FCH190N65F N-Channel SuperFET® II FRFET® MOSFET 650 V, 20.6 A, 190 mΩ Features Description • 700 V @ TJ = 150°C SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SuperFET II FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. • Typ. RDS(on) = 168 mΩ • Ultra Low Gate Charge (Typ. Qg = 60 nC) • Low Effective Output Capacitance (Typ. Coss(eff.) = 304 pF) • 100% Avalanche Tested • RoHS Compliant Applications • LCD / LED / PDP TV • Telecom / Server Power Supplies • Solar Inverter • AC - DC Power Supply D G G D S TO-247 long leads S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 4.0 A EAR Repetitive Avalanche Energy (Note 1) 2.1 mJ dv/dt Parameter - DC (f > 1 Hz) - Continuous (TC = 25oC) - Pulsed V ±30 20.6 - Continuous (TC = 100oC) A 13.1 (Note 1) 61.8 A (Note 2) 400 mJ MOSFET dv/dt 100 Peak Diode Recovery dv/dt (Note 3) (TC = 25oC) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds Unit V ±20 - AC PD TL FCH190N65F_F155 650 - Derate Above 25oC V/ns 50 208 W 1.67 W/oC -55 to +150 o C 300 o C Thermal Characteristics Symbol Parameter FCH190N65F_F155 RθJC Thermal Resistance, Junction to Case, Max. 0.6 RθJA Thermal Resistance, Junction to Ambient, Max. 40 ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 1 Unit o C/W www.fairchildsemi.com FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET August 2014 Part Number FCH190N65F_F155 Top Mark FCH190N65F Package TO-247 G03 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 30 units Electrical Characteristics TC = 25oC unless otherwise noted. Symbol Parameter Test Conditions Min. Typ. Max. VGS = 0 V, ID = 1 mA, TJ = 25°C 650 - - VGS = 0 V, ID = 1 mA, TJ = 150°C 700 - - - 0.71 - Unit Off Characteristics BVDSS Drain to Source Breakdown Voltage ΔBVDSS / ΔTJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current ID = 1 mA, Referenced to 25oC VDS = 650 V, VGS = 0 V - - 10 VDS = 520 V, VGS = 0 V, TC = 125 oC - 60 - VGS = ±20 V, VDS = 0 V - - ±100 V V/oC μA nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 2 mA 3 - 5 V Static Drain to Source On Resistance - 168 190 mΩ gFS Forward Transconductance VGS = 10 V, ID = 10 A VDS = 20 V, ID = 10 A - 18 - S Dynamic Characteristics - 2425 3225 pF - 78 104 pF - 0.68 - pF - 44 - pF VDS = 0 V to 400 V, VGS = 0 V - 304 - pF VDS = 380 V, ID = 10 A, VGS = 10 V - 60 78 nC - 12 - nC - 25 - nC - 0.6 - Ω - 25 60 ns - 11 32 ns - 62 134 ns - 4.2 18 ns Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance VDS = 380 V, VGS = 0 V, f = 1 MHz Coss(eff.) Effective Output Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance VDS = 100 V, VGS = 0 V, f = 1 MHz (Note 4) f = 1 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 380 V, ID = 10 A, VGS = 10 V, Rg = 4.7 Ω (Note 4) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 20.6 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 61.8 A VSD Drain to Source Diode Forward Voltage VGS = 0 V, ISD = 10 A - - 1.2 V trr Reverse Recovery Time - 105 - ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 10 A, dIF/dt = 100 A/μs - 515 - nC Notes: 1. Repetitive rating: pulse width limited by maximum junction temperature. 2. IAS = 4 A, RG = 25 Ω, starting TJ = 25°C. 3. ISD ≤ 10 A, di/dt ≤ 200 A/μs, VDD ≤ 380 V, starting TJ = 25°C. 4. Essentially independent of operating temperature typical characteristics. ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 2 www.fairchildsemi.com FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 100 VGS = 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5V *Notes: 1. VDS = 20V 2. 