STMicroelectronics NAND512W3M2CZC5E 256/512mb/1gb (x8/x16, 1.8/3v, 528 byte page) nand flash memories 256/512mb (x16/x32, 1.8v) lpsdram, mcp Datasheet

NAND256-M
NAND512-M, NAND01G-M
256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND
Flash Memories + 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
Features
■
■
Multi-Chip Packages
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 1 die of 256 Mb (x16) SDR
LPSDRAM
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash + 2 dice of 256 Mb (x16) SDR
LPSDRAMs
– 1 die of 256 Mb, 512 Mb (x8/ x16) NAND
Flash +1 die of 256 Mb (x16) DDR
LPSDRAM
– 1 die of 512 Mb (x16) NAND Flash + 1 die
of 256 Mb or 512 Mb (x16) DDR LPSDRAM
Supply voltages
– VDDF = 1.7V to 1.95V or 2.5V to 3.6V
– VDDD = VDDQD = 1.7V to 1.9V
FBGA
TFBGA107 10.5 x 13 x 1.2mm
TFBGA149 10 x 13.5 x 1.2mm
LFBGA137 10.5 x 13 x 1.4mm
TFBGA137 10.5 x 13 x 1.2 mm(1)
(1) Preliminary specifications.
■
Fast Block Erase
– Block erase time: 2ms (typ)
■
Electronic Signature
■
ECOPACK® packages
■
Status Register
■
Temperature range
– -30 to 85°C
■
Data integrity
– 100,000 Program/Erase cycles
– 10 years Data Retention
Flash Memory
■
■
■
■
■
NAND Interface
– x8 or x16 bus width
– Multiplexed Address/ Data
LPSDRAM
■
Interface: x16 or x 32 bus width
■
Deep Power Down mode
Page size
– x8 device: (512 + 16 spare) Bytes
– x16 device: (256 + 8 spare) Words
■
1.8v LVCMOS interface
■
Quad internal Banks controlled by BA0 and
BA1
Block size
– x8 device: (16K + 512 spare) Bytes
– x16 device: (8K + 256 spare) Words
■
Automatic and controlled Precharge
■
Auto Refresh and Self Refresh
– 8,192 Refresh cycles/64ms
– Programmable Partial Array Self Refresh
– Auto Temperature Compensated Self
Refresh
■
Wrap sequence: sequential/interleave
■
Burst Termination by Burst Stop command and
Precharge command
Page Read/Program
– Random access: 15µs (max)
– Sequential access: 50ns (min)
– Page program time: 200µs (typ)
Copy Back Program mode
– Fast page copy without external buffering
August 2006
Rev 5
1/23
www.st.com
2
NAND256-M, NAND512-M, NAND01G-M
Table 1.
Product List
Reference
NAND256-M
Part Number
NAND Product
LPSDRAM Product
Package
NAND256R3M0
256 Mbit (x8), 1.8V
256 Mbit SDR, (x16), 1.8V, 104MHz
TFBGA107
NAND256R4M3
256Mbit (x16) 1.8V
256 Mbit DDR (x16) 1.8V, 133MHz
TFBGA149
NAND256W3M4
256Mbit (x16) 3V
256 Mbit SDR (x16), 1.8V, 104MHz
TFBGA149
256 Mbit SDR (x16), 1.8V, 104MHz
TFBGA107
256 Mbit DDR (x16) 1.8V, 133MHz
TFBGA149
512 Mbit DDR (x16) 1.8V, 133MHz
TFBGA149
NAND512R3M0
NAND512R4M3
NAND512-M
NAND512R4M5
NAND512W3M2
NAND01G-M
2/23
512 Mbit (x8), 1.8V
512Mbit SDR (2x16) (2x256Mbit
SDR x16) 1.8V,104Mhz
LFBGA 137
2 x 512Mbit NAND (x8) 3V
512 Mbit SDR (2x16) (2 x 256Mbit
SDR x16) 1.8V, 104MHz
LFBGA137
1 Gbit NAND (x8) 3V
512Mbit SDR (x32) 1.8V, 133MHz
TFBGA137
512Mbit (x8) 3V
NAND01GW3M2
NAND256-M, NAND512-M, NAND01G-M
Contents
Contents
1
Summary description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
NAND Flash Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
LPSDRAM Component . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3
Package Mechanical . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
4
Part Numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
5
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
3/23
List of tables
NAND256-M, NAND512-M, NAND01G-M
List of tables
Table 1.
