NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N−Channel with ESD Protection, SC−75 and SC−89 http://onsemi.com Features • • • • • Low RDS(on) Improving System Efficiency Low Threshold Voltage, 1.5 V Rated ESD Protected Gate NV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable Pb−Free Packages are Available V(BR)DSS RDS(on) TYP ID MAX 0.127 W @ 4.5 V 0.170 W @ 2.5 V 20 V 915 mA 0.242 W @ 1.8 V 0.500 W @ 1.5 V 3 N−Channel MOSFET Applications • • • • Load/Power Switches Power Supply Converter Circuits Battery Management Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc. 1 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Units Drain−to−Source Voltage VDSS 20 V Gate−to−Source Voltage VGS ±6.0 V ID 915 mA Parameter Continuous Drain Current (Note 1) Steady State Power Dissipation (Note 1) Pulsed Drain Current TA = 25°C TA = 85°C Steady State tp =10 ms 3 1 SC−75 / SOT−416 CASE 463 2 STYLE 5 660 PD 300 mW IDM 1.3 A TJ, TSTG −55 to 150 °C Continuous Source Current (Body Diode) IS 280 mA Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C Operating Junction and Storage Temperature MARKING DIAGRAM & PIN ASSIGNMENT 3 SC−89 CASE 463C 2 1 3 Drain XX MG G 1 Gate 2 Source XX = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. SC−75, SC−89 THERMAL RESISTANCE RATINGS Parameter Symbol Junction−to−Ambient − Steady State (Note 1) SC−75 / SOT−416 SC−89 RqJA Value Units °C/W Gate 1 416 400 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). 3 Source Drain 2 Top View ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2014 December, 2014 − Rev. 7 1 Publication Order Number: NTA4153N/D NTA4153N, NTE4153N, NVA4153N, NVE4153N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 20 26 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 18.4 mV/°C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 16 V 100 nA Gate−to−Source Leakage Current IGSS VDS = 0 V, VGS = ±4.5 V ±1.0 mA VGS(TH) VGS = VDS, ID = 250 mA 1.1 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 0.45 0.76 −2.15 mV/°C VGS = 4.5 V, ID = 600 mA 127 230 VGS = 2.5 V, ID = 500 mA 170 275 VGS = 1.8 V, ID = 350 mA 242 700 VGS = 1.5 V, ID = 40 mA 500 950 VDS = 10 V, ID = 400 mA 1.4 S 110 pF mW CHARGES AND CAPACITANCES CISS Input Capacitance VGS = 0 V, f = 1.0 MHz, VDS = 16 V Output Capacitance COSS Reverse Transfer Capacitance CRSS 12 Total Gate Charge QG(TOT) 1.82 Threshold Gate Charge QG(TH) 0.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 0.42 td(ON) 3.7 VGS = 4.5 V, VDS = 10 V, ID = 0.2 A 16 nC 0.3 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDD = 10 V, ID = 0.2 A, RG = 10 W tf ns 4.4 25 7.6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD VGS = 0 V, IS = 200 mA TJ = 25°C 0.67 TJ = 125°C 0.54 1.1 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTA4153N, NTE4153N, NVA4153N, NVE4153N TYPICAL ELECTRICAL CHARACTERISTICS 1.2 1.2 VDS w 10 V 1.0 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 2.0 V VGS = 2.6 V to 5.0 V 0.8 1.8 V 0.6 0.4 1.6 V 0.2 1.0 0.8 0.6 0.4 0.2 TJ = −55°C 1.4 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0 4.0 0.4 1.6 Figure 2. Transfer Characteristics 0.3 0.2 TJ = 125°C TJ = 25°C 0.1 TJ = −55°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 2.0 0.4 VGS = 