250μs Pulse Test ID, Drain Current[A] ID, Drain Current[A] 100 10 10 o 150 C o 25 C 1 o -55 C *Notes: 1. 250μs Pulse Test o 2. TC = 25 C 1 0.3 1 VDS, Drain-Source Voltage[V] 0.1 10 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4 5 6 7 VGS, Gate-Source Voltage[V] IS, Reverse Drain Current [A] 100 0.3 VGS = 10V 0.2 VGS = 20V 10 o 150 C 1 o 25 C 0.1 0.01 *Notes: 1. VGS = 0V o 0.1 *Note: TC = 25 C 0 14 28 42 ID, Drain Current [A] 56 0.001 0.0 70 Figure 5. Capacitance Characteristics 1.5 10 VGS, Gate-Source Voltage [V] 10000 Ciss Capacitances [pF] 2. 250μs Pulse Test 0.3 0.6 0.9 1.2 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 50000 1000 Coss 100 *Note: 1. VGS = 0V 2. f = 1MHz 10 1 8 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 0.4 RDS(ON) [Ω], Drain-Source On-Resistance 3 Crss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1 10 100 VDS, Drain-Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 6 4 2 0 1000 3 VDS = 130V VDS = 325V VDS = 520V 8 *Note: ID = 10A 0 13 26 39 52 Qg, Total Gate Charge [nC] 65 www.fairchildsemi.com FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2.5 1.1 1.0 0.9 *Notes: 1. VGS = 0V 2. ID = 10mA 0.8 -100 -50 0 50 100 150 o TJ, Junction Temperature [ C] RDS(on), [Normalized] Drain-Source On-Resistance BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 2.0 1.5 1.0 0.5 -100 200 Figure 9. Maximum Safe Operating Area *Notes: 1. VGS = 10V 2. ID = 10A -50 0 50 100 150 o TJ, Junction Temperature [ C] 200 Figure 10. Maximum Drain Current vs. Case Temperature 25 100 20 ID, Drain Current [A] ID, Drain Current [A] 10μs 100μs 10 1ms Operation in This Area is Limited by R DS(on) 1 DC *Notes: o 15 10 5 1. TC = 25 C o 0.1 2. TJ = 150 C 3. Single Pulse 1 10 100 VDS, Drain-Source Voltage [V] 0 25 1000 50 75 100 125 o TC, Case Temperature [ C] 150 Figure 11. Eoss vs. Drain to Source Voltage 12.0 EOSS, [μJ] 9.6 7.2 4.8 2.4 0 0 140 280 420 560 VDS, Drain to Source Voltage [V] ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 700 4 www.fairchildsemi.com FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET Typical Performance Characteristics (Continued) Figure 12. Transient Thermal Response Curve o ZθJC(t), Thermal Response [ C/W] 1 0.5 0.1 0.2 PDM 0.1 t1 0.05 0.02 o 1. ZθJC(t) = 0.6 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) 0.01 0.01 Single pulse 0.005 -5 10 ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 t2 *Notes: -4 10 -3 -2 10 10 t1, Rectangular Pulse Duration [sec] 5 -1 10 1 www.fairchildsemi.com FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET IG = const. Figure 13. Gate Charge Test Circuit & Waveform VDS RG RL VDS VDD VGS VGS DUT V 10V GS 90% 10% td(on) tr t on td(off) tf t off Figure 14. Resistive Switching Test Circuit & Waveforms VGS Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 6 www.fairchildsemi.com FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 7 www.fairchildsemi.com FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET Mechanical Dimensions Figure 17. TO-247, Molded, 3-Lead, Jedec AB Long Leads Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TO247-0A3 ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 8 www.fairchildsemi.com tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative / In Design Datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I68 ©2014 Fairchild Semiconductor Corporation FCH190N65F Rev. C1 9 www.fairchildsemi.com FCH190N65F — N-Channel SuperFET® II FRFET® MOSFET TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. 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