M24M02-DR 2-Mbit serial I²C bus EEPROM Datasheet - production data Features SO8 (MN) 150 mil width WLCSP • Compatible with all I2C bus modes: – 1 MHz – 400 kHz – 100 kHz • Memory array: – 2 Mbit (256 Kbyte) of EEPROM – Page size: 256 byte – Additional Write lockable page • Single supply voltage: – 1.8 V to 5.5 V over –40 °C / +85 °C • Write: – Byte Write within 10 ms – Page Write within 10 ms • Random and sequential Read modes • Write protect of the whole memory array • Enhanced ESD/Latch-Up protection • More than 4 million Write cycles • More than 200-years data retention Packages • SO8 ECOPACK2® • WLCSP ECOPACK2® July 2015 This is information on a product in full production. DocID18204 Rev 8 1/38 www.st.com Contents M24M02-DR Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Signal description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.1 Serial Clock (SCL) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.2 Serial Data (SDA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.3 Chip Enable (E2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.4 Write Control (WC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.5 VSS (ground) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 2.6 Supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.6.1 Operating supply voltage (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.6.2 Power-up conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.6.3 Device reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2.6.4 Power-down conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 3 Memory organization . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 Device operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 4.1 Start condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.2 Stop condition . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.3 Data input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.4 Acknowledge bit (ACK) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.5 Device addressing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Instructions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.1 5.2 Write operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 5.1.1 Byte Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 5.1.2 Page Write . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 5.1.3 Write Identification Page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.1.4 Lock Identification Page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 5.1.5 ECC (Error Correction Code) and Write cycling . . . . . . . . . . . . . . . . . . 17 5.1.6 Minimizing Write delays by polling on ACK . . . . . . . . . . . . . . . . . . . . . . 18 Read operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 5.2.1 2/38 Random Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 DocID18204 Rev 8 M24M02-DR Contents 5.2.2 Current Address Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.2.3 Sequential Read . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.2.4 Read Identification Page . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 5.2.5 Read the lock status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 6 Initial delivery state . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 7 Maximum rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 8 DC and AC parameters . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 9 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 9.1 SO8N package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 9.2 WLCSP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 10 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 DocID18204 Rev 8 3/38 3 List of tables M24M02-DR List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. Table 13. Table 14. Table 15. Table 16. Table 17. Table 18. 4/38 Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Signals vs. bump position . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Device select code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Most significant address byte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Least significant address byte . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 AC measurement conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Input parameters. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Cycling performance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 Memory cell data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 DC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 400 kHz AC characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 1 MHz AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28 SO8N – 8-lead plastic small outline, 150 mils body width, package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31 WLCSP- 8-bump, 3.556 x 2.011 mm, wafer level chip scale package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 DocID18204 Rev 8 M24M02-DR List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 SO8 connections, top view . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 WLCSP connections . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Chip enable inputs connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 I2C bus protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Write mode sequences with WC = 0 (data write enabled) . . . . . . . . . . . . . . . . . . . . . . . . . 