NSTB1005DXV5T1, NSTB1005DXV5T5 Preferred Devices Dual Common Base−Collector Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 3 1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. The NSTB1005DXV5T1 contains two complementary BRT devices are housed in the SOT−553 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch Tape and Reel • Lead Free R2 Q2 R2 Q1 R1 4 5 5 1 SOT−553 CASE 463B MARKING DIAGRAM MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, − minus sign for Q1 (PNP) omitted) 5 Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc Rating 2 UC D Collector Current IC 100 mAdc Symbol Max Unit 357 (Note 1) 2.9 (Note 1) mW mW/°C 350 (Note 1) °C/W 1 UC = Specific Device Code D = Date Code THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25°C Derate above 25°C Thermal Resistance − Junction-to-Ambient Junction and Storage Temperature PD RJA Symbol Max Unit 500 (Note 1) 4.0 (Note 1) mW mW/°C RJA 250 (Note 1) °C/W TJ, Tstg −55 to +150 PD °C ORDERING INFORMATION Device Package Shipping† NSTB1005DXV5T1 SOT−553 4 mm pitch 4000/Tape & Reel NSTB1005DXV5T5 SOT−553 2 mm pitch 8000/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. 1. FR−4 @ Minimum Pad Semiconductor Components Industries, LLC, 2004 March, 2004 − Rev. 0 1 Publication Order Number: NSTB1005DXV5/D NSTB1005DXV5T1, NSTB1005DXV5T5 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Min Typ Max Unit Collector−Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector−Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc Emitter−Base Cutoff Current IEBO − − 0.1 mAdc Collector−Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc Collector−Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 80 140 − VCE(sat) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 − − Vdc R1 32.9 47 61.1 k R1/R2 0.8 1.0 1.2 Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCB = 50 V, IB = 0) ICEO − − 500 nAdc Emitter-Base Cutoff Current IEBO − − 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 A, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 80 140 − VCE(SAT) − − 0.25 Vdc Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k) VOL − − 0.2 Vdc Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k) VOH 4.9 − − Vdc k Characteristic Q1 TRANSISTOR: PNP − OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain Collector−Emitter Saturation Voltage (IC = 10 mA, IE = 0.3 mA) Input Resistor Resistor Ratio Q2 TRANSISTOR: NPN − OFF CHARACTERISTICS (VEB = 6.0, IC = 5.0 mA) ON CHARACTERISTICS DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector−Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Input Resistor R1 33 47 61 Resistor Ratio R1/R2 0.8 1.0 1.2 PD , POWER DISSIPATION (MILLIWATTS) 250 200 150 100 50 0 −50 RJA = 833°C/W 0 50 100 TA, AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve http://onsemi.com 2 150 NSTB1005DXV5T1, NSTB1005DXV5T5 1000 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − PNP TRANSISTOR TA=−25°C 0.1 25°C 75°C 0.01 0 20 25°C 100 10 −25°C 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 50 1 100 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25°C 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=−25°C 10 1 0.1 0.01 0.001 50 100 VO = 5 V 0 1 2 6 7 3 4 5 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=−25°C 25°C 75°C 1 0 10 8 9 Figure 5. Output Current versus Input Voltage 10 0.1 100 25°C 75°C Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75°C IC, COLLECTOR CURRENT (mA) 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 3 10 NSTB1005DXV5T1, NSTB1005DXV5T5 10 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — NPN TRANSISTOR 1 25°C TA=−25°C 75°C 0.1 0.01 0 TA=75°C 25°C −25°C 100 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 7. VCE(sat) versus IC 1 100 IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25°C 75°C 0.6 TA=−25°C 10 1 0.1 0.01 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 100 VO = 0.2 V TA=−25°C 10 25°C 75°C 1 0.1 0 10 8 10 Figure 10. Output Current versus Input Voltage Figure 9. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) Figure 8. DC Current Gain f = 1 MHz IE = 0 mA TA = 25°C 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 4 NSTB1005DXV5T1, NSTB1005DXV5T5 PACKAGE DIMENSIONS SOT−553 XV5 SUFFIX 5−LEAD PACKAGE CASE 463B−01 ISSUE A A −X− 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. C K 4 1 2 B −Y− 3 D G J 5 PL 0.08 (0.003) DIM A B C D G J K S S M X Y MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.35 0.0531 1.0 0.0394 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 NSTB1005DXV5T1, NSTB1005DXV5T5 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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