PROCESS CP324X Small Signal MOSFET Transistor N- Channel Enhancement-Mode Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 21.6 x 21.6 MILS Die Thickness 5.9 MILS Gate Bonding Pad Area 5.5 x 5.5 MILS Source Bonding Pad Area 5.9 x 13.8 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 12,000Å GEOMETRY GROSS DIE PER 5 INCH WAFER 33,500 PRINCIPAL DEVICE TYPES 2N7002 GATE SOURCE BACKSIDE DRAIN R0 R0 (30-August 2011) w w w. c e n t r a l s e m i . c o m PROCESS CP324X Typical Electrical Characteristics R0 (30-August 2011) w w w. c e n t r a l s e m i . c o m