15 Write mode sequences with WC = 1 (data write inhibited) . . . . . . . . . . . . . . . . . . . . . . . . . 16 Write cycle polling flowchart using ACK . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 Read mode sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 AC measurement I/O waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24 Figure 13. Maximum Rbus value versus bus parasitic capacitance Cbus) for an I2C bus at maximum frequency fC = 1MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 AC waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 SO8N – 8-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . . 31 SO8N – 8-lead plastic small outline, 150 mils body width, package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 WLCSP- 8-bump, 3.556 x 2.011 mm, wafer level chip scale package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32 WLCSP- 8-bump, 3.556 x 2.011 mm, wafer level chip scale package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29 DocID18204 Rev 8 5/38 5 Description 1 M24M02-DR Description The M24M02-DR is a 2 Mbit I2C-compatible EEPROM (Electrically Erasable PROgrammable Memory) organized as 256 K × 8 bits. The M24M02-DR can operate with a supply voltage from 1.8 V to 5.5 V, over an ambient temperature range of –40 °C / +85 °C. The M24M02-DR offers an additional page, named the Identification Page (256 byte). The Identification Page can be used to store sensitive application parameters which can be (later) permanently locked in Read-only mode. Figure 1. Logic diagram 6## % 3#, 3$! -- $2 7# 633 !) Table 1. Signal names Signal name Function Direction E2 Chip Enable Input SDA Serial Data I/O SCL Serial Clock Input WC Write Control Input VCC Supply voltage - VSS Ground - Figure 2. SO8 connections, top view $5 6 ## $5 7# % 3#, 6 33 3$! !)V 1. DU: Don’t use (no signal should be applied on this pin; if connected, must be connected to VSS) 2. See Section 9: Package mechanical data for package dimensions, and how to identify pin 1 6/38 DocID18204 Rev 8 M24M02-DR Description Figure 3. WLCSP connections $ $ % % & & ' ' 0DUNLQJVLGH WRSYLHZ %XPSVLGH ERWWRPYLHZ 069 1. DU: Don’t use (no signal should be applied on this pin; if connected, must be connected to Vss) 2. See Section 9: Package mechanical data for package dimensions, and how to identify pin 1. Table 2. Signals vs. bump position Position A B C D 1 - - SCL - 2 VCC WC - SDA 3 DU - - VSS 4 - DU E2 - DocID18204 Rev 8 7/38 37 Signal description M24M02-DR 2 Signal description 2.1 Serial Clock (SCL) The signal applied on the SCL input is used to strobe the data available on SDA(in) and to output the data on SDA(out). 2.2 Serial Data (SDA) SDA is an input/output used to transfer data in or data out of the device. SDA(out) is an open drain output that may be wire-OR’ed with other open drain or open collector signals on the bus. A pull-up resistor must be connected (Figure 12 indicates how to calculate the value of the pull-up resistor). 2.3 Chip Enable (E2) This input signal is used to set the value that is to be looked for on the bit b3 of the 7-bit device select code. This input must be tied to VCC or VSS, to establish the device select code as shown in Figure 4. When not connected (left floating), this input is read as low (0 Figure 4. Chip enable inputs connection 9&& 9&& 0[[[ 0[[[ (L (L 966 2.4 966 $L Write Control (WC) This input signal is useful for protecting the entire contents of the memory from inadvertent write operations. Write operations are disabled to the entire memory array when Write Control (WC) is driven high. Write operations are enabled when Write Control (WC) is either driven low or left floating. When Write Control (WC) is driven high, device select and address bytes are acknowledged, Data bytes are not acknowledged. 2.5 VSS (ground) VSS is the reference for the VCC supply voltage. 8/38 DocID18204 Rev 8 M24M02-DR Signal description 2.6 Supply voltage (VCC) 2.6.1 Operating supply voltage (VCC) Prior to selecting the memory and issuing instructions to it, a valid and stable VCC voltage within the specified [VCC(min), VCC(max)] range must be applied (see Operating conditions in Section 8: DC and AC parameters). In order to secure a stable DC supply voltage, it is recommended to decouple the VCC line with a suitable capacitor (usually of the order of 10 nF to 100 nF) close to the VCC/VSS package pins. This voltage must remain stable and valid until the end of the transmission of the instruction and, for a write instruction, until the completion of the internal write cycle (tW). 2.6.2 Power-up conditions The VCC voltage has to rise continuously from 0 V up to the minimum VCC operating voltage (see Operating conditions in Section 8: DC and AC parameters). 