DMN2022UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V Features RDS(ON) max ID max TA = +25°C 22mΩ @ VGS = 4.5V 7.9A 26mΩ @ VGS = 2.5V 7.2A 36mΩ @ VGS = 1.8V 6.1A 50mΩ @ VGS = 1.5V 5.2A 0.6mm profile – ideal for low profile applications 2 PCB footprint of 4mm Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Battery Management Application Power Management Functions DC-DC Converters Case: U-DFN2020-6 TYPE F Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.0065 grams (approximate) D U-DFN2020-6 TYPE F G ESD PROTECTED S Gate Protection Diode Top View Pin Out Bottom View Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMN2022UFDF-7 DMN2022UFDF-13 Notes: Marking NC NC Reel size (inches) 7 13 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. NC Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2022UFDF Datasheet number: DS36744 Rev. 1 - 2 Mar 3 YM Marking Information NC = Product Type Marking Code YM = Date Code Marking Y = Year (ex: A = 2013) M = Month (ex: 9 = September) 2013 A Apr 4 May 5 2014 B Jun 6 1 of 6 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D April 2014 © Diodes Incorporated DMN2022UFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<5s ID TA = +25°C Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V A IDM 9.4 7.5 40 IS 2 A IAS EAS 12 8 A mJ ID Pulsed Drain Current (10μs pulse, duty cycle = 1%) Continuous Source-Drain Diode Current Value 20 ±8 7.9 6.3 A A Thermal Characteristics Characteristic Symbol TA = +25°C TA = +70°C Steady state t<5s TA = +25°C TA = +70°C Steady state t<5s Steady state Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Value 0.66 0.42 188 135 2.03 1.31 60 43 8.3 -55 to +150 PD RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 ±10 V µA µA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.5 RDS (ON) — |Yfs| VSD — — 1.0 22 26 36 50 — 1.0 V Static Drain-Source On-Resistance — 15 18 24 35 18 0.7 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 4A VGS = 2.5V, ID = 4A VGS = 1.8V, ID = 4A VGS = 1.5V, ID = 4A VDS = 5V, ID = 12A VGS = 0V, IS = 5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr — — — — — — — — — — — — — —- 907 98 38 194 9.8 18 1.5 1.8 56 87 632 239 143 136 — — — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V Test Condition pF VDS = 10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1MHz nC VDS = 10V, ID = 6.5A ns VDS = 10V, VGS = 4.5V, RG = 6Ω, RL = 10Ω,ID = 1A ns nC IF = 4A, di/dt = 100A/μs IF = 4A, di/dt = 100A/μs 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN2022UFDF Datasheet number: DS36744 Rev. 1 - 2 2 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN2022UFDF 20 30 VGS = 8.0V VDS = 5.0V 16 VGS = 4.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 3.0V 20 VGS = 2.5V VGS = 2.0V 15 10 VGS = 1.5V 12 8 TA = 150°C TA = 125°C TA = 85°C 4 5 T A = 25°C T A = -55°C 0 0.5 1.0 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.05 0.04 0.03 VGS = 1.8V VGS = 2.5V 0.02 VGS = 4.5V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.6 VGS = 2.5V ID = 5.5A 1.4 VGS = 4.5V ID = 6.5A 1.2 1.0 0.8 0.6 -50 0 2.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 5 On-Resistance Variation with Temperature DMN2022UFDF Datasheet number: DS36744 Rev. 1 - 2 3 of 6 www.diodes.com 0 0.5 1.0 1.5 2.0 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2.5 0.06 VGS = 4.5V 0.05 0.04 TA = 150°C 0.03 TA = 125°C T A = 85°C 0.02 T A = 25°C TA = -55°C 0.01 0 0 4 8 12 16 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.06 0.05 0.04 VGS = 2.5V ID = 5.5A 0.03 0.02 VGS = 4.5V ID = 6.5A 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature April 2014 © Diodes Incorporated DMN2022UFDF 20 1.2 16 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 0.8 ID = 1mA 0.6 ID = 250µA 0.4 12 T A = 25°C 8 4 0.2 0 -50 0 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 Gate Threshold Variation vs. Ambient Temperature 8 VGS GATE THRESHOLD VOLTAGE (V) 10000 CT, JUNCTION CAPACITANCE (pF) 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current Ciss 1000 Coss 100 Crss 10 7 VDS = 10V ID = 6.5A 6 5 4 3 2 1 f = 1MHz 1 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance r(t), TRANSIENT THERMAL RESISTANCE 1 20 0 0 2 4 6 8 10 12 14 16 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 18 20 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 72°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 DMN2022UFDF Datasheet number: DS36744 Rev. 1 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 11 Transient Thermal Resistance 4 of 6 www.diodes.com 10 100 1000 April 2014 © Diodes Incorporated DMN2022UFDF Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A 3 A 1 A e n a l P g n i t a e S D 3 D 3 E 2 D 2 E E L 2 e 1 Z b e X 4 Z ︵ U-DFN2020-6 Dim Min Max Typ A 0.57 0.63 0.60 A1 0 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D3 0.33 0.43 0.38 e 0.65 BSC e2 0.863 BSC E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E3 0.65 0.75 0.70 L 0.225 0.325 0.275 Z 0.20 BSC Z1 0.110 BSC All Dimensions in mm ︶ Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. 3 X Y X C Dimensions 4 Y 1 Y 2 Y 3 Y C X X1 X2 X3 Y Y1 Y2 Y3 Y4 1 X Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 1 n i P 2 X DMN2022UFDF Datasheet number: DS36744 Rev. 1 - 2 5 of 6 www.diodes.com April 2014 © Diodes Incorporated DMN2022UFDF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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