Table 2.
Table 3.
Table 4.
Table 5.
Table 6.
Table 7.
Table 8.
Table 9.
Table 10.
Table 11.
4/23
Product List . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Signal Names: NAND Flash & 1 x SDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Signal Names: NAND Flash & 2 x SDR LPSDRAMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Signal Names - NAND Flash & DDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Mechanical Data. . . . . . 17
TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Mechanical Data. . . . . . 18
LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Mechanical Data. . . . . . . 19
TFBGA137 10.5x13mm - 10x13 active ball array, 0.80mm pitch . . . . . . . . . . . . . . . . . . . . 20
Ordering Information Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
NAND256-M, NAND512-M, NAND01G-M
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Logic Diagram: NAND Flash & 1 x SDR LPSDRAM. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Logic Diagram: NAND Flash & 2 x SDR LPSDRAMs. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Logic Diagram: NAND Flash & DDR LPSDRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
TFBGA107 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
TFBGA149 Connections (Top view through package) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
LFBGA137 and TFBGA137 Connections (Top view through package) . . . . . . . . . . . . . . . 15
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Bottom Outline . . . . . . . 17
TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Bottom Outline . . . . . . . 18
LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline . . . . . . . . 19
TFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline . . . . . . . . 20
5/23
Summary description
1
NAND256-M, NAND512-M, NAND01G-M
Summary description
The NAND256-M, NAND512-M and NAND01G-M are Multi-Chip Packages which combine
up to 512 Mbit LPSDRAM with a 256 Mbit, 512 Mbit or 1 Gbit NAND Flash memory. This
combination of LPSDRAM and NAND Flash can result in up to 1 Gbit of memory.
The NAND Flash memory and LPSDRAM components have separate power supplies and
grounds. They also have separate control, address and input/output signals, which allows
simultaneous access to both devices at any moment.
They are distinguished by two chip enable inputs: EF for the NAND Flash memory and ED
for the LPSDRAM. See Figure 1: Logic Diagram: NAND Flash & 1 x SDR LPSDRAM and
Table 2: Signal Names: NAND Flash & 1 x SDR LPSDRAM for an overview of the signals
attached to each component.
The NAND256-M, NAND512-M and NAND01G-M are available with a 1.8 or 3V voltage
supply. See Table 1: Product List for a complete list of the products available.
The devices are offered in the following Multi-Chip packages:
●
TFBGA107 (10.5 x 13 x 1.2mm)
●
LFBGA137 (10.5 x 13 x 1.4mm)
●
TFBGA149 (10 x 13.5 x 1.2mm)
●
TFBGA137 (10.5 x 13 x 1.2mm)
In order to meet environmental requirements, ST offers the NAND256-M, NAND512-M and
NAND01G-M devices in ECOPACK® package. ECOPACK packages are Lead-free. The
category of second Level Interconnect is marked on the package and on the inner box label,
in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
The memories are supplied with all the NAND Flash memory bits erased (set to ‘1’).
This datasheet should be read in conjunction with the NAND Flash and LPSDRAM
datasheets.
NAND Flash Component
The NAND256-M, NAND512-M and NAND01G-M devices contain a 1.8V, 256 Mbit or 512
Mbit, x8 528 Byte Page or x16 264 Word Page, NAND Flash memory with the Chip Enable
Don’t Care option.
For detailed information on how to use the devices, see the NANDxxx-A and
NAND01GWxA2B-KGD datasheets.
