AP6900GH-HF
Preliminary
Advanced Power
Electronics Corp.
DUAL N-CHANNEL ENHANCEMENT
MODE POWER MOSFET
CH-1
BVDSS
30V
▼ Fast Switching Performance
RDS(ON)
6.2mΩ
▼ Two Independent Device
▼ Halogen Free & RoHS Compliant Product
ID
BVDSS
RDS(ON)
ID
72A
30V
10mΩ
45A
▼ Simple Drive Requirement
CH-2
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
D1 (TAB1)
D2 (TAB2)
S1
SDPAKTM used APEC innovated package and provides two
independent device that is suitable and optimum for DC/DC
power application.
G1
S2
G2
SDPAKTM
D2
D1
G2
G1
S1
S2
Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Channel-1
Channel-2
VDS
Drain-Source Voltage
30
30
V
VGS
Gate-Source Voltage
+ 20
+ 20
V
ID@TC=25℃
Continuous Drain Current
ID@TA=25℃
ID@TA=70℃
72
45
A
3
18
14.1
A
3
14
11.2
A
72
60
A
Continuous Drain Current
Continuous Drain Current
1
IDM
Pulsed Drain Current
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
W
3
Thermal Data
Symbol
Parameter
Rthj-c (CH-1)
Maximum Thermal Resistance, Junction-case
Rthj-c (CH-2)
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Unit
2.5
℃/W
4.0
℃/W
42
℃/W
1
20090420pre
AP6900GH-HF
CH-1 Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=18A
-
-
6.2
mΩ
VGS=4.5V, ID=12A
-
-
12.5
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=18A
-
32
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=18A
-
10
16
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
2.5
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
5.5
nC
VDS=15V
-
7
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=18A
-
60
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
18
-
ns
tf
Fall Time
RD=0.833Ω
-
5
-
ns
Ciss
Input Capacitance
VGS=0V
-
945
1510
pF
Coss
Output Capacitance
VDS=25V
-
295
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
110
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.3
2
Ω
Min.
Typ.
IS=2.5A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
IS=10A, VGS=0V,
-
30
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
27
-
nC
2
AP6900GH-HF
o
CH-2 Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Min.
Typ.
Max. Units
VGS=0V, ID=250uA
30
-
-
V
VGS=10V, ID=12A
-
-
10
mΩ
VGS=4.5V, ID=8A
-
-
22
mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
V
gfs
Forward Transconductance
VDS=10V, ID=12A
-
30
-
S
IDSS
Drain-Source Leakage Current
VDS=30V, VGS=0V
-
-
10
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
ID=12A
-
5.7
9.2
nC
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=24V
-
1.4
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
3.2
-
nC
2
td(on)
Turn-on Delay Time
VDS=15V
-
6
-
ns
tr
Rise Time
ID=12A
-
56
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=10V
-
14
-
ns
tf
Fall Time
RD=1.25Ω
-
3.5
-
ns
Ciss
Input Capacitance
VGS=0V
-
505
810
pF
Coss
Output Capacitance
VDS=25V
-
180
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
70
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.6
4
Ω
Min.
Typ.
IS=2.5A, VGS=0V
-
-
1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
Forward On Voltage
2
2
Test Conditions
Max. Units
trr
Reverse Recovery Time
Is=10A, VGS=0V,
-
24
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
18
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Rthja is determined with the device, mounted on 2oz FR4 board t ≦10s.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
3
AP6900GH-HF
Channel-1
80
80
ID , Drain Current (A)
T A = 25 C
10V
7.0V
6.0V
5.0V
60
V GS =4.0V
40
T A = 150 o C
ID , Drain Current (A)
o
20
10V
7.0V
6.0V
5.0V
60
V GS =4.0V
40
20
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
5
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
13
1.6
I D = 18 A
V G =10V
I D = 12 A
o
T A =25 C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
11
9
1.2
1.0
7
0.8
5
0.6
2
4
6
8
10
-50
V GS ,Gate-to-Source Voltage (V)
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
20
Normalized VGS(th) (V)
IS(A)
16
12
T j =150 o C
T j =25 o C
8
1.5
1
0.5
4
0
0
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
4
AP6900GH-HF
Channel-1
10
f=1.0MHz
1600
I D = 18 A
V DS =1 5 V
V DS = 18 V
V DS =24V
6
1200
C (pF)
VGS , Gate to Source Voltage (V)
8
C iss
800
4
400
C oss
2
C rss
0
0
0
4
8
12
16
1
20
5
Q G , Total Gate Charge (nC)
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
Normalized Thermal Response (Rthja)
Duty factor=0.5
0.2
0.1
0.1
0.05
0.02
PDM
0.01
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + T a
Rthja=75 oC/W
0.001
0.01
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
5
AP6900GH-HF
Channel-2
50
50
o
o
40
ID , Drain Current (A)
ID , Drain Current (A)
40
10V
7.0V
6.0V
5.0V
T A = 150 C
10V
7.0V
6.0V
5.0V
T A =25 C
30
V GS =4.0V
20
10
30
V GS =4.0V
20
10
0
0
0
1
2
3
4
0
1
V DS , Drain-to-Source Voltage (V)
2
3
4
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
24
1.6
ID=8A
I D =12A
V G =10V
T A =25 o C
1.4
Normalized RDS(ON)
RDS(ON) (mΩ)
20
16
1.2
1.0
12
0.8
0.6
8
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
12
1.6
Normalized VGS(th) (V)
10
IS(A)
8
o
o
T j =150 C
T j =25 C
6
4
1.2
0.8
2
0
0.4
0
0.2
0.4
0.6
0.8
1
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j ,Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
6
AP6900GH-HF
Channel-2
f=1.0MHz
800
I D = 12
A
8
600
V DS = 15 V
V DS = 18 V
V DS = 24 V
6
C (pF)
VGS , Gate to Source Voltage (V)
10
C iss
400
4
C oss
200
2
C rss
0
0
0
2
4
6
8
1
10
5
9
13
17
21
25
29
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
10
ID (A)
1ms
10ms
1
100ms
1s
0.1
o
T A =25 C
Single Pulse
DC
0.01
Normalized Thermal Response (Rthja)
Duty factor=0.5
100us
0.2
0.1
0.1
0.05
0.02
0.02
0.01
PDM
t
0.01
Single Pulse
T
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=75oC/W
0.001
0.01
0.1
1
10
100
0.0001
0.001
0.01
V DS , Drain-to-Source Voltage (V)
Fig 9. Maximum Safe Operating Area
VDS
90%
0.1
1
10
100
1000
t , Pulse Width (s)
Fig 10. Effective Transient Thermal Impedance
VG
QG
4.5V
QGS
QGD
10%
VGS
td(on) tr
td(off) tf
Fig 11. Switching Time Waveform
Charge
Q
Fig 12. Gate Charge Waveform
7