VDRM = HSC106D/M 400V / 600 V Silicon Controlled Rectifier IT(RMS) = 4.0A Symbol 2.Anode FEATURES 3.Gate Repetitive Peak Off-State Voltage (VDRM=400V/600V) 1.Cathode R.M.S On-State Current (IT(RMS)=4.0A) Average On-State Current (IT(AV)=2.55A) TO-126 1. K 2. A 3. G General Description 1 2 3 HSC106D/M Glassivated PNPN devices designed for high volume consumer applications such as temperature, light and speed control, process and remote control, and warning systems where reliability of operation is important. Absolute Maximum Ratings Symbol VDRM VRRM (Ta=25℃) Parameter Value Units Repetitive Peak Off-State Voltage (Forward) HSC106D HSC106M 400 600 V Repetitive Peak Off-State Voltage (Reverse) HSC106D HSC106M 400 600 V IT(RMS) R.M.S On-State Current (All conduction angles) 4.0 A IT(AV) Average On-State Current 2.55 A ITSM Surge On-State Current (1/2 Cycle, 60Hz, Sine Wave, Non Repetitive, Tj=110℃) 20 A PGM Forward Peak Gate Power Dissipation (Pulse Width ≤1.0μsec, Tc=80℃) 0.5 W PG(AV) Forward Average Gate Power Dissipation (Pulse Width ≤1.0μsec, Tc=80℃) 0.1 W VRGM Reverse Peak Gate Voltage 6.0 V IFGM Forward Peak Gate Current (Pulse Width ≤1.0μsec, Tc=80℃) 0.2 A TSTG Storage Temperature Range -40 to +150 ℃ Operating Junction Temperature -40 to +110 ℃ Tj ◎ SEMIHOW REV.A0, December 2014 HSC106D/M Dec 2014 Symbol (Tc=25℃) Parameter Test Conditions Min Typ Max Units 200 500 uA 0.8 1.0 V IGT Gate Trigger Current(1) VAK=6V, RL=100Ω, Tc=25℃ Tc=-40℃ VGT Gate Trigger Voltage(1) VAK=6V, RL=100Ω, Tc=25℃ Tc=-40℃ 0.4 0.5 VGD Non Trigger Gate Voltage(1) VAK=12V, RL=100Ω, Tc=110℃ 0.2 IH Holding Current VAK=12V, Gate open, Tc=25℃ Tc=-40℃ IL Latching Current VAK=12V, IG=20mA, Tc=25℃ Tc=-40℃ 5.0 7.0 IDRM IRRM Repetitive or Reverse Peak Off-State Current VAK=VDRM or VRRM, PKG=1000Ω Tc=25℃ Tc=110℃ 10 100 uA VTM Peak On-State Voltage(2) IFM=1.0A 2.2 V Max Units (1) RGK Current is not included in measurement (2) Pulse Test : Pulse width ≤ 2.0ms, Duty cycle ≤ 2% 0.6 0.7 V 0.4 0.55 3.0 6.0 mA mA Thermal Characteristics Symbol Parameter Test Conditions Min Typ RTH(J-C) Thermal Resistance Junction to Case 3.0 ℃/W RTH(J-A) Thermal Resistance Junction to Ambient 75 ℃/W TL Maximum Lead Temperature for Soldering Purpose 1/8”, from case for 10second 260 ℃ ◎ SEMIHOW REV.A0, December 2014 HSC106D/M Electrical Characteristics Fig 2. Maximum On-State Power Dissipation TC, Case Temperature [℃] P(AV), Average On-State Power Dissipation [W] Fig 1. Average Current Derating IT(AV), Average On-State Current [A] IT(AV), Average On-State Current [A] Fig 4. Typical Holding Current vs Junction Temperature IH, Holding Current [uA] IGT, Gate Trigger Current [uA] Fig 3. Typical Gate Trigger Current vs Junction Temperature TJ, Junction Temperature [℃] TJ, Junction Temperature [℃] Fig 6. Typical Latching Current vs Junction Temperature IL, Latching Current [uA] VGT, Gate Trigger Voltage [V] Fig 5. Typical Gate Trigger Voltage vs Junction Temperature TJ, Junction Temperature [℃] TJ, Junction Temperature [℃] ◎ SEMIHOW REV.A0, December 2014 HSC106D/M Performance Curves HSC106D/M Package Dimension TO-126 8.5max 0.2 12max 3.8±0.2 φ 2.8max ± 3.2 13max 1.2±0.2 2.5±0.2 1.27typ 0.78±0.08 2.3max 0.5±0.1 2.3max ◎ SEMIHOW REV.A0, December 2014