Diodes DMN2022UFDF Low gate threshold voltage Datasheet

DMN2022UFDF
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
Features
RDS(ON) max
ID max
TA = +25°C
22mΩ @ VGS = 4.5V
7.9A
26mΩ @ VGS = 2.5V
7.2A
36mΩ @ VGS = 1.8V
6.1A
50mΩ @ VGS = 1.5V
5.2A
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0.6mm profile – ideal for low profile applications
2
PCB footprint of 4mm
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.




Applications


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Battery Management Application
Power Management Functions
DC-DC Converters
Case: U-DFN2020-6 TYPE F
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.0065 grams (approximate)
D
U-DFN2020-6
TYPE F
G
ESD PROTECTED
S
Gate Protection
Diode
Top View
Pin Out
Bottom View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number
DMN2022UFDF-7
DMN2022UFDF-13
Notes:
Marking
NC
NC
Reel size (inches)
7
13
Quantity per reel
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
NC
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMN2022UFDF
Datasheet number: DS36744 Rev. 1 - 2
Mar
3
YM
Marking Information
NC = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 6
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2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
April 2014
© Diodes Incorporated
DMN2022UFDF
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Steady
State
t<5s
ID
TA = +25°C
Avalanche Current (Note 7) L = 0.1mH
Avalanche Energy (Note 7) L = 0.1mH
Units
V
V
A
IDM
9.4
7.5
40
IS
2
A
IAS
EAS
12
8
A
mJ
ID
Pulsed Drain Current (10μs pulse, duty cycle = 1%)
Continuous Source-Drain Diode Current
Value
20
±8
7.9
6.3
A
A
Thermal Characteristics
Characteristic
Symbol
TA = +25°C
TA = +70°C
Steady state
t<5s
TA = +25°C
TA = +70°C
Steady state
t<5s
Steady state
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Value
0.66
0.42
188
135
2.03
1.31
60
43
8.3
-55 to +150
PD
RθJA
PD
RθJA
RθJC
TJ, TSTG
Units
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
—
—
—
—
—
—
1
±10
V
µA
µA
VGS = 0V, ID = 250μA
VDS = 20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.5
RDS (ON)
—
|Yfs|
VSD
—
—
1.0
22
26
36
50
—
1.0
V
Static Drain-Source On-Resistance
—
15
18
24
35
18
0.7
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 4A
VGS = 2.5V, ID = 4A
VGS = 1.8V, ID = 4A
VGS = 1.5V, ID = 4A
VDS = 5V, ID = 12A
VGS = 0V, IS = 5A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr
—
—
—
—
—
—
—
—
—
—
—
—
—
—-
907
98
38
194
9.8
18
1.5
1.8
56
87
632
239
143
136
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
mΩ
S
V
Test Condition
pF
VDS = 10V, VGS = 0V,
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1MHz
nC
VDS = 10V, ID = 6.5A
ns
VDS = 10V, VGS = 4.5V,
RG = 6Ω, RL = 10Ω,ID = 1A
ns
nC
IF = 4A, di/dt = 100A/μs
IF = 4A, di/dt = 100A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2022UFDF
Datasheet number: DS36744 Rev. 1 - 2
2 of 6
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April 2014
© Diodes Incorporated
DMN2022UFDF
20
30
VGS = 8.0V
VDS = 5.0V
16
VGS = 4.5V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25
VGS = 3.0V
20
VGS = 2.5V
VGS = 2.0V
15
10
VGS = 1.5V
12
8
TA = 150°C
TA = 125°C
TA = 85°C
4
5
T A = 25°C
T A = -55°C
0
0.5
1.0
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.05
0.04
0.03
VGS = 1.8V
VGS = 2.5V
0.02
VGS = 4.5V
0.01
0
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.6
VGS = 2.5V
ID = 5.5A
1.4
VGS = 4.5V
ID = 6.5A
1.2
1.0
0.8
0.6
-50
0
2.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
DMN2022UFDF
Datasheet number: DS36744 Rev. 1 - 2
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0
0.5
1.0
1.5
2.0
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
2.5
0.06
VGS = 4.5V
0.05
0.04
TA = 150°C
0.03
TA = 125°C
T A = 85°C
0.02
T A = 25°C
TA = -55°C
0.01
0
0
4
8
12
16
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
20
0.06
0.05
0.04
VGS = 2.5V
ID = 5.5A
0.03
0.02
VGS = 4.5V
ID = 6.5A
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
April 2014
© Diodes Incorporated
DMN2022UFDF
20
1.2
16
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
1.4
1.0
0.8
ID = 1mA
0.6
ID = 250µA
0.4
12
T A = 25°C
8
4
0.2
0
-50
0
0
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
8
VGS GATE THRESHOLD VOLTAGE (V)
10000
CT, JUNCTION CAPACITANCE (pF)
0.2
0.4
0.6
0.8
1.0
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
Ciss
1000
Coss
100
Crss
10
7
VDS = 10V
ID = 6.5A
6
5
4
3
2
1
f = 1MHz
1
0
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
r(t), TRANSIENT THERMAL RESISTANCE
1
20
0
0
2
4
6
8
10 12 14 16
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
18
20
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 72°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
DMN2022UFDF
Datasheet number: DS36744 Rev. 1 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 11 Transient Thermal Resistance
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10
100
1000
April 2014
© Diodes Incorporated
DMN2022UFDF
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
3
A
1
A
e
n
a
l
P
g
n
i
t
a
e
S
D
3
D
3
E
2
D
2
E
E
L
2
e
1
Z
b
e
X
4
Z
︵
U-DFN2020-6
Dim Min Max
Typ
A
0.57 0.63
0.60
A1
0
0.05
0.03
A3
0.15
b
0.25 0.35
0.30
D
1.95 2.05
2.00
D2 0.85 1.05
0.95
D3 0.33 0.43
0.38
e
0.65 BSC
e2
0.863 BSC
E
1.95 2.05
2.00
E2 1.05 1.25
1.15
E3 0.65 0.75
0.70
L 0.225 0.325 0.275
Z
0.20 BSC
Z1
0.110 BSC
All Dimensions in mm
︶
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
3
X
Y
X
C
Dimensions
4
Y
1
Y
2
Y
3
Y
C
X
X1
X2
X3
Y
Y1
Y2
Y3
Y4
1
X
Value
(in mm)
0.650
0.400
0.480
0.950
1.700
0.425
0.800
1.150
1.450
2.300
1
n
i
P
2
X
DMN2022UFDF
Datasheet number: DS36744 Rev. 1 - 2
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April 2014
© Diodes Incorporated
DMN2022UFDF
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Copyright © 2014, Diodes Incorporated
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DMN2022UFDF
Datasheet number: DS36744 Rev. 1 - 2
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April 2014
© Diodes Incorporated
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