DG636E www.vishay.com Vishay Siliconix 0.3 pC Charge Injection, 100 pA Leakage CMOS ± 5 V / 5 V / 3 V Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636E is a dual SPDT CMOS, analog switch, designed to operate from a +3 V to +16 V single supply, or from ± 3 V to ± 8 V, dual supplies. The DG636E is fully specified at +3 V, +5 V, and ± 5 V. • Ultra low charge injection (Less than ± 0.3 pC, typ. over the full analog signal range) • Leakage current < 0.5 nA max. at 85 °C (for DG636EEQ-T1-GE4) The DG636E offers ultralow charge injection less than ± 0.4 pC over the entire signal range and leakage currents of 13 pA typical at 25 °C. It offers on resistance of 63 typ., and low parasitic capacitance of 3.7 pF source off, and 8.4 pF Drain on. The part is ideal for analog front end, data acquisition and sample and hold designs providing fast and precision signal switching. • Low switch capacitance (CS(off), 3.7 pF typ.) • Fully specified with single supply operation at 3 V, 5 V, and dual supplies at ± 5 V • CMOS / TTL compatible • 700 MHz, -3 dB bandwidth The DG636E switches one of two inputs to a common output as determined by the 3-bit binary address lines: A0, A1, and EN. Each switch conducts equally well in both directions when on, blocks input voltages up to the supply level when off, and exhibits break before make switching action. • Excellent isolation and crosstalk performance (typ. > -60 dB at 10 MHz) All control logic inputs have guaranteed 2 V logic high limits when operating from +5 V or ± 5 V supplies and 1.4 V when operating from a 3 V supply. • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 • Fully specified from -40 °C to +85 °C and -40 °C to +125 °C • 14 pin TSSOP and 16 pin miniQFN package (1.8 mm x 2.6 mm) APPLICATIONS The DG636E operating temperature range is specified from -40 °C to +125 °C. It is available in 14 lead TSSOP and the space saving 1.8 mm x 2.6 mm miniQFN package. • Data acquisition systems • Medical instruments • Precision instruments • Communications systems • Automated test equipment • Sample and hold circuit • Relay replacement FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG636E mQFN-16 Yxx Pin 1 Device Marking: Yxx for DG636E (miniQFN16) xx = Date/Lot Traceability Code ENABLE 1 V- DG636E TSSOP14 A0 NC NC A1 16 15 14 13 14 A1 13 GND 3 12 V+ A0 1 ENABLE 2 V- 12 GND 2 11 V+ S1A 3 10 S2A S1A 4 11 S2A S1B 4 9 S2B S1B 5 10 S2B 8 D1 6 9 D2 D2 NC 7 8 NC Logic 5 D1 6 77 NC NC Top View Logic Top View ENABLE = Hi, all switches are controlled by addr pins. ENABLE = Lo, all switches are off. S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix TRUTH TABLE SELECTED INPUT ON SWITCHES ENABLE INPUT A1 A0 DG636E L X X All Switches Open H L L D1 to S1A, D2 to S2A H L H D1 to S1B, D2 to S2A H H L D1 to S1A, D2 to S2B H H H D1 to S1B, D2 to S2B