NSC LMH6533SPX Four - channel laser diode driver with dual output, lvds interface and hfm oscillator Datasheet

LMH6533
Four –Channel Laser Diode Driver with Dual Output,
LVDS Interface and HFM Oscillator
General Description
Features
The LMH™ 6533 is a laser diode driver for use in combina-
n Fast switching: Rise and fall times < 0.8 ns
n Low voltage differential signaling (LVDS) channels
enable interface for the fast switching lines
n Low output current noise: < 0.5nA/
n Dual output: Selectable by SELB pin (active HIGH)
n Four independent current channels
— Gain of 300, 300 mA write channel
— Gain of 150, 150 mA low-noise read channel
— Two gain of 150, 150 mA write channels
— 500 mA minimum combined output current
n Integrated AC Coupled HFM Oscillator
— Selectable frequency and amplitude setting by
external resistors
— 200 MHz to 600 MHz frequency range
— Amplitude to 100 mA peak-to-peak modulation
n Complete shutdown by ENABLE pin
n 5V single-supply operation
n Logic inputs TTL and CMOS compatible
n Space saving Leadless Leadframe Package LLP ® -28
tion DVD/CD recordable and rewritable systems. The part
contains two high-current outputs for reading and writing the
DVD (650 nm) and CD (780 nm) lasers. Functionality includes read, write and erase through four separate switched
current channels. The channel currents are summed together at the selected output to generate multilevel waveforms for reading, writing and erasing of optical discs. The
LVDS interface delivers DVD write speeds of 12x and higher
while minimizing noise and crosstalk. The LMH6533 is optimized for both speed and power consumption to meet the
demands of next generation systems. The part features a
150 mA read channel plus one 300 mA and two 150 mA write
channels, which can be summed to allow a total output
current of 500 mA or greater. The channel currents are set
through four independent current inputs.
The part is manufactured in National Semiconductor’s
VIP10™ process, which features bonded wafer technology
and trench isolation for very high switching speeds at low
power levels. An on-board High-Frequency Modulator (HFM)
oscillator helps reduce low-frequency noise of the laser and
is enabled with the ENOSC pin. The fully differential oscillator circuit minimizes supply line noise, easing FCC approval
of the overall system. The SELB pin (active HIGH) selects
the output channel and oscillator settings. External resistors
determine oscillator frequency and amplitude for each setting. The write and erase channels can be switched on and
off through dedicated LVDS interface pins.
Applications
n Combination DVD/CD recordable and rewritable drives
n DVD camcorders
n DVD video recorders
Block Diagram
20027701
LMH™ is a trademark of National Semiconductor Corporation.
VIP10™ is a trademark of National Semiconductor Corporation.
LLP ® is a registered trademark of National Semiconductor.
© 2004 National Semiconductor Corporation
DS200277
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LMH6533 Four –Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM
Oscillator
May 2004
LMH6533
Absolute Maximum Ratings (Note 1)
Operating Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Operating Temp. Range (TA)
(Note 8)
ESD Tolerance
Human Body Model
200V (Note 3)
+
−
Supply Voltage (V – V )
5.5V
Differential Input Voltage
± 5.5V
Output Short Circuit to Ground
(Note 4)
Input Common Mode Voltage
Storage Temperature Range
Junction Temperature (Note 5)
−40˚C ≤ TA ≤ 85˚C
Thermal Resistance
(Note 5), (Note 8)
2KV (Note 2)
Machine Model
4.5V ≤ VS ≥ 5.5V
Supply Voltage (V+ - V−)
LLP Package
θJC
3˚C/W
θJA (no heatsink)
42˚C/W
θJA (with heatsink) see (Note 9)
Continuous
V– to V+
1.5 mA (max)
IIN2
1.0 mA (max)
RFREQ
−65˚C to +150˚C
+150˚C
30.8˚C/W
IINR/3/4
1000Ω (min)
RAMP
300Ω
FOSC
100-600 MHz
AOSC
10-100 mAPP
+5V DC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, RL = 10Ω. Boldface limits apply at the temperature extremes.
