MSN0675D 60V(D-S) N-Channel Enhancement Mode Power MOS FET General Features ● VDS =60V,ID =75A RDS(ON) < 11.5mΩ @ VGS=10V (Typ:9.1mΩ) ● High density cell design for ultra low Rdson Lead Free ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● Power switching application ● Hard switched and high frequency circuits ● Uninterruptible Power Supply Marking and pin assignment PIN Configuration Schematic diagram TO-252-2L top view Package Marking and Ordering Information Device Marking MSN0675D Device Device Package Reel Size Tape width Quantity MSN0675D TO-252-2L - - - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Limit Unit Drain-Source Voltage Parameter VDS 60 V Gate-Source Voltage VGS ±20 V ID 75 A ID (100℃) 50 A Pulsed Drain Current IDM 300 A Maximum Power Dissipation PD 110 W 0.73 W/℃ EAS 450 mJ TJ,TSTG -55 To 175 ℃ RθJC 1.36 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSN0675D Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA 60 68 - V Zero Gate Voltage Drain Current IDSS VDS=60V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA 2 3 4 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=30A - 9.1 11.5 mΩ gFS VDS=25V,ID=30A 20 - - S - 2350 - PF - 237 - PF Crss - 205 - PF Turn-on Delay Time td(on) - 16 - nS Turn-on Rise Time tr VDD=30V,ID=2A,RL=15Ω - 10 - nS td(off) VGS=10V,RG=2.5Ω - 45 - nS - 12 - nS - 50 - nC - 12 - nC - 16 - nC - - 1.2 V - - 75 A TJ = 25°C, IF =75A - 28 nS (Note3) - 49 nC Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=25V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=30V,ID=30A, VGS=10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=30A trr Reverse Recovery Time Reverse Recovery Charge Qrr Forward Turn-On Time ton di/dt = 100A/μs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production 5. EAS condition : Tj=25℃,VDD=30V,VG=10V,L=0.5mH,Rg=25Ω MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSN0675D Test Circuit 1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSN0675D ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Figure 3 Rdson- Drain Current MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward http://www.moresemi.com 4/6 C Capacitance (pF) MSN0675D TJ-Junction Temperature(℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSN0675D TO-252 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 D2 4.830 TYP. 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 L1 L2 2.900 TYP. 1.400 L3 0.114 TYP. 1.700 0.055 1.600 TYP. 0.067 0.063 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V 5.350 TYP. MORE Semiconductor Company Limited 0.211 TYP. http://www.moresemi.com 6/6