fax id: 3023 1CY 27H0 10 CY27H010 128K x 8 High-Speed CMOS EPROM Features try-standard 32-pin, 600-mil DIP, LCC, PLCC, and TSOP-I packages. These devices offer high-density storage combined with 40-MHz performance. The CY27H010 is available in windowed and opaque packages. Windowed packages allow the device to be erased with UV light for 100% reprogrammability. • CMOS for optimum speed/power • High speed — tAA = 25 ns max. (commercial) — tAA = 35 ns max. (military) • Low power — 275 mW max. • • • • • — Less than 85 mW when deselected Byte-wide memory organization 100% reprogrammable in thewindowed package EPROM technology Capable of withstanding >2001V static discharge Available in — 32-pin PLCC — 32-pin TSOP-I — 32-pin, 600-mil plastic or hermetic DIP — 32-pin hermetic LCC The CY27H010 is equipped with a power-down chip enable (CE) input and output enable (OE). When CE is deasserted, the device powers down to a low-power stand-by mode. The OE pin three-states the outputs without putting the device into stand-by mode. While CE offers lower power, OE provides a more rapid transition to and from three-stated outputs. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The EPROM cell requires only 12.75 V for the supervoltage and low programming current allows for gang programming. The device allows for each memory location to be tested 100%, because each location is written to, erased, and repeatedly exercised prior to encapsulation. Each device is also tested for AC performance to guarantee that the product will meet DC and AC specification limits after customer programming. The CY27H010 is read by asserting both the CE and the OE inputs. The contents of the memory location selected by the address on inputs A16–A0 will appear at the outputs O7–O0. Functional Description The CY27H010 is a high-performance, 1-megabit CMOS EPROM organized in 128 Kbytes. It is available in indus- Logic Block Diagram Pin Configurations DIP Top View A0 O0 A1 VPP A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 O0 O1 O2 GND A2 O1 A3 PROGRAMMABLE ARRAY A4 O2 A5 O3 A6 A7 A8 MULTIPLEXER ADDRESS DECODER O4 A9 O5 A10 A11 A12 O6 POWER DOWN A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC PGM NC A14 A13 A8 A9 A11 OE A10 CE O7 O6 O5 O4 O3 H010–2 LCC/PLCC Top View O7 A14 A15 A16 A7 A6 A5 A4 A3 A2 A1 A0 O0 CE OE OUTPUT ENABLE DECODER H010–1 4 3 2 1 32 31 30 29 5 28 6 27 7 26 8 25 9 24 10 23 11 22 12 21 13 14151617 181920 A14 A13 A8 A9 A11 OE A10 CE O7 H010–3 Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 August 1994 – Revised March 1997 CY27H010 Pin Configurations (continued) TSOP Top View A11 A9 A8 A13 A14 NC PGM VCC VPP A16 A15 A12 A7 A6 A5 A4 1 2 32 31 30 3 4 5 6 7 29 28 27 26 25 24 23 22 21 20 19 18 17 8 9 10 11 12 13 14 15 16 OE/VFY A10 CE O7 O6 O5 O4 O3 GND O2 O1 O0 A0 A1 A2 A3 H010–4 Selection Guide 27H010–25 27H010–30 27H010–35 25 30 35 30 30 40 Maximum Access Time (ns) CE Access Time (ns) Com’l CE Access Time (ns) Mil OE Access Time (ns) Com’l OE Access Time (ns) Mil ICC[1] (mA) Power Supply Current Com’l ISB[2] (mA) Stand-by Current Com’l 40 12 20 20 20 75 75 15 15 Mil 50 85 Mil 15 25 Maximum Ratings UV Erasure................................................... 7258 Wsec/cm 2 (Above which the useful life may be impaired. For user guidelines, not tested.) Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) Storage Temperature ................................. –65°C to +150°C Ambient Temperature with Power Applied............................................. –55°C to +125°C Latch-Up Current ..................................................... >200 mA Supply Voltage to Ground Potential ............... –0.5V to +7.0V Operating Range DC Voltage Applied to Outputs in High Z State ............................................... –0.5V to +5.5V Range Ambient Temperature VCC DC Input Voltage............................................ –3.0V to +7.0V Commercial 0°C to +70°C 5V ± 10% Transient Input Voltage ................................–3.0V for <20 ns Industrial[3] –40°C to +85°C 5V ± 10% DC Program Voltage .....................................................13.0V Military[4] –55°C to +125°C 5V ± 10% Note: 1. VCC = Max., IOUT = 0 mA, f=10 MHz. 2. VCC = Max., CE = VIH. 3. Contact a Cypress representative for industrial temperature range specification. 4. TA is the “instant on” case temperature. 2 CY27H010 Electrical Characteristics Over the Operating Range[5, 6] 27H010–25 27H010–30 Parameter Description Test Conditions Min. Max. VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA VOL Output LOW Voltage VIH Input HIGH Level VCC = Min., IOL = 12.0 mA Guaranteed Input Logical HIGH Voltage for All Inputs VIL Input LOW Level Guaranteed Input Logical LOW Voltage for All Inputs IIX Input Leakage Current GND < VIN < VCC –10 +10 IOZ Output Leakage Current GND < VOUT < VCC, Output Disable –10 +10 ICC Power Supply Current VCC=Max., IOUT=0 mA, f=10 MHz Com’l VCC=Max., CE = VIH Com’l ISB Stand-By Current 27H010–35 Min. 2.4 0.45 2.0 Max. Unit 2.4 VCC+0.5 V 0.45 V VCC+0.5 V 0.8 V –10 +10 µA –10 +10 µA 50 mA 85 mA 15 mA 25 mA 2.0 0.8 75 Mil 15 Mil Capacitance[6] Parameter Description CIN Input Capacitance COUT Output Capacitance Test Conditions Max. Unit 10 pF 12 pF TA = 25°C, f = 1 MHz, VCC = 5.0V Notes: 5. See the last page of this specification for Group A subgroup testing information. 6. See Introduction to CMOS PROMs in this Data Book for general information on testing. AC Test Loads and Waveforms R1 318 Ω R1 318 Ω 5V ALL INPUT PULSES 5V OUTPUT R2 197Ω 30 pF INCLUDING JIG AND SCOPE 3.0V 90% OUTPUT R2 197Ω 5 pF Equivalent to: OUTPUT GND 10% ≤ 3 ns INCLUDING JIG AND SCOPE (a) 90% 10% (b) ≤ 3 ns H010–5 H010–6 THÉVENIN EQUIVALENT 121Ω 1.91V Switching Characteristics Over the Operating Range 27H010–25 Parameter Description Min. Max. 27H010–30 Min. Max. 27H010–35 Min. Max. Unit tAA Address to Output Valid 25 30 35 ns tOE OE Active to Output Valid 12 20 20 ns tHZOE OE Inactive to High Z 12 20 20 ns 3 CY27H010 Switching Characteristics Over the Operating Range (continued) 27H010–25 Parameter Description Min. Max. 27H010–30 Min. 27H010–35 Max. Min. Max. Unit tCE CE Active to Output Valid 30 30 40 ns tHZCE CE Inactive to High Z 12 20 20 ns tPU CE Active to Power-Up tPD CE Inactive to Power-Down tOH Output Data Hold 0 0 0 30 0 ns 35 40 0 ns 0 ns Switching Waveform ICC tPD tPU CE OE ADDR A A0 – A16 tAA ADDR B tAA tHZOE tCE O0 – O7 tOE tOH DATA A DATA B tHZCE DATA B H010–7 Erasure Characteristics nent damage may result if the EPROM is exposed to high-intensity UV light for an extended period of time. 7258 Wsec/cm2 is the recommended maximum dosage. Wavelengths of light less than 4000 Angstroms begin to erase the CY27H010 in the windowed package. For this reason, an opaque label should be placed over the window if the EPROM is exposed to sunlight or fluorescent lighting for extended periods of time. Programming Modes Programming support is available from Cypress as well as from a number of third-party software vendors. For detailed programming information, including a listing of software packages, please see the PROM Programming Information located at the end of this section. Programming algorithms can be obtained from any Cypress representative. The recommended dose of ultraviolet light for erasure is a wavelength of 2537 Angstroms for a