DMS3014SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® ADVANCE INFORMATION Product Summary Features and Benefits RDS(ON) max ID max TA = 25°C 13mΩ @ VGS = 10V 9.5A 14mΩ @ VGS = 4.5V 9.0A V(BR)DSS • 30V • DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(ON) – minimize conduction losses • Low VSD – reducing the losses due to body diode conduction • Low Qrr – lower Qrr of the integrated Schottky reduces body diode switching losses • Low gate capacitance (Qg/Qgs) ratio – reduces risk of shootthrough or cross conduction currents at high frequencies Small form factor thermally efficient package enables higher density end products • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product • 100% UIS (Avalanche) rated • 100% Rg tested • • • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • • • • Backlighting Power Management Functions DC-DC Converters • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (approximate) Drain Pin 1 S S 8 7 6 5 S G Gate D D D D 1 2 3 4 Source Top View Bottom View Top View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number DMS3014SFG-7 DMS3014SFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 1 of 8 www.diodes.com May 2012 © Diodes Incorporated DMS3014SFG YYWW ADVANCE INFORMATION Marking Information S29 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) S29 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s Continuous Drain Current (Note 6) VGS = 4.5V Steady State t<10s TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH ID Value 30 ±12 9.5 7.6 ID 13.0 9.7 A ID 9.0 7.4 A ID IDM IS IAR EAR Units V V A 12.2 9.3 80 3.0 30 45 A A A mJ Value 1 131 72 2.1 63 35 7.1 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Symbol PD Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Steady state t<10s RθJA Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) PD Steady state t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: RθJA RθJC TJ, TSTG 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 2 of 8 www.diodes.com May 2012 © Diodes Incorporated DMS3014SFG 100 PW = 10µs P(PK), PEAK TRANSIENT POIWER (W) RDS(on) Limited -ID, DRAIN CURRENT (A) 10 DC PW = 10s 1 PW = 1s PW = 100ms PW = 10ms PW = 1ms PW = 100µs 0.1 TJ(max) = 150°C TA = 25°C Single Pulse 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION 100 100 90 Single Pulse RθJA = 61° C/W RθJA(t) = r(t) * RθJA TJ - TA = P * RθJA(t) 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 60° C/W Duty Cycle, D = t1/t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 3 of 8 www.diodes.com May 2012 © Diodes Incorporated DMS3014SFG Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 100 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±12V, VDS = 0V VGS(th) RDS (ON) |Yfs| VSD 9 10 23 0.4 2.2 13 14 0.55 V Static Drain-Source On-Resistance 1.0 - VDS = VGS, ID = 250μA VGS = 10V, ID = 10.4A VGS = 4.5V, ID = 10.4A VDS = 5V, ID = 10.4A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf trr Qrr 0.26 - 2296 164 120 1.3 19.3 45.7 5.0 2.9 5.5 24.4 33.1 6.6 12.9 8.0 4310 2.34 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge VGS = 4.5V Total Gate Charge VGS = 10V Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns ns nC Test Condition VDS = 15V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 10V, ID = 10.4A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 1.2Ω IF = 13A, di/dt = 500A/μs IF = 13A, di/dt = 500A/μs 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 30 30 VGS = 4.0V VGS = 3.5V 25 VDS = 5V 25 VGS = 2.5V ID, DRAIN CURRENT (A) VGS = 4.5V ID, DRAIN CURRENT (A) ADVANCE INFORMATION Electrical Characteristics TA = 25°C unless otherwise specified 20 VGS = 3.0V 15 10 VGS = 2.2V 5 20 VGS = 150°C 15 VGS = 125°C 10 VGS = 85°C VGS = 25°C 5 VGS = -55°C VGS = 2.0V 0 0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic 2 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic 3 POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 4 of 8 www.diodes.com May 2012 © Diodes Incorporated 0.03 VGS = 2.5V 0.02 VGS = 4.5V 0.01 VGS = 10V 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 10A VGS = 10V ID = 20A 1.2 1.0 0.8 0.6 -50 VGS = 4.5V 0.03 TA = 150°C 0.02 TA = 125°C TA = 85°C TA = 25°C 0.01 0 30 1.6 1.4 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.04 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.05 0 TA = -55°C 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 30 0.03 0.02 VGS = 4.5V ID = 10A 0.01 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) VGS = 10V ID = 20A 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 9 On-Resistance Variation with Temperature Fig. 8 On-Resistance Variation with Temperature 20 3.0 18 2.5 16 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMS3014SFG 2.0 1.5 ID = 10mA 1.0 14 TA = 25°C 12 10 8 6 4 0.5 2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 Gate Threshold Variation vs. Ambient Temperature 0 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 11 Diode Forward Voltage vs. Current POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 5 of 8 www.diodes.com May 2012 © Diodes Incorporated DMS3014SFG 10,000 10,000 IDSS, LEAKAGE CURRENT (µA) C, CAPACITANCE (pF) Ciss 1,000 Coss Crss 100 10 TA = 125°C 1,000 TA = 85°C 100 10 TA = 25°C 1 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 12 Typical Total Capacitance 30 0 10 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 13 Typical Leakage Current vs. Drain-Source Voltage 30 10 9 VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION f = 1MHz 8 7 VDS = 15V ID = 11.2A 6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 Qg, TOTAL GATE CHARGE (nC) Fig. 14 Gate-Source Voltage vs. Total Gate Charge POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 6 of 8 www.diodes.com May 2012 © Diodes Incorporated DMS3014SFG ADVANCE INFORMATION Package Outline Dimensions POWERDI3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 − − b 0.27 0.37 0.32 b2 0.20 − − L 0.35 0.45 0.40 L1 0.39 − − e 0.65 − − Z 0.515 − − All Dimensions in mm A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) Suggested Pad Layout X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated DMS3014SFG Document number: DS35594 Rev. 6 - 2 7 of 8 www.diodes.com May 2012 © Diodes Incorporated DMS3014SFG ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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