Diodes DPLS160 Low vce(sat) pnp surface mount transistor Datasheet

DPLS160
LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
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Features
•
•
•
•
•
•
Epitaxial Planar Die Construction
Complementary NPN Type Available (DNLS160)
Surface Mount Package Suited for Automated Assembly
Lead Free/RoHS Compliant (Note 1)
"Green Device" (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
SOT-23
Mechanical Data
•
•
•
•
•
•
•
C
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.008 grams (approximate)
Maximum Ratings
B
E
Schematic and Pin Configuration
@TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current - Continuous
Peak Pulse Collector Current
Base Current (DC)
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
-80
-60
-5
-1
-2
-300
Unit
V
V
V
A
A
mA
Symbol
PD
RθJA
TJ, TSTG
Value
300
417
-55 to +150
Unit
mW
°C/W
°C
Thermal Characteristics
Characteristic
Power Dissipation (Note 3) @ TA = 25°C
Thermal Resistance, Junction to Ambient (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
Notes:
1. No purposefully added lead.
2. Diode’s Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document
AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
DS31389 Rev. 4 - 2
1 of 4
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DPLS160
© Diodes Incorporated
Electrical Characteristics
Symbol
Min
Typ
Max
Unit
V(BR)CBO
V(BR)CEO
V(BR)EBO
-80
-60
-5
⎯
⎯
⎯
Collector Cutoff Current
ICBO
⎯
⎯
Collector Cutoff Current
Emitter Cutoff Current
ON CHARACTERISTICS (Note 4)
ICES
IEBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
-100
-50
-100
-100
V
V
V
nA
μA
nA
nA
DC Current Gain
hFE
200
150
100
325
250
180
⎯
⎯
⎯
V
-90
-90
-160
-160
-175
-330
mV
160
-0.95
-0.82
330
-1.1
-0.9
mΩ
V
V
VCE = -5V, IC = -1mA
VCE = -5V, IC = -500mA
VCE = -5V, IC = -1A
IC = -100mA, IB = -1mA
IC = -500mA, IB = -50mA
IC = -1A, IB = -100mA
IC = -1A, IB = -100mA
IC = -1A, IB = -50mA
VCE = -5V, IC = -1A
10
220
15
⎯
pF
MHz
VCB = -10V, f = 1.0MHz
VCE = -10V, IC = -50mA, f = 100MHz
Collector-Emitter Saturation Voltage
VCE(SAT)
Collector-Emitter Saturation Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn On Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
RCE(SAT)
VBE(SAT)
VBE(ON)
⎯
⎯
⎯
⎯
⎯
⎯
Cobo
fT
⎯
150
Test Condition
IC = -100μA, IE = 0
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -60V, IE = 0
VCB = -60V, IE = 0, TA = 150°C
VCE = -60V, VBE = 0
VEB = -5V, IC = 0
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Notes:
1.5
400
-IC, COLLECTOR CURRENT (A)
350
PD, POWER DISSIPATION (mW)
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
@TA = 25°C unless otherwise specified
300
250
200
150
100
IB = -10mA
1.2
IB = -8mA
IB = -6mA
0.9
IB = -4mA
0.6
IB = -2mA
0.3
50
0
0
50
75 100 125 150 175
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Maximum Power Dissipation vs.
Ambient Temperature
25
DS31389 Rev. 4 - 2
200
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0
0
5
1
2
3
4
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
vs. Collector-Emitter Voltage
DPLS160
© Diodes Incorporated
-VCE(SAT), COLLECTOR EMITTER
SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
0.4
400
200
0.3
0.2
0.1
0
0.001
0
0.001
0.001
0.01
0.1
1
-IC, COLLECTOR CURRENT (A)
10
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE EMITTER TURN-ON VOLTAGE (V)
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 3 Typical DC Current Gain vs. Collector Current
0.01
0.1
1
-IC, COLLECTOR CURRENT (A)
10
1.2
1.0
0.8
TA = -55°C
0.6
TA = 25°C
TA = 85°C
0.4
TA = 150°C
IC/IB = 20
0.2
0
0.001
0.01
0.1
1
-IC, COLLECTOR CURRENT (A)
10
120
100
Cibo
f = 1MHz
80
60
40
Cobo
20
0
0.01
DS31389 Rev. 4 - 2
0.1
1
10
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Total Capacitance
100
fT, CURRENT GAIN-BANDWIDTH PRODUCT (MHz)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
CAPACITANCE (pF)
NEW PRODUCT
600
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250
200
150
100
VCE = -10V
f = 100MHz
50
0
0
10
20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 8 Typical Gain-Bandwidth Product
vs. Collector Current
DPLS160
© Diodes Incorporated
Ordering Information
(Note 5)
Device
DPLS160-7
5.
Shipping
3000/Tape & Reel
For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
PK1
Date Code Key
Year
Code
2008
V
Month
Code
2009
W
Jan
1
Feb
2
YM
NEW PRODUCT
Notes:
Packaging
SOT-23
PK1 = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: U = 2007
M = Month ex: 9 = September
2010
X
Mar
3
Apr
4
2011
Y
May
5
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
Sep
9
2014
B
Oct
O
2015
C
Nov
N
Dec
D
Package Outline Dimensions
A
B C
G
H
K
M
J
D
F
L
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
F
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0°
8°
α
All Dimensions in mm
Suggested Pad Layout
Y
Z
C
X
Dimensions Value (in mm)
Z
2.9
X
0.8
Y
0.9
C
2.0
E
1.35
E
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
DS31389 Rev. 4 - 2
4 of 4
www.diodes.com
DPLS160
© Diodes Incorporated
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