INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤4.1mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching for SMPS ·Optimized technology for DC/DC converters ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 80 A IDM Drain Current-Single Pulsed 400 A PD Total Dissipation @TC=25℃ 94 W Tj Max. Operating Junction Temperature 175 ℃ -55~175 ℃ MAX UNIT 1.6 ℃/W 62 ℃/W Tstg Storage Temperature ·THERMAL CHARACTERISTICS SYMBOL Rth(ch-c) Rth(ch-a) PARAMETER Channel-to-case thermal resistance Channel-to-ambient thermal resistance isc website：www.iscsemi.cn 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc N-Channel MOSFET Transistor IPP041N04N,IIPP041N04N ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BVDSS Drain-Source Breakdown Voltage VGS=0V; ID = 1mA 40 VGS(th) Gate Threshold Voltage VDS=VGS; ID=45μA 2 RDS(on) Drain-Source On-Resistance IGSS TYP MAX UNIT V 4 V VGS=10V; ID=80A 4.1 mΩ Gate-Source Leakage Current VGS=20V;VDS=0V 100 nA IDSS Drain-Source Leakage Current VDS=40V; VGS= 0V 1 μA VSD Diode forward voltage IF =80A; VGS = 0 V 1.2 V isc website：www.iscsemi.cn 2 isc & iscsemi is registered trademark