[ /Title (FSYC 9055D, FSYC 9055R) /Subject (Radiation Hardened, SEGR Resistant PChannel Power MOSFETs) /Autho r () /Keywords (Radiation Hardened, SEGR Resistant PChannel Power MOSFETs) /Creator () /DOCI FSYC9055D, FSYC9055R UCT CT ROD PRODU P E T E E T R L U 5 O OBS SUBSTITSTYC905 F E , 55D SIBL POS STYC90 F July 1999 Features Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description • 59A, -60V, rDS(ON) = 0.027Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed. • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias The Harris portfolio of SEGR resistant radiation hardened MOSFETs includes N-Channel and P-Channel devices in a variety of voltage, current and on-resistance ratings. Numerous packaging options are also available. • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM This MOSFET is an enhancement-mode silicon-gate power field-effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, motor drives, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits. • Photo Current - 6nA Per-RAD(Si)/s Typically • Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14Neutrons/cm2g Ordering Information RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND 10K Commercial FSYC9055D1 10K TXV FSYC9055D3 100K Commercial FSYC9055R1 100K TXV FSYC9055R3 100K Space FSYC9055R4 Reliability screening is available as either commercial, TXV equivalent of MIL-S-19500, or Space equivalent of MIL-S-19500. Contact Harris Semiconductor for any desired deviations from the data sheet. Symbol D Formerly available as type TA17750. G S Package SMD-2 CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures. Copyright © Harris Corporation 1999 1 File Number 4525.1 FSYC9055D, FSYC9055R Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulsed Avalanche Current, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . .IAS Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) FSYC9055D, FSYC9055R -60 -60 UNITS V V 59 38 177 ±20 A A A V 162 65 1.30 177 59 177 -55 to 150 300 W W W/ oC A A A oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA Zero Gate Voltage Drain Current IDSS VDS = -48V, VGS = 0V Gate to Source Leakage Current IGSS VGS = ±20V Drain to Source On-State Voltage VDS(ON) Drain to Source On Resistance rDS(ON)12 Turn-On Delay Time td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time MIN TYP MAX UNITS -60 - - V TC = -55oC - - -7.0 V TC = 25oC TC = 125oC TC = 25oC TC = 125oC TC = 25oC TC = 125oC -2.0 - -6.0 V -1.0 - - V - - 25 µA - - 250 µA - - 100 nA nA - - 200 - - -1.79 V TC = 25oC - 0.017 0.027 Ω TC = 125oC - - 0.043 Ω - - 55 ns - - 35 ns - - 85 ns - - 35 ns - - 280 nC - 140 160 nC - - 17 nC VGS = -12V, ID = 59A ID = 38A, VGS = -12V VDD = -30V, ID = 59A, RL = 0.51Ω, VGS = -12V, RGS = 2.35Ω tf Qg(TOT) VGS = 0V to -20V Gate Charge at 12V Qg(12) VGS = 0V to -12V Threshold Gate Charge Qg(TH) VGS = 0V to -2V Total Gate Charge VDD = -30V, ID = 59A Gate Charge Source Qgs - 38 49 nC Gate Charge Drain Qgd - 26 38 nC -6 - V Plateau Voltage V(PLATEAU) ID = 59A, VDS = -15V - Input Capacitance CISS 6100 - pF COSS VDS = -25V, VGS = 0V, f = 1MHz - Output Capacitance - 2200 - pF Reverse Transfer Capacitance CRSS - 300 - pF Thermal Resistance Junction to Case RθJC - - 0.77 oC/W Source to Drain Diode Specifications PARAMETER Forward Voltage Reverse Recovery Time SYMBOL VSD trr TEST CONDITIONS ISD = 59A ISD = 59A, dISD/dt = 