DATA SHEET BC846BPDW/BC847BPDW SEMICONDUCTOR Dual General Purpose Transistors H 6 NPN/PNP Duals (Complimentary) 5 4 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications. 1 2 3 SOT–363/SC–88 Features CASE 419B STYLE 1 • Pb−Free Package is Available MAXIMUM RATINGS − NPN Symbol Value Unit Collector-Emitter Voltage Rating BC846 BC847 BC848 VCEO 65 45 30 V Collector-Base Voltage BC846 BC847 BC848 VCBO 80 50 30 V VEBO 6.0 V IC 100 mAdc Symbol Value Unit BC846 BC847 BC848 VCEO −65 −45 −30 V BC846 BC847 BC848 VCBO −80 −50 −30 V VEBO −5.0 V IC −100 mAdc Symbol Max Unit PD 380 250 mW 3.0 mW/°C RJA 328 °C/W TJ, Tstg −55 to +150 °C Emitter−Base Voltage Collector Current − Continuous (3) (2) Q2 Q1 (4) (1) (5) (6) MAXIMUM RATINGS − PNP Rating Collector-Emitter Voltage Collector-Base Voltage Emitter−Base Voltage Collector Current − Continuous See Table THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR−5 Board (Note 1) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature 1. FR−5 = 1.0 x 0.75 x 0.062 in. http://www.yeashin.com 1 REV.02 20120403 ELECTRICAL CHARACTERISTICS BC846BPDW/BC847BPDW ELECTRICAL CHARACTERISTICS (NPN) (TA = 25°C unless otherwise noted) Symbol Min Typ Max 65 45 30 − − − − − − 80 50 30 − − − − − − 80 50 30 − − − − − − 6.0 6.0 5.0 − − − − − − − − − − 15 5.0 BC846B, BC847B BC847C, BC848C − − 150 270 − − BC846B, BC847B BC847C, BC848C 200 420 290 520 475 800 Characteristic Unit OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = 10 mA) Collector −Emitter Breakdown Voltage (IC = 10 A, VEB = 0) Collector −Base Breakdown Voltage (IC = 10 A) Emitter −Base Breakdown Voltage (IE = 1.0 A) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847B Only BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = 30 V) (VCB = 30 V, TA = 150°C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = 10 A, VCE = 5.0 V) (IC = 2.0 mA, VCE = 5.0 V) hFE − Collector −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Collector −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) − − − − 0.25 0.6 V Base −Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) Base −Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) − − 0.7 0.9 − − V Base −Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) Base −Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580 − 660 − 700 770 mV fT 100 − − MHz Cobo − − 4.5 SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) http://www.yeashin.com 2 NF pF dB − − 10 REV.02 20120403 ELECTRICAL CHARACTERISTICS BC846BPDW/BC847BPDW ELECTRICAL CHARACTERISTICS (PNP) (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −65 −45 −30 − − − − − − −80 −50 −30 − − − − − − −80 −50 −30 − − − − − − −5.0 −5.0 −5.0 − − − − − − − − − − −15 −4.0 BC846B, BC847B BC847C, BC848C − − 150 270 − − BC846B, BC847B BC847C, BC848C 200 420 290 520 475 800 − − − − −0.3 −0.65 − − −0.7 −0.9 − − −0.6 − − − −0.75 −0.82 fT 100 − − MHz Output Capacitance (VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF Noise Figure (IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 k, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (IC = −10 mA) Collector −Emitter Breakdown Voltage (IC = −10 A, VEB = 0) Collector −Base Breakdown Voltage (IC = −10 A) Emitter −Base Breakdown Voltage (IE = −1.0 A) V(BR)CEO BC846 Series BC847 Series BC848 Series V V(BR)CES BC846 Series BC847 Series BC848 Series V V(BR)CBO BC846 Series BC847 Series BC848 Series V V(BR)EBO BC846 Series BC847 Series BC848 Series Collector