6/23
NAND256-M, NAND512-M, NAND01G-M
Summary description
LPSDRAM Component
The NAND256-M and NAND512-M devices contain either:
●
one M65KA256AL: 256Mbit (x16) Single Data Rate (SDR) LPSDRAM
●
two M65KA256AL: 256Mbit (x16) Single Data Rate (SDR) LPSDRAMs (SDR0 and
SDR1)
●
one M65KG256AF: 256Mbit (x16) Double Data Rate (DDR) LPSDRAM
●
one M65KG512AB: 512Mbit (x16) Double Data Rate (DDR) LPSDRAM
●
one M65KC512AB: 512Mbit (x32) Single Data Rate (SDR) LPSDRAM
Refer to Table 1: Product List, for a description of the memories contained in the NAND256M, NAND256-M and NAND01G-M devices.
For detailed information on how to use the SDR LPSDRAM devices, refer to the
M65KA256AL and M65KC512AB datasheets which are available from your local
STMicroelectronics distributor.
For detailed information on how to use the DDR LPSDRAM device, refer to the
M65KG256AB datasheet which is available from your local STMicroelectronics distributor.
Figure 1.
Logic Diagram: NAND Flash & 1 x SDR LPSDRAM
VDDQD VDDD VDDF
13
A0-A12
2
8/16
I/O0-I/O7, x8/x16
BA0-BA1
I/O8-I/O15, x16
EF
16
R
DQ0-DQ15
WF
AL
CL
NAND256-M
NAND512-M
NAND01G-M
WP
RB
K
KE
ED
DQM0
WD
DQM1
RAS
CAS
VSSQD VSSD VSSF
Ai11024b
7/23
Summary description
Table 2.
NAND256-M, NAND512-M, NAND01G-M
Signal Names: NAND Flash & 1 x SDR LPSDRAM
NAND Flash
I/O0-I/O7
Data Inputs/Outputs for x8 devices
I/O8-I/O15
Data Inputs/Outputs for x16 devices
AL
Address Latch Enable
CL
Command Latch Enable
EF
Chip Enable
R
Read Enable
RB
Ready/Busy (open-drain output)
WF
Write Enable
WP
Write Protect
VDDF
Supply Voltage
VSSF
Ground
SDR LPSDRAM
8/23
A0-A12
Row Address: RA0-RA11
Column Address: CA0-CA8
Auto-precharge flag: A10
BA0-BA1
Bank Address
DQ0-DQ15
Data Inputs/Outputs
K
Clock Input
KE
Clock Enable Input
ED
Chip Select inputs
WD
Write Enable Input
RAS
Row Address Strobe Input
CAS
Column Address Strobe Input
DQM0
Upper DQ Mask Enable Output
DQM1
Lower DQ Mask Enable Output
VDDD
Supply Voltage
VDDQD
Input/Output Supply Voltage
VSSD
Ground
VSSQD
Input/Output Ground
NC
Not Connected Internally
NAND256-M, NAND512-M, NAND01G-M
Figure 2.
Summary description
Logic Diagram: NAND Flash & 2 x SDR LPSDRAMs
VDDQD VDDD VDDF
13
A0-A12
2
I/O0-I/O7, x8/x16
BA0-BA1
I/O8-I/O15, x16
EF
R
WF
AL
DQ0-DQ15 x16 SDR0
NAND256-M
NAND512-M
NAND01G-M
DQ16-DQ31 x16 SDR1
CL
WP
RB
K
KE
E0D
E1D
DQM0-DQM3
WD
RAS
CAS
VSS
Ai11022b
9/23
Summary description
Table 3.
