DMG6602SVTQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS Q1 RDS(on) ID Low On-Resistance TA = +25°C Low Input Capacitance Fast Switching Speed Low Input/Output Leakage 60mΩ @ VGS = 10V 3.4A 100mΩ @ VGS = 4.5V 2.7A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 95mΩ @ VGS = -10V -2.8A Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) 30V Q2 -30V -2.3A 140mΩ @ VGS = -4.5V Description and Applications Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, Case: TSOT26 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Backlighting Terminals Connections: See Diagram DC-DC Converters Power Management Functions Terminals: Finish – Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.013 grams (Approximate) Q1 Q2 D1 D2 TSOT26 G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 Top View Top View S2 P-Channel N-Channel Ordering Information (Note 5) Part Number DMG6602SVTQ-7 DMG6602SVTQ-13 Notes: Case TSOT26 TSOT26 Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 66C Date Code Key Year Code 2010 X 2011 Y Month Code Jan 1 Feb 2 DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 2012 Z Mar 3 2013 A Apr 4 66C = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) YM ADVANCE INFORMATION Device Features and Benefits 2014 B May 5 2015 C Jun 6 2016 D Jul 7 1 of 10 www.diodes.com Aug 8 2017 E Sep 9 2018 F Oct O 2019 G Nov N 2020 H Dec D December 2014 © Diodes Incorporated DMG6602SVTQ Maximum Ratings – Q1 (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS ADVANCE INFORMATION Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = 10V Steady State Steady State Maximum Continuous Body Diode Forward Current (Note 5) Pulsed Drain Current (Note 5) Continuous Drain Current (Note 7) VGS = 4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID ID IS IDM Value 30 ±20 3.4 2.7 2.7 2.2 1.5 25 Unit V V A A A A Maximum Ratings – Q2 (@TA = +25°C unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V Steady State Steady State Maximum Continuous Body Diode Forward Current (Note 7) Pulsed Drain Current (Note 7) Continuous Drain Current (Note 7) VGS = -4.5V TA = +25°C TA = +70°C TA = +25°C TA = +70°C ID ID IS ID Value -30 ±20 -2.8 -2.4 -2.3 -2.1 -1.5 -20 Unit V V A A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) Symbol TA = +25°C TA = +70°C Steady State t<10s TA = +25°C TA = +70°C Steady State t<10s Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range Notes: PD RJA PD RJA RJC TJ, TSTG Value 0.84 0.52 155 109 1.27 0.8 102 71 34 -55 to +150 Units W °C/W W °C/W °C 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 2 of 10 www.diodes.com December 2014 © Diodes Incorporated DMG6602SVTQ Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1.0 ±100 V µA nA VGS = 0V, ID = 250µA VDS = 24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 1.0 RDS (ON) - |Yfs| VSD - 2.3 60 100 1 V Static Drain-Source On-Resistance 38 55 4 0.8 VDS = VGS, ID = 250μA VGS = 10V, ID = 3.1A VGS = 4.5V, ID = 2A VDS = 5V, ID = 3.1A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 290 40 40 1.4 4 9 1.2 1.5 3 5 13 3 400 80 80 6 13 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V Test Condition VDS = 15V, VGS = 0V, f = 1.2MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID = 3.1A nC VDS = 15V, VGS = 10V, ID = 3A VGS = 10V, VDS = 15V, RG = 3Ω, RL = 4.7Ω ns 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 10 10.0 VDS= 5.0V 8 ID, DRAIN CURRENT (A) 8.0 ID, DRAIN CURRENT (A) ADVANCE INFORMATION Electrical Characteristics – Q1 NMOS (@ TA = +25°C unless otherwise stated.) 6.0 4.0 4 2 2.0 0.0 0 6 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 1 Typical Output Characteristics DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 0 5 1 2 3 4 5 V GS, GATE SOURCE VOLTAGE(V) Fig. 2 Typical Transfer Characteristics 3 of 10 www.diodes.com December 2014 © Diodes Incorporated 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE() RDS(ON),DRAIN-SOURCE ON-RESISTANCE() 1 RDS(ON)( ) Ave @ VG=4.5V R DS(ON)( ) Ave @ VG=10V 0.01 0 4 8 12 16 ID, DRAIN SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.16 VGS = 4.5V 0.12 0.08 Ave RDS(ON)() @ 85°C Ave RDS(ON)( ) @ 25°C 0.04 Ave R DS(ON)() @ -55°C 0 0 20 2 4 6 8 ID, DRAIN SOURCE CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 10 0.1 RDS(ON), DRAIN-SOURCE ON-RESISTANCE RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) Ave R DS(ON)() @ 150°C Ave RDS(ON)() @ 125°C 1.6 1.4 1.2 1 0.8 0.08 0.06 0.04 0.02 0 0.6 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 5 On-Resistance Variation with Temperature 2.0 1.6 ID= 1mA 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 8 IS, SOURCE CURRENT (A) ID= 250A 1.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 6 On-Resistance Variation with Temperature 10 2.4 VGS(th), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMG6602SVTQ VSD(V) @ VDS =0V TA = 25C 6 4 2 0 0 4 of 10 www.diodes.