2.6.3 Device reset In order to prevent inadvertent write operations during power-up, a power-on-reset (POR) circuit is included. At power-up, the device does not respond to any instruction until VCC has reached the internal reset threshold voltage. This threshold is lower than the minimum VCC operating voltage (see Operating conditions in Section 8: DC and AC parameters). When VCC passes over the POR threshold, the device is reset and enters the Standby Power mode; however, the device must not be accessed until VCC reaches a valid and stable DC voltage within the specified [VCC(min), VCC(max)] range (see Operating conditions in Section 8: DC and AC parameters). In a similar way, during power-down (continuous decrease in VCC), the device must not be accessed when VCC drops below VCC(min). When VCC drops below the power-on-reset threshold voltage, the device stops responding to any instruction sent to it. 2.6.4 Power-down conditions During power-down (continuous decrease in VCC), the device must be in the Standby Power mode (mode reached after decoding a Stop condition, assuming that there is no internal write cycle in progress). DocID18204 Rev 8 9/38 37 Memory organization 3 M24M02-DR Memory organization The memory is organized as shown below. Figure 5. Block diagram 7# % (IGH VOLTAGE GENERATOR #ONTROL LOGIC 3#, 3$! )/ SHIFT REGISTER $ATA REGISTER 9 DECODER !DDRESS REGISTER AND COUNTER PAGE )DENTIFICATION PAGE 8 DECODER -36 10/38 DocID18204 Rev 8 M24M02-DR 4 Device operation Device operation The device supports the I2C protocol. This is summarized in Figure 6. Any device that sends data on to the bus is defined to be a transmitter, and any device that reads the data to be a receiver. The device that controls the data transfer is known as the bus master, and the other as the slave device. A data transfer can only be initiated by the bus master, which will also provide the serial clock for synchronization. The device is always a slave in all communications. Figure 6. I2C bus protocol 3#, 3$! 3$! )NPUT 34!24 #ONDITION 3#, 3$! -3" 3$! #HANGE 34/0 #ONDITION !#+ 34!24 #ONDITION 3#, 3$! -3" !#+ 34/0 #ONDITION !)" DocID18204 Rev 8 11/38 37 Device operation 4.1 M24M02-DR Start condition Start is identified by a falling edge of Serial Data (SDA) while Serial Clock (SCL) is stable in the high state. A Start condition must precede any data transfer instruction. The device continuously monitors (except during a Write cycle) Serial Data (SDA) and Serial Clock (SCL) for a Start condition. 4.2 Stop condition Stop is identified by a rising edge of Serial Data (SDA) while Serial Clock (SCL) is stable and driven high. A Stop condition terminates communication between the device and the bus master. A Read instruction that is followed by NoAck can be followed by a Stop condition to force the device into the Standby mode. A Stop condition at the end of a Write instruction triggers the internal Write cycle. 4.3 Data input During data input, the device samples Serial Data (SDA) on the rising edge of Serial Clock (SCL). For correct device operation, Serial Data (SDA) must be stable during the rising edge of Serial Clock (SCL), and the Serial Data (SDA) signal must change only when Serial Clock (SCL) is driven low. 4.4 Acknowledge bit (ACK) The acknowledge bit is used to indicate a successful byte transfer. The bus transmitter, whether it be bus master or slave device, releases Serial Data (SDA) after sending eight bits of data. During the 9th clock pulse period, the receiver pulls Serial Data (SDA) low to acknowledge the receipt of the eight data bits. 12/38 DocID18204 Rev 8 M24M02-DR 4.5 Device operation Device addressing To start communication between the bus master and the slave device, the bus master must initiate a Start condition. Following this, the bus master sends the device select code, shown in Table 3 (most significant bit first). Table 3. Device select code Chip Enable Device type identifier(1) MSB address bits RW b7 b6 b5 b4 b3 b2 b1 b0 Device select code when addressing the memory array 1 0 1 0 E2(2) A17 A16 RW Device select code when addressing the Identification page 1 0 1 1 E2(2) X X RW 1. The most significant bit, b7, is sent first. 2. E2 bit value is compared to the logic level applied on the input pin E2. When the device select code is received, the device only responds if the Chip Enable Address is the same as the value on the Chip Enable (E2) input. The 8th bit is the Read/Write bit (RW). This bit is set to 1 for Read and 0 for Write operations. If a match occurs on the device select code, the corresponding device gives an acknowledgment on Serial Data (SDA) during the 9th bit time. If the device does not match the device select code, it deselects itself from the bus, and goes into Standby mode. DocID18204 Rev 8 13/38 37 Instructions M24M02-DR 5 Instructions 5.1 Write operations Following a Start condition the bus master sends a device select code with the R/W bit (RW) reset to 0. The device acknowledges this, as shown in Figure 7, and waits for two address bytes. The device responds to each address byte with an acknowledge bit, and then waits for the data byte. Table 4. Most significant address byte A15 A14 A13 A12 A11 A10 A9 A8 A1 A0 Table 5. Least significant address byte A7 A6 A5 A4 A3 A2 The 256 Kbytes (2 Mb) are addressed with 18 address bits, the 16 lower address bits being defined by the two address bytes and the most significant address bits (A17, A16) being included in the Device Select code (see Table 4). When the bus master generates a Stop condition immediately after a data byte Ack bit (in the “10th bit” time slot), either at the end of a Byte Write or a Page Write, the internal Write cycle tW is triggered. A Stop condition at any other time slot does not trigger the internal Write cycle. After the Stop condition and the successful completion of an internal Write cycle (tW), the device internal address counter is automatically incremented to point to the next byte after the last modified byte. During the internal Write cycle, Serial Data (SDA) is disabled internally, and the device does not respond to any requests. If the Write Control input (WC) is driven High, the Write instruction is not executed and the accompanying data bytes are not acknowledged, as shown in Figure 8. 