Vishay J175-E3 P-channel jfet Datasheet

J/SST174/175/176/177 Series
Vishay Siliconix
P-Channel JFETs
J174
J175
J176
J177
SST174
SST175
SST176
SST177
PRODUCT SUMMARY
Part Number
VGS(off) (V)
rDS(on) Max (W)
ID(off) Typ (pA)
tON Typ (ns)
J/SST174
J/SST175
5 to 10
85
–10
25
3 to 6
125
–10
25
J/SST176
1 to 4
250
–10
25
J/SST177
0.8 to 2.25
300
–10
25
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D
D
Low On-Resistance: J174 <85 W
Fast Switching—tON: 25 ns
Low Leakage: –10 pA
Low Capacitance: 5 pF
Low Insertion Loss
Low Error Voltage
High-Speed Analog Circuit Performance
Negligible “Off-Error,” Excellent Accuracy
Good Frequency Response
Eliminates Additional Buffering
Analog Switches
Choppers
Sample-and-Hold
Normally “On” Switches
Current Limiters
DESCRIPTION
The J/SST174 series consists of p-channel analog switches
designed to provide low on-resistance and fast switching. This
series simplifies series-shunt switching applications when
combined with the Siliconix J/SST111 series.
The TO-226AA (TO-92) plastic package provides a low-cost
option, while the TO-236 (SOT-23) package provides
surface-mount capability. Both the J and SST series are
available in tape-and-reel for automated assembly (see
Packaging Information).
TO-226AA
(TO-92)
D
TO-236
(SOT-23)
1
D
G
3
2
S
S
1
G
2
3
Top View
Top View
J174
J175
J176
J177
SST174 (S4)*
SST175 (S5)*
SST176 (S6)*
SST177 (S7)*
*Marking Code for TO-236
For applications information see AN104.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
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9-1
J/SST174/175/176/177 Series
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V
Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . –55 to 150_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2.8 mW/_C above 25_C
SPECIFICATIONS FOR J/SST174 AND J/SST175 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST174
Parameter
Test Conditions
Typa
Min
V(BR)GSS
IG = 1 mA , VDS = 0 V
45
30
VGS(off)
VDS = –15 V, ID = –10 nA
IDSS
VDS = –15 V, VGS = 0 V
Symbol
Max
J/SST175
Min
Max
Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
IGSS
IG
ID(off)
VGS = 20 V, VDS = 0 V
TA = 125_C
0.01
VDG = –15 V, ID = –1 mA
0.01
–0.01
TA = 125_C
rDS(on)
VGS = 0 V, VDS = –0.1 V
Gate-Source Forward Voltage
VGS(F)
IG = –1 mA , VDS = 0 V
10
3
6
–20
–135
–7
–70
1
1
–1
–1
85
125
V
mA
5
VDS = –15 V, VGS = 10 V
Drain-Source On-Resistance
30
5
nA
–5
W
–0.7
V
4.5
mS
20
mS
Dynamic
Common-Source
Forward Transconductance
gfs
Common-Source
Output Conductance
gos
Drain-Source On-Resistance
VDS = –15 V, ID = –1 mA
f = 1 kHz
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
Common-Source Input Capacitance
Ciss
VDS = 0 V, VGS = 0 V, f = 1 MHz
20
85
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz
5
Equivalent Input Noise Voltage
en
VDG = –10 V, ID = –1 mA
f = 1 kHz
20
125
W
pF
nV⁄
√Hz
Switching
Turn-On Time
td(on)
tr
Turn-Off Time
td(off)
10
VGS(L) = 0 V, VGS(H) = 10 V
See Switching Circuit
tf
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
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9-2
15
ns
10
20
PSCIA
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
J/SST174/175/176/177 Series
Vishay Siliconix
SPECIFICATIONS FOR J/SST176 AND J/SST177 (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
J/SST176
Parameter
Test Conditions
Typa
Min
V(BR)GSS
IG = 1 mA , VDS = 0 V
45
30
VGS(off)
VDS = –15 V, ID = –10 nA
IDSS
VDS = –15 V, VGS = 0 V
Symbol
J/SST177
Max
Min
Max
1
4
0.8
2.25
–2
–35
–1.5
–20
Unit
Static
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Currentb
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
IGSS
IG
ID(off)
VGS = 20 V, VDS = 0 V
TA = 125_C
0.01
1
1
–1
–1
250
300
V
mA
5
VDG = –15 V, ID = –1 mA
0.01
VDS = –15 V, VGS = 10 V
–0.01
TA = 125_C
30
nA
–5
W
Drain-Source On-Resistance
rDS(on)
VGS = 0 V, VDS = –0.1 V
Gate-Source Forward Voltage
VGS(F)
IG = –1 mA , VDS = 0 V
–0.7
V
gfs
VDS = –15 V, ID = –1 mA
f = 1 kHz
4.5
mS
Dynamic
Common-Source
Forward Transconductance
Common-Source Output Conductance
Drain-Source On-Resistance