Cutoff Current (VCB = −30 V) Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO V nA A ON CHARACTERISTICS DC Current Gain (IC = −10 A, VCE = −5.0 V) (IC = −2.0 mA, VCE = −5.0 V) hFE Collector −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VCE(sat) Base −Emitter Saturation Voltage (IC = −10 mA, IB = −0.5 mA) (IC = −100 mA, IB = −5.0 mA) VBE(sat) Base −Emitter On Voltage (IC = −2.0 mA, VCE = −5.0 V) (IC = −10 mA, VCE = −5.0 V) VBE(on) − V V V SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) http://www.yeashin.com 3 REV.02 20120403 DEVICE CHARACTERISTICS BC846BPDW/BC847BPDW TYPICAL NPN CHARACTERISTICS − BC846 TA = 25°C VCE = 5 V TA = 25°C 0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) 1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 5.0 V 0.4 0.2 0.2 VCE(sat) @ IC/IB = 10 0 10 100 1.0 IC, COLLECTOR CURRENT (mA) 0.1 0.2 0.2 0.5 2.0 TA = 25°C 1.6 20 mA 50 mA 100 mA 200 mA 1.2 IC = 10 mA 0.8 0.4 0 0.02 0.05 0.1 1.0 2.0 0.2 0.5 IB, BASE CURRENT (mA) 5.0 10 20 f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TA = 25°C 20 Cib 10 6.0 Cob 0.1 0.2 0.5 1.0 2.0 10 20 5.0 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 5. Capacitance http://www.yeashin.com 100 200 50 100 200 −1.4 −1.8 VB for VBE −55°C to 125°C −2.2 −2.6 −3.0 0.2 0.5 10 20 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 4. Base−Emitter Temperature Coefficient 40 2.0 50 −1.0 Figure 3. Collector Saturation Region 4.0 10 20 2.0 5.0 IC, COLLECTOR CURRENT (mA) Figure 2. “On” Voltage θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 1.0 500 VCE = 5 V TA = 25°C 200 100 50 20 1.0 5.0 10 50 100 IC, COLLECTOR CURRENT (mA) Figure 6. Current−Gain − Bandwidth Product 4 REV.02 20120403 DEVICE CHARACTERISTICS BC846BPDW/BC847BPDW TYPICAL PNP CHARACTERISTICS — BC846 TJ = 25°C VCE = −5.0 V TA = 25°C −0.8 V, VOLTAGE (VOLTS) hFE , DC CURRENT GAIN (NORMALIZED) −1.0 2.0 1.0 0.5 VBE(sat) @ IC/IB = 10 −0.6 VBE @ VCE = −5.0 V −0.4 −0.2 0.2 VCE(sat) @ IC/IB = 10 0 −0.2 −1.0 −2.0 −5.0 −10 −20 −50 −100 −200 IC, COLLECTOR CURRENT (AMP) −0.1 −0.2 −0.5 −50 −100 −200 −5.0 −10 −20 −1.0 −2.0 IC, COLLECTOR CURRENT (mA) Figure 8. “On” Voltage −2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 7. DC Current Gain −1.6 −1.2 IC = −10 mA −20 mA −50 mA −100 mA −200 mA −0.8 −0.4 TJ = 25°C 0 −0.02 −0.05 −0.1 −0.2 −0.5 −1.0 −2.0 IB, BASE CURRENT (mA) −5.0 −10 −20 −1.0 −1.4 −1.8 −2.6 −3.0 −0.2 f, T CURRENT−GAIN − BANDWIDTH PRODUCT C, CAPACITANCE (pF) TJ = 25°C Cib 10 8.0 Cob 4.0 2.0 −0.1 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 VR, REVERSE VOLTAGE (VOLTS) −50 −100 Figure 11. Capacitance http://www.yeashin.com −0.5 −1.0 −50 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mA) −100 −200 Figure 10. Base−Emitter Temperature Coefficient 40 6.0 −55°C to 125°C −2.2 Figure 9. Collector Saturation Region 20 VB for VBE 500 VCE = −5.0 V 200 100 50 20 −100 −1.0 −10 IC, COLLECTOR CURRENT (mA) Figure 12. Current−Gain − Bandwidth Product 5 REV.02 20120403 DEVICE CHARACTERISTICS BC846BPDW/BC847BPDW TYPICAL NPN CHARACTERISTICS − BC847 SERIES & BC848 SERIES 1.0 VCE = 10 V TA = 25°C 1.5 TA = 25°C 0.9 0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.8 0.6 0.4 VBE(sat) @ IC/IB = 10 0.7 VBE(on) @ VCE = 10 V 0.6 0.5 0.4 0.3 0.2 0.3 VCE(sat) @ IC/IB = 10 0.1 0.2 0.2 0.5 50 2.0 5.0 10 1.0 20 IC, COLLECTOR CURRENT (mAdc) 100 0 0.1 200 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mAdc) Figure 14. “Saturation” and “On” Voltages 2.0 