14/38 DocID18204 Rev 8 M24M02-DR Byte Write After the device select code and the address byte, the bus master sends one data byte. If the addressed location is Write-protected, by Write Control (WC) being driven high, the device replies with NoAck, and the location is not modified. If, instead, the addressed location is not Write-protected, the device replies with Ack. The bus master terminates the transfer by generating a Stop condition, as shown in Figure 7. Figure 7. Write mode sequences with WC = 0 (data write enabled) 7# !#+ !#+ !#+ "YTE ADDR "YTE ADDR !#+ $ATA IN 3TOP $EV SEL 3TART "YTE 7RITE 27 7# !#+ 0AGE 7RITE !#+ "YTE ADDR $EV SEL 3TART !#+ "YTE ADDR !#+ $ATA IN $ATA IN 27 7# CONTgD !#+ 0AGE 7RITE CONTgD !#+ $ATA IN . 3TOP 5.1.1 Instructions DocID18204 Rev 8 !)D 15/38 37 Instructions 5.1.2 M24M02-DR Page Write The Page Write mode allows up to 256 byte to be written in a single Write cycle, provided that they are all located in the same page in the memory: that is, the most significant memory address bits, A17/A8, are the same. If more bytes are sent than will fit up to the end of the page, a “roll-over” occurs, i.e. the bytes exceeding the page end are written on the same page, from location 0. The bus master sends from 1 to 256 byte of data, each of which is acknowledged by the device if Write Control (WC) is low. If Write Control (WC) is high, the contents of the addressed memory location are not modified, and each data byte is followed by a NoAck, as shown in Figure 8. After each transferred byte, the internal page address counter is incremented. The transfer is terminated by the bus master generating a Stop condition. Figure 8. Write mode sequences with WC = 1 (data write inhibited) 7# !#+ "YTE ADDR !#+ "YTE ADDR ./ !#+ $ATA IN 3TOP $EV SEL 3TART "YTE 7RITE !#+ 27 7# !#+ "YTE ADDR $EV SEL 3TART 0AGE 7RITE !#+ !#+ "YTE ADDR ./ !#+ $ATA IN $ATA IN 27 7# CONTgD ./ !#+ $ATA IN . 3TOP 0AGE 7RITE CONTgD ./ !#+ 16/38 DocID18204 Rev 8 !)D M24M02-DR 5.1.3 Instructions Write Identification Page The Identification Page (256 byte) is an additional page which can be written and (later) permanently locked in Read-only mode. It is written by issuing the Write Identification Page instruction. This instruction uses the same protocol and format as Page Write (into memory array), except for the following differences: • Device type identifier = 1011b • MSB address bits A17/A8 are don't care except for address bit A10 which must be ‘0’. LSB address bits A7/A0 define the byte address inside the Identification page. If the Identification page is locked, the data bytes transferred during the Write Identification Page instruction are not acknowledged (NoAck). 5.1.4 Lock Identification Page The Lock Identification Page instruction (Lock ID) permanently locks the Identification page in Read-only mode. The Lock ID instruction is similar to Byte Write (into memory array) with the following specific conditions: 5.1.5 • Device type identifier = 1011b • Address bit A10 must be ‘1’; all other address bits are don't care • The data byte must be equal to the binary value xxxx xx1x, where x is don't care ECC (Error Correction Code) and Write cycling The Error Correction Code (ECC) is an internal logic function which is transparent for the I2C communication protocol. The ECC logic is implemented on each group of four EEPROM bytes(1). Inside a group, if a single bit out of the four bytes happens to be erroneous during a Read operation, the ECC detects this bit and replaces it with the correct value. The read reliability is therefore much improved. Even if the ECC function is performed on groups of four bytes, a single byte can be written/cycled independently. In this case, the ECC function also writes/cycles the three other bytes located in the same group(1). As a consequence, the maximum cycling budget is defined at group level and the cycling can be distributed over the 4 bytes of the group: the sum of the cycles seen by byte0, byte1, byte2 and byte3 of the same group must remain below the maximum value defined Table 10: Cycling performance. 1. A group of four bytes is located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3], where N is an integer. DocID18204 Rev 8 17/38 37 Instructions 5.1.6 M24M02-DR Minimizing Write delays by polling on ACK During the internal Write cycle, the device disconnects itself from the bus, and writes a copy of the data from its internal latches to the memory cells. The maximum Write time (tw) is shown in AC characteristics tables in Section 8: DC and AC parameters, but the typical time is shorter. To make use of this, a polling sequence can be used by the bus master. The sequence, as shown in Figure 9, is: • Initial condition: a Write cycle is in progress. • Step 1: the bus master issues a Start condition followed by a device select code (the first byte of the new instruction). • Step 2: if the device is busy with the internal Write cycle, no Ack will be returned and the bus master goes back to Step 1. If the device has terminated the internal Write cycle, it responds with an Ack, indicating that the device is ready to receive the second part of the instruction (the first byte of this instruction having been sent during Step 1). Figure 9. Write cycle polling flowchart using ACK :ULWHF\FOH LQSURJUHVV 6WDUWFRQGLWLRQ 'HYLFHVHOHFW ZLWK5: 12 )LUVWE\WHRILQVWUXFWLRQ ZLWK5: DOUHDG\ GHFRGHGE\WKHGHYLFH $&. UHWXUQHG <(6 12 1H[W 2SHUDWLRQLV DGGUHVVLQJWKH PHPRU\ <(6 6HQG$GGUHVV DQG5HFHLYH$&. 