Infineon IGCM04B60GA Control integrated power system Datasheet

Control Integrated POwer
System (CIPOS™)
IGCM04B60GA
Datasheet
For Power Management Application
1
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Table of Contents
CIPOS™ Control Integrated POwer System ........................................................................................................ 3
Features .............................................................................................................................................................. 3
Target Applications ........................................................................................................................................... 3
Description ......................................................................................................................................................... 3
System Configuration ....................................................................................................................................... 3
Pin Configuration .................................................................................................................................................... 4
Internal Electrical Schematic ................................................................................................................................. 4
Pin Assignment ....................................................................................................................................................... 5
Pin Description .................................................................................................................................................. 5
HIN(U,V,W) and LIN(U,V,W) (Low side and high side control pins, Pin 7 - 12) ................................................5
VFO (Fault-output and NTC, Pin 14) .................................................................................................................6
ITRIP (Over current detection function, Pin 15) ................................................................................................6
VDD, VSS (Low side control supply and reference, Pin 13, 16) .......................................................................6
VB(U,V,W) and VS(U,V,W) (High side supplies, Pin 1, 2, 3, 4, 5, 6) ................................................................6
N (Low side common emitter, Pin 17) ...............................................................................................................6
W, V, U (High side emitter and low side collector, Pin 18 - 20).........................................................................6
P, NR (Positive bus input voltage and negative bus voltage, Pin 21, 24) .........................................................6
R, S (Single phase diode bridge rectifier input pins, Pin 22, 23) .......................................................................6
Absolute Maximum Ratings................................................................................................................................... 7
Module Section .................................................................................................................................................. 7
Inverter Section.................................................................................................................................................. 7
Rectifier Diode Section ..................................................................................................................................... 7
Control Section .................................................................................................................................................. 8
Recommended Operation Conditions .................................................................................................................. 8
Static Parameters ................................................................................................................................................... 9
Dynamic Parameters ............................................................................................................................................ 10
Bootstrap Parameters .......................................................................................................................................... 10
Thermistor ............................................................................................................................................................. 11
Mechanical Characteristics and Ratings............................................................................................................ 11
Circuit of a Typical Application ........................................................................................................................... 12
Switching Times Definition .................................................................................................................................. 12
Electrical characteristic ....................................................................................................................................... 13
Package Outline .................................................................................................................................................... 14
Datasheet
2
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
CIPOS™
Control Integrated POwer System
Dual In-Line Intelligent Power Module
3Φ-bridge 600V / 4A
Features
Description
Fully isolated Dual In-Line molded module
 Infineon reverse conducting IGBTs with a
monolithic body diode
 Optimized diodes for single phase diode bridge
rectifier
 Rugged SOI gate driver technology with stability
against transient and negative voltage
 Allowable negative VS potential up to -11V for
signal transmission at VBS=15V
 Integrated bootstrap functionality
 Over current shutdown
 Temperature monitor
 Under-voltage lockout at all channels
 Low side common emitter
 Cross-conduction prevention
 All of 6 switches turn off during protection
 Lead-free terminal plating; RoHS compliant
The CIPOS™ module family offers the chance for
integrating various power and control components
to increase reliability, optimize PCB size and system
costs.
It is designed to control three phase AC motors and
permanent magnet motors in variable speed drives
for applications like a refrigerator and a dish
washer. The package concept is specially adapted
to power applications, which need good thermal
conduction and electrical isolation, but also EMIsave control and overload protection.
The feature of Infineon reverse conducting IGBT is
combined with an optimized SOI gate driver for
excellent electrical performance.