(Note 8)
Symbol
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
Max
(Note 7)
Units
LVDS
VI
Input Voltage Range
|VGPD| < 50 mV
(Note 7), (Note 9), (Note 11)
825
1550
1575
mV
VIDTH
Input Diff. Threshold
VGPD < 50 mV
(Note 7), (Note 9), (Note 11)
–100
0
100
mV
VHYST
Input Diff. Hysteresis
VIDTHH – VIDTH1
(Note 7), (Note 9), (Note 11)
25
0
RIN
Input Diff. Impedance
(Note 7), (Note 9),(Note 11)
80
104
120
Ω
IIN
Input Current
Excluding RIN Current VCM = 1.25V
5
50
µA
mV
Current Channels
RIN
Input Resistance all Channels
RIN to Ground
425
556
675
Ω
IOS
Current Offset
All Channels Off (Note 12)
–7.5
4.75
7.5
mA
AIW
Current Gain
Channel 2 (Note 13)
270
303
330
A/A
AIR
Current Gain
Channels 3,4 and Read (Note 13)
135
152
165
A/A
ILIN-R,3,4
Output Current Linearity
500 µA < LIN < 1000 µA; RLOAD =
10Ω Channels Read, 3 and 4
–3.5
2.5
+3.5
%
ILIN-2
Output Current Linearity
500 µA < LIN < 1000 µA; RLOAD =
10Ω Channels 2
–8
5
+8
%
IOUTW
Output Current
Channel 2 (Note 12) @ 1mA Input
Current
250
263
mA
IOUTR,3,4
Output Current
Channel 3, 4 and Read (Note 12) @
1 mA Input Current
135
150
mA
All Channels (Note 14); RLOAD = 5Ω
500
IOUTTOTAL Total Output Current
mA
VTLO
TTL Low Voltage
ENR, ENOSC Input (H to L)
1.51
0.8
VELO
Enable Low Voltage
Enable Input (H to L)
2.41
0.8
VTHI
TTL High Voltage
ENR, ENOSC Inputs (L to H )
2.0
VEHI
Enable High Voltage
Enable Input (L to H)
2.8
ISPD
Supply Current, Power Down
Enable = Low (Note 12)
0.003
0.5
mA
ISr1
Supply Current, Read Mode,
Oscillator Disabled
ENOSC = Low; (Note 12)
I2 = I3 = I4 = IR = 125 µA
98.5
120
mA
ISr2
Supply Current, Read Mode,
Oscillator Enabled
ENOSC = High; (Note 12)
I2 = I3 = I4 = IR = 125 µA
98.5
120
mA
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2
1.54
V
V
V
2.4
V
(Continued)
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, RL = 10Ω. Boldface limits apply at the temperature extremes.
(Note 8)
Symbol
Parameter
Conditions
ISwr
Supply Current, Write Mode
EN2 = EN3 = EN4 = High; (Note 12)
I2 = I3 = I4 = IR = 125 µA
IS
Supply Current
All Channels Disable, No Input
Current. SELB = 0; RAA, RAB, RFA,
RFB = ∞
Min
(Note 7)
Typ
(Note 6)
Max
(Note 7)
Units
182.5
210
mA
45
mA
+5V AC Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TJ = 25˚C, RL = 10Ω. Boldface limits apply at the temperature extremes.
(Note 8)
Symbol
Parameter
Conditions
Min
(Note 7)
Typ
(Note 6)
Max
(Note 7)
Units
tr
Write Rise Time
IOUT = 40 mA (Read) + 40 mA (10%
to 90%) RLOAD = 5Ω
0.50
ns
tf
Write Fall Time
IOUT = 40 mA (Read) + 40 mA (90%
to 10%) RLOAD = 5Ω
0.76
ns
tr
Write Rise Time
IOUT = 100 mA (Read) + 100 mA
(10% to 90%) RLOAD = 5Ω
0.65
ns
tf
Write Fall Time
IOUT = 100 mA (Read) + 100 mA
(90% to 10%) RLOAD = 5Ω
0.75
ns
tr
Write Rise Time
IOUT = 150 mA (Read) + 150 mA
(10% to 90%) RLOAD = 5Ω
0.78
ns
tf
Write Fall Time
IOUT = 150 mA (Read) + 150 mA
(90% to 10%) RLOAD = 5Ω
0.77
ns
OS
Output Current Overshoot
IOUT = 40 mA (Read) + 40 mA
16
%
IN0
Output Current Noise
IOUT = 40 mA; RLOAD = 50Ω;
f = 10 MHz; ENOSC = Low
0.47
nA/
tON
IOUT ON Prop. Delay
Switched on EN2 and EN2B
0.45
tOFF
IOUT OFF Prop. Delay
Switched on EN2 and EN2B
0.40
ns
ns
tdisr
Disable Time, Read Channel
Switch on ENR
1.1
ns
tenr
Enable Time, Read Channel
Switch on ENR
1.1
ns
tdis
Disable Time, (Shutdown)
3
µs
ten
Enable Time, (Shutdown)
3
µs
BWC
Channel Bandwidth, –3 dB
IOUT = 50 mA, All Channels
fOSC
Oscillator Frequency
RF = 3 kΩ
Range 200 MHz to 600 MHz
TDO
Disable Time Oscillator
5.2
ns
TEO
Enable Time Oscillator
5.4
ns
2.5
270
330
MHz
390
MHz
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: For testing purposes, ESD was applied using ‘Human body model’; 1.5 kΩ in series with 100 pF
Note 3: Machine Model, 0Ω in series with 200 pF.