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current December 2014 © Diodes Incorporated DMG6602SVTQ 10 1000 VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) CISS Ave (pF) COSS Ave (pF) 100 CRSS Ave (pF) 10 0 5 10 15 20 25 30 8 VDS = 10V ID = 3.0A 6 4 2 0 0 V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 10 Gate Charge 10 100 RDS(on) Limited ID, DRAIN CURRENT (A) ADVANCE INFORMATION f = 1MHz PW = 100µs 10 DC 1 PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 11 SOA, Safe Operation Area DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 100 5 of 10 www.diodes.com December 2014 © Diodes Incorporated DMG6602SVTQ Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -30 - - -1.0 ±100 V µA nA VGS = 0V, ID = -250µA VDS = -24V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) -1.0 RDS (ON) - |Yfs| VSD - -2.3 95 140 -1.0 V Static Drain-Source On-Resistance 73 99 6 -0.8 VDS = VGS, ID = -250μA VGS = -10V, ID = -2.7A VGS = -4.5V, ID = -2A VDS = -5V, ID = -2.7A VGS = 0V, IS = -1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 350 50 45 17.1 4 7 0.9 1.2 4.8 7.3 20 13 420 100 80 6 9 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time mΩ S V pF Ω nC ns Test Condition VDS = -15V, VGS = 0V, f = 1.2MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -15V, VGS = -4.5V, ID = -3A VDS = -15V, VGS = -10V, ID = -3A VGS = -10V, VDS = -15V, RG = 6Ω, RL = 15Ω 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 8.0 8 6.0 6 ID, DRAIN CURRENT (A) Notes: ID, DRAIN CURRENT ADVANCE INFORMATION Electrical Characteristics – Q2 PMOS (@ TA = +25°C unless otherwise stated.) 4.0 2.0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN -SOURCE VOLTAGE(V) Fig. 12 Typical Output Characteristics DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 5 4 2 0 0 6 of 10 www.diodes.com 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE SOURCE VOLTAGE(V) Fig. 13 Typical Transfer Characteristics 5 December 2014 © Diodes Incorporated DMG6602SVTQ RDS(ON), DRAIN-SOURCE ON-RESISTANCE() 0.3 0.25 0.2 0.15 RDS(ON)() Ave @ VG=4.5V 0.1 0.05 RDS(ON)() Ave @ VG=10V 2 4 6 ID, DRAIN SOURCE CURRENT Fig. 14 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 4.5V Ave RDS(ON)( ) @ 150°C 0.16 Ave RDS(ON)( ) @ 125°C 0.12 Ave RDS(ON)( ) @ 85°C 0.08 Ave RDS(ON)( ) @ 25°C 0.04 Ave RDS(ON)( ) @ -55°C 0 8 1.6 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) 0.2 0 0 1.4 1.2 1 0.8 0.6 -50 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( ) RDS(ON),DRAIN-SOURCE ON-RESISTANCE() RDS(ON)() Ave @ VG=2.5V 0.35 0 0.12 0.08 0.04 0.8 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 17 On-Resistance Variation with Temperature 8 IS, SOURCE CURRENT (V) 1.2 8 0.16 2 1.6 2 4 6 ID, DRAIN SOURCE CURRENT (A) Fig. 15 Typical On-Resistance vs. Drain Current and Temperature 0.2 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 16 On-Resistance Variation with Temperature VGS(TH), GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION 0.4 6 4 2 0.4 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Fig. 18 Gate Threshold Variation vs. Ambient Temperature DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 0 0 7 of 10 www.diodes.com 0.2 0.4 0.6 0.8 1 1.2 1.4 VSD, SOURCE -DRAIN VOLTAGE (V) Fig. 19 Diode Forward Voltage vs. Current December 2014 © Diodes Incorporated DMG6602SVTQ 1000 10 -VGS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) 100 COSS Ave(pF) CRSS Ave(pF) 8 VDS = -15 ID = -3A 6 4 2 0 10 0 5 10 15 20 25 30 0 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 20 Typical Junction Capacitance 2 4 6 8 Qg, TOTAL GATE CHARGE (nC) Fig. 21 Gate Charge 10 100 RDS(on) Limited -ID, DRAIN CURRENT (A) PW = 100µs 10 1 DC PW = 10s PW = 1s 0.1 T J(max) = 150°C PW = 100ms PW = 10ms PW = 1ms TA = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board 0.01 0.1 1 10 -V DS, DRAIN-SOURCE VOLTAGE (V) Fig. 22 SOA, Safe Operation Area 100 1 r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION f = 1MHz CISS Ave(pF) D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 164C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Fig. 23 Transient Thermal Resistance 8 of 10 www.diodes.com 10 100 1000 December 2014 © Diodes Incorporated DMG6602SVTQ Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D e1 E E1 L2 c 4x1 e L 6x b A A2 A1 TSOT26 Dim Min Max Typ A 1.00 A1 0.01 0.10 A2 0.84 0.90 D 2.90 E 2.80 E1 1.60 b 0.30 0.45 c 0.12 0.20 e 0.95 e1 1.90 L 0.30 0.50 L2 0.25 θ 0° 8° 4° θ1 4° 12° All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. C C Dimensions Value (in mm) C 0.950 X 0.700 Y 1.000 Y1 3.199 Y1 Y (6x) X (6x) DMG6602SVTQ Document number: DS37643 Rev. 1 - 2 9 of 10 www.diodes.com December 2014 © Diodes Incorporated DMG6602SVTQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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