NVMFS5A140PLZ Advance Information Power MOSFET −40 V, 4.2 mΩ, −140 A, Single P-Channel www.onsemi.com Features • Small Footprint (5 × 6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • NVMFS5A140PLZWF : Wettable Flank Option for Enhanced Optical Inspection • AEC-Q101 Qualified and PPAP Capable • Pb-Free and RoHS compliance VDSS −40 V RDS(on) Max 4.2 mΩ @ −10 V ID Max 7.2 mΩ @ −4.5 V −140 A ELECTRICAL CONNECTION SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS at Tj= 25°C unless otherwise noted D (5) (Notes 1, 2, 3, 4) Parameter Drain to Source Voltage Gate to Source Voltage Continuous Drain TC = 25°C Current RθJC Steady (Notes 2, 4) State Power Dissipation TC = 25°C RθJC (Note 2) Continuous Drain TA = 25°C Current RθJA Steady (Notes 2, 3, 4) State Power Dissipation TA = 25°C RθJA (Notes 2, 3) PW ≤ 10 μs, Pulsed Drain Current duty cycle ≤ 1% Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain to Source Avalanche Energy (L = 1.0 mH, IL(pk) = −29 A) Lead Temperature for Soldering Purposes (1/8" from case for 10 s) Symbol VDSS VGS Value −40 ±20 Unit V V ID −140 A PD 200 W ID −20 A PD 3.8 W IDP −560 A −55 to +175 °C −140 A EAS 420 mJ TL 260 °C Junction to Case Steady State Junction to Ambient Steady State (Note 3) G (4) S (1,2,3) P-Channel MOSFET TJ, Tstg IS THERMAL RESISTANCE MAXIMUM RATINGS Parameter 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain Symbol Value RθJC RθJA MARKING DIAGRAM D DFN5 (SO-8FL) S S S G D XXXXXX AYWZZ D D XXXXXX= Specific Device Code 5A140L(NVMFS5A140PLZ) 140LWF(NVMFS5A140PLZWF) A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability Unit 0.75 39 °C/W ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Note 2 : The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2 Note 3 : Surface mounted on FR4 board using a 650 mm , 2 oz. Cu pad. Note 4 : Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. This document contains information on a new product. Specifications and information herein are subject to change without notice. © Semiconductor Components Industries, LLC, 2016 December 2016 - Rev. P2 1 Publication Order Number : NVMFS5A140PLZ /D NVMFS5A140PLZ ELECTRICAL CHARACTERISTICS at TJ = 25°C unless otherwise specified (Note 5) Parameter Symbol Conditions Value min typ Unit max OFF CHARACTERISTICS Drain to Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −1 mA Zero-Gate Voltage Drain Current IDSS VGS = 0 V VDS = −40 V Gate to Source Leakage Current IGSS −40 V TJ = 25°C TJ = 100°C VGS = ±16 V, VDS = 0 V −1.0 μA −100 μA ±10 μA ON CHARACTERISTICS (Note 6) Gate Threshold Voltage VGS(th) Drain to Source On Resistance RDS(on) Forward Transconductance gFS VDS = −10 V, ID = −1 mA VGS = −10 V ID = −50 A VGS = −4.5 V ID = −50 A VDS = −10 V, ID = −50 A −1.2 −2.6 V 3.2 4.2 mΩ 5.0 7.2 mΩ 125 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Ciss Coss Crss Qg(tot) Qgs Qgd VGS = 0 V, f = 1 MHz, VDS = −20 V VGS = −10 V, VDS = −20 V, ID = −50 A 7,400 1,030 pF 720 136 26 nC 31 SWITCHING CHARACTERISTICS (Note 7) Turn-ON Delay Time td(on) Rise Time tr VGS = −10 V, VDS = −20 V, 860 Turn-Off Delay Time td(off) ID = −50 A, RG = 50 Ω 540 Fall Time tf 50 ns 740 DRAIN SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = −50 A Reverse Recovery Time trr Reverse Recovery Charge Qrr VGS = 0 V, di/dt = 100 A/μs, IS = −50 A −0.83 −1.5 V 108 ns 236 nC Note 5 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Note 6 : Pulse Test: pulse width ≤ 300 μs, duty cycle ≤ 2%. Note 7 : Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5A140PLZ www.onsemi.com 3 NVMFS5A140PLZ www.onsemi.com 4 NVMFS5A140PLZ PACKAGE DIMENSIONS unit : mm DFN5 5x6, 1.27P (SO-8FL) CASE 488AA ISSUE M 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 1 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M E c A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 c DETAIL A e/2 e L 1 4 K PIN 5 (EXPOSED PAD) RECOMMENDED SOLDERING FOOTPRINT* 2X E2 G L1 M 0.495 4.560 2X 1.530 D2 3.200 BOTTOM VIEW 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 2X 0.905 1 0.965 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 5 MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.30 5.15 4.70 4.90 5.10 3.80 4.00 4.20 6.15 6.00 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0 12 NVMFS5A140PLZ ORDERING INFORMATION Device Marking NVMFS5A140PLZT1G 5A140L NVMFS5A140PLZWFT1G 140LWF NVMFS5A140PLZT3G 5A140L NVMFS5A140PLZWFT3G 140LWF Package DFN5 5x6, 1.27P (SO-8FL) (Pb-Free) DFN5 5x6, 1.27P (SO-8FL) (Pb-Free, Wettable Flanks) DFN5 5x6, 1.27P (SO-8FL) (Pb-Free) DFN5 5x6, 1.27P (SO-8FL) (Pb-Free, Wettable Flanks) Shipping (Qty / Packing) 1,500 / Tape & Reel 5,000 / Tape & Reel † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF Note on usage : Since the NVMFS5A140PLZ is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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