System Configuration
 3 half bridges with reverse conducting IGBT
 Single phase diode bridge rectifier
 3Φ SOI gate driver
 Thermistor
Target Applications
 Pin-to-heasink creepage distance typ. 1.6mm
 Dish washers
 Refrigerators
 Fans
 Low power motor drives
Datasheet
3
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Pin Configuration
Bottom View
(24) NR
(1) VS(U)
(2) VB(U)
(23) R
(3) VS(V)
(4) VB(V)
(22) S
(5) VS(W)
(6) VB(W)
(21) P
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(20) U
(19) V
(13) VDD
(14) VFO
(18) W
(15) ITRIP
(16) VSS
(17) N
Figure 1: Pin configuration
Internal Electrical Schematic
Figure 2: Internal schematic
Datasheet
4
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Pin Assignment
Pin Number
Pin Name
Pin Description
1
VS(U)
U-phase high side floating IC supply offset voltage
2
VB(U)
U-phase high side floating IC supply voltage
3
VS(V)
V-phase high side floating IC supply offset voltage
4
VB(V)
V-phase high side floating IC supply voltage
5
VS(W)
W-phase high side floating IC supply offset voltage
6
VB(W)
W-phase high side floating IC supply voltage
7
HIN(U)
U-phase high side gate driver input
8
HIN(V)
V-phase high side gate driver input
9
HIN(W)
W-phase high side gate driver input
10
LIN(U)
U-phase low side gate driver input
11
LIN(V)
V-phase low side gate driver input
12
LIN(W)
W-phase low side gate driver input
13
VDD
Low side control supply
14
VFO
Fault output / Temperature monitor
15
ITRIP
Over-current shutdown input
16
VSS
Low side control negative supply
17
N
Low side common emitter
18
W
Motor W-phase output
19
V
Motor V-phase output
20
U
Motor U-phase output
21
P
Positive bus input voltage
22
S
Single phase diode bridge rectifier S input
23
R
Single phase diode bridge rectifier R input
24
NR
Negative bus voltage
Pin Description
HIN(U,V,W) and LIN(U,V,W) (Low side and high
side control pins, Pin 7 - 12)
These pins are positive logic and they are
responsible for the control of the integrated IGBT.
The Schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3V controller outputs. Pull-down resistor
of about 5k is internally provided to pre-bias inputs
during supply start-up and a zener clamp is
provided for pin protection purposes. Input Schmitttrigger and noise filter provide beneficial noise
rejection to short input pulses.
 5k
Figure 3: Input pin structure
The noise filter suppresses control pulses which are
below the filter time tFILIN. The filter acts according to
Figure 4.
Datasheet
Figure 4: Input filter timing diagram
5
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
It is recommended for proper work of CIPOS™ not
to provide input pulse-width lower than 1us.
VDD, VSS (Low side control supply and
reference, Pin 13, 16)
VDD is the low side supply and it provides power
both to input logic and to low side output power
stage. Input logic is referenced to VSS ground.
The integrated gate drive provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of the
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3
and LO3). When two inputs of a same leg are
activated, only former activated one is activated so
that the leg is kept steadily in a safe state.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of VDDUV+ = 12.1V is present.
The IC shuts down all the gate drivers’
outputs, when the VDD supply voltage is
VDDUV- = 10.4V. This prevents the external
switches from critically low gate voltage
during on-state and therefore from excessive
dissipation.
A minimum deadtime insertion of typically 380ns is
also provided by driver IC, in order to reduce crossconduction of the external power switches.
VFO (Fault-output and NTC, Pin 14)
The VFO pin indicates a module failure in case of
under voltage at pin VDD or in case of triggered
over current detection at ITRIP. A pull-up resistor is
externally required to bias the NTC.
VB(U,V,W) and VS(U,V,W) (High side supplies,
Pin 1, 2, 3, 4, 5, 6)
VB to VS is the high side supply voltage. The high
side circuit can float with respect to VSS following
the external high side power device emitter voltage.
VDD
RON ,FLT
VFO
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
from ITRIP -Latch
>1
VSS
from uv -detection
Thermistor
power
below
power
levels
power
The under-voltage detection operates with a rising
supply threshold of typical VBSUV+ = 12.1V and a
falling threshold of VBSUV- = 10.4V.
CIPOS™
Figure 5: Internal circuit at pin VFO
VS(U,V,W) provide a high robustness against
negative voltage in respect of VSS of -50V
transiently. This ensures very stable designs even
under rough conditions.
The same pin provides direct access to the NTC,
which is referenced to VSS. An external pull-up
resistor connected to +5V ensures, that the resulting
voltage can be directly connected to the
microcontroller
N (Low side common emitter, Pin 17)
The low side common emitter is available for current
measurement. It is recommended to keep the
connection to pin VSS as short as possible in order
to avoid unnecessary inductive voltage drops.
ITRIP (Over current detection function, Pin 15)
CIPOS™ provides an over current detection
function by connecting the ITRIP input with the
motor current feedback. The ITRIP comparator
threshold (typ. 0.47V) is referenced to VSS ground.