θVB, TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 13. Normalized DC Current Gain TA = 25°C 1.6 IC = 200 mA 1.2 IC = IC = 10 mA 20 mA IC = 50 mA IC = 100 mA 0.8 0.4 0 0.02 10 0.1 1.0 IB, BASE CURRENT (mA) 20 1.0 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 Cib Cob 2.0 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 40 Figure 17. Capacitances http://www.yeashin.com f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) C, CAPACITANCE (pF) TA = 25°C 3.0 1.0 100 Figure 16. Base−Emitter Temperature Coefficient 10 5.0 10 1.0 IC, COLLECTOR CURRENT (mA) 0.2 Figure 15. Collector Saturation Region 7.0 50 70 100 400 300 200 VCE = 10 V TA = 25°C 100 80 60 40 30 20 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mAdc) 30 Figure 18. Current−Gain − Bandwidth Product 6 REV.02 20120403 50 DEVICE CHARACTERISTICS BC846BPDW/BC847BPDW TYPICAL PNP CHARACTERISTICS — BC847 SERIES & BC848 SERIES −1.0 1.5 TA = 25°C −0.9 VCE = −10 V TA = 25°C VBE(sat) @ IC/IB = 10 −0.8 V, VOLTAGE (VOLTS) hFE , NORMALIZED DC CURRENT GAIN 2.0 1.0 0.7 0.5 −0.7 VBE(on) @ VCE = −10 V −0.6 −0.5 −0.4 −0.3 −0.2 0.3 VCE(sat) @ IC/IB = 10 −0.1 0.2 −0.2 −0.5 −1.0 −2.0 −5.0 −10 −20 −50 IC, COLLECTOR CURRENT (mAdc) 0 −0.1 −0.2 −100 −200 1.0 −2.0 TA = 25°C −1.6 −1.2 −0.8 IC = −10 mA IC = −50 mA IC = −200 mA IC = −100 mA IC = −20 mA −0.4 0 −0.02 −55°C to +125°C 1.2 1.6 2.0 2.4 2.8 −10 −20 −0.1 −1.0 IB, BASE CURRENT (mA) −0.2 10 Cib 7.0 TA = 25°C 5.0 Cob 3.0 2.0 1.0 −0.4 −0.6 −1.0 −2.0 −4.0 −6.0 −10 −10 −1.0 IC, COLLECTOR CURRENT (mA) −100 Figure 22. Base−Emitter Temperature Coefficient −20 −30 −40 f, T CURRENT−GAIN − BANDWIDTH PRODUCT (MHz) Figure 21. Collector Saturation Region C, CAPACITANCE (pF) −100 −50 Figure 20. “Saturation” and “On” Voltages θVB , TEMPERATURE COEFFICIENT (mV/ °C) VCE , COLLECTOR−EMITTER VOLTAGE (V) Figure 19. Normalized DC Current Gain −0.5 −1.0 −2.0 −5.0 −10 −20 IC, COLLECTOR CURRENT (mAdc) 400 300 200 150 VCE = −10 V TA = 25°C 100 80 60 40 30 20 −0.5 −1.0 −2.0 −3.0 −5.0 −10 −20 −30 −50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc) Figure 23. Capacitances Figure 24. Current−Gain − Bandwidth Product http://www.yeashin.com 7 REV.02 20120403 DEVICE CHARACTERISTICS BC846BPDW/BC847BPDW 1.0 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 ZJA(t) = r(t) RJA RJA = 328°C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RJC(t) P(pk) t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.001 0 10 1.0 100 1.0k 10k 100k 1.0M t, TIME (ms) Figure 25. Thermal Response The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 26 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 25. At high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the secondary breakdown. −200 IC, COLLECTOR CURRENT (mA) 1s 3 ms −100 TA = 25°C −50 BC558 BC557 BC556 −10 −5.0 −2.0 −1.0 TJ = 25°C BONDING WIRE LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT −5.0 −10 −30 −45 −65 −100 VCE, COLLECTOR−EMITTER VOLTAGE (V) Figure 26. Active Region Safe Operating Area http://www.yeashin.com 8 REV.02 20120403 PACKAGE OUTLINE & DIMENSIONS BC846BPDW/BC847BPDW SC-88/SOT-363 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A G DIM 6 5 4 - B- S 1 2 3 0.2 (0.008) M B M D6PL N J A B C D G H J K N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 C PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4.EMITTER 2 5. BASE 2 6.COLLECTOR 1 K H 0.4 mm (min) 0.65 mm 0.65 mm 0.5 mm (min) 1.9 mm http://www.yeashin.com 9 REV.02 20120403