LL4148/LL4448/LL914B 500mW High Speed SMD Switching Diode Small Signal Diode Mini-MELF (LL34) HERMETICALLY SEALED GLASS Features Fast switching device(T rr<4.0nS) Surface device type mounting Moisture sensitivity level 1 Matte Tin (Sn) Terminal Finish Pb free version and RoHS compliant All External Surfaces are Corrosion Resistant and Leads are Readily Solderable Dimensions Mechanical Data Unit (mm) Unit (inch) Min Max Min Max Case : Mini-MELF Package (JEDEC DO-213AC) A 3.30 3.70 0.130 0.146 High temperature soldering guaranteed : 270°C/10s B 1.40 1.60 0.055 0.063 Polarity : Indicated by cathode band C 0.25 0.40 0.010 0.016 Weight : approx. 31 mg D 1.25 1.40 0.049 0.055 Ordering Information Suggested PAD Layout Package Part No. Packing LL34 LL4148 L0 10K / 13" Reel LL34 LL4448 L0 10K / 13" Reel LL34 LL914B L0 10K / 13" Reel LL34 LL4148 L1 2.5K / 7" Reel LL34 LL4448 L1 2.5K / 7" Reel LL34 LL914B L1 2.5K / 7" Reel 1.25 0.049 2.00 2.50 0.079 0.098 5.00 0.197 Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Maximum Ratings Type Number Power Dissipation Symbol Value Units PD 500 mW V VRRM 100 Reverse Voltage VR 75 V Peak Forward Surge Current (Note 1) tp=1us IFSM 2 A IFM 450 mA IF(AV) 150 mA Repetitive Peak Reverse Voltage Non-Repetitive Peak Forward Current Mean Forward Current Forward Continuous Current Repetitive peak Forward Current Thermal Resistance (Junction to Ambient) (Note 2) Junction and Storage Temperature Range IF 300 mA IFRM 500 mA RθJA 300 °C/W TJ, TSTG -65 to + 200 °C Notes:1. Test Condition : 8.3ms Single half Sine-Wave Superimposed on Rated Load (JEDEC Method) Notes:2. Valid provided that electrodes are kept at ambient temperature Version : G12 LL4148/LL4448/LL914B 500mW High Speed SMD Switching Diode Small Signal Diode Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Electrical Characteristics Type Number Symbol IR=100uA Reverse Breakdown Voltage Min V(BR) IR=5uA Max Units 100 V 75 Forward Voltage LL4448, LL914B IF=5.0mA LL4148 IF=50.0mA LL4448, LL914B IF=100.0mA V 1.0 25 nA 5.0 μA CJ 4.0 pF Trr 4.0 ns IR VR=75V VR=0, f=1.0MHz Junction Capacitance 0.72 1.0 VR=20V Reverse Leakage Current 0.62 VF Reverse Recovery Time (Note 3) Notes:3. Reverse Recovery Test Conditions: I F=IR=10mA, RL=100Ω, IRR=1mA Tape & Reel specification TSC label Carieer Tape Any Additional Label (If Required) P0 d P1 T E A F C Symbol Dimension(mm) Carrier width A 1.83 ±0.10 Carrier length B 3.73 ±0.10 Carrier depth C 1.80 ±0.10 Sprocket hole d 1.50 ± 0.10 Item Top Cover Tape W B Reel outside diameter D 178 ± 1 330 ± 1 Reel inner diameter D1 55 Min 100Min Feed hole width D2 13.0 ± 0.20 Sprocke hole position E 1.75 ±0.10 Punch hole position F 3.50 ±0.05 Sprocke hole pitch P0 4.00 ±0.10 Embossment center P1 2.00 ±0.05 Overall tape thickness T 0.23±0.005 Tape width W 8.00 ±0.30 Reel width W1 14.4max W1 D D2 D1 Direction of Feed Version : G12 LL4148/LL4448/LL914B 500mW High Speed SMD Switching Diode Small Signal Diode Rating and Sharacteristic Curves FIG 2 Reverse Current vs Reverse Voltage FIG 1 Typical Forward Characteristics 100 Ta=25°C Ta=25° Reverse Current (uA) Instantaneous Forward Current (mA) 1500 1200 900 600 10 1 0.1 300 0 0.001 0.01 0.01 0.1 1 10 100 1000 Instantaneous Forward Voltage (V) 0 20 40 60 80 100 120 Reverse Voltage (V) FIG 3 Admissible Power Dissipation Curve Power Dissipation (mW) 600 500 400 300 200 100 0 0 50 100 150 200 Ambient Temperature (°C) Reverse Voltage (V) FIG 5 Forward Resistance vs. Forward Current Dynamic Forward Resistance (Ώ) 10000 1000 100 10 1 0 0 0.1 1 10 100 Forward Current (mA) Version : G12