ORDERING INFORMATION TEMP. RANGE -40 °C to +125 °C a PACKAGE PART NUMBER 14 pin TSSOP DG636EEQ-T1-GE4 16 pin miniQFN DG636EEN-T1-GE4 Note a. -40 °C to +85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER LIMIT V+ to V- -0.3 to +18 GND to V- 18 (V-) -0.3 to (V+) + 0.3 or 30 mA, whichever occurs first VS, VD Digital inputs a 30 Peak current, S or D (pulsed 1 ms, 10 % duty cycle) 100 Storage temperature -65 to +150 14 pin TSSOP c 450 16 pin miniQFN d, e 525 14 pin TSSOP 178 16 pin miniQFN 152 ESED / HBM EIA / JESD22-A114-A 2K ESD / CDM EIA / JESD22-C101-A 1K JESD78 300 Thermal resistance (package) b Latch up V (GND) -0.3 to (V+) + 0.3 Continuous current (any terminal) Power dissipation (package) b UNIT mA °C mW °C/W V mA Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 5.6 mW/°C above 70 °C d. Derate 6.6 mW/°C above 70 °C e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 2 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES (V+ = 5 V, V- = -5 V) PARAMETER TEST CONDITIONS UNLESS OTHERWISE SYMBOL SPECIFIED TEMP. b V+ = 5 V, V- = -5 V VIN A0, A1, AND ENABLE = 2 V, 0.8 V a -40 °C to +125 °C TYP. c MIN. d -40 °C to +85 °C MAX. d MIN. d MAX. d UNIT Analog Switch Analog signal range e VANALOG Drain-source On-resistance RDS(on) IS = 1 mA, VD = -3 V, 0 V, +3 V On-resistance match RDS(on) IS = 1 mA, VD = ± 3 V On-resistance flatness Rflat(on) IS = 1 mA, VD = -3 V, 0 V, +3 V Switch off leakage current (for 14 pin TSSOP) Switch on leakage current (for 14 pin TSSOP) Switch off leakage current (for 16 pin miniQFN) Switch on leakage current (for 16 pin miniQFN) IS(off) ID(off) ID(on) IS(off) ID(off) V+ = 5.5 V, V- = -5.5 V 4.5 V VD = ± 4.5 V, VS = V+ = 5.5 V, V- = -5.5 V, VD = VS = ± 4.5 V V+ = 5.5 V, V- = -5.5 V VD = ± 4.5 V, VS = 4.5 V Full - -5 5 -5 5 Room 63 - 96 - 96 Full - - 129 - 115 Room 0.3 - 2 - 2 Full - - 4 - 3 Room 15 - 19 - 19 Full - - 24 - 23 Room ± 0.0004 -0.1 0.1 -0.1 0.1 Full - -18 18 -0.5 0.5 Room ± 0.001 -0.1 0.1 -0.1 0.1 Full - -18 18 -0.5 0.5 Room ± 0.013 -0.1 0.1 -0.1 0.1 Full - -18 18 -0.5 0.5 Room ± 0.0004 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.001 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.013 -1 1 -1 1 Full - -18 18 -2 2 ID(on) V+ = 5.5 V, V- = -5.5 V, VD = VS = ± 4.5 V Input current, VIN low IIL VIN A0, A1, and ENABLE Under test = 0.8 V Full 0.00001 -0.1 0.1 -0.1 0.1 Input current, VIN high IIH VIN A0, A1, and ENABLE Under test = 2 V Full 0.00001 -0.1 0.1 -0.1 0.1 Input capacitance CIN f = 1 MHz Room 5 - - - - tTRANS VS(CLOSE) = 3 V, VS(OPEN) = 0 V, RL = 300 , CL = 35 pF Room 26 - 52 - 52 Full - - 62 - 59 Room 24 - 46 - 46 V nA Digital Control μA pF Dynamic Characteristics Transition time Turn-on time Turn-off time tON tOFF RL = 300 , CL = 35 pF VS = ± 3 V Full - - 58 - 52 Room 19 - 55 - 55 Full - - 61 - 59 5 - - - - ns