DMN2041UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Mechanical Data Device V(BR)DSS RDS(ON) max N-Channel 20V 40mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V ID MAX TA = +25°C 4.7A 3.7A ideal for high efficiency power management applications. Applications Load Switch Power Management Functions Portable Power Adaptors Low On-Resistance Low Input Capacitance Low Profile, 0.6mm Max Height ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Case: U-DFN2020-6 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4 Terminal Connections: See Diagram Below Weight: 0.0065 grams (Approximate) U-DFN2020-6 D2 D1 S2 G2 D2 D1 D1 G2 G1 D2 ESD PROTECTED G1 S1 Gate Protection Diode Pin1 Gate Protection Diode S1 S2 Q1 N-CHANNEL Q2 N-CHANNEL Internal Schematic Bottom View Ordering Information (Note 4) Part Number DMN2041UFDB -7 DMN2041UFDB -13 Notes: Case U-DFN2020-6 U-DFN2020-6 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information U-DFN2020-6 Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN2041UFDB Document number: DS37421 Rev. 2 - 2 Mar 3 D7 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: B = 2014) M = Month (ex: 9 = September) YM D7 2016 D Apr 4 May 5 2017 E Jun 6 1 of 6 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D February 2015 © Diodes Incorporated DMN2041UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol Value Units Drain-Source Voltage Characteristic VDSS 20 V Gate-Source Voltage VGSS ±12 V A Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 4.7 3.8 t < 5s TA = +25°C TA = +70°C ID 6.1 4.9 A IS 2 A IDM 20 A Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (10µs pulse, duty cycle = 1%) Thermal Characteristics Characteristic Symbol RJA Value 1.4 2.2 92 55 RJC 30 TJ, TSTG -55 to 150 Steady State t < 5s Steady State t < 5s Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) PD Thermal Resistance, Junction to Case (Note 5) Operating and Storage Temperature Range Units W °C/W °C Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 6) Symbol Min Typ Max Unit BVDSS 20 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 μA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V VGS(th) 0.35 — 1.4 V VDS = VGS, ID = 250μA — 23 40 — 26 65 VSD — 0.75 1.2 V Input Capacitance Ciss — 713 — pF Output Capacitance Coss — 80 — pF Reverse Transfer Capacitance Crss — 68 — pF Gate Resistance Rg — 15 — Ω — 8 — nC Drain-Source Breakdown Voltage Test Condition ON CHARACTERISTICS (Note 6) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage RDS(ON) mΩ VGS = 4.5V, ID = 4.2A VGS = 2.5V, ID = 3.3A VGS = 0V, IS = 4.4A DYNAMIC CHARACTERISTICS (Note 7) Total Gate Charge (VGS = 4.5V) Qg VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz — 15 — nC Gate-Source Charge Qgs — 1.0 — nC Gate-Drain Charge Qgd — 1.1 — nC tD(on) — 3.6 — ns Turn-On Rise Time tr — 15.9 — ns Turn-Off Delay Time tD(off) — 16.0 — ns tf — 2.6 — ns Body Diode Reverse Recovery Time trr — 6.6 — nS IS = 4.4A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr — 1.2 — nC IS = 4.4A, dI/dt = 100A/μs Total Gate Charge (VGS = 8V) Turn-On Delay Time Turn-Off Fall Time Notes: VDS = 10V, ID = 5.5A VDD = 10V, VGS = 4.5V, RL = 2.3Ω, RG = 1Ω 5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. DMN2041UFDB Document number: DS37421 Rev. 2 - 2 2 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN2041UFDB 20 18 VGS = 4.5V VGS = 1.5V ID, DRAIN CURRENT (A) 16 14 VGS = 2.5V 12 VDS = 5.0V 18 VGS = 3.0V 16 ID, DRAIN CURRENT (A) 20 VGS = 8.0V VGS = 2.0V 10 8 6 14 12 10 8 6 TA = 150°C 4 4 VGS = 1.0V 2 TA = 125°C 2 TA = 85°C TA = 25°C TA = -55°C 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 0 3 0.03 0.029 0.028 VGS = 2.5V 0.027 0.026 0.025 VGS = 4.5V 0.024 0.023 0.022 0.021 0.02 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 R DS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.8 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 0.5 1 1.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 2 0.04 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = 2.5V ID = 3.3A 1.6 1.4 VGS = 4.5V ID = 4.2A 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 5 On-Resistance Variation with Temperature DMN2041UFDB Document number: DS37421 Rev. 2 - 2 3 of 6 www.diodes.com VGS = 4.5V TA = 150°C TA = 125°C 0.035 TA = 85°C 0.03 TA = 25°C 0.025 0.02 0.015 TA = -55°C 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.05 VGS = 2.5V ID = 3.3A 0.04 0.03 VGS = 4.5V ID = 4.2A 0.02 0.01 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature February 2015 © Diodes Incorporated DMN2041UFDB 20 18 0.8 ID = 1mA 0.6 16 IS, SOURCE CURRENT (A) VGS(th), GATE THRESHOLD VOLTAGE (V) 1 ID = 250µA 0.4 14 12 10 8 6 4 0.2 TA = 25°C TA = 125°C 2 0 -50 0 10000 8 1000 VGS GATE THRESHOLD VOLTAGE (V) -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Ambient Temperature C T, JUNCTION CAPACITANCE (pF) TA = 85°C TA = 150°C Ciss 100 Coss C rss TA = -55°C 0 0.3 0.6 0.9 1.2 1.5 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 7 6 VDS = 10V ID = 5.5A 5 4 3 2 1 f =1MHz 10 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 0 20 2 16 RDS(on) Limited 7 ID, DRAIN CURRENT (A) 6 VDS = 10V ID = 5.5A 5 4 3 2 1 0 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 100 8 VGS GATE THRESHOLD VOLTAGE (V) 0 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN2041UFDB Document number: DS37421 Rev. 2 - 2 16 4 of 6 www.diodes.com 10 DC PW = 10s 1 PW = 1s PW = 100ms 0.1 PW = 10ms TJ(max) = 150°C TA = 25°C VGS = 4.5V Single Pulse DUT on 1 * MRP Board 0.01 0.1 PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 February 2015 © Diodes Incorporated DMN2041UFDB r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 163°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A3 SEATING PLANE A1 D Pin#1 ID D2 z d E E2 f f L e b U-DFN2020-6 Type B Dim Min Max Typ A 0.545 0.605 0.575 A1 0 0.05 0.02 A3 0.13 b 0.20 0.30 0.25 D 1.95 2.075 2.00 d 0.45 D2 0.50 0.70 0.60 e 0.65 E 1.95 2.075 2.00 E2 0.90 1.10 1.00 f 0.15 L 0.25 0.35 0.30 z 0.225 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C Y Dimensions Value (in mm) Z 1.67 G 0.20 G1 0.40 X1 1.0 X2 0.45 Y 0.37 Y1 0.70 C 0.65 G X2 G1 X1 G Y1 Z DMN2041UFDB Document number: DS37421 Rev. 2 - 2 5 of 6 www.diodes.com February 2015 © Diodes Incorporated DMN2041UFDB IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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