An input noise filter (typ: tITRIPMIN = 530ns) prevents
the driver to detect false over-current events.
W, V, U (High side emitter and low side collector,
Pin 18 - 20)
These pins are motor U, V, W input pins.
P, NR (Positive bus input voltage and negative
bus voltage, Pin 21, 24)
The high side IGBT are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 450 V. The bus voltage is referenced to NR
ground.
Over current detection generates a shut down of all
outputs of the gate driver after the shutdown
propagation delay of typically 1000ns.
The fault-clear time is set to typical 65us.
R, S (Single phase diode bridge rectifier input
pins, Pin 22, 23)
Rectifier input pins for connecting to the grid line.
Datasheet
6
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Absolute Maximum Ratings
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Module Section
Description
Condition
Storage temperature range
Insulation test voltage
RMS, f=60Hz, t =1min
Operating case temperature range
Refer to Figure 6
Symbol
Value
Unit
min
max
Tstg
-40
125
°C
VISOL
2000
-
V
TC
-40
100
°C
Inverter Section
Description
Condition
Symbol
Value
min
max
Unit
Max. blocking voltage
IC=250µA
VCES
600
-
V
DC link supply voltage of P-N
Applied between P-N
VPN
-
450
V
DC link supply voltage (surge) of P-N
Applied between P-N
VPN(surge)
-
500
V
Output current
TC = 25°C, TJ<150°C
TC = 100°C, TJ<150°C
IC
-4
-2.5
4
2.5
A
Maximum peak output current
less than 1ms
IC
-8
8
A
Short circuit withstand time1
VDC ≤400V,
TJ=150°C
tSC
-
5
µs
Power dissipation per IGBT
Ptot
-
18.7
W
Operating junction temperature range
TJ
-40
150
°C
RthJC
-
6.67
K/W
Single IGBT thermal resistance,
junction-case
Rectifier Diode Section
Description
Condition
Maximum repetitive reverse voltage
Value
Unit
min
max
VRRM
900
-
V
RMS forward current
TC = 100°C, TJ<150°C
IFRM
-
10
A
Peak surge forward current
50Hz, Non repetitive
TC = 25°C
TC = 125°C
IFSM
-
130
110
A
I2t - value
tp = 10ms
TC = 25°C
TC = 125°C
I2t
-
84
60
A2s
TJ(RD)
-40
150
°C
RthJC(RD)
-
6.0
K/W
Operating junction temperature range
Single Diode thermal resistance,
junction-case
1
Symbol
Allowed number of short circuits: <1000; time between short circuits: >1s.
Datasheet
7
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Control Section
Description
Condition
Symbol
Value
min
max
Unit
Module supply voltage
VDD
-1
20
V
High side floating supply voltage
(VB vs. VS)
VBS
-1
20
V
VIN
VITRIP
-1
-1
10
10
V
fPWM
-
20
kHz
max
Unit
Input voltage
LIN, HIN, ITRIP
Switching frequency
Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Description
Value
typ
Symbol
min
DC link supply voltage of P-N
VPN
0
-
400
V
High side floating supply voltage (VB vs. VS)
VBS
13.5
-
18.5
V
Low side supply voltage
VDD
14.0
16
18.5
V
Control supply variation
ΔVBS,
ΔVDD
-1
-1
-
1
1
V/µs
Logic input voltages LIN,HIN,ITRIP
VIN
VITRIP
0
0
-
5
5
V
Between VSS - N (including surge)
VSS
-5
-
5
V
Figure 6: TC measurement point2
2
Any measurement except for the specified point in figure 6 is not relevant for the temperature verification and
brings wrong or different information.
