CYStech Electronics Corp. Spec. No. : C708E3 Issued Date : 2011.12.26 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB40N06E3 Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating package Equivalent Circuit BVDSS 60V ID 26A RDSON(TYP)@VGS=10V,ID=10A 35mΩ RDSON(TYP)@VGS=4.5V,ID=8A 40mΩ Outline TO-220 MTB40N06E3 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=26A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1. Pulse width limited by maximum junction temperature Symbol Limits VDS VGS ID ID IDM IAS EAS EAR 60 ±20 26 16 50 26 34 5 50 20 -55~+150 PD Tj, Tstg Unit V A mJ W °C *2. Duty cycle ≤ 1% MTB40N06E3 CYStek Product Specification Spec. No. : C708E3 Issued Date : 2011.12.26 Revised Date : Page No. : 2/7 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 62.5 Unit °C/W °C/W Characteristics (Tc=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS *1 IGSS IDSS RDS(ON) *1 Dynamic Qg *1, 2 Qgs *1, 2 Qgd *1, 2 td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Ciss Coss Crss Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. Typ. Max. Unit Test Conditions 60 1.0 - 1.8 36 35 40 3.0 ±100 1 25 45 50 V V S nA μA μA mΩ mΩ VGS=0, ID=250μA VDS =VGS, ID=250μA VDS =5V, ID=10A VGS=±20, VDS=0 VDS =60V, VGS =0 VDS =60V, VGS =0, Tj=125°C VGS =10V, ID=10A VGS =4.5V, ID=8A - 12 3.4 3.8 10 3.5 32 7.5 1137 47.3 35.7 - nC ID=10A, VDS=20V, VGS=10V ns VDS=20V, ID=1A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz - 15 8 26 50 1.3 - A V ns nC IF=IS, VGS=0V IF=5A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Ordering Information Device MTB40N06E3 MTB40N06E3 Package TO-220 (Pb-free lead plating package) Shipping 50 pcs / tube, 20 tubes/box, 4 boxes/carton CYStek Product Specification CYStech Electronics Corp. Spec. No. : C708E3 Issued Date : 2011.12.26 Revised Date : Page No. : 3/7 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 10V 9V 8V 7V 6V 5V ID, Drain Current(A) 50 40 BVDSS, Drain-Source Breakdown Voltage(V) 80 60 VGS=4V 30 20 VGS=2V VGS=3V 10 1 5 2 3 4 VDS, Drain-Source Voltage(V) 70 65 60 ID=250μA, VGS=0V 55 50 -100 0 0 75 Static Drain-Source On-State resistance vs Drain Current 200 1.2 VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 0 50 100 150 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 10000 1000 VGS=2.5V VGS=3V 100 VGS=4.5V VGS=0V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 10 0.001 0.2 0.01 0.1 1 ID, Drain Current(A) 10 0 100 2 4 6 8 IDR, Reverse Drain Current(A) 10 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 100 R DS(on) , Static Drain-Source On-State Resistance(mΩ) 400 R DS(on) , Static Drain-Source OnState Resistance(mΩ) -50 360 320 280 240 200 160 120 ID=10A ID=8A 80 40 80 VGS=4.5V, ID=8A 60 40 VGS=10V, ID=10A 20 0 0 0 MTB40N06E3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C708E3 Issued Date : 2011.12.26 Revised Date : Page No. : 4/7 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2.4 VGS(th) , Threshold Voltage(V) Capacitance---(pF) 10000 Ciss 1000 100 C oss ID=250μA 2.2 2 1.8 1.6 1.4 1.2 Crss 1 10 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 100 140 10 VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 60 Gate Charge Characteristics 10 1 0.1 VDS=10V Pulsed Ta=25°C VDS=20V ID=10A 8 6 4 2 0 0.01 0.01 0.1 1 Drain Current-ID(A) 0 10 2 4 6 8 10 12 Qg, Total Gate Charge(nC) 14 16 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 100 30 10 10μs 100μ 1ms 10ms ID, Maximum Drain Current(A) RDS(ON) limited ID, Drain Current(A) 20 Tj, Junction Temperature(°C) 100ms DC 1 TC=25°C, Tj=150°C VGS=10V Single Pulse 0.1 25 20 15 10 5 0 0.01 0.1 MTB40N06E3 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C708E3 Issued Date : 2011.12.26 Revised Date : Page No. : 5/7 Typical Characteristics(Cont.) Power Derating Curve Typical Transfer Characteristics 60 70 VDS=10V PD, Power Dissipation(W) ID, Drain Current (A) 60 50 40 30 20 50 40 30 20 10 10 0 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 12 0 20 40 60 80 100 120 TC, Case Temperature(℃) 140 160 Transient Thermal Response Curves 10 ZθJC(t), Thermal Response D=0.5 1 1.ZθJC(t)=2.5 °C/W max. 2.Duty Factor, D=t 1/t2 3.TJM-TC=PDM*ZθJC(t) 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTB40N06E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C708E3 Issued Date : 2011.12.26 Revised Date : Page No. : 6/7 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB40N06E3 CYStek Product Specification Spec. No. : C708E3 Issued Date : 2011.12.26 Revised Date : Page No. : 7/7 CYStech Electronics Corp. TO-220 Dimension A Marking: B D E C H Device Name I □□□□ 1 3 G 40N06 K M 2 Date Code 3 N 2 1 4 O P 3-Lead TO-220 Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB40N06E3 CYStek Product Specification