MIMMG50W120XB6TN 1200V 50A PIM Module RoHS Compliant FEATURES □ High level of integration—only one power semiconductor module required for the whole drive □ Low saturation voltage and positive temperature coefficient □ Fast switching and short tail current □ Free wheeling diodes with fast and soft reverse recovery □ Industry standard package with insulated copper base plate and soldering pins for PCB mounting □ Temperature sense included APPLICATIONS □ AC motor control □ Motion/servo control □ Inverter and power supplies PIM Three Phase Input Rectifier INVERTER SECTOR ABSOLUTE MAXIMUM RATINGS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Values Unit 1200 V ±20 V TC=25°C 75 A TC=80°C 50 A tp=1ms 100 A 260 W TVj=25°C 1200 V TC=25°C 75 A TC=80°C 50 A tp=1ms 100 A TVj =125°C, t=10ms, VR=0V 680 A2s IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT TVj=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current 2 It MIMMG50W120XB6TN INVERTER SECTOR ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit 5.0 5.8 6.5 V IGBT VGE(th) VCE(sat) Gate - Emitter Threshold Voltage VCE=VGE, IC=2.0mA Collector - Emitter IC=50A, VGE=15V, TVj=25°C 1.7 V Saturation Voltage IC=50A, VGE=15V, TVj=125°C 1.9 V VCE=1200V, VGE=0V, TVj=25°C 1 mA VCE=1200V, VGE=0V, TVj=125°C 10 mA 400 nA ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC Junction-to-Case Thermal Resistance VCE=0V,VGE±15V, TVj=125°C VCE=600V, IC=50A , VGE=±15V VCE=25V, VGE=0V, f =1MHz -400 4.0 Ω 0.47 µC 3.6 nF 0.16 nF VCC=600V,IC=50A, TVj =25°C 90 ns RG =18Ω, TVj =125°C 90 ns VGE=±15V, TVj =25°C 30 ns Inductive Load TVj =125°C 50 ns VCC=600V,IC=50A, TVj =25°C 420 ns RG =18Ω, TVj =125°C 520 ns VGE=±15V, TVj =25°C 70 ns Inductive Load TVj =125°C 90 ns VCC=600V,IC=80A, TVj =25°C 4.9 mJ RG =18Ω, TVj =125°C 6.6 mJ VGE=±15V, TVj =25°C 4.0 mJ Inductive Load TVj =125°C 4.9 mJ 200 A tpsc≤10µS , VGE=15V TVj=125°C,VCC=900V （ Per IGBT） 0.48 K /W Diode IF=50A , VGE=0V, TVj =25°C 1.65 V IF=50A , VGE=0V, TVj =125°C 1.65 V Reverse Recovery Time IF=50A , VR=600V 275 ns IRRM Max. Reverse Recovery Current diF/dt=-1200A/μs 50 A Erec Reverse Recovery Energy TVj =125°C 4.4 mJ RthJCD Junction-to-Case Thermal Resistance （ Per Diode） VF Forward Voltage trr 0.78 K /W MIMMG50W120XB6TN DIODE-RECTIFIER SECTOR ABSOLUTE MAXIMUM RATINGS Symbol TC=25°C unless otherwise specified Parameter Test Conditions Values Unit VRRM Repetitive Reverse Voltage TVj=25°C 1600 V IF(AV) Average Forward Current TC=80°C 50 A Non-Repetitive Surge TVj =45°C, t=10ms, 50Hz 350 A Forward Current TVj =45°C, t=8.3ms, 60Hz 385 A TVj =45°C, t=10ms, 50Hz 612 2 As TVj =45°C, t=8.3ms, 60Hz 741 A2s IFSM I2 t DIODE-RECTIFIER SECTOR ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit IF=50A , TVj =25°C 1.1 V IF=50A , TVj =125°C 1.05 V VF Forward Voltage IR Reverse Leakage Current RthJCD Junction-to-Case Thermal Resistance （ Per Diode） VR=1600V, TVj=25°C 50 µA VR=1600V, TVj=125°C 1 mA 0.68 K /W BRAKE-CHOPPER SECTOR ABSOLUTE MAXIMUM RATINGS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Values Unit 1200 V ±20 V TC=25°C 55 A TC=80°C 40 A tp=1ms 80 A 195 W TVj=25°C 1200 V TC=25°C 25 A TC=80°C 15 A tp=1ms 30 A TVj =125°C, t=10ms, VR=0V 60 A2s IGBT VCES Collector - Emitter Voltage VGES Gate - Emitter Voltage IC DC Collector Current ICM Repetitive Peak Collector Current Ptot Power Dissipation Per IGBT TVj=25°C Diode VRRM Repetitive Reverse Voltage IF(AV) Average Forward Current IFRM Repetitive Peak Forward Current 2 It MIMMG50W120XB6TN BRAKE-CHOPPER SECTOR ELECTRICAL AND THERMAL CHARACTERISTICS Symbol Parameter TC=25°C unless otherwise specified Test Conditions Min. Typ. Max. Unit 5.0 5.8 6.5 V IGBT VGE(th) VCE(sat) Gate - Emitter Threshold Voltage VCE=VGE, IC=1.5mA Collector - Emitter IC=40A, VGE=15V, TVj=25°C 1.8 V Saturation Voltage IC=40A, VGE=15V, TVj=125°C 2.05 V VCE=1200V, VGE=0V, TVj=25°C 0.25 µA VCE=1200V, VGE=0V, TVj=125°C 2 mA 400 nA ICES