Break-before-make time tBBM VS = 3 V RL = 300 , CL = 35 pF Room Full - 2 - 2 Charge injection e QINJ VGEN = 0 V, RGEN = 0 , CL = 1 nF Room -0.33 - - - - Off isolation e OIRR RL = 50 , CL = 5 pF, f = 10 MHz Room -63 - - - - dB Bandwidth e BW RL = 50 , CL = 5 pF Room 700 - - - - MHz XTALK RL = 50 , CL = 5 pF, f = 10 MHz Room -62 - - - - dB Room 3.7 - - - - f = 1 MHz Room 4.4 - - - - Room 8.4 - - - - Channel-to-channel crosstalk e Source off capacitance e CS(off) Drain off capacitance e CD(off) Drain on capacitance e CD(on) S17-1518-Rev. B, 09-Oct-17 pC pF Document Number: 75621 3 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES (V+ = 5 V, V- = -5 V) PARAMETER TEST CONDITIONS UNLESS OTHERWISE SYMBOL SPECIFIED TEMP. b V+ = 5 V, V- = -5 V VIN A0, A1, AND ENABLE = 2 V, 0.8 V a -40 °C to +125 °C TYP. c -40 °C to +85 °C MIN. d MAX. d MIN. d MAX. d - 0.5 - 0.5 UNIT Power Supply Power supply current Room I+ Negative supply current I- Ground current IGND VIN = 0 V or V+ 0.0004 Full - - 1 - 1 Room -0.0004 -0.5 - -0.5 - Full - -1 - -1 - Room -0.0004 -0.5 - -0.5 - Full - -1 - -1 - μA Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 5.6 mW/°C above 70 °C d. Derate 6.6 mW/°C above 70 °C e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 4 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY (V+ = 5 V, V- = 0 V) TEST CONDITIONS UNLESS OTHERWISE SYMBOL SPECIFIED TEMP.b V+ = 5 V, V- = 0 V VIN A0, A1, AND ENABLE = 2 V, 0.8 V a PARAMETER -40 °C to +125 °C -40 °C to +85 °C TYP. c MIN. d MAX. d MIN. d MAX. d UNIT Analog Switch Analog signal range e VANALOG Drain-source On-resistance RDS(on) IS = 1 mA, VD = +3.5 V On-resistance match RDS(on) IS = 1 mA, VD = +3.5 V On-resistance flatness Rflat(on) IS = 1 mA, VD = 0 V, +3.5 V IS(off) V+ = 5.5 V, V- = 0 V VD = 1 V / 4.5 V, VS = 4.5 V / 1 V Switch off leakage current (for 14 pin TSSOP) ID(off) Switch on leakage current (for 14 pin TSSOP) ID(on) IS(off) Switch off leakage current (for 16 pin miniQFN) ID(off) Switch on leakage current (for 16 pin miniQFN) V+ = 5.5 V, V- = 0 V VD = VS = 1 V / 4.5 V V+ = 5.5 V, V- = 0 V VD = 1 V / 4.5 V, VS = 4.5 V / 1 V Full - - 5 - 5 Room 131 - 176 - 176 Full - - 224 - 203 Room 0.2 - 3.4 - 3.4 Full - - 5 - 4 Room 34 - 52 - 52 Full - - 58 - 56 Room ± 0.0002 -0.1 0.1 -0.1 0.1 Full - -18 18 -0.5 0.5 Room ± 0.0004 -0.1 0.1 -0.1 0.1 Full - -18 18 -0.5 0.5 Room ± 0.0003 -0.1 0.1 -0.1 0.1 Full - -18 18 -0.5 0.5 Room ± 0.0002 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.0004 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.0003 -1 1 -1 1 Full - -18 18 -2 2 ID(on) V+ = 5.5 V, V- = 0 V, VD = VS = 1 V / 4.5 V Input current, VIN low IIL VIN A0, A1, and ENABLE Under test = 0.8 V Full 0.00001 -0.1 0.1 -0.1 0.1 Input current, VIN high IIH VIN A0, A1, and ENABLE Under test = 2 V Full 0.00001 -0.1 0.1 -0.1 