NAND256-M, NAND512-M, NAND01G-M
Signal Names: NAND Flash & 2 x SDR LPSDRAMs
NAND Flash
I/O0-I/O7
Data Inputs/Outputs
AL
Address Latch Enable
CL
Command Latch Enable
EF
Chip Enable
R
Read Enable
RB
Ready/Busy (open-drain output)
WF
Write Enable
WP
Write Protect
VDDF
Supply Voltage
VSSF
Ground
SDR LPSDRAM
10/23
A0-A12
Row Address: RA0-RA11
Column Address: CA0-CA8
Auto-precharge flag: A10
BA0-BA1
Bank Address
DQ0-DQ15
Data Inputs/Outputs for x16 devices SDR0
DQ16-DQ31
Data Inputs/Outputs for x16 devices SDR1
K
Clock Input
KE
Clock Enable Input
E0D
Chip Select input for SDR0
E1D
Chip Select input for SDR1
WD
Write Enable Input
RAS
Row Address Strobe Input
CAS
Column Address Strobe Input
DQM0
Lower DQ Mask Enable Output for SDR0
DQM1
Upper DQ Mask Enable Output for SDR0
DQM2
Lower DQ Mask Enable Output for SDR1
DQM3
Upper DQ Mask Enable Output for SDR1
VDDD
Supply Voltage
VDDQD
Input/Output Supply Voltage
VSSD
Ground
VSSQD
Input/Output Ground
NC
Not Connected Internally
NAND256-M, NAND512-M, NAND01G-M
Figure 3.
Summary description
Logic Diagram: NAND Flash & DDR LPSDRAM
VDDQD VDDD VDDF
13
16
A0-A12
I/O0-I/O15
2
BA0-BA1
EF
R
DQ0-DQ15
WF
AL
CL
WP
NAND256-M
NAND512-M
NAND01G-M
UDQS-LDQS
K
RB
K
KE
ED
WD
RAS
CAS
DQM0
DQM1
VSSQD VSSD VSSF
Ai11023b
11/23
Summary description
Table 4.
NAND256-M, NAND512-M, NAND01G-M
Signal Names - NAND Flash & DDR LPSDRAM
NAND Flash
I/O0-I/O15
Data Inputs/Outputs
AL
Address Latch Enable
CL
Command Latch Enable
EF
Chip Enable
R
Read Enable
RB
Ready/Busy (open-drain output)
WF
Write Enable
WP
Write Protect
VDDF
Supply Voltage
VSSF
Ground
DDR LPSDRAM
12/23
A0-A12
Address Inputs
A10 determines the Precharge mode.
BA0-BA1
Bank Select Inputs
DQ0-DQ15
Data Inputs/Outputs
UDQS-LDQS
Data Strobe Inputs/Outputs
K
Clock Input
K
Clock Input
KE
Clock Enable Input
ED
Chip Select inputs
WD
Write Enable Input
RAS
Row Address Strobe Input
CAS
Column Address Strobe Input
DQM0
DQ Mask Enable Input (controls DQ0-DQ7)
DQM1
DQ Mask Enable Input (controls DQ8-DQ15)
VDDD
Supply Voltage
VDDQD
Input/Output Supply Voltage
VSSD
Ground
VSSQD
Input/Output Ground
NC
Not Connected Internally
DU
Do Not Use
NAND256-M, NAND512-M, NAND01G-M
Figure 4.
TFBGA107 Connections (Top view through package)
1
A
B
Summary description
2
3
4
5
6
7
8
DU
9
10
DU
DU
DU
NC
DQ0
VDDD
VSSF
VDDF
NC
A3
NC
C
VSSD
DQ2
DQ1
CL
EF
A0
A1
A2
D
VDDQD
DQ4
DQ3
AL
WF
BA0
BA1
A10
E
VSSQD
DQ6
DQ5
R
RB
RAS
NC
ED
F
VDDQD
NC
DQ7
WP
NC
CAS
WD
VSSD
G
VSSD
DQM0
NC
NC
NC
A12
KE
VDDD
H
VDDD
DQM1
K
NC
NC
A8
A9
A11
J
VSSQD
NC
DQ8
I/O0
I/O2
I/O4
I/O6
A7
K
VDDQD
DQ9
DQ10
I/O8
I/O10
I/O12
I/O14
A6
L
VSSQD
DQ11
DQ12
I/O1
I/O3
I/O5
I/O7
A5
M
VDDD
DQ13
DQ14
I/O9
I/O11
I/O13
I/O15
A4
DQ15
VSSD
VSSF
VDDF
VDDF
VSSF
NC
DU
DU
DU
DU
N
DU
NC
P
DU
DU
AI10143b
13/23
Summary description
Figure 5.
