1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Description The HY23V16202 high performance read only memory is organized either as 2,097,152 x 8 bit (byte mode) or as 1,048,576 x 16 bit(word mode) followed by BHE mode select. The low power feature allows the battery operation. The large size of 16M bit memory density is ideal for character generator, data or program memory in micro-processor application. The HY23V16202 is packaged 42pin DIP , 44 pin SOP, 44 pin TSOP-II or 48 pin TSOP-I. Pin Description Key features • Switchable Organization Byte Mode : 2,097,152 X 8 bit Word Mode : 1,048,576 X 16 bit • Single 3.3V power supply operation • Access Time : 100/120ns (Max) • Standby Current : 50 (Max) • Operating Current : 35 (Max) • TTL compatible inputs and outputs • 3-State outputs for wired-OR expansion • Word or Byte switchable by BHE pin • Fully static operation • Package HY23V16202D : 42pin Plastic DIP(600 mil) HY23V16202S : 44pin Plastic SOP(500mil) HY23V16202T : 44pin Plastic TSOP-II(400mil) HY23V16202M : 48pin Plastic TSOP-I(12x20mm) HY23V16202F : 48pin Plastic TSOP-I(12x20mm) Pin A0~A19 Address inputs Q0~Q14 Data Outputs Q15/A-1 Output Q15(Word Mode)/ LSB Address(Byte Mode) BHE Byte High Enable input (Word/Byte selection) CEB* Chip Enable input OEB* Output Enable input VCC Power supply VSS Ground NC No Connection * User selectable polarity Pin Configuration A18 1 42 A19 A17 2 3 41 40 A8 4 5 6 39 38 37 A9 A10 A11 A12 7 36 A13 A7 A6 A5 A4 A3 A2 8 35 A14 A1 A0 CEB 9 10 34 33 A15 A16 BHE VSS OEB Q0 11 12 42DIP 13 14 32 31 30 VSS Q15/A-1 29 Q7 Q8 15 28 Q14 Q1 Q9 16 17 27 26 Q6 Q13 Q2 Q10 Q3 Q11 18 19 25 24 20 23 21 22 HY23V16202D Rev0 Page 1 of 8 Function Q5 Q12 Q4 VCC NC A18 1 44 2 3 4 43 42 41 5 6 40 39 A3 7 8 38 37 A2 9 36 A14 A1 A0 CEB 10 35 A15 A16 BHE A17 A7 A6 A5 A4 VSS OEB 11 12 44SOP 13 34 33 32 Q0 14 15 31 30 Q8 16 29 NC A19 A8 A9 A10 A11 A12 A13 VSS Q15/A-1 Q7 Q14 Q1 Q9 17 18 28 27 Q6 Q13 Q2 19 26 Q5 Q10 Q3 Q11 20 21 25 24 22 23 Q12 Q4 VCC HY23V16202S NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CEB VSS OEB Q0 Q8 Q1 Q9 Q2 Q10 Q3 Q11 1 44 2 43 3 42 4 41 5 40 6 39 7 38 8 37 9 36 10 35 34 11 12 44TSOP 33 13 32 14 31 15 30 16 29 17 28 18 27 19 26 20 25 21 24 22 23 HY23V16202T NC A19 A8 A9 A10 A11 A12 A13 A14 A15 A16 BHE VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 BHE A16 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CEB 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 38 12 13 48TSOP-I (ROM TYPE) 37 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 A15 A14 A13 A12 A11 A10 A9 A8 A19 NC NC NC NC NC NC A18 A17 A7 A6 A5 A4 A3 A2 A1 VSS VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC VCC NC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OEB VSS VSS HY23V16202M 1 48 2 47 3 46 4 45 5 44 6 43 7 42 8 41 9 40 10 39 11 12 13 38 48TSOP-I (FLASH TYPE) 37 36 14 35 15 34 16 33 17 32 18 31 19 30 20 29 21 28 22 27 23 26 24 25 A16 BHE VSS Q15/A-1 Q7 Q14 Q6 Q13 Q5 Q12 Q4 VCC Q11 Q3 Q10 Q2 Q9 Q1 Q8 Q0 OEB VSS CEB A0 HY23V16202F Block Diagram A0~A19 X-PREDEC Y-PREDEC X-DECODER ADDRESS BUFFER MEMORY ARRAY 16MBIT ROM CELL Y-DECODER SENSE AMP CEB OEB BHE CONTROL CIRCUIT OUTPUT CIRCUIT Q0~Q15/A-1 Rev0 Page 2 of 8 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Absolute Maximum Ratings Symbol Parameter Rating Unit TA Ambient Operating Temperature -10 ~ 80 O C TSTG Storage Temperature -55 ~ 150 O C VCC Supply Voltage to Ground Potential -0.3 ~ 4.5 V VOUT Output Voltage -0.3~Vcc+0.3 V VIN Input Voltage -0.3~Vcc+0.3 V Stress above