0.1 Input capacitance CIN f = 1 MHz Room 5 - - - - Room 43 - 70 - 70 Full - - 161 - 124 Room 33 - 55 - 55 Full - - 82 - 61 Room 23 - 45 - 45 V nA Digital Control μA pF Dynamic Characteristics Transition time tTRANS Turn-on time tON Turn-off time tOFF Break-before-make-time Charge injection e tBMM QINJ Off-isolation e OIRR Channel-to-channel crosstalk e XTALK Bandwidth e BW Source off capacitance e CS(off) Drain off capacitance e CD(off) e CD(on) Drain on capacitance S17-1518-Rev. B, 09-Oct-17 VS(CLOSE) = 3 V, VS(OPEN) = 0 V, RL = 300 , CL = 35 pF CL = 1 nF, RGEN = 0 , VGEN = 0 V f = 10 MHz, RL = 50 , CL = 5 pF RL = 50 , CL = 5 pF f = 1 MHz Full - - 52 - 50 Room 17 - - - - Full - 3 - 3 - Full -0.04 - - - - Room -64 - - - - Room -63 - - - - Room 587 - - - - 4 - - - - 4.7 - - - - 9 - - - - Room ns pC dB MHz pF Document Number: 75621 5 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY (V+ = 5 V, V- = 0 V) PARAMETER TEST CONDITIONS UNLESS OTHERWISE SYMBOL SPECIFIED TEMP.b V+ = 5 V, V- = 0 V VIN A0, A1, AND ENABLE = 2 V, 0.8 V a -40 °C to +125 °C -40 °C to +85 °C TYP. c MIN. d MAX. d - 0.5 MIN. d MAX. d UNIT Power Supply Power supply current Negative supply current Ground current Room I+ IIGND VIN = 0 V or V+ 0.0002 - 0.5 Full - - 1 - 1 Room -0.0002 -0.5 - -0.5 - Full - -1 - -1 - Room -0.0002 -0.5 - -0.5 - Full - -1 - -1 - μA Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 5.6 mW/°C above 70 °C d. Derate 6.6 mW/°C above 70 °C e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 6 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY (V+ = 3 V, V- = 0 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED TEMP. b V+ = 3 V, V- = 0 V VIN A0, A1, AND ENABLE = 1.4 V, 0.6 V a -40 °C to +125 °C -40 °C to +85 °C TYP. c MIN. d MAX. d MIN. d MAX. d UNIT Analog Switch Analog signal range e VANALOG Drain-source On-resistance On-resistance match RDS(on) RDS(on) Switch off leakage current (for 14 pin TSSOP) Switch on leakage current (for 14 pin TSSOP) Switch off leakage current (for 16 pin miniQFN) Switch on leakage current (for 16 pin miniQFN) IS(off) ID(off) ID(on) IS(off) ID(off) IS = 1 mA, VD = +1.5 V IS = 1 mA, VD = +1.5 V V+ = 3.3 V, V- = 0 V VD = 1 V / 3 V, VS = 3 V / 1 V V+ = 3.3 V, V- = 0 V VD = VS = 1 V / 3 V V+ = 3.3 V, V- = 0 V VD = 1 V / 3 V, VS = 3 V / 1 V Full - - 3 - 3 Room 309 - 428 - 428 Full - - 521 - 484 Room 3 - 12 - 12 Full - - 18 - 16 Room ± 0.0002 -0.1 0.1 -0.1 0.1 0.5 Full - -18 18 -0.5 Room ± 0.0002 -0.1 0.1 -0.1 0.1 Full - -18 18 -0.5 0.5 Room ± 0.0002 -0.1 0.1 -0.1 0.1 Full - -18 18 -0.5 0.5 Room ± 0.0002 -1 1 -1 1 2 Full - -18 18 -2 Room ± 0.0002 -1 1 -1 1 Full - -18 18 -2 2 Room ± 0.0002 -1 1 -1 1 Full - -18 18 -2 2 ID(on) V+ = 3.3 V, V- = 0 V, VD = VS = 1 V / 3 V Input current, VIN low IIL VIN A0, A1, and ENABLE Under test = 0.6 V Full 0.000006 -1 