NAND256-M, NAND512-M, NAND01G-M
TFBGA149 Connections (Top view through package)
10
11
12
DU
DU
DU
DU
DU
DU
DU
DU
VSSD
I/O7
NC
DU
A7
A8
I/O6
I/O15
A12
A6
NC
I/O5
I/O14
RAS
A11
A5
NC
I/O4
I/O13
A10
NC
A9
A4
NC
NC
I/O12
NC
NC
NC
NC
NC
NC
VSSF
VDDF
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
CL
NC
NC
DQM0
DQM1
NC
NC
NC
I/O11
L
NC
AL
DQ0
DQ3
LDQS
UDQS
DQ10
DQ13
I/O3
I/O10
M
NC
WF
DQ1
DQ4
DQ6
DQ8
DQ11
DQ14
I/O2
I/O9
N
NC
WP
DQ2
DQ5
DQ7
DQ9
DQ12
DQ15
I/O1
I/O8
VDDQD
VSSQD
VDDD
VSSD
VDDQD
VSSD
I/O0
NC
DU
1
2
3
A
DU
DU
B
DU
DU
C
DU
NC
NC
VDDD
VSSD
K
K
VDDD
DU
NC
NC
A0
ED
WD
KE
NC
RB
A1
BA0
CAS
NC
R
A2
BA1
G
VSSF
EF
A3
H
VDDF
NC
J
NC
K
D
E
F
4
5
6
7
8
9
P
DU
NC
NC
R
DU
DU
DU
DU
DU
DU
DU
DU
DU
DU
DU
DU
T
AI11007b
1. Balls shaded in gray are only present for NAND + DDR devices delivered in the TFBGA149 package.
14/23
NAND256-M, NAND512-M, NAND01G-M
Figure 6.
Summary description
LFBGA137 and TFBGA137 Connections (Top view through package)
1
A
2
3
4
5
6
7
8
DU
B
NC
C
VSSD
D
VDDD
E
9
10
DU
DU
R
CL
VDDF
EF
WF
VDDD
VSSD
NC
WP
AL
VSSF
RB
DQ31
DQ30
VDDQD
VSSQD
A5
A7
A9
DQ25
DQ27
DQ29
DQ28
VSSQD
VDDQD
A6
A8
KE
DQ18
NC
DQ22
DQM3
DQ26
VDDQD
VSSQD
F
A12
A11
NC
DQ17
DQ19
DQ24
DQ23
DQM2
VSSQD
VDDQD
G
NC
RAS
DQ15
DQ16
NC
DQM1
DQ9
K
VDDQD
VSSQD
H
VDDD
CAS
DQ20
DQ21
DQ13
DQ12
NC
NC
VSSQD
VDDD
J
VSSD
ED
BA0
DQ14
DQ11
DQ10
NC
DQM0
VSSQD
VDDQD
K
WD
BA1
A10
A0
DQ7
DQ8
DQ6
DQ4
VDDQD
VSSQD
L
A1
A2
A3
DQ0
DQ1
DQ2
DQ3
DQ5
VDDQD
VSSQD
M
VDDD
VSSD
NC
NC
I/O3
I/O5
NC
I/O7
VSSQD
VDDQD
N
I/O0
I/O1
I/O2
NC
VDDF
I/O6
NC
NC
VDDQD
VSSQD
P
NC
NC
NC
NC
NC
VSSF
I/O4
VDDD
VSSD
NC
R
DU
DU
DU
DU
NC
A4
AI13146
15/23
Maximum rating
2
NAND256-M, NAND512-M, NAND01G-M
Maximum rating
Stressing the device above the rating listed in the Absolute Maximum Ratings table may
cause permanent damage to the device. These are stress ratings only and operation of the
device at these or any other conditions above those indicated in the Operating sections of
this specification is not implied. Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability. Refer also to the STMicroelectronics SURE
Program and other relevant quality documents.