2.5 V 0.3 TJ = 125°C 0.2 TJ = 25°C TJ = −55°C 0.1 0 0 0.1 0.2 ID, DRAIN CURRENT (AMPS) 0.3 0.4 0.5 0.6 0.7 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Temperature Figure 3. On−Resistance vs. Drain Current and Temperature 1.6 200 ID = 0.35 A VGS = 4.5 V TJ = 25°C VGS = 0 V C, CAPACITANCE (pF) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.2 Figure 1. On−Region Characteristics VGS = 4.5 V 1.4 0.8 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.4 0 0 0 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 TJ = 25°C TJ = 125°C 1.2 1.0 0.8 0.6 −50 160 CISS 120 80 COSS 40 −25 0 25 50 75 100 125 150 0 CRSS 0 TJ, JUNCTION TEMPERATURE (°C) 4 8 12 16 DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Capacitance Variation http://onsemi.com 3 20 NTA4153N, NTE4153N, NVA4153N, NVE4153N 0.6 5 QT IS, SOURCE CURRENT (AMPS) VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS 4 3 QGS 2 QGD ID = 0.2 A TA = 25°C 1 VGS = 0 V 0.5 0.4 0.3 TJ = 125°C 0.2 0.1 TJ = 25°C 0 0 0 0.4 0.8 1.2 1.6 QG, TOTAL GATE CHARGE (nC) 2.0 0 0.4 0.6 0.8 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 8. Diode Forward Voltage vs. Current Figure 7. Gate−to−Source Voltage vs. Total Gate Charge r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 0.2 1.0 D = 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1.0 10 100 1000 Figure 9. Normalized Thermal Response ORDERING INFORMATION Marking Package Shipping† NTA4153NT1 TR SC−75 / SOT−416 3000 / Tape & Reel NTA4153NT1G TR SC−75 / SOT−416 (Pb−Free) 3000 / Tape & Reel NTE4153NT1G TP SC−89 (Pb−Free) 3000 / Tape & Reel NVA4153NT1G VR SC−75 / SOT−416 (Pb−Free) 3000 / Tape & Reel NVE4153NT1G VP SC−89 (Pb−Free) 3000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 4 NTA4153N, NTE4153N, NVA4153N, NVE4153N PACKAGE DIMENSIONS SC−75/SOT−416 CASE 463 ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. −E− 2 3 b 3 PL 0.20 (0.008) e DIM A A1 b C D E e L HE −D− 1 M D HE C 0.20 (0.008) E STYLE 5: PIN 1. GATE 2. SOURCE 3. DRAIN A L MILLIMETERS MIN NOM MAX 0.70 0.80 0.90 0.00 0.05 0.10 0.15 0.20 0.30 0.10 0.15 0.25 1.55 1.60 1.65 0.70 0.80 0.90 1.00 BSC 0.10 0.15 0.20 1.50 1.60 1.70 A1 SOLDERING FOOTPRINT* 0.356 0.014 1.803 0.071 0.787 0.031 0.508 0.020 1.000 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES NOM MAX 0.031 0.035 0.002 0.004 0.008 0.012 0.006 0.010 0.063 0.067 0.031 0.035 0.04 BSC 0.004 0.006 0.008 0.061 0.063 0.065 MIN 0.027 0.000 0.006 0.004 0.059 0.027 NTA4153N, NTE4153N, NVA4153N, NVE4153N PACKAGE DIMENSIONS SC−89 CASE 463C−03 ISSUE C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 463C−01 OBSOLETE, NEW STANDARD 463C−02. A −X− 3 1 2 B −Y− S K DIM A B C D G H J K L M N S G 2 PL D 0.08 (0.003) M 3 PL X Y N M C J −T− MILLIMETERS MIN NOM MAX 1.50 1.60 1.70 0.75 0.85 0.95 0.60 0.70 0.80 0.23 0.28 0.33 0.50 BSC 0.53 REF 0.10 0.15 0.20 0.30 0.40 0.50 1.10 REF −−− −−− 10 _ −−− −−− 10 _ 1.50 1.60 1.70 INCHES NOM MAX 0.063 0.067 0.034 0.040 0.028 0.031 0.011 0.013 0.020 BSC 0.021 REF 0.004 0.006 0.008 0.012 0.016 0.020 0.043 REF −−− −−− 10 _ −−− −−− 10 _ 0.059 0.063 0.067 MIN 0.059 0.030 0.024 0.009 SEATING PLANE SOLDERING FOOTPRINT* 0.53 0.020 1.10 0.043 0.53 0.020 1.00 0.039 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTA4153N/D