Note 4: Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the
maximum allowed junction temperature of 150˚C
Note 5: The maximum power dissipation is a function of TJ(MAX, θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD =
(TJ(MAX) -TA) /θJA. All numbers apply for packages soldered directly onto a PC board.
Note 6: Typical values represent the most likely parametric norm.
Note 7: All limits are guaranteed by testing or statistical analysis.
Note 8: Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very limited self-heating of
the device such that TJ = TA. There is no guarantee of parametric performance as indicated in the electrical tables under conditions of internal self-heating where
TJ > TA. See Applications section for information on temperature de-rating of this device.
Note 9: VGPD = ground potential difference voltage between driver and receiver
3
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LMH6533
+5V DC Electrical Characteristics
LMH6533
Note 10: This figure is taken from a thermal modeling result. The test board is a 4 layer FR-4 board measuring 101 mm x 101 mm x 1.6 mm with a 3 x 3 array of
thermal vias. The ground plane on the board is 50 mm x 50 mm. Ambient temperature in simulation is 22˚C, still air. Power dissipation is 1W.
Note 11: Reference IEEE Reduced Range Link (RRL) specifications.
Note 12: Positive current corresponds to current flowing into the device.
Note 13: Input currents are set to 0.3 mA
Note 14: Total input current is 4.4 mA (all 4 channels equal) and output currents are summed together (see typical performance characteristics).
Connection Diagram
28-Pin LLP
20027702
Top View
Ordering Information
Package
28-Pin LLP
Part Number
Package Marking
LMH6533SP NOPB
LMH6533SP
LMH6533SPX NOPB
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Transport Media
NSC Drawing
1k Units Tape and Reel
SPA28A
4.5k Units Tape and Reel
4
LMH6533
Pin Description
Pin #
Description
Remark
1
Laser driver output channel A
2
Internal Oscillator Enable pin
Oscillator activated if pin is high
3
Temp Sensing Diode
See application note on using this pin
4
Read Channel Enable pin
Read Channel Enabled if pin is high
5
Chip Enable pin
Chip Enabled if pin is high
6
Supply Voltage A
7
Ground Connection A
8
Read Channel current setting
9
Channel 2 current setting
10
Channel 3 current setting
11
Channel 4 current setting
12
Oscillator Frequency setting Channel A
Set by external resistor to ground
13
Oscillator Frequency setting Channel B
Set by external resistor to ground
14
Oscillator Amplitude setting Channel A
Set by external resistor to ground
15
Oscillator Amplitude setting Channel B
Set by external resistor to ground
16
Channel select B
Channel B selected if pin is high
17
LVDS input Channel 2B
Channel 2 active if logical input is low
18
LVDS input Channel 2
Channel 2 active if logical input is high
19
LVDS input Channel 3B
Channel 3 active if logical input is low
20
LVDS input Channel 3
Channel 3 active if logical input is high
21
LVDS input Channel 4B
Channel 4 active if logical input is low
22
LVDS input Channel 4
Channel 4 active if logical input is high
23
NC
24
Supply Voltage
25
Supply Voltage
26
Supply Voltage
27
Laser driver output channel B
28
Ground Connection B
Truth Tables
IOUT CONTROL
Enable
ENR
EN2
EN3
EN4
0
X
X
X
X
IOUT
OFF
1
0
0
0
0
OFF
1
1
0
0
0
AR*IINR
1
1
1
0
0
AR*IINR+A2*IIN2
1
1
0
1
0
AR*IINR+A3*IIN3
1
1
0
0
1
AR*IINR+A4*IIN4
OSCILLATOR CONTROL
Enable
ENOSC
ENR
EN2
EN3
EN4
0
x
x
x
x
x
OFF
1
0
x
x
x
x
OFF
1
1
x
x
x
x
on
5
Oscillator
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LMH6533
Waveforms
20027703
Functional Timing Diagram
20027704
Enable Timing
20027705
Read Timing
20027706
Write Timing
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6
LMH6533
Waveforms
(Continued)
20027707
Oscillator Timing
7
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LMH6533
Detailed Block Diagram
20027708
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8
LMH6533
Application Schematic
20027709
9
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LMH6533
Typical Performance Characteristics
At TJ = 25˚C; V+ = +5V; V− = −50V; Unless otherwise speci-
fied.
Oscillator Frequency vs. RF
Oscillator Amplitude vs. RA
20027711
20027710
Headroom & Output Current vs. Total Input Current
Pulse Response
20027719
20027720
Noise vs. Frequency
20027721
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10
inches (millimeters) unless otherwise noted
28-Pin LLP
NS Package Number SPA28A
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LMH6533 Four –Channel Laser Diode Driver with Dual Output, LVDS Interface and HFM
Oscillator
Physical Dimensions
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