1 -1 1 Input current, VIN high IIH VIN A0, A1, and ENABLE Under test = 1.4 V Full 0.000006 -1 1 -1 1 Input capacitance CIN f = 1 MHz Room 5 - - - - Room 116 - 149 - 149 Full - - 187 - 174 Room 115 - 138 - 138 Full - - 163 - 158 Room 49 - 71 - 71 77 V nA Digital Control μA pF Dynamic Characteristics Transition time tTRANS Turn-on time tON Turn-off time tOFF Break-before-make time tBMM Charge injection e QINJ Off-isolation e OIRR Channel-to-channel crosstalk e XTALK Bandwidth e Source off capacitance e BW CL = 1 nF, RGEN = 0 , VGEN = 0 V f = 10 MHz, RL = 50 , CL = 5 pF RL = 50 , CL = 5 pF CS(off) Drain off capacitance e CD(off) Drain on capacitance e CD(on) S17-1518-Rev. B, 09-Oct-17 VS(CLOSE) = 3 V, VS(OPEN) = 0 V, RL = 300 , CL = 35 pF f = 1 MHz Full - - 81 - Room 55 - - - - Full - 5 - 5 - Full 0.04 - - - - Room -64 - - - - Room -64 - - - - Room 453 - - - - Room 4.2 - - - - Room 4.9 - - - - Room 9.4 - - - - ns pC dB MHz pF Document Number: 75621 7 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY (V+ = 3 V, V- = 0 V) PARAMETER SYMBOL TEST CONDITIONS UNLESS OTHERWISE SPECIFIED TEMP. b V+ = 3 V, V- = 0 V VIN A0, A1, AND ENABLE = 1.4 V, 0.6 V a -40 °C to +125 °C -40 °C to +85 °C TYP. c MIN. d MAX. d MIN. d MAX. d - 0.5 - 0.5 UNIT Power Supply Power supply current Room I+ Negative supply current I- Ground current IGND VIN = 0 V or V+ 0.0001 Full - - 1 - 1 Room -0.0001 -0.5 - -0.5 - Full - -1 - -1 - Room -0.0001 -0.5 - -0.5 - Full - -1 - -1 - μA Notes a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings b. All leads welded or soldered to PC board c. Derate 5.6 mW/°C above 70 °C d. Derate 6.6 mW/°C above 70 °C e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 8 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 400 95 1000 1st line 2nd line 250 200 V+ = +5 V 150 100 V+ = +13.2 V 100 2nd line RON - On-Resistance (Ω) V+ = +3 V 300 85 75 1000 65 V± = ± 5 V 55 100 45 V± = ± 6.2 V 35 50 IS = 1 mA 0 IS = 1 mA 25 10 10 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 VD - Analog Voltage (V) 2nd line VD - Analog Voltage (V) 2nd line On-Resistance vs. VD (Single Supply Voltage) On-Resistance vs. VD (Dual Supply Voltage) Axis Title Axis Title 10000 250 10000 V+ = +5 V IS = 1 mA 380 +125 °C 230 +85 °C 100 180 +25 °C 130 -40 °C V+ = +3 V IS = 1 mA 80 0 1000 175 +85 °C 150 125 +25 °C 100 100 -40 °C 75 10 1 +125 °C 200 1st line 2nd line 1000 280 2nd line RON - On-Resistance (Ω) 330 1st line 2nd line 2 50 10 0 3 1 2 3 4 5 VD - Analog Voltage (V) 2nd line VD - Analog Voltage (V) 2nd line On-Resistance vs. Analog Voltage and Temperature On-Resistance vs. Analog Voltage and Temperature Axis Title Axis Title 150 10000 125 1st line 2nd line 75 1000 +125 °C 100 +85 °C 100 50 +25 °C -40 °C 25 10 -5 -4 -3 -2 -1 0 1 2 3 4 5 2nd line Loss, OIRR, XTALK (dB) V± = ±5 V IS = 1 mA 10 