ON NRVTSS5100E Low leakage trench-based schottky rectifier Datasheet

NRVTSS5100E,
NRVTSAF5100E
Low Leakage Trench-based
Schottky Rectifier
Features
• Fine Lithography Trench−based Schottky Technology for Very Low
•
•
•
•
•
•
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
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SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
MARKING
DIAGRAMS
Typical Applications
• Switching Power Supplies including Wireless, Smartphone and
•
•
•
•
•
Notebook Adapters
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
Instrumentation
LED Lighting
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
A
Y
WW
G
SMB
CASE 403A
AYWW
TE51G
G
SMA−FL
CASE 403AA
STYLE 6
E51
AYWWG
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NRVTSS5100ET3G
SMB
(Pb−Free)
5000 /
Tape & Reel
NRVTSAF5100ET3G
SMA−FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 1
1
Publication Order Number:
NRVTSS5100E/D
NRVTSS5100E, NRVTSAF5100E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
V
100
Average Rectified Forward Current
(TL = 100°C)
IF(AV)
5.0
A
Peak Repetitive Forward Current,
(Square Wave, 20 kHz, TL = 83°C)
IFRM
10
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IFSM
50
A
Storage Temperature Range
Tstg
−65 to +175
°C
Operating Junction Temperature
TJ
−55 to +175
°C
ESD Rating (Human Body Model)
1B
ESD Rating (Machine Model)
M3
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
°C/W
Maximum Thermal Resistance, Steady State (Note 1)
(NRVTSAF5100E)
Junction−to−Lead
RθJL
Junction−to−Ambient
RθJA
90
Junction−to−Lead
RθJL
13.1
Junction−to−Ambient
RθJA
71.1
(NRVTSS5100E)
1. Assumes 600
mm2
25
1 oz. copper bond pad, on a FR4 board
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Instantaneous Forward Voltage (Note 2)
(iF = 3.0 A, TJ = 25°C)
(iF = 5.0 A, TJ = 25°C)
Typ
Max
0.56
0.65
−
0.69
0.50
0.56
−
0.62
2.6
2.2
9
5
vF
(iF = 3.0 A, TJ = 125°C)
(iF = 5.0 A, TJ = 125°C)
Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
iR
Diode Capacitance
(Rated dc Voltage, TJ = 25°C, f = 1 MHz)
Cd
Unit
V
mA
mA
pF
54.4
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
NRVTSS5100E, NRVTSAF5100E
TYPICAL CHARACTERISTICS
100
iF, INSTANTANEOUS FORWARD
CURRENT (A)
TA = 175°C
TA = 150°C
10
TA = 25°C
TA = 125°C
TA = 85°C
1
TA = −55°C
0.3
0.4
0.5
0.6
0.7
TA = 25°C
TA = 125°C
TA = 85°C
1
TA = −55°C
0.8
0.9
1.0
1.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
TA = 175°C
TA = 125°C
1.E−04
TA = 85°C
TA = 175°C
TA = 150°C
1.E−02
TA = 150°C
1.E−03
TA = 125°C
1.E−03
TA = 85°C
1.E−04
1.E−05
1.E−05
1.E−06
TA = 25°C
1.E−06
TA = 25°C
1.E−07
20
30
40
50
60
70
80
90
100
10
20
30
40
50
60
70
80
90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
1000
C, JUNCTION CAPACITANCE (pF)
10
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
1.E−02
TJ = 25°C
100
10
0.1
TA = 150°C
0.1
0.2
1.E−01
1.E−07
10
TA = 175°C
IR, INSTANTANEOUS REVERSE CURRENT (A)
IR, INSTANTANEOUS REVERSE CURRENT (A)
0.1
0.1
IF(AV), AVERAGE FORWARD CURRENT (A)
iF, INSTANTANEOUS FORWARD
CURRENT (A)
100
1
10
100
9
DC
8
7
6
Square Wave
5
4
3
2
1
RqJL = 13.1°C/W
0
0
20
40
60
80
100
120
140
160
VR, REVERSE VOLTAGE (V)
TL, LEAD TEMPERATURE (°C)
Figure 5. Typical Junction Capacitance
Figure 6. Current Derating per Diode for
NRVTSS5100E
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3
NRVTSS5100E, NRVTSAF5100E
9
18
RqJL = 24.4°C/W
DC
8
PF(AV), AVERAGE FORWARD
POWER DISSIPATION (W)
IF(AV), AVERAGE FORWARD CURRENT (A)
TYPICAL CHARACTERISTICS
7
6
Square Wave
5
4
3
2
12
10
Square Wave
6
4
0
0
40
60
80
100 120 140
TL, LEAD TEMPERATURE (°C)
IPK/IAV = 5
8
2
20
IPK/IAV = 10
14
1
0
IPK/IAV
= 20
16
DC
0
160
1
2
3
4
5
6
IF(AV), AVERAGE FORWARD CURRENT (A)
7
Figure 8. Forward Power Dissipation
Figure 7. Current Derating per Diode for
NRVTSAF5100E
1000
R(t), (°C/W)
100
50% Duty Cycle
20%
10%
5%
10
2%
1%
1
0.1
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t, PULSE TIME (S)
Figure 9. Transient Thermal Response, Junction−to−Ambient, for
NRVTSS5100E
100
50% Duty Cycle
20%
R(t), (°C/W)
10
10%
5%
2%
1
0.1
0.0000001
1%
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (S)
Figure 10. Transient Thermal Response, Junction−to−Ambient, for
NRVTSAF5100E
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4
100
1000
NRVTSS5100E, NRVTSAF5100E
PACKAGE DIMENSIONS
SMB
CASE 403A−03
ISSUE J
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
E
b
DIM
A
A1
b
c
D
E
HE
L
L1
D
POLARITY INDICATOR
OPTIONAL AS NEEDED
MIN
1.95
0.05
1.96
0.15
3.30
4.06
5.21
0.76
MILLIMETERS
NOM
MAX
2.30
2.47
0.10
0.20
2.03
2.20
0.23
0.31
3.56
3.95
4.32
4.60
5.44
5.60
1.02
1.60
0.51 REF
A
L
L1
A1
c
SOLDERING FOOTPRINT*
2.261
0.089
2.743
0.108
2.159
0.085
SCALE 8:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
MIN
0.077
0.002
0.077
0.006
0.130
0.160
0.205
0.030
INCHES
NOM
0.091
0.004
0.080
0.009
0.140
0.170
0.214
0.040
0.020 REF
MAX
0.097
0.008
0.087
0.012
0.156
0.181
0.220
0.063
NRVTSS5100E, NRVTSAF5100E
PACKAGE DIMENSIONS
SMA−FL
CASE 403AA
ISSUE O
E
E1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
DIM
A
b
c
D
E
E1
L
D
TOP VIEW
A
MILLIMETERS
MIN
MAX
0.90
1.10
1.25
1.65
0.15
0.30
2.40
2.80
4.80
5.40
4.00
4.60
0.70
1.10
RECOMMENDED
SOLDER FOOTPRINT*
c
C
SIDE VIEW
SEATING
PLANE
5.56
1.76
2X
b
1.30
2X
L
BOTTOM VIEW
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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