5H6WDUW 6WRS 12 'DWDIRUWKH :ULWHFSHUDWLRQ &RQWLQXHWKH :ULWHRSHUDWLRQ 6WDUW&RQGLWLRQ <(6 'HYLFHVHOHFW ZLWK5: &RQWLQXHWKH 5DQGRP5HDGRSHUDWLRQ $,H 1. The seven most significant bits of the Device Select code of a Random Read (bottom right box in the figure) must be identical to the seven most significant bits of the Device Select code of the Write (polling instruction in the figure). 18/38 DocID18204 Rev 8 M24M02-DR Read operations Read operations are performed independently of the state of the Write Control (WC) signal. After the successful completion of a Read operation, the device internal address counter is incremented by one, to point to the next byte address. For the Read instructions, after each byte read (data out), the device waits for an acknowledgment (data in) during the 9th bit time. If the bus master does not acknowledge during this 9th time, the device terminates the data transfer and switches to its Standby mode. Figure 10. Read mode sequences !#+ $ATA OUT 3TOP 3TART $EV SEL ./ !#+ 27 !#+ 2ANDOM !DDRESS 2EAD "YTE ADDR $EV SEL !#+ ./ !#+ $ATA OUT . 27 !#+ !#+ "YTE ADDR !#+ "YTE ADDR 27 !#+ $EV SEL 3TART $EV SEL !#+ $ATA OUT 27 ./ !#+ $ATA OUT . 3TOP !#+ $ATA OUT 27 !#+ $ATA OUT ./ !#+ 3TOP 3TART $EV SEL 3EQUENTION 2ANDOM 2EAD !#+ "YTE ADDR 27 !#+ 3EQUENTIAL #URRENT 2EAD !#+ 3TART 3TART $EV SEL !#+ 3TOP #URRENT !DDRESS 2EAD 3TART 5.2 Instructions DocID18204 Rev 8 !)D 19/38 37 Instructions 5.2.1 M24M02-DR Random Address Read A dummy Write is first performed to load the address into this address counter (as shown in Figure 10) but without sending a Stop condition. Then, the bus master sends another Start condition, and repeats the device select code, with the RW bit set to 1. The device acknowledges this, and outputs the contents of the addressed byte. The bus master must not acknowledge the byte, and terminates the transfer with a Stop condition. 5.2.2 Current Address Read For the Current Address Read operation, following a Start condition, the bus master only sends a device select code with the R/W bit set to 1. The device acknowledges this, and outputs the byte addressed by the internal address counter. The counter is then incremented. The bus master terminates the transfer with a Stop condition, as shown in Figure 10, without acknowledging the byte. Note that the address counter value is defined by instructions accessing either the memory or the Identification page. When accessing the Identification page, the address counter value is loaded with the byte location in the Identification page, therefore the next Current Address Read in the memory uses this new address counter value. When accessing the memory, it is safer to always use the Random Address Read instruction (this instruction loads the address counter with the byte location to read in the memory, see Section 5.2.1) instead of the Current Address Read instruction. 5.2.3 Sequential Read This operation can be used after a Current Address Read or a Random Address Read. The bus master does acknowledge the data byte output, and sends additional clock pulses so that the device continues to output the next byte in sequence. To terminate the stream of bytes, the bus master must not acknowledge the last byte, and must generate a Stop condition, as shown in Figure 10. The output data comes from consecutive addresses, with the internal address counter automatically incremented after each byte output. After the last memory address, the address counter “rolls-over”, and the device continues to output data from memory address 00h. 5.2.4 Read Identification Page The Identification Page (256 bytes) is an additional page which can be written and (later) permanently locked in Read-only mode. The Identification Page can be read by issuing an Read Identification Page instruction. This instruction uses the same protocol and format as the Random Address Read (from memory array) with device type identifier defined as 1011b. The MSB address bits A17/A8 are don't care, the LSB address bits A7/A0 define the byte address inside the Identification Page. The number of bytes to read in the ID page must not exceed the page boundary (e.g.: when reading the Identification Page from location 100d, the number of bytes should be less than or equal to 156, as the ID page boundary is 256 bytes). 20/38 DocID18204 Rev 8 M24M02-DR 5.2.5 Instructions Read the lock status The locked/unlocked status of the Identification page can be checked by transmitting a specific truncated command [Identification Page Write instruction + one data byte] to the device. The device returns an acknowledge bit if the Identification page is unlocked, otherwise a NoAck bit if the Identification page is locked. Right after this, it is recommended to transmit to the device a Start condition followed by a Stop condition, so that: • Start: the truncated command is not executed because the Start condition resets the device internal logic, • Stop: the device is then set back into Standby mode by the Stop condition. DocID18204 Rev 8 21/38 37 Initial delivery state 6 M24M02-DR Initial delivery state The device is delivered with all the memory array bits and Identification page bits set to 1 (each byte contains FFh). 