those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only. Functional operation of this device at these or any other conditions above those indicated in the operational sections of this specification is not implied and exposure to absolute maximum rating conditions for extended periods may affect device reliability. Recommended DC Operating Conditions(VCC=3.3·0.3V, TA=0~70O C ) Symbol Parameter Min Typ Max Unit Vcc Supply Voltage 3.0 3.3 3.6 V Vss Supply Voltage 0 0 0 V VIH Input High Voltage 2.2 Vcc+0.3 V VIL Input Low Voltage -0.3 0.8 V DC Electrical Characteristics(VCC=3.3·0.3V, TA=0~70 O C ) Symbol Parameter Condition VOH Output High Voltage IOH=-0.4mA VOL Output Low Voltage IOL=2.1mA IIL Input Leakage Current VIN=0V to VCC IOL Output Leakage Current VOUT=0V to VCC ICC Operating Supply Current CEB=OEB=VIL All Output Open (tRC=100ns) Min Typ Max 2.4 Unit V 0.4 V 10 uA 10 uA 35 mA ISB1 Standby Current(TTL) CEB=VIH, all Output Open 500 uA ISB2 Standby Current(CMOS) CEB=VCC, all Output Open 50 uA Rev0 Page 3 of 8 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Capacitance(TA=25O C , f=1.0MHz) Symbol Parameter Condition Min Max Unit CI Input Capacitance VIN = 0V 10 pF CO Output Capacitance VOUT = 0V 10 pF Capacitance is periodically sampled and not 100% tested Function Table MODE CEB/CE Standby OEB/OE BHE X X High-Z H Data Out H/L 16bit Operating L/H Q8 ~ Q14 Q15 ~A-1 L L High-Z Active Data output (upper 8bit) Output Disable H/L POWER Standby Data output (lower 8bit) L/H 8bit Operating Q0 ~ Q7 X H High-Z X AC Characteristics(VCC=3.3·0.3V, TA=0~70 O C ) 100ns Symbol 120ns Parameter Unit Min Max Min Max tRC Read cycle time tACE Chip enable access time 100 120 ns tAA Address access time 100 120 ns tAOE Output enable access time 50 60 ns tOH Output hold time from address change tHZ Output or chip disable to output High-Z tLZ Output or chip Enable to output Low-Z 100 AC Test Condition • Input pulse level • Input rise and fall time • Input and output timing level • Output load Rev0 Page 4 of 8 0.4V to 2.4V 10ns 1.5V 1 TTL gate and CL=100pF 0 ns 0 20 10 ns 120 20 10 ns ns 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Timing Waveforms Word Mode(BHE=VIH) tRC ADD A0~A19 ADD1 ADD2 tHZ tACE CEB:ACTIVE LOW CE/CEB CE:ACTIVE HIGH tAOE tAA OEB:ACTIVE LOW OE/OEB OE:ACTIVE HIGH tLZ tLZ Q0~Q15 tOH VALID Byte Mode(BHE=VIL) VALID tRC ADD A0~A19 A-1 ADD1 ADD2 tHZ tACE CEB:ACTIVE LOW CE/CEB CE:ACTIVE HIGH tAOE tAA OEB:ACTIVE LOW OE/OEB OE:ACTIVE HIGH tLZ Q0~Q7 Q8~Q15 Rev0 Page 5 of 8 tLZ tOH VALID HIGH-Z VALID 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Package Dimension Unit : mm 44SOP O 0~10 0.730 MIN 1.030 MAX 16.050 BSC 12.800 MAX 12.400 MIN 28.000 MIN 28.550 MAX 0.090 MIN 0.250 MAX 2.500 MIN 2.900 MAX 0.250 MIN 1.270 0.450 MAX BSC 3.100 MAX 42DIP O 0~15 50.292 MIN 15.875 MAX 15.240 MIN 14.732 MAX 12.319 MIN 53.213 MAX 0.762 MIN 1.778 MAX 0.203 MIN 0.381 MAX 0.381 MIN 5.080 MAX 0.356 MIN 0.559 MAX Rev0 Page 6 of 8 2.540 BSC 2.540 MIN 4.572 MAX 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Unit : mm 44TSOP-II O 0~8 #1 0.950 MIN 1.050 MAX 1.200 MAX 0.260 MIN 0.450 MAX Rev0 Page 7 of 8 0.800 BSC 0.400 MIN 0.600 MAX 0.050 MIN 0.150 MAX BASIC BASIC 10.160 #44 11.760 18.410 BASIC 0.120 MIN 0.210 MAX 1MX16/2MX8 BIT CMOS MASK ROM HY23V16202 Unit : mm 48TSOP-I 0~8 0.170 MIN 0.100 MIN 1.050 MAX 0.050 MIN 0.150 MAX 1.200 MAX 0.950 MIN 0.200 MAX 11.910 MIN 12.120 MAX 0.700 MAX 0.400 MIN 18.300 MIN 18.500 MAX 0.270 MAX 20.150 MAX 19.850 MIN 0.500 BSC Rev0 Page 8 of 8 O