minimum dose (UV intensity multiplied by exposure time) of 25 Wsec/cm2. For an ultraviolet lamp with a 12 mW/cm2 power rating, the exposure time would be approximately 35 minutes. The CY27H010 needs to be within 1 inch of the lamp during erasure. Perma- 4 CY27H010 Table 1. Programming Electrical Characteristics Parameter Description Min. Max. Unit 12.5 13 V 50 mA Programming Input Voltage HIGH 3.0 VCC V VILP Programming Input Voltage LOW –0.5 0.4 V VCCP Programming VCC 6.0 6.5 V VPP Programming Power Supply IPP Programming Supply Current VIHP Table 2. Mode Selection Pin Function[7] Mode CE OE PGM VPP A0 A9 Data VIL VIL X X A0 A9 Dout X VIH X X X X High Z Stand-by VIH X X X X X High Z Program VILP VIHP VILP VPP A0 A9 Din Program Verify VILP VILP VIHP VPP A0 A9 Dout VIHP X X VPP X X High Z Read Output Disable Program Inhibit Signature Read (MFG)[9] Signature Read (DEV)[9] VIL VIL VIL X VIL X Notes: 7. X can be V IL or VIH. 8. VHV=12V±0.5V 9. A1 − A8 and A10 − A16 = V IL 5 VIH VIH VIL VIH [8] 34H [8] 1DH VHV VHV CY27H010 Typical DC and AC Characteristics 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 1.1 1.0 0.9 VCC =5.5V TA =25°C 0.8 0.7 0.6 0.5 0.0 1.25 50 100 150 200 CLOCK PERIOD (ns) OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE NORMALIZED SUPPLY CURRENT vs. SUPPLY VOLTAGE NORMALIZED SUPPLY CURRENT vs. CYCLE PERIOD 1.25 1.15 1.1 f = 10 MHz TA =25°C 1.05 1.0 0.95 0.9 4 250 4.5 5 5.5 6 0.85 0.8 –100 –50 0 50 100 150 AMBIENT TEMPERATURE (°C) SUPPLY VOLTAGE (V) NORMALIZED ACCESS TIME vs. AMBIENT TEMPERATURE NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE VCC =5.5V f = 10 MHz 1.2 OUTPUT SINK CURRENT vs. OUTPUT VOLTAGE 120 1.4 1.2 100 1.3 1.15 1.1 TA = 25°C VCC =4.5V 1.2 1.05 80 1.1 60 1.0 40 0.9 20 VCC =5.0V TA =25°C 1.0 0.95 0.9 0.85 4 4.5 5 5.5 6 0.8 –100 SUPPLY VOLTAGE (V) –50 0 50 100 150 AMBIENT TEMPERATURE (°C) 0 0.0 1.0 2.0 3.0 4.0 OUTPUT VOLTAGE (V) OUTPUT SOURCE CURRENT vs. OUTPUT VOLTAGE –100 –80 –60 –40 –20 0.0 0.0 1.0 2.0 3.0 4.0 5.0 OUTPUT VOLTAGE (V) H010–8 6 CY27H010 Ordering Information[10] Speed (ns) 25 30 35 Ordering Code Package Name Package Type CY27H010–25JC J65 32-Lead Plastic Leaded Chip Carrier CY27H010–25ZC Z32 32-Lead Thin Small Outline Package CY27H010–30JC J65 32-Lead Plastic Leaded Chip Carrier CY27H010–30PC P19 32-Lead (600-Mil) Molded DIP CY27H010–30WC W20 32-Lead (600-Mil) Windowed CerDIP CY27H010–30ZC Z32 32-Lead Thin Small Outline Package CY27H010–35JC J65 32-Lead Plastic Leaded Chip Carrier CY27H010–35PC P19 32-Lead (600-Mil) Molded DIP CY27H010–35WC W20 32-Lead (600-Mil) Windowed CerDIP CY27H010–35ZC Z32 32-Lead Thin Small Outline Package CY27H010–35WMB W20 32-Lead (600-Mil) Windowed CerDIP CY27H010–35QMB Q55 32-Pin Windowed Rectangular Leadless Chip Carrier Operating Range Commercial Commercial Commercial Military Note: 10. Most of the above products are available in industrial temperature range. Contact a Cypress representative for specifications and product availability. MILITARY SPECIFICATIONS Group A Subgroup Testing DC Characteristics Parameter Subgroups VOH 1, 2, 3 VOL 1, 2, 3 VIH 1, 2, 3 VIL 1, 2, 3 IIX 1, 2, 3 IOZ 1, 2, 3 ICC 1, 2, 3 ISB 1, 2, 3 Switching Characteristics Parameter Subgroups tAA 7, 8, 9, 10, 11 tOE 7, 8, 9, 10, 11 tCE 7, 8, 9, 10, 11 Document #: 38–00171–D 7 CY27H010 Package Diagrams 32-Pin Windowed Rectangular Leadless Chip Carrier 32-Lead Plastic Leaded Chip Carrier J65 MIL-STD-1835 C-12 32-Lead (600-Mil) Molded DIP P19 8 CY27H010 Package Diagrams (continued) 32-Lead (600-Mil) Windowed CerDIP W20 32-Lead Thin Small Outline Package Z32 © Cypress Semiconductor Corporation, 1997. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.