Collector Leakage Current IGES Gate Leakage Current RGint Integrated Gate Resistor Qge Gate Charge Cies Input Capacitance Cres Reverse Transfer Capacitance td(on) Turn - on Delay Time tr Rise Time td(off) Turn - off Delay Time tf Fall Time Eon Turn - on Energy Eoff Turn - off Energy ISC Short Circuit Current RthJC Junction-to-Case Thermal Resistance VCE=0V,VGE±15V, TVj=125°C VCE=600V, IC=40A , VGE=±15V VCE=25V, VGE=0V, f =1MHz -400 6 Ω 0.33 µC 2.5 nF 0.11 nF VCC=600V,IC=40A, TVj =25°C 90 ns RG =27Ω, TVj =125°C 90 ns VGE=±15V, TVj =25°C 30 ns Inductive Load TVj =125°C 50 ns VCC=600V,IC=40A, TVj =25°C 420 ns RG =27Ω, TVj =125°C 520 ns VGE=±15V, TVj =25°C 70 ns Inductive Load TVj =125°C 90 ns VCC=600V,IC=40A, TVj =25°C 4.1 mJ RG =27Ω, TVj =125°C 6.0 mJ VGE=±15V, TVj =25°C 3.1 mJ Inductive Load TVj =125°C 3.6 mJ 160 A tpsc≤10µS , VGE=15V TVj=125°C,VCC=900V （ Per IGBT） 0.62 K /W Diode IF=15A , VGE=0V, TVj =25°C 1.65 V IF=15A , VGE=0V, TVj =125°C 1.75 V Reverse Recovery Time IF=15A , VR=600V 150 ns IRRM Max. Reverse Recovery Current diF/dt=-400A/μs 15 A Erec Reverse Recovery Energy TVj =125°C 1.15 mJ RthJCD Junction-to-Case Thermal Resistance （ Per Diode） VF Forward Voltage trr 1.55 K /W MIMMG50W120XB6TN NTC SECTOR CHARACTERISTIC VALUES Symbol R25 TC=25°C unless otherwise specified Parameter Resistance Test Conditions Min. TC =25°C B25/50 MODULE CHARACTERISTICS Symbol Typ. Max. Unit 5 KΩ 3375 K TC=25°C unless otherwise specified Parameter Test Conditions Min. Typ. Max. Unit 150 °C TVj max Max. Junction Temperature TVj op Operating Temperature -40 125 °C Tstg Storage Temperature -40 125 °C Visol Insulation Test Voltage CTI Comparative Tracking Index Md Mounting Torque AC, t=1min 3000 V 250 Recommended（M5） Weight 2.5 5 300 100 N· m g 100 VGE =15V 80 TVj =25°C 60 IC (A) IC (A) 80 40 TVj =125°C 20 0 0 60 TVj =125°C 40 20 1.5 2.0 2.5 3.0 3.5 VCE（V） Figure1. Typical Output Characteristics IGBT-inverter 0.5 1.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE（V） Figure2. Typical Output Characteristics IGBT-inverter MIMMG50W120XB6TN 12 100 VCE =20V 10 TVj =25°C IC (A) 40 TVj =125°C Eon Eoff (mJ) 80 60 20 5 Eon 6 4 6 0 Eoff 30 40 20 RG（Ω） Figure4. Switching Energy vs. Gate Resistor IGBT-inverter 9 10 11 12 8 VGE（V） Figure3. Typical Transfer characteristics IGBT-inverter 20 7 0 10 120 VCE=600V RG=18Ω VGE=±15V TVj =125°C 16 100 80 12 IC (A) Eon Eoff (mJ) 8 2 0 Eon 8 60 RG=18Ω VGE=±15V TVj =125°C 40 Eoff 4 20 0 0 0 600 800 1000 1200 1400 VCE（V） Figure6. Reverse Biased Safe Operating Area IGBT-inverter 20 40 60 80 100 IC（A） Figure5. Switching Energy vs. Collector Current IGBT-inverter 0 200 400 8.0 100 80 IF=50A VCE=600V TVj =125°C Erec (mJ) 6.0 60 IF (A) VCE=600V IC=50A VGE=±15V TVj =125°C 4.0 40 TVj =125°C 2.0 20 TVj =25°C 0 0 1.0 2.0 2.5 1.5 VF（V） Figure7. Diode Forward Characteristics Diode -inverter 0.5 0 0 10 20 30 40 RG（Ω） Figure8. Switching Energy vs. Gate Resistor Diode -inverter MIMMG50W120XB6TN 1 8.0 RG=18Ω VCE=600V TVj =125°C IGBT ZthJC (K/W) Erec (mJ) 6.0 Diode 4.0 0.1 2.0 0 0 40 20 60 80 100 IF (A) Figure9. Switching Energy vs. Forward Current Diode-inverter 0.01 0.001 0.01 0.1 1 10 Rectangular Pulse Duration (seconds) Figure10. Transient Thermal Impedance of Diode and IGBT-inverter 100 80 VGE =15V 75 60 50 IC (A) IF (A) TVj =25°C TVj =125°C 40 TVj =125°C 25 20 TVj =25°C 0 0 0 0 0.6 0.8 1.0 1.2 1.4 VF（V） Figure11. Diode Forward Characteristics Diode- rectifier 0.2 0.4 1.0 100000 30 IFGE =25=15V A V VCE=600V TVj =125°C 25 20 10000 TVj =25°C 15 10 TVj =25°C R (Ω) IF (A) 1.5 2.0 2.5 3.0 3.5 VCE（V） Figure12. Typical Output Characteristics IGBT- brake chopper 0.5 TVj =125°C R TVj =125°C 1000 5 0 0 1.2 1.6 2.0 2.4 2.8 VF（V） Figure13. Diode Forward Characteristics Diode - brake chopper 0.4 0.8 100 0 20 60 80 100 120 140 160 TC（°C） Figure14. NTC Characteristics 40 MIMMG50W120XB6TN Figure15. Circuit Diagram Dimensions (mm) Figure16. Package Outline