Common-Source Input Capacitance
gos
rds(on)
VGS = 0 V, ID = 0 mA , f = 1 kHz
mS
20
250
Ciss
VDS = 0 V, VGS = 0 V, f = 1 MHz
20
Common-Source
Reverse Transfer Capacitance
Crss
VDS = 0 V, VGS = 10 V
f = 1 MHz
5
Equivalent Input Noise Voltage
en
VDG = –10 V, ID = –1 mA
f = 1 kHz
20
300
W
pF
nV⁄
√Hz
Switching
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
10
VGS(L) = 0 V, VGS(H) = 10 V
See Switching Circuit
tf
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
15
ns
10
20
PSCIA
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9-3
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Forward Transconductance and Output Conductance
vs. Gate-Source Cutoff Voltage
On-Resistance and Drain Current
vs. Gate-Source Cutoff Voltage
–100
18
250
gfs and gos @ VDS = –15 V
VGS = 0 V, f = 1 kHz
–80
rDS
–60
120
–40
80
40
–20
rDS @ ID = –1 mA, VGS = 0 V
IDSS @ VDS = –15 V, VGS = 0 V
0
0
0
2
4
6
8
15
200
gfs
12
9
100
6
50
3
10
0
2
VGS(off) – Gate-Source Cutoff Voltage (V)
Output Characteristics
rDS(on) – Drain-Source On-Resistance ( Ω )
VGS = 0 V
I D – Drain Current (mA)
0.5 V
–15
1.0 V
–10
1.5 V
–5
2.0 V
0
TA = 25_C
200
VGS(off) = 1.5 V
150
3V
100
5V
50
0
–4
0
–8
–12
–16
–20
–1
–10
VDS – Drain-Source Voltage (V)
–100
ID – Drain Current (mA)
Output Characteristics
On-Resistance vs. Temperature
–2
300
ID = –1 mA
rDS changes X 0.7%/_C
VGS = 0 V
rDS(on) – Drain-Source On-Resistance ( Ω )
1.5 V
0.5 V
–1.6
I D – Drain Current (mA)
0
10
8
On-Resistance vs. Drain Current
250
–20
1.0 V
–1.2
2.0 V
–0.8
–0.4
VGS(off) = 3 V
0
0
–0.1
–0.2
–0.3
–0.4
VDS – Drain-Source Voltage (V)
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9-4
6
4
VGS(off) – Gate-Source Cutoff Voltage (V)
–25
VGS(off) = 3 V
150
gos
g os – Output Conductance ( mS)
160
gfs – Forward Transconductance (mS)
IDSS
IDSS – Saturation Drain Current (mA)
rDS(on) – Drain-Source On-Resistance ( Ω )
200
–0.5
240
180
VGS(off) = 1.5 V
3V
120
5V
60
0
–55
–35
–15
5
25
45
65
85
105
125
TA – Temperature (_C)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
J/SST174/175/176/177 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Turn-On Switching
Turn-Off Switching
20
50
tr approximately independent of ID
VDD = –10 V, RG = 220 W
VGS(H) = 10 V, VGS(L) = 0 V
tf VGS(off) = 1.5 V
40
16
30
tON @ ID = –5 mA
Switching Time (ns)
Switching Time (ns)
5V
tON @ ID = –10 mA
20
10
12
td(off) VGS(off) = 1.5 V
8
5V
4
tr @ ID = –5 mA
VDD = –10 V, VGS(H) = 10 V, VGS(L) = 0 V
0
0
0
1
2
3
4
5
0
–3
–6
VGS(off) – Gate-Source Cutoff Voltage (V)
–9
Capacitance vs. Gate-Source Voltage
VDS = 0 V
f = 1 MHz
ID = –1 mA
10 nA
24
–10 mA
I G – Gate Leakage
Capacitance (pF)
–15
Gate Leakage Current
100 nA
30
18
Ciss
12
Crss
6
TA = 125_C
1 nA
IGSS @ 125_C
100 pA
–10 mA
10 pA
TA = 25_C
1 pA
–1 mA
IGSS @ 25_C
0.1 pA
0
0
4
8
12
16
20
0
VGS – Gate-Source Voltage (V)
–10
–30
–20
–40
–50
VDG – Drain-Gate Voltage (V)
Transfer Characteristics
Noise Voltage vs. Frequency
–40
100
VGS(off) = 3 V
VDS = –15 V
ID = –0.1 mA
Hz
–32
–24
TA = –55_C
en – Noise Voltage nV /
I D – Drain Current (mA)
–12
ID – Drain Current (mA)
25_C
–16
–8
125_C
0
–1 mA
10
VDS = –10 V
1
0
1
2
3
VGS – Gate-Source Voltage (V)
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
4
5
10
100
1k
10 k
100 k
f – Frequency (Hz)
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9-5
J/SST174/175/176/177 Series
Vishay Siliconix
SWITCHING TIME TEST CIRCUIT
VDD
VGG
174
175
176
177
–10 V
–6 V
–6 V
–6 V
VGG
20 V
12 V
8V
5V
RL*
560 W
750 W
1800 W
5600 W
RG*
100 W
220 W
390 W
390 W
ID(on)
–15 mA
–7 mA
–3 mA
–1 mA
VDD
RL
1.2 kW
VGS(H)
VGS(L)
0.1 mF
RG
7.5 kW
*Non-inductive
INPUT PULSE
Rise Time < 1 ns
Fall Time < 1 ns
Pulse Width 100 ns
PRF 1 MHz
SAMPLING SCOPE
51 W
1.2 kW
Rise Time 0.4 ns
Input Resistance 10 MW
Input Capacitance 1.5 pF
Sampling
Scope
51 W
51 W
See Typical Characteristics curves for changes.
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9-6
Document Number: 70257
S-04030—Rev. E, 04-Jun-01
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
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1