0 -10 -20 -30 -40 -50 -60 -70 XTALK -80 -90 -100 OIRR -110 100K 1M 10000 Loss 1000 1st line 2nd line 2nd line RON - On-Resistance (Ω) 225 2nd line RON - On-Resistance (Ω) 1st line 2nd line 350 2nd line RON - On-Resistance (Ω) 10000 10000 100 V± = ±5 V 10M 100M 10 1G VD - Analog Voltage (V) 2nd line Frequency (Hz) 2nd line On-Resistance vs. Analog Voltage and Temperature Insertion Loss, Off-Isolation, Crosstalk vs. Frequency S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 9 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 2100 IS(OFF), VD = 1 V, VS = 3 V 1000 ID(OFF), VD = 3 V, VS = 1 V 450 IS(OFF), VD = 3 V, VS = 1 V 100 ID(OFF), VD = 1 V, VS = 3 V 200 -50 V+ = +3.3 V -300 -40 -20 0 40 60 1000 1100 850 600 IS(OFF), VD = 4.5 V, VS = 1 V 350 ID(OFF), VD = 1 V, VS = 4.5 V 10 V+ = +5.5 V ID(ON), VD = 1 V -400 -40 -20 80 100 120 140 0 20 Leakage Current vs. Temperature Axis Title 1.0 0 -1000 100 IS(OFF), VD = 4.5 V, VS = -4.5 V ID(OFF), VD = -4.5 V, VS = 4.5 V ID(ON), VD = -4.5 V V± = ±5.5 V -40 -20 0 20 40 60 2nd line QINJ - Charge Injection (pC) 1000 1000 -2000 10000 0.8 1st line 2nd line 2nd line Leakage Current (pA) 10000 ID(ON), VD = 4.5 V 0.6 0.4 1000 0.2 0 -0.2 100 -0.4 V±= ±5 V -0.6 -0.8 -1.0 10 10 -6 -5 -4 -3 -2 -1 80 100 120 140 0 1 2 3 4 5 Temperature (°C) 2nd line VS - Analog Voltage (V) 2nd line Leakage Current vs. Temperature Charge Injection vs. Analog Voltage 6 Axis Title 10000 2.2 10000 -40 °C to +125 °C -40 °C to +125 °C VINL = 125 °C 100 10 2 3 4 5 6 7 8 9 10 11 12 13 14 1.8 1000 VINH = -40 °C 1.6 1st line 2nd line 1000 2nd line VT - Switching Threshold (V) 2.0 VINH = -40 °C 1st line 2nd line 2nd line VT - Switching Threshold (V) V+ = 5 V V+ = 3 V Axis Title 3.0 2.8 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 80 100 120 140 Leakage Current vs. Temperature ID(OFF), VD = 4.5 V, VS = -4.5 V -3000 10 60 Temperature (°C) 2nd line IS(OFF), VD = -4.5 V, VS = 4.5 V 2000 40 Temperature (°C) 2nd line Axis Title 3000 100 100 -150 ID(ON), VD = 1 V 20 ID(OFF), VD = 4.5 V, VS = 1 V 1350 1st line 2nd line 700 2nd line Leakage Current (pA) ID(ON), VD = 3 V 950 ID(ON), VD = 4.5 V 1600 1st line 2nd line 2nd line Leakage Current (pA) 1200 10000 IS(OFF), VD = 1 V, VS = 4.5 V 1850 1st line 2nd line 10000 1.4 1.2 100 1.0 VINL = 125 °C 0.8 0.6 10 2 3 4 5 6 7 V+ - Single Supply Voltage (V) 2nd line V± - Dual Supply Voltage (V) 2nd line Switching Threshold vs. Supply Voltage Switching Threshold vs. Supply Voltage S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 10 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Axis Title Axis Title 10000 1000 1 1st line 2nd line 2nd line I+ - Supply Current (μA) 10 0.1 0.01 100 0.001 0.0001 2nd line I+, I-, IGND - Supply Current (µA) V+ = 5 V 100 10000 10 000 I+ V±= ±5 V 1000 100 1000 10 1 I- 0.1 IGND 0.01 100 0.001 