Table 5.
Absolute Maximum Ratings
Value
Symbol
TA
Parameter
Temperature Under Bias
TSTG
Storage Temperature
NAND Flash Input or Output
Voltage
LPSDRAM Input or Output
Voltage
VDDF
VDDD, VDDQD
Max
-30
85
°C
TBD(1)
TBD(1)
°C
-55
125
°C
1.8V device
-0.6
2.7
V
3V device
-0.6
4.6
V
1.8V device
-0.5
2.6
V
1.8V device
-0.6
2.7
V
3V device
-0.6
4.6
V
1.8V device
-0.5
2.6
V
Ambient Operating Temperature
TBIAS
VIO(2)
Unit
Min
NAND Flash Supply Voltage
LPSDRAM Supply Voltage
LPSDRAM Short
Circuit Output
Current
IOS
50
mA
LPSDRAM Power
Dissipation
PD
1.0
W
1. TBD stands for To Be Defined.
2. Minimum Voltage may undershoot to -2V for less than 20ns during transitions on input and I/O pins.
Maximum voltage may overshoot to VDD + 2V for less than 20ns during transitions on I/O pins.
16/23
NAND256-M, NAND512-M, NAND01G-M
Package Mechanical
3
Package Mechanical
Figure 7.
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Bottom Outline
D
D1
FD
b
SE
E
E1
ddd
BALL "B1"
e
FE
SD
e
A
A1
A2
BGA-Z24
1. Drawing not to scale.
Table 6.
TFBGA107 10.5x13mm - 10x14 active ball array, 0.80mm pitch, Mechanical Data
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.20
A1
Max
0.047
0.25
0.010
A2
0.80
0.031
b
0.45
0.40
0.50
0.018
0.016
0.020
D
10.50
10.40
10.60
0.413
0.409
0.417
D1
7.20
0.283
ddd
0.10
12.90
13.10
0.004
E
13.00
0.512
E1
10.40
e
0.80
FD
1.65
0.065
FE
1.30
0.051
SD
0.40
0.016
SE
0.40
0.016
0.508
0.516
–
–
0.409
–
–
0.031
17/23
Package Mechanical
Figure 8.
NAND256-M, NAND512-M, NAND01G-M
TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Bottom Outline
D
D1
b
SE
E
E1
ddd
e
BALL "A1"
FE
FD
e
SD
A
A1
A2
BGA-Z78
Table 7.
TFBGA149 10x13.5mm - 12x16 active ball array, 0.80mm pitch, Mechanical Data
millimeters
inches
Symbol
Typ
Min
A
Typ
Min
1.200
A1
Max
0.0472
0.250
0.0098
A2
0.800
0.0315
b
0.450
0.400
0.500
0.0177
0.0157
0.0197
D
10.000
9.900
10.100
0.3937
0.3898
0.3976
D1
8.800
0.3465
ddd
18/23
Max
0.100
13.400
13.600
0.0039
E
13.500
0.5315
0.5276
0.5354
E1
12.000
e
0.800
–
–
FD
0.600
0.0236
FE
0.750
0.0295
SD
0.400
–
–
0.0157
–
–
SE
0.400
–
–
0.0157
–
–
0.4724
–
–
0.0315
NAND256-M, NAND512-M, NAND01G-M
Figure 9.
Package Mechanical
LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline
D
D1
FD
SD
e
E
E1
ddd
BALL "B1"
FE
e
b
A
A1
A2
BGA-Z83
1. Subject to change without prior notice.
Table 8.
LFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Mechanical Data(1)
millimeters
inches
Symbol
Typ
Min
A
Max
Typ
Min
1.40
A1
Max
0.055
0.25
0.010
A2
1.00
0.039
b
0.45
0.40
0.50
0.018
0.016
0.020
D
10.50
10.40
10.60
0.413
0.409
0.417
D1
7.20
0.283
ddd
0.10
12.90
13.10
0.004
E
13.00
0.512
E1
11.20
e
0.80
FD
1.65
0.065
FE
0.90
0.035
SD
0.40
0.016
0.508
0.516
–
–
0.441
–
–
0.031
1. Subject to change without prior notice.
19/23
Package Mechanical
NAND256-M, NAND512-M, NAND01G-M
Figure 10. TFBGA137 10.5x13mm - 10x13 active ball array, 0.8mm pitch- Bottom Outline
D
D1
FD
SD
e
E
E1
ddd
BALL "B1"
FE
e
b
A
A1
A2
BGA-Z83
1. Subject to change without prior notice.
Table 9.
TFBGA137 10.5x13mm - 10x13 active ball array, 0.80mm pitch
millimeters
inches
Symbol
Typ
Min
A
Typ
Min
1.20
A1
20/23
Max
Max
0.047
0.25
0.010
A2
0.80
0.031
b
0.45
0.40
0.50
0.018
0.016
0.020
D
10.50
10.40
10.60
0.413
0.409
0.417
D1
7.20
E
13.00
0.508
0.516
E1
11.20
e
0.80
–
–
FD
1.65
0.065
FE
0.90
0.035
SD
0.40
–
–
0.283
12.90
13.10
0.512
0.441
–
–
–
–
0.031
0.016
NAND256-M, NAND512-M, NAND01G-M
4
Part Numbering
Table 10.
Ordering Information Scheme
Example:
Part Numbering
NAND256
R
3
M
4
A
ZB
5
E
Device Type
NAND Flash Memory
NAND Flash Density
256 = 256Mb
512 = 512Mb
01G = 1Gb
Operating Voltage
R = VDDF = 1.7V to 1.95V
W = VDDF = 2.5V to 3.6V
NAND Bus Width
3 = x8
4 = x16
Family Identifier
M = 528 Byte Page NAND Flash + LPSDRAM
Device Options
0 = 256, x16, 104MHz, SDR, BGA107
2 = 2 x 256, 2x16, 104MHz, SDR, BGA137 or
512, x32, 133MHz, SDR, BGA137
3 = 256, x16, 133MHz, DDR BGA149
4 = 256, x16, 104MHz, SDR, BGA149
5 = 512, x16, 133MHz, DDR, BGA149
Product Version
A
B
C
Package
ZB = TFBGA
ZC = LFBGA
Temperature range
5 = -30°c to 85°C
Option
E = ECOPACK Package, Standard Packing
F = ECOPACK Package, Tape & Reel Packing
Devices are shipped from the factory with the Flash memory content bits, in valid blocks,
erased to ’1’. For further information on any aspect of this device, please contact your
nearest ST Sales Office.
21/23
Revision history
5
NAND256-M, NAND512-M, NAND01G-M
Revision history
Table 11.
22/23
Document Revision History
Date
Version
Revision Details
06-Feb-2006
1.0
First Issue.
09-Feb-2006
2.0
Reference M65KG256AD changed to M65KG256AB.
07-Apr-2006
3
Part numbers NAND512R4M3 and NAND512R4M5 added,
corresponding to 1 die of 512 Mb (x16) NAND Flash + 1 die of 256 Mb or
512 Mb (x16) DDR LPSDRAM.
23-May-2006
4
Temperature range -25 to 85°C removed for 512 Mbit LPSDRAMs.
NAND512W3M2 part number added in Table 1: Product List.
Figure 5: TFBGA149 Connections (Top view through package) updated.
LPSDRAM supply voltage changed to 1.7 to 1.9V.
24-Aug-2006
5
1 Gbit (x8) 3V NAND Flash memory and 512Mbit SDR (x32) 1.8V,
133MHz LPSDRAM added for NAND01GW3M2.
TFBGA137 package added.
NAND256-M, NAND512-M, NAND01G-M
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