22/38 DocID18204 Rev 8 M24M02-DR 7 Maximum rating Maximum rating Stressing the device outside the ratings listed in Table 6 may cause permanent damage to the device. These are stress ratings only, and operation of the device at these, or any other conditions outside those indicated in the operating sections of this specification, is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Table 6. Absolute maximum ratings Symbol TSTG TLEAD Parameter Min. Max. Unit Ambient operating temperature –40 130 °C Storage temperature –65 150 °C (1) °C Lead temperature during soldering IOL DC output current (SDA = 0) VIO Input or output range VCC Supply voltage VESD Electrostatic pulse (Human Body see note - model)(2) mA –0.50 6.5 V –0.50 6.5 V - 3000 V 1. Compliant with JEDEC Std J-STD-020D (for small body, Sn-Pb or Pb-free assembly), the ST ECOPACK® 7191395 specification, and the European directive on Restrictions of Hazardous Substances (RoHS directive 2011/65/EU of July 2011). 2. Positive and negative pulses applied on different combinations of pin connections, according to AECQ100-002 (compliant with ANSI/ESDA/JEDEC JS-001-2012 standard, C1=100 pF, R1=1500 Ω). DocID18204 Rev 8 23/38 37 DC and AC parameters 8 M24M02-DR DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. Table 7. Operating conditions Symbol VCC TA Parameter Min. Max. Unit Supply voltage 1.8 5.5 V Ambient operating temperature –40 85 °C Max. Unit Table 8. AC measurement conditions Symbol Cbus Parameter Min. Load capacitance 100 - pF - SCL input rise/fall time, SDA input fall time 50 ns - Input levels 0.2 VCC to 0.8 VCC V - Input and output timing reference levels 0.3 VCC to 0.7 VCC V Figure 11. AC measurement I/O waveform )NPUT VOLTAGE LEVELS )NPUT AND OUTPUT 4IMING REFERENCE LEVELS 6## 6## 6## 6## -36 Table 9. Input parameters Symbol Parameter(1) Test condition Min. Max. Unit CIN Input capacitance (SDA) - - 8 pF CIN Input capacitance (other pins) - - 6 pF VIN < 0.3 VCC 30 - kΩ VIN > 0.7 VCC 500 - kΩ ZL ZH Input impedance (E2, WC)(2) 1. Characterized only, not tested in production. 2. 24/38 input impedance when the memory is selected (after a Start condition). DocID18204 Rev 8 M24M02-DR DC and AC parameters Table 10. Cycling performance Symbol Ncycle Parameter Write cycle endurance(1) Test condition Max. TA ≤ 25 °C, VCC(min) < VCC < VCC(max) 4,000,000 TA = 85 °C, VCC(min) < VCC < VCC(max) 1,200,000 Unit Write cycle(2) 1. The write cycle endurance is defined for group of four bytes located at addresses [4*N, 4*N+1, 4*N+2, 4*N+3] where N is an integer. The Write cycle endurance is defined by characterization and qualification. 2. A Write cycle is executed when either a Page Write, a Byte write, a Write Identification Page or a Lock Identification Page instruction is decoded. When using the Byte Write, the Page Write or the Write Identification Page, refer also to Section 5.1.5: ECC (Error Correction Code) and Write cycling Table 11. Memory cell data retention Parameter Data retention(1) Test condition TA = 55 °C Min. Unit 200 Year 1. For products identified by process letter K. The data retention behavior is checked in production, while the 200-year limit is defined from characterization and qualification results. DocID18204 Rev 8 25/38 37 DC and AC parameters M24M02-DR Table 12. DC characteristics Symbol Test conditions (in addition to those in Table 7 and Table 8) Parameter Min. Max. Unit ILI Input leakage current ( E2, SCL, SDA) VIN = VSS or VCC device in Standby mode - ±2 µA ILO Output leakage current SDA in Hi-Z, external voltage applied on SDA: VSS or VCC - ±2 µA VCC = 1.8 V, fc= 400 kHz - 1 mA VCC = 2.5 V, fc =400 kHz - 1 mA VCC = 5.5 V, fc =400 kHz - 2 mA 1.8 V < VCC < 5.5 V, fc= 1 MHz - 2.5 mA Average value during tW, 1.8 V ≤ VCC ≤ 5.5 V - 2(1) mA Device not selected(2), VIN = VSS or VCC, VCC = 1.8 V - 3 µA Device not selected(2), VIN = VSS or VCC, VCC = 2.5 V - 5 µA Device not selected(2), VIN = VSS or VCC, VCC = 5.5 V - 5 µA 1.8 V ≤ VCC < 2.5 V –0.45 0.25 VCC V 2.5 V ≤ VCC < 5.5 V –0.45 0.30 VCC V 1.8 V ≤ VCC < 2.5 V 0.75 VCC VCC+1 2.5 V ≤ VCC < 5.5 V 0.70 VCC VCC+1 IOL = 1.0 mA, VCC = 1.8 V - 0.2 V IOL = 2.1 mA, VCC = 2.5 V - 0.4 V IOL = 3.0 mA, VCC = 5.5 V - 0.4 V ICC ICC0 ICC1 Supply current (Read) Supply current (Write) Standby supply current VIL Input low voltage (SCL, SDA, WC) VIH Input high voltage (SCL, SDA, WC) VOL Output low voltage 1. Characterized only, not tested in production. 2. The device is not selected after power-up, after a Read instruction (after the Stop condition), or after the completion of the internal write cycle tW (tW is triggered by the correct decoding of a Write instruction). 26/38 DocID18204 Rev 8 V M24M02-DR DC and AC parameters Table 13. 