Datasheet
8
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Static Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
Value
min
typ
max
Unit
Collector-Emitter saturation voltage
Iout = 2.5A
TJ = 25°C
TJ = 150°C
VCE(sat)
-
1.6
1.8
2.0
-
V
Emitter-Collector forward voltage
Iout = -2.5A
TJ = 25°C
TJ = 150°C
VF
-
1.75
1.8
2.2
-
V
Rectifier diode forward voltage
Iin= -10A
TJ = 25°C
TJ = 150°C
VFR
-
1
0.95
1.4
-
V
Collector-Emitter leakage current
VCE = 600V
ICES
-
-
1
mA
Logic "1" input voltage (LIN,HIN)
VIH
-
2.1
2.5
V
Logic "0" input voltage (LIN,HIN)
VIL
0.7
0.9
-
V
ITRIP positive going threshold
VIT,TH+
400
470
540
mV
ITRIP input hysteresis
VIT,HYS
40
70
-
mV
VDD and VBS supply under voltage
positive going threshold
VDDUV+
VBSUV+
10.8
12.1
13.0
V
VDD and VBS supply under voltage
negative going threshold
VDDUVVBSUV-
9.5
10.4
11.2
V
VDD and VBS supply under voltage
lockout hysteresis
VDDUVH
VBSUVH
1.0
1.7
-
V
Input clamp voltage
(HIN, LIN, ITRIP)
Iin=4mA
VINCLAMP
9.0
10.1
12.5
V
Quiescent VBx supply current
(VBx only)
HIN = 0V
IQBS
-
300
500
µA
Quiescent VDD supply current (VDD
only)
LIN = 0V, HINX=5V
IQDD
-
370
900
µA
Input bias current
VIN = 5V
IIN+
-
1
1.5
mA
Input bias current
VIN = 0V
IIN-
-
2
-
µA
ITRIP input bias current
VITRIP = 5V
IITRIP+
-
65
150
µA
VFO input bias current
VFO = 5V, VITRIP = 0V
IFO
-
60
-
µA
VFO output voltage
IFO = 10mA, VITRIP = 1V
VFO
-
0.5
-
V
Datasheet
9
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Dynamic Parameters
(VDD = 15V and TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
Turn-on propagation delay time
VLIN,HIN = 5V;
Iout = 2.5A,
VDC = 300V
Turn-on rise time
Turn-on switching time
Turn-off fall time
Turn-off switching time
VLIN,HIN = 5V;
Iout = 2.5A,
VDC = 300V
typ
max
ton
-
605
-
ns
tr
-
15
-
ns
tc(on)
60
ns
trr
70
ns
toff
-
685
-
ns
tf
-
180
-
ns
tc(off)
Short circuit propagation delay time
From VIT,TH+ to 10% ISC
Input filter time ITRIP
VITRIP = 1V
Input filter time at LIN, HIN for turn
on and off
VLIN,HIN = 0V & 5V
Fault clear time after ITRIP-fault
VITRIP = 1V
Deadtime between low side and high
side
Unit
min
Reverse recovery time
Turn-off propagation delay time
Value
200
ns
tSCP
-
1450
-
ns
tITRIPmin
-
530
-
ns
tFILIN
-
290
-
ns
tFLTCLR
40
65
200
µs
DTPWM
1.0
-
-
µs
Deadtime of gate drive circuit
DTIC
380
ns
IGBT turn-on energy (includes
reverse recovery of diode)
VDC = 300V, IC = 2.5A,
TJ = 25°C
150°C
Eon
-
20
35
-
µJ
IGBT turn-off energy
VDC = 300V, IC = 2.5A,
TJ = 25°C
150°C
Eoff
-
40
70
-
µJ
Diode recovery energy
VDC = 300V, IC = 2.5A,
TJ = 25°C
150°C
Erec
-
10
25
-
µJ
Bootstrap Parameters
(TJ = 25°C, if not stated otherwise)
Description
Condition
Symbol
Repetitive peak reverse
voltage
1
VRRM
Value
min
typ
600
max
Unit
V
RBS1
35
40
50
65

IF = 0.6A, di/dt = 80A/µs
trr_BS
50
ns
IF = 20mA, VS2 and VS3 = 0V
VF_BS
2.6
V
Bootstrap resistance of
U-phase1
VS2 or VS3 = 300V, TJ = 25°C
VS2 and VS3 = 0V, TJ = 25°C
VS2 or VS3 = 300V, TJ = 125°C
VS2 and VS3 = 0V, TJ = 125°C
Reverse recovery time
Forward voltage drop
RBS2 and RBS3 have same values to RBS1.
Datasheet
10
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Thermistor
Description
Condition
Resistor
TNTC = 25°C
B-constant of NTC
(Negative temperature coefficient)
Symbol
Value
Unit
min
typ
max
RNTC
-
85
-
k
B(25/100)
-
4092
-
K
3500
Min.
Typ.
Max.