0.0001 0.00001 10 100 1000 10K 100K 1M 10 10M 0.00001 10 1000 Input Switching Frequency (Hz) 2nd line Supply Current vs. Switching Frequency Supply Current vs. Switching Frequency Axis Title Axis Title 150 100 100 10000 130.0 1000 110.0 1st line 2nd line 1st line 2nd line 1000 200 2nd line I+ - Supply Current (µA) V+ = +3 V VIN = V+ or GND 250 150.0 10000 V+ = +5 V VIN = V+ or GND 300 90.0 100 70.0 50 V+ = +5 V VIN = 2.0 V 0 10 -40 -20 0 20 40 60 50.0 20 40 60 80 100 120 140 Temperature (°C) 2nd line Supply Current vs. Temperature Supply Current vs. Temperature Axis Title 10 000 100 V+ = 5 V 1000 1st line 2nd line 1 0.1 0.01 V+ = 3.0 V 100 0.0001 0.00001 0.000001 10 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2nd line tON(EN), tOFF(EN) - Switching Time (ns) 1000 10 10000 60 10000 0 0 Temperature (°C) 2nd line Axis Title 0.001 10 -40 -20 80 100 120 140 V+ = +5 V, tON 50 40 V± = ±5 V, tON V+= +5 V, tOFF 30 20 100 V± = ±5 V, tOFF 10 0 10 -50 0 50 100 VIN, A0, A1 (V) line Temperature (°C) 2nd line Supply Current vs. Enable Input Voltage Switching Time vs. Temperature S17-1518-Rev. B, 09-Oct-17 1000 1st line 2nd line 2nd line I+ - Supply Current (nA) 10 10M 100K Input Switching Frequency (Hz) 2nd line 350 2nd line I+ - Supply Current (µA) 1st line 2nd line 1000 150 Document Number: 75621 11 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ t r < 5 ns t f < 5 ns VCC V+ 50 Ω A0 S1A or S2A A1 S2A or S2B VS1A or VS2A VA0,A1 50 % 0V VS2A or VS2B VS1A or VS2A V+ VO D1 or D2 ENABLE V- GND 300 Ω VO 50 % 90 % 35 pF t TRANS t TRANS V- Fig. 1 - Transition Time V+ A0 t r < 5 ns t f < 5 ns VCC V+ V+ S1A or S2A VENABLE 50 % 0V A1 S1B or S2B VS1A or VS2A 50 Ω GND VO D1 or D2 ENABLE V- 300 Ω 90 % 90 % VO 50 % 35 pF 0V t OFF t ON V- S1A or S2A ON Fig. 2 - Enable Switching Time V+ tr < 5 ns tf < 5 ns VCC V+ SxA - SxB A0 50 Ω V+ VA0,A1 50 % 0V A1 VSxA or VSxB 80 % + V ENABLE GND VO D1 or D2 V- 300 Ω VO 35 pF 0V V- tD Fig. 3 - Break-Before-Make S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 12 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DG636E www.vishay.com Vishay Siliconix TEST CIRCUITS V+ t r < 5 ns t f < 5 ns V+ VCC A0 Channel Select ON OFF VENABLE A1 OFF 0V Rg SxA or SxB VO Vg V GND ΔVO VO D1 or D2 ENABLE - CL 1 nF Charge Injection = ΔVO X CL V- Fig. 4 - Charge Injection V+ V+ Network Analyzer V+ Network Analyzer V+ VIN A0 VIN A0 S1A or S2A A1 Rg = 50 Ω Vg SxA or SxB A1 Vg VOUT V+ GND VOUT D1 or D2 ENABLE Rg = 50 Ω D1 or D2 ENABLE V- 50 Ω GND V- V- 50 Ω V- Insertion Loss = 20 log VOUT Off Isolation = 20 log VIN Fig. 5 - Insertion Loss VOUT VIN Fig. 7 - Off-Isolation V+ V+ Network Analyzer V+ S1A or S2A A0 VIN A1 Vg Rg = 50 V+ Channel Select A0 S1A or S2A | to | S2A or S2B A1 D1 or D2 VOUT 50 Ω V+ S1B or S2B ENABLE V- GND 50 Ω V+ D1 or D2 ENABLE GND Impedance Analyzer