400 kHz AC characteristics Parameter(1) Symbol Alt. fC fSCL Clock frequency tCHCL tHIGH tCLCH tLOW tQL1QL2(2) tF tXH1XH2 tR Min. Max. Unit - 400 kHz Clock pulse width high 600 - ns Clock pulse width low 1300 - ns SDA (out) fall time 20(3) 120 ns Input signal rise time (4) (4) ns (4) (4) ns 100 - ns 0 - ns tXL1XL2 tF Input signal fall time tDXCH tSU:DAT Data in set up time tCLDX tHD:DAT Data in hold time tCLQX (5) tDH Data out hold time 100 - ns tCLQV (6) tAA Clock low to next data valid (access time) 100 900 ns tCHDL tSU:STA Start condition setup time 600 - ns tDLCL tHD:STA Start condition hold time 600 - ns tCHDH tSU:STO Stop condition set up time 600 - ns tDHDL tBUF Time between Stop condition and next Start condition 1300 - ns tWLDL(7) tSU:WC WC set up time (before the Start condition) 0 - µs (8) tHD:WC WC hold time (after the Stop condition) 1 - µs Write time - 10 ms Pulse width ignored (input filter on SCL and SDA) - single glitch - 80 ns tDHWH tW tWR tNS(2) - 1. Test conditions (in addition to those specified under Operating conditions and AC test measurement conditions in Section 8: DC and AC parameters). 2. Characterized only, not tested in production. 3. With CL = 10 pF. 4. There is no min. or max. values for the input signal rise and fall times. It is however recommended by the I²C specification that the input signal rise and fall times be more than 20 ns and less than 300 ns when fC < 400 kHz. 5. The min value for tCLQX (Data out hold time) of the M24xxx devices offers a safe timing to bridge the undefined region of the falling edge SCL. 6. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach either 0.3 VCC or 0.7 VCC, assuming that Rbus × Cbus time constant is within the values specified in Figure 12. 7. WC=0 set up time condition to enable the execution of a WRITE command. 8. WC=0 hold time condition to enable the execution of a WRITE command. DocID18204 Rev 8 27/38 37 DC and AC parameters M24M02-DR Table 14. 1 MHz AC characteristics Symbol Alt. fC fSCL Clock frequency tCHCL tHIGH tCLCH tXH1XH2 tXL1XL2 Min. Max. Unit 0 1 MHz Clock pulse width high 260 - ns tLOW Clock pulse width low 400 - ns tR Input signal rise time (1) (1) ns Input signal fall time (1) (1) ns 120 ns 50 - ns 0 - ns 100 - ns - 450 ns tF Parameter tQL1QL2(2) tF SDA (out) fall time tDXCH tSU:DAT Data in setup time tCLDX tHD:DAT Data in hold time 20 (3) tCLQX(4) tDH Data out hold time tCLQV(5) tAA Clock low to next data valid (access time) tCHDL tSU:STA Start condition setup time 250 - ns tDLCL tHD:STA Start condition hold time 250 - ns tCHDH tSU:STO Stop condition setup time 250 - ns tDHDL tBUF Time between Stop condition and next Start condition 500 - ns tWLDL(6) tSU:WC WC set up time (before the Start condition) 0 - µs tDHWH(7)(2) tHD:WC WC hold time (after the Stop condition) 1 - µs tW tWR Write time - 10 ms tNS(2) - Pulse width ignored (input filter on SCL and SDA) - 80 ns 1. There is no min. or max. values for the input signal rise and fall times. It is however recommended by the I²C specification that the input signal rise and fall times be less than 120 ns when fC < 1 MHz. 2. Characterized only, not tested in production. 3. With CL = 10 pF. 4. To avoid spurious Start and Stop conditions, a minimum delay is placed between SCL=1 and the falling or rising edge of SDA. 5. tCLQV is the time (from the falling edge of SCL) required by the SDA bus line to reach either 0.3 VCC or 0.7 VCC, assuming that the Rbus × Cbus time constant is within the values specified in Figure 13. 6. WC=0 set up time condition to enable the execution of a WRITE command. 7. WC=0 hold time condition to enable the execution of a WRITE command. 28/38 DocID18204 Rev 8 M24M02-DR DC and AC parameters Figure 12. Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 400 kHz "US LINE PULL UP RESISTOR K K½ 4HE 2 BUS X #BUS TIME CONSTANT MUST BE BELOW THE NS TIME CONSTANT LINE REPRESENTED ON THE LEFT 2 BU S § # BU S (ERE 2BUS § #BUS NS 6## 2BUS NS )£# BUS MASTER 3#, -XXX 3$! P& "US LINE CAPACITOR P& #BUS AIB Figure 13. Maximum Rbus value versus bus parasitic capacitance Cbus) for an I2C bus at maximum frequency fC = 1MHz "US LINE PULL UP RESISTOR K 6## 4HE 2BUS § #BUS TIME CONSTANT MUST BE BELOW THE NS TIME CONSTANT LINE REPRESENTED ON THE LEFT 2 BUS § # BUS NS 2BUS )£# BUS MASTER 3#, -XXX 3$! (ERE 2 BUS § #BUS NS #BUS "US LINE CAPACITOR P& -36 DocID18204 Rev 8 29/38 37 DC and AC parameters M24M02-DR Figure 14. AC waveforms ^ƚĂƌƚ ĐŽŶĚŝƚŝŽŶ ^ƚĂƌƚ ^ƚŽƉ ĐŽŶĚŝƚŝŽŶ ĐŽŶĚŝƚŝŽŶ ƚy>ϭy>Ϯ ƚy,ϭy,Ϯ ƚ,> ƚ>, ^> ƚ>> ƚy>ϭy>Ϯ ^/Ŷ ƚ,> ƚy,ϭy,Ϯ ^ /ŶƉƵƚ ^ ƚy, ŚĂŶŐĞ ƚ>y ƚ,, ƚ,> t ƚ,t, ƚt>> ^ƚŽƉ ĐŽŶĚŝƚŝŽŶ ^ƚĂƌƚ ĐŽŶĚŝƚŝŽŶ ^> ^/Ŷ ƚt ƚ,, ƚ,> tƌŝƚĞĐLJĐůĞ ƚ,> ^> ƚ>Ys ^KƵƚ ƚ>Yy ĂƚĂǀĂůŝĚ ƚY>ϭY>Ϯ ĂƚĂǀĂůŝĚ /ϬϬϳϵϱŝ 30/38 DocID18204 Rev 8 M24M02-DR 9 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 9.1 SO8N package information Figure 15. SO8N – 8-lead plastic small outline, 150 mils body width, package outline K[Û $ $ F FFF E H PP *$8*(3/$1( ' N ( ( $ / / 62$B9 1. Drawing is not to scale. Table 15. SO8N – 8-lead plastic small outline, 150 mils body width, package mechanical data Symbol inches(1) millimeters Min. Typ. Max. Min. Typ. Max. A - - 1.750 - - 0.0689 A1 0.100 - 0.250 0.0039 - 0.0098 A2 1.250 - - 0.0492 - - b 0.280 - 0.480 0.0110 - 0.0189 c 0.170 - 0.230 0.0067 - 0.0091 D 4.800 4.900 5.000 0.1890 0.1929 0.1969 E 5.800 6.000 6.200 0.2283 0.2362 0.2441 E1 3.800 3.900 4.000 0.1496 0.1535 0.1575 e - 1.270 - - 0.0500 - h 0.250 - 0.500 0.0098 - 0.0197 k 0° - 8° 0° - 8° L 0.400 - 1.270 0.0157 - 0.0500 L1 - 1.040 - - 0.0409 - ccc - - 0.100 - - 0.0039 1. Values in inches are converted from mm and rounded to four decimal digits. DocID18204 Rev 8 31/38 37 Package mechanical data M24M02-DR Figure 16. SO8N – 8-lead plastic small outline, 150 mils body width, package recommended footprint [ 2B621B)3B9 1. Dimensions are expressed in millimeters. 