30
2500
2000
1500
Thermistor resistance [kΩ ]
Thermistor resistance [kΩ ]
35
3000
25
20
15
10
5
0
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
1000
Thermistor temperature [℃]
500
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
Thermistor temperature [℃]
Figure 7: Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN CIPOS-mini 1 Technical description’)
Mechanical Characteristics and Ratings
Description
Condition
Value
Unit
min
typ
max
Mounting torque
M3 screw and washer
0.59
0.69
0.78
Nm
Flatness
Refer to Figure 8
-50
-
100
µm
-
6.15
-
g
Weight
Figure 8: Flatness measurement position
Datasheet
11
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Circuit of a Typical Application
NR (24)
(1) VS(U)
R (23)
(2) VB(U)
HO1
VB1
VS1
(4) VB(V)
S (22)
RBS1
(3) VS(V)
HO2
VB2
VS2
RBS2
P (21)
(5) VS(W)
(6) VB(W)
HO3
VB3
VS3
U (20)
RBS3
Micro
Controller
VDD line
(7) HIN(U)
HIN1
(8) HIN(V)
HIN2
(9) HIN(W)
HIN3
(10) LIN(U)
LIN1
(11) LIN(V)
LIN2
(12) LIN(W)
LIN3
(13) VDD
(14) VFO
5 or 3.3V line
(15) ITRIP
(16) VSS
LO1
V (19)
3-ph AC
Motor
LO2
W (18)
VDD
VFO
LO3
ITRIP
N (17)
VSS
Thermistor
Figure 9: Application circuit
Switching Times Definition
Figure 10: Switching times definition
Datasheet
12
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Electrical characteristic
8
8
8
VDD=15V
6
5
4
VDD=13V
VDD=15V
VDD=20V
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VCE(sat), Collector - Emitter voltage [V]
5
4
3
TJ=25℃
2
TJ=150℃
1
0.5
1.0
High side @T J=150 ℃
Low side @T J =25 ℃
0.25
Low side @T J =150 ℃
0.20
0.15
0.10
0.05
3.5
4.0
0
1
2
3
4
5
6
7
8
Low side @ T J =25 ℃
Low side @ T J =150 ℃
0.21
0.18
0.15
0.12
0.09
0.06
V DC =300V
V DD =15V
0.03
0
1
2
3
4
5
6
7
High side @ T J=150 ℃
Low side @ T J=25 ℃
Low side @ T J=150 ℃
640
620
600
580
560
2
3
4
5
240
High side @ T J =25 ℃
210
High side @ T J =150 ℃
180
Low side @ T J =25 ℃
Low side @ T J =150 ℃
150
120
90
60
6
7
0
8
0
1
2
3
4
5
6
7
trr, Reverse recovery time [ns]
900
800
High side @ T J =25 ℃
High side @ T J =150 ℃
600
Low side @ T J =25 ℃
500
Low side @ T J =150 ℃
400
300
200
1
2
3
4
5
6
Ic, Collector current [A]
Typ. Turn off switching time
Datasheet
7
8
270
V DC =300V
V DD =15V
240
High side @ T J =25 ℃
2.5
3.0
3.5
High side @T J=25 ℃
High side @T J=150 ℃
70
Low side @T J =25 ℃
60
Low side @T J =150 ℃
50
40
30
20
10
0
1
2
3
4
5
6
7
8
V D C =300V
V D D =15V
1700
1600
High side @T J =25 ℃
1500
High side @T J =150 ℃
Low side @ T J =25 ℃
1400
Low side @ T J =150 ℃
1300
1200
1100
1000
900
800
700
600
0
1
Low side @ T J =25 ℃
Low side @ T J =150 ℃
180
2
3
4
5
6
7
8
Typ. Turn off propagation delay time
High side @ T J =150 ℃
210
150
10
1
D : duty ratio
0.1
D =50%
D =20%
D =10%
D =5%
D =2%
Single pulse
0 .0 1
120
90
1E -3
60
0
2.0
Ic, Collector current [A]
30
100
0
80
1800
8
300
V DC =300V
V DD =15V
1.5
V DC =300V
V DD =15V
90
Typ. Turn on switching time
1100
1.0
VF, Emitter - Collector voltage [V]
Ic, Collector current [A]
Typ. Turn on propagation delay time
700
0.5
1900
V DC =300V
V DD =15V
270
Ic, Collector current [A]
1000
TJ=150℃
Typ. Reverse recovery energy loss
ZthJC, RC-IGBT transient thermal resistance [K/W]
1
TJ=25℃
1
Ic, Collector current [A]
30
0
2
0
8
toff, Turn off propagation delay time [ns]
tc(on), Turn on switching time [ns]
High side @ T J=25 ℃
660
3
Typ. Emitter – Collector forward voltage
300
680
4
Typ. Turn off switching energy loss
V DC =300V
V DD =15V
700
5
Ic, Collector current [A]
740
720
6
0
0.0
4.5
High side @ T J =150 ℃
0.24
0.00
7
100
Typ. Turn on switching energy loss
ton, Turn on propagation delay time [ns]
3.0
High side @ T J =25 ℃
0.27
Ic, Collector current [A]
tc(off), Turn off switching time [ns]
2.5
Erec, Reverse recovery energy loss [uJ]
Eoff, Turn off switching energy loss [mJ]
High side @T J=25 ℃
0.30
0
2.0
0.30
V DC =300V
V DD =15V
0.35
540
1.5
VCE(sat), Collector - Emitter voltage [V]
Typ. Collector – Emitter saturation voltage
0.40
Eon, Turn on switching energy loss [mJ]
