Infineon C67047-A2206-A001 Fast switching diode chip in emcon-technology Datasheet

Preliminary
SIDC30D120H6
Fast switching diode chip in EMCON-Technology
FEATURES:
• 1200V EMCON technology 120 µm chip
• soft, fast switching
• low reverse recovery charge
• small temperature coefficient
Chip Type
VR
SIDC30D120H6
1200V
IF
50A
A
This chip is used for:
• EUPEC power modules and
discrete devices
C
Applications:
• SMPS, resonant applications,
drives
Die Size
Package
5.5 x 5.5 mm2
sawn on foil
Ordering Code
C67047-A2206A001
MECHANICAL PARAMETER:
Raster size
Area total / active
Anode pad size
5.5 x 5.5
30.25 / 23.33
mm
2
4.78 x 4.78
Thickness
120
µm
Wafer size
150
mm
Flat position
180
deg
Max. possible chips per wafer
482 pcs
Passivation frontside
Photoimide
Anode metallisation
3200 nm AlSiCu
Cathode metallisation
Die bond
Wire bond
Reject Ink Dot Size
Recommended Storage Environment
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
electrically conductive glue or solder
Al, ≤500µm
∅ 0.65mm ; max 1.2mm
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
Edited by INFINEON Technologies AI PS DD HV3, L 4182S, Edition 1, 8.01.2002
Preliminary
SIDC30D120H6
Maximum Ratings
Parameter
Symbol
Repetitive peak reverse voltage
VRRM
Continuous forward current limited by
Tjmax
Single pulse forward current
(depending on wire bond configuration)
Maximum repetitive forward current
limited by Tjmax
Operating junction and storage
temperature
Condition
Value
1200
IF
Unit
V
50
I FSM
tP = 10 ms sinusoidal
A
tbd
I FRM
100
Tj , Ts t g
-55...+150
°C
Static Electrical Characteristics (tested on chip), Tj=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Reverse leakage current
IR
V R= 1 2 0 0 V
Tj= 2 5 ° C
Cathode-Anode
breakdown Voltage
V Br
I R= 2 m A
Tj= 2 5 ° C
Forward voltage drop
VF
I F= 5 0 A
Tj= 2 5 ° C
Value
min.
Typ.
max.
27
1200
Unit
µA
V
1.6
V
Dynamic Electrical Characteristics, at Tj = 25 °C, unless otherwise specified, tested at component
Parameter
Reverse recovery time
Symbol
t rr1
t rr2
Conditions
I F =50A
di/dt=1350A/ µs
V R =600V
Value
min.
Tj = 2 5 ° C
Typ.
ns
Tj = 1 2 5 ° C
I F =50A
Tj = 2 5 ° C
IRRM2
di/dt=1350A/ µs
VR = 6 0 0 V
Tj = 1 2 5 ° C
67.5
Qrr1
I F =50A
Tj= 2 5 ° C
5.2
Qrr2
di/dt=1350A/ µs
VR = 6 0 0 V
Tj= 1 2 5 ° C
9.4
Peak rate of fall of reverse di r r 1 /dt
recovery current
di r r 2 /dt
I F =50A
T j = 25 ° C
tbd
Softness
S1
I F =50A
S2
di/dt=1350A/ µs
VR = 6 0 0 V
Reverse recovery charge
di/dt=1350A/ µs
VR = 6 0 0 V
64
A
µC
Tj= 1 2 5 ° C
Tj= 2 5 ° C
Tj= 1 2 5 ° C
Edited by INFINEON Technologies AI PS DD HV3, L 4182S, Edition 1, 8.01.2002
Unit
tbd
IRRM1
Peak recovery current
max.
A / µs
tbd
1
Preliminary
SIDC30D120H6
CHIP DRAWING:
Edited by INFINEON Technologies AI PS DD HV3, L 4182S, Edition 1, 8.01.2002
Preliminary
SIDC30D120H6
FURTHER ELECTRICAL CHARACTERISTICS:
This chip data sheet refers to the
device data sheet
INFINEON TECHNOLOGIES /
EUPEC
tbd
Description:
AQL 0,65 for visual inspection according to failure catalog
Electrostatic Discharge Sensitive Device according to MIL-STD 883
Test-Normen Villach/Prüffeld
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Strasse 53
D-81541 München
© Infineon Technologies AG 2000
All Rights Reserved.
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characteristics.
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Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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Edited by INFINEON Technologies AI PS DD HV3, L 4182S, Edition 1, 8.01.2002
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