V- V- Cross Talk = 20 log VOUT VIN Fig. 6 - Crosstalk V- Fig. 8 - Source / Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see www.vishay.com/ppg?75621. S17-1518-Rev. B, 09-Oct-17 Document Number: 75621 13 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix Thin miniQFN16 Case Outline B 12 0.10 C Terminal tip (4) 16 x b D A 11 9 9 10 10 11 0.10 M C A B 0.05 M C 12 13 8 8 13 14 7 7 14 6 6 15 5 5 E 15 16 1 2 3 4 16 4 Pin #1 identifier (5) 15 x L 0.10 C Top view 3 2 L1 1 e Bottom view 0.10 C C A Seating plane 0.10 C A3 Side view DIMENSIONS MILLIMETERS (1) INCHES MIN. NOM. MAX. MIN. NOM. MAX. A 0.50 0.55 0.60 0.020 0.022 0.024 A1 0 - 0.05 0 - 0.002 A3 0.15 ref. b 0.15 D 2.50 e 0.006 ref. 0.20 0.25 0.006 2.60 2.70 0.098 0.40 BSC E 1.70 1.80 0.008 0.010 0.102 0.106 0.016 BSC 1.90 0.067 0.071 0.075 L 0.35 0.40 0.45 0.014 0.016 0.018 L1 0.45 0.50 0.55 0.018 0.020 0.022 N (3) 16 16 Nd (3) 4 4 (3) 4 4 Ne Notes (1) Use millimeters as the primary measurement. (2) Dimensioning and tolerances conform to ASME Y14.5M. - 1994. (3) N is the number of terminals. Nd and Ne is the number of terminals in each D and E site respectively. (4) Dimensions b applies to plated terminal and is measured between 0.15 mm and 0.30 mm from terminal tip. (5) The pin 1 identifier must be existed on the top surface of the package by using identification mark or other feature of package body. (6) Package warpage max. 0.05 mm. ECN: T16-0226-Rev. B, 09-May-16 DWG: 6023 Revision: 09-May-16 Document Number: 64694 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information Vishay Siliconix 14L TSSOP 3 D e CL 14 Notes: 1. All dimensions are in millimeters (angles in degrees) 2. Dimensioning and tolerancing per ANSI Y14.5M-1982 3 Dimension ‘D’ does not include mold flash, protrusions or gate burrs 4 Dimension ‘E1’ does not include internal flash or protrusion 5 Dimension ‘b’ does not include dambar protrusion 6 Cross section B to B to be determined at 0.10 mm to 0.25 mm from the lead tip 4 CL E1 Pin 1 ID mark 1 2 E 3 A A2 Detail ‘A’ B 6 Seating Plane B A1 b R 5 b Gauge Plane c1 0.25 R1 c Seating Plane θ1 b1 L Detail ‘B to B’ Detail ‘A’ L1 SYMBOL MINIMUM NOMINAL MAXIMUM 1.20 A - - A1 0.05 - 0.15 A2 0.80 0.90 1.05 D 4.9 5.0 5.1 E1 4.3 4.4 4.5 E 6.2 6.4 6.6 0.75 L 0.45 0.60 R 0.09 - - R1 0.09 - - b 0.19 - 0.30 b1 0.19 0.22 0.25 c 0.09 - 0.20 c1 0.09 - 0.16 θ1 0° - 8° L1 1.0 ref. e 0.65 BSC ECN: T-07766-Rev. A, 14-Jan-08 DWG: 5962 Document Number: 69938 Revision: 14-Jan-08 www.vishay.com 1 PAD Pattern Vishay Siliconix RECOMMENDED MINIMUM PADS FOR MINI QFN 16L 0.562 (0.0221) 0.400 (0.0157) 0.225 (0.0089) 1 2.900 (0.1142) 0.463 (0.0182) 1.200 (0.0472) 2.100 (0.0827) Mounting Footprint Dimensions in mm (inch) Document Number: 66557 Revision: 05-Mar-10 www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000