6
0
0.0
4.0
Typ. Collector – Emitter saturation voltage
0.00
7
IF, Emitter - Collector current [A]
7
Ic, Collector - Emitter current [A]
Ic, Collector - Emitter current [A]
TJ=25℃
0
1
2
3
4
5
6
Ic, Collector current [A]
Typ. Reverse recovery time
13
7
8
1E -4
1E -7
1E -6
1E -5
1E -4
1E -3
0.01
0 .1
t P , P u lse w id th [se c.]
1
10
10 0
IGBT transient thermal resistance at all six
IGBTs operation
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Package Outline
Datasheet
14
Ver. 1.0, 2014-06-01
CIPOS™ IGCM04B60GA
Revision History
Major changes since the last revision
Page or Reference
Datasheet
Description of change
15
Ver. 1.0, 2014-06-01
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™,
DI-POL™, DrBLADE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™,
HybridPACK™, ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™,
POWERCODE™, PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™,
SIPMOS™, SmartLEWIS™, SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™, PRIMECELL™, REALVIEW™, THUMB™, µVision™
of ARM Limited, UK. ANSI™ of American National Standards Institute. AUTOSAR™ of AUTOSAR development partnership. Bluetooth™ of Bluetooth
SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of
Epcos AG. FLEXGO™ of Microsoft Corporation. HYPERTERMINAL™ of Hilgraeve Incorporated. MCS™ of Intel Corp. IEC™ of Commission
Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR
STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics
Corporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA MANUFACTURING CO., MICROWAVE
OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of OmniVision Technologies, Inc. Openwave™ of Openwave Systems Inc. RED HAT™
of Red Hat, Inc. RFMD™ of RF Micro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™ of
Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co. TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of
Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™ of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design
Systems, Inc. VLYNQ™ of Texas Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes Zetex.
Last Trademarks Update 2014-07-17
www.Infineon.com
Edition 2014-06-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2015.
All Rights Reserved.
IMPORTANT NOTICE
The information given in this document shall in no event be
regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples, hints
or any typical values stated herein and/or any information
regarding the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind,
including without limitation warranties of non-infringement of
intellectual property rights of any third party.
In addition, any information given in this document is subject to
customer’s compliance with its obligations stated in this document
and any applicable legal requirements, norms and standards
concerning customer’s products and any use of the product of
Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for
technically trained staff. It is the responsibility of customer’s
technical departments to evaluate the suitability of the product for
the intended application and the completeness of the product
information given in this document with respect to such
application.
For further information on the product, technology, delivery terms
and conditions and prices please contact your nearest Infineon
Technologies office (www.infineon.com).
WARNINGS
Due to technical requirements products may contain dangerous
substances. For information on the types in question please
contact your nearest Infineon Technologies office.
Except as otherwise explicitly approved by Infineon Technologies
in a written document signed by authorized representatives of
Infineon Technologies, Infineon Technologies’ products may not be
used in any applications where a failure of the product or any
consequences of the use thereof can reasonably be expected to
result in personal injury.
Similar pages