NTMFS4933N Power MOSFET 30 V, 210 A, Single N−Channel, SO−8 FL Features • Low RDS(on) to Improve Conduction and Overall Efficiency • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant Applications • OR−ing FET, Power Load Switch, Motor Control • Refer to Application Note AND8195/D for Mounting Information End Products V(BR)DSS RDS(ON) MAX 1.2 mW @ 10 V 30 V D (5,6) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V 34 A TA = 25°C Continuous Drain Current RqJA (Note 1) ID TA = 100°C S (1,2,3) Power Dissipation RqJA (Note 1) TA = 25°C PD 2.74 W Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C ID 43 A Power Dissipation RqJA ≤ 10 s (Note 1) Continuous Drain Current RqJA (Note 2) TA = 25°C Steady State TA = 25°C PD ID 7.3 20 12.5 PD 1.06 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 210 A TC =100°C 132 TC = 25°C PD 104 W TA = 25°C, tp = 10 ms IDM 400 A TJ, TSTG −55 to +150 °C Source Current (Body Diode) IS 95 A dV/dt 4.4 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL = 58 Apk, L = 0.3 mH, RG = 25 W) EAS 504 mJ TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm2 [1 oz]) © Semiconductor Components Industries, LLC, 2012 May, 2012 − Rev. 8 1 SO−8 FLAT LEAD CASE 488AA STYLE 1 A Y W ZZ S S S G D 4933N AYWZZ D D = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION Drain to Source DV/DT Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) D A TA = 25°C Operating Junction and Storage Temperature MARKING DIAGRAM W Power Dissipation RqJA (Note 2) Pulsed Drain Current N−CHANNEL MOSFET 27 TA = 100°C Power Dissipation RqJC (Note 1) G (4) 21.5 TA = 100°C 210 A 2.0 mW @ 4.5 V • Server, UPS, Fault−Tolerant Power Systems, Hot Swap Parameter ID MAX 1 Device Package Shipping† NTMFS4933NT1G SO−8 FL (Pb−Free) 1500 / Tape & Reel NTMFS4933NT3G SO−8 FL (Pb−Free) 5000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTMFS4933N/D NTMFS4933N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) Parameter RqJC 1.1 Junction−to−Ambient – Steady State (Note 3) RqJA 45.6 Junction−to−Ambient – Steady State (Note 4) RqJA 117.5 Junction−to−Ambient – (t ≤ 10 s) (Note 3) RqJA 17.13 Unit °C/W 3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size. (Cu area = 50 mm2 [1 oz]) ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 15 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.6 4.0 VGS = 10 V VGS = 4.5 V Forward Transconductance 1.2 gFS ID = 30 A 0.9 ID = 15 A 0.9 ID = 30 A 1.5 ID = 15 A 1.5 VDS = 1.5 V, ID = 15 A 82 mV/°C 1.2 2.0 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance 10930 VGS = 0 V, f = 1 MHz, VDS = 15 V 3230 CRSS 92 Total Gate Charge QG(TOT) 62.1 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Total Gate Charge VGS = 4.5 V, VDS = 15 V; ID = 30 A 15.7 27 pF nC 10.1 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 30 A 148 nC SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 31 tr td(OFF) VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 33 47 23 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 ns NTMFS4933N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) 20 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 26 ns 88.6 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.82 TJ = 125°C 0.68 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.1 V 73.5 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 35.9 ns 37.6 QRR 117 nC Source Inductance LS 0.50 nH Drain Inductance LD 0.005 nH Gate Inductance LG 1.84 nH Gate Resistance RG PACKAGE PARASITIC VALUES TA = 25°C 1.1 5. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 6. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 2.2 W NTMFS4933N TYPICAL CHARACTERISTICS 3.8 V to 10 V 200 180 220 TJ = 25°C 3.4 V VGS = 3.2 V 140 3.0 V 120 100 2.8 V 80 60 2.6 V 40 2.4 V 2.2 V 20 0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 160 0 1 2 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VDS = 10 V 200 180 160 140 120 100 TJ = 125°C 80 60 TJ = 25°C 40 TJ = −55°C 20 0 4 1 0.0027 0.0023 3.5 4 0.0016 VGS = 4.5 V 0.0015 0.0019 0.0014 0.0017 0.0013 0.0015 0.0012 0.0013 0.0011 0.0011 VGS = 10 V 0.0010 0.0009 0.0009 3.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 0.0008 20 40 60 80 100 120 140 160 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 VGS = 0 V ID = 30 A VGS = 10 V IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 TJ = 25°C 0.0017 0.0021 2 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 2.5 0.0018 ID = 30 A TJ = 25°C 0.0025 0.0007 2 Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 1.5 −50 −25 0 25 50 75 100 125 150 10000 TJ = 150°C TJ = 125°C 1000 TJ = 85°C 100 10 5 TJ, JUNCTION TEMPERATURE (°C) 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 4 30 NTMFS4933N Ciss C, CAPACITANCE (pF) 13000 12000 11000 10000 9000 8000 7000 6000 5000 4000 3000 2000 1000 0 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS TJ = 25°C VGS = 0 V Coss Crss 0 5 10 15 20 25 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 30 10 9 7 5 4 QGD 2 VDD = 15 V VGS = 10 V ID = 30 A 1 0 0 20 40 60 80 100 120 QG, TOTAL GATE CHARGE (nC) 140 30 ID, DRAIN CURRENT (A) VGS = 0 V VDD = 15 V ID = 15 A VGS = 10 V td(off) tf 100 tr td(on) 10 1 10 15 TJ = 25°C 10 5 0.5 0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage vs. Current 10 ms 100 ms 10 1 ms 10 ms 0 V ≤ VGS ≤ 20 V SINGLE PULSE TA = 25°C TJ = 150°C 0.01 0.01 TJ = 125°C RG, GATE RESISTANCE (W) 100 0.1 20 Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 1 25 0 0.4 100 100 ms RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT dc 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 1000 t, TIME (ns) QGS 3 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 10000 ID, DRAIN CURRENT (A) QT 6 Figure 7. Capacitance Variation 1 TJ = 25°C 8 100 520 480 440 400 360 320 280 240 200 160 120 80 40 0 ID = 58 A 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 1.0 NTMFS4933N TYPICAL CHARACTERISTICS 100 D = 0.5 0.2 0.1 10 0.02 0.01 1 0.1 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, TIME (s) Figure 13. Thermal Response GFS (S) r(t) (°C/W) 0.05 260 240 220 200 180 160 140 12 100 80 60 40 20 0 0 10 20 30 40 50 ID (A) 60 70 Figure 14. GFS vs. ID http://onsemi.com 6 80 90 100 100 1000 NTMFS4933N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE G 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 3 q E 2 1 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q c A1 4 TOP VIEW C 3X e 0.10 C SEATING PLANE DETAIL A A STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 0.10 C SIDE VIEW SOLDERING FOOTPRINT* DETAIL A 3X 8X 0.10 C A B 0.05 c 4X e/2 1 4 0.965 K G 0.750 1.000 L PIN 5 (EXPOSED PAD) 4X 1.270 b MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 BSC 4.50 4.90 5.10 3.50 −−− 4.22 6.15 BSC 5.50 5.80 6.10 3.45 −−− 4.30 1.27 BSC 0.51 0.61 0.71 1.20 1.35 1.50 0.51 0.61 0.71 0.05 0.17 0.20 3.00 3.40 3.80 0_ −−− 12 _ 1.330 2X 0.905 2X E2 L1 M 0.495 4.530 3.200 0.475 D2 2X BOTTOM VIEW 1.530 4.560 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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