistor Diode -inverter MIMMG150W120X6TN 20.0 1 RG=2.4Ω VCE=600V TVj =125°C ZthJC (K/W) Diode 12.0 8.0 IGBT 0.1 4.0 0 0 50 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) Figure10. Transient Thermal Impedance of Diode and IGBT-inverter 100 150 200 250 300 IF (A) Figure9. Switching Energy vs. Forward Current Diode-inverter 100000 IFGE =25=15V A V VCE=600V TVj =125°C 10000 R (Ω) Erec (mJ) 16.0 R 1000 100 0 20 60 80 100 120 140 160 TC（°C） Figure11. NTC Characteristics 40 MIMMG150W120X6TN Figure12. Circuit Diagram Dimensions (mm) Figure13. Package Outline