9.2 WLCSP package information Figure 17. WLCSP- 8-bump, 3.556 x 2.011 mm, wafer level chip scale package outline H EEE = ) * ; < ' + H H 'HWDLO$ ( ) $ $ DDD :DIHUEDFNVLGH [ - 6LGHYLHZ + %XPSVLGH 2ULHQWDWLRQ UHIHUHQFH 'HWDLO$ 5RWDWHG %XPS $ HHH = E FFF GGG =;< = = 6HDWLQJSODQH :/&63B(B&B0(B9 1. Drawing is not to scale. 2. Primary datum Z and seating plane are defined by the spherical crowns of the bump. 32/38 DocID18204 Rev 8 M24M02-DR Package mechanical data Table 16. WLCSP- 8-bump, 3.556 x 2.011 mm, wafer level chip scale package mechanical data inches(1) millimeters Symbol Min Typ Max Min Typ Max A 0.500 0.540 0.580 0.0197 0.0213 0.0228 A1 - 0.190 - - 0.0075 - A2 - 0.350 - - 0.0138 - (2) - 0.270 - - 0.0106 - D - 3.556 3.576 - 0.1400 0.1408 E - 2.011 2.031 - 0.0792 0.0800 e - 1.000 - - 0.0394 - e1 - 1.200 - - 0.0472 - e2 - 2.100 - - 0.0827 - F - 0.505 - - 0.0199 - G - 0.500 - - 0.0197 - H - 0.728 - - 0.0287 - J - 0.200 - - 0.0079 - aaa - - 0.110 - - 0.0043 bbb - - 0.110 - - 0.0043 ccc - - 0.110 - - 0.0043 ddd - - 0.060 - - 0.0024 eee - - 0.060 - - 0.0024 b 1. Values in inches are converted from mm and rounded to 4 decimal digits. 2. Dimension is measured at the maximum bump diameter parallel to primary datum Z. Figure 18. WLCSP- 8-bump, 3.556 x 2.011 mm, wafer level chip scale package recommended footprint :/&63B(B&B)3B9 1. Dimensions are expressed in millimeters. DocID18204 Rev 8 33/38 37 Part numbering 10 M24M02-DR Part numbering Table 17. Ordering information scheme Example: M24M02 -D R MN 6 T P /K Device type M24 = I2C serial access EEPROM Device function M02 = 2Mbit (256 K x 8 bit) EEPROM with additional identification page Device family B = Without Identification page D = With Identification page Operating voltage R = VCC = 1.8 V to 5.5 V Package(1) MN = SO8 (150 mil width) CS = Standard WLCSP Device grade 6 = Industrial: device tested with standard test flow over –40 to 85 °C Option T = Tape and reel packing blank = tube packing Plating technology P or G = ECOPACK2® (RoHS compliant) Process(2) /K = Manufacturing technology code 1. All packages are ECOPACK2® (RoHS compliant and free of brominated, chlorinated and antimony-oxide flame retardants). 2. The process letters apply to WLCSP device only. These process letters appear on the device package (marking) and on the shipment box. Please contact your nearest ST Sales Office for further information. 34/38 DocID18204 Rev 8 M24M02-DR Part numbering Engineering samples Parts marked as “ES”, “E” or accompanied by an Engineering Sample notification letter, are not yet qualified and therefore not yet ready to be used in production and any consequences deriving from such usage will not be at ST charge. In no event, ST will be liable for any customer usage of these engineering samples in production. ST Quality has to be contacted prior to any decision to use these Engineering samples to run qualification activity. DocID18204 Rev 8 35/38 37 Revision history 11 M24M02-DR Revision history Table 18. Document revision history Date Revision 22-Dec-2010 1 Initial release. 09-Feb-2011 2 Updated: – Section 3.18: Read Identification Page – Section 3.19: Read the lock status – Figure 2: SO8 connections – Table 6: Absolute maximum ratings – Table 10: Input parameters – Table 11: DC characteristics – Table 12: AC characteristics at 400 kHz – Table 13: 1 MHz AC characteristics Deleted: – Table 15 “Available M24M02-x products (package, voltage range, frequency, temperature grade)”. 09-Aug-2011 3 Updated Figure 5: Maximum Rbus value versus bus parasitic capacitance (Cbus) for an I2C bus at maximum frequency fC = 1 MHz and Table 11: DC characteristics. 4 Updated: – Table 2: Device select code – Table 3: Most significant address byte – Table 4: Least significant address byte. – Section 3.6: Write operations – Section 3.8: Page Write 5 Updated document template and text (minor changes). Cycling updated to 4 million cycles and data retention updated to 200 years. Added WLCSP packages. 6 Document reformatted. Removed information related to thin WLCSP package. Updated: – WLCSP package silhouette on cover page – Section 1: Description – Figure 3: WLCSP connections – Note (1) under Table 6: Absolute maximum ratings. Added Figure 18: WLCSP- 8-bump, 3.556 x 2.011 mm, wafer level chip scale package recommended footprint 07-Feb-2012 25-Oct-2012 04-Jun-2013 36/38 Changes DocID18204 Rev 8 M24M02-DR Revision history Table 18. Document revision history (continued) Date 23-May-2014 27-Jul-2015 Revision Changes 7 removed note on page 7, Updated Table 3: Device select code, updated section numbering for Section 5.2.4 and Section 5.2.5, updated note 1 on Table 11: Memory cell data retention, updated Figure 18: WLCSP- 8-bump, 3.556 x 2.011 mm, wafer level chip scale package recommended footprint. 8 Updated: – Figure 3 with note 1. – Table 2 – Section 9.1: SO8N package information and Section 9.2: WLCSP package information DocID18204 Rev 8 37/38 37 M24M02-DR IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2015 STMicroelectronics – All rights reserved 38/38 DocID18204 Rev 8