100A/µs 2 MIN TYP MAX UNITS -0.6 - -1.8 V - - 120 ns FSYC9055D, FSYC9055R Electrical Specifications up to 100K RAD PARAMETER Drain to Source Breakdown Volts TC = 25oC, Unless Otherwise Specified MIN MAX UNITS (Note 3) SYMBOL BVDSS VGS = 0, ID = 1mA -60 - V VGS(TH) VGS = VDS, ID = 1mA -2.0 -6.0 V IGSS VGS = ±20V, VDS = 0V - 100 nA Gate to Source Threshold Volts (Note 3) Gate to Body Leakage (Notes 2, 3) TEST CONDITIONS Zero Gate Leakage (Note 3) IDSS VGS = 0, VDS = -48V - 25 µA Drain to Source On-State Volts (Notes 1, 3) VDS(ON) VGS = -12V, ID = 59A - -1.79 V Drain to Source On Resistance (Notes 1, 3) rDS(ON)12 VGS = -12V, ID = 38A - 0.027 Ω NOTES: 1. Pulse test, 300µs Max. 2. Absolute value. 3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS . Single Event Effects (SEB, SEGR) Note 4 ENVIRONMENT (NOTE 5) TEST SYMBOL Single Event Effects Safe Operating Area ION SPECIES TYPICAL LET (MeV/mg/cm) TYPICAL RANGE (µ) APPLIED VGS BIAS (V) SEESOA (NOTE 6) MAXIMUM VDS BIAS (V) Ni 26 43 20 -60 Br 37 36 10 -60 Br 37 36 15 -48 Br 37 36 20 -36 I 60 31 0 -60 I 60 31 5 -48 I 60 31 10 -36 I 60 31 15 -24 I 60 31 20 -12 NOTES: 4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN. 5. Fluence = 1E5 ions/cm2 (typical), T = 25oC. 6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR). Typical Performance Curves Unless Otherwise Specified LET = 26MeV/mg/cm2, RANGE = 43µ LET = 37MeV/mg/cm2, RANGE = 36µ LET = 60MeV/mg/cm2, RANGE = 31 µ 123-70 1E-3 FLUENCE = 1E5 IONS/cm2 (TYPICAL) VDS (V) -50 LIMITING INDUCTANCE (HENRY) -60 1 -40 -30 2 -20 3 -10 1E-4 ILM = 10A 30A 1E-5 100A 300A 1E-6 TEMP = 25oC 0 0 5 10 15 VGS (V) 20 1E-7 -10 25 -30 -100 -300 -1000 DRAIN SUPPLY (V) FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT GAMMA DOT CURRENT TO IAS 3 FSYC9055D, FSYC9055R Typical Performance Curves Unless Otherwise Specified (Continued) 500 70 TC = 25oC ID , DRAIN CURRENT (A) 60 ID , DRAIN (A) 50 40 30 20 100 1ms 10 10ms OPERATION IN THIS AREA MAY BE LIMITED BY rDS(ON) 10 0 -50 0 50 100 TC , CASE TEMPERATURE (oC) 100µs 1 -1 150 FIGURE 3. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE -10 -100 VDS , DRAIN-TO-SOURCE VOLTAGE (V) -200 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 2.5 PULSE DURATION = 250ms, VGS = 12V, ID = 38A NORMALIZED rDS(ON) 2.0 QG -12V QGS QGD 1.5 1.0 0.5 VG 0.0 -80 -40 0 40 80 120 CHARGE FIGURE 5. BASIC CHARGE WAVEFORM FIGURE 6. NORMALIZED rDS(ON) vs JUNCTION TEMPERATURE NORMALIZED THERMAL RESPONSE (ZθJC) 10 1 0.5 0.1 0.2 0.1 0.05 0.02 0.01 0.01 0.001 10-5 160 TJ , JUNCTION TEMPERATURE (oC) PDM SINGLE PULSE 10-4 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC 10-3 10-2 t1 t2 10-1 100 t, RECTANGULAR PULSE DURATION (s) FIGURE 7. NORMALIZED MAXIMUM TRANSIENT THERMAL RESPONSE 4 101 FSYC9055D, FSYC9055R Typical Performance Curves Unless Otherwise Specified (Continued) IAS , AVALANCHE CURRENT (A) 300 STARTING TJ = 25oC 100 STARTING TJ = 150oC IF R = 0 tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD) IF R ≠ 0 tAV = (L/R) ln [(IAS*R) / (1.3 RATED BVDSS - VDD) + 1] 10 0.01 0.1 1 10 tAV, TIME IN AVALANCHE (ms) FIGURE 8. UNCLAMPED INDUCTIVE SWITCHING Test Circuits and Waveforms ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDS BVDSS L tP + CURRENT I TRANSFORMER AS VDS IAS VDD - VARY tP TO OBTAIN REQUIRED PEAK IAS 0V + 50Ω - tP VDD 50V-150V DUT tAV 50Ω VGS ≤ 20V FIGURE 9. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 10. UNCLAMPED ENERGY WAVEFORMS tON VDD tOFF td(ON) td(OFF) tr RL VDS tf 90% 90% VDS 0V 10% DUT VGS = -12V 10% 90% RGS 50% VGS 50% PULSE WIDTH 10% FIGURE 11. RESISTIVE SWITCHING TEST CIRCUI FIGURE 12. RESISTIVE SWITCHING WAVEFORMS 5 FSYC9055D, FSYC9055R Screening Information Screening is performed in accordance with the latest revision in effect of MIL-S-19500, (Screening Information Table). Delta Tests and Limits (JANTXV Equivalent, JANS Equivalent) TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MAX UNITS Gate to Source Leakage Current IGSS VGS = ±20V ±20 (Note 7) nA Zero Gate Voltage Drain Current IDSS VDS = 80% Rated Value Drain to Source On Resistance rDS(ON) TC = 25oC at Rated ID Gate Threshold Voltage VGS(TH) ID = 1.0mA ±25 (Note 7) µA ±20% (Note 8) Ω ±20% (Note 8) V NOTES: 7. Or 100% of Initial Reading (whichever is greater). 8. Of Initial Reading. Screening Information TEST JANTXV EQUIVALENT JANS EQUIVALENT Gate Stress VGS = -30V, t = 250µs VGS = -30V, t = 250µs Pind Optional Required Pre Burn-In Tests (Note 9) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) MIL-S-19500 Group A, Subgroup 2 (All Static Tests at 25oC) Steady State Gate Bias (Gate Stress) MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours MIL-STD-750, Method 1042, Condition B VGS = 80% of Rated Value, TA = 150oC, Time = 48 hours Interim Electrical Tests (Note 9) All Delta Parameters Listed in the Delta Tests and Limits Table All Delta Parameters Listed in the Delta Tests and Limits Table Steady State Reverse Bias (Drain Stress) MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 160 hours MIL-STD-750, Method 1042, Condition A VDS = 80% of Rated Value, TA = 150oC, Time = 240 hours PDA 10% 5% Final Electrical Tests (Note 9) MIL-S-19500, Group A, Subgroup 2 MIL-S-19500, Group A, Subgroups 2 and 3 NOTE: 9. Test limits are identical pre and post burn-in. Additional Screening Tests PARAMETER MAX UNITS VDS = -48V, t = 10ms 9.0 A IAS VGS(PEAK) = -15V, L = 0.1mH 177 A Thermal Response ∆VSD tH = 10ms; VH = -25V; IH = 4A 65 mV Thermal Impedance ∆VSD tH = 500ms; VH = -20V; IH = 4A (Heat Sink Required) 135 mV Safe Operating Area Unclamped Inductive Switching SYMBOL SOA TEST CONDITIONS 6 FSYC9055D, FSYC9055R Rad Hard Data Packages - Harris Power Transistors TXV Equivalent C. Preconditioning - Attributes Data Sheet E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data D. Group A - Attributes Data Sheet F. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet G. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet H. Group C - Attributes Data Sheet G. Group D - Attributes Data Sheet I. Group D - Attributes Data Sheet 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart 2. Rad Hard TXV Equivalent - Optional Data Package 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data C. Assembly Flow Chart D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 7 - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FSYC9055D, FSYC9055R SMD-2 3 PAD CERAMIC LEADLESS CHIP CARRIER INCHES E D MILLIMETERS SYMBOL MIN MAX MIN MAX NOTES A 0.129 0.139 3.27 3.53 - b 0.135 0.145 3.43 3.68 - D 0.520 0.530 13.20 13.46 - D1 0.435 0.445 11.05 11.30 - D2 0.115 0.125 2.92 3.17 - E 0.685 0.695 17.40 17.65 - E1 0.470 0.480 11.94 12.19 - E2 0.152 0.162 3.86 4.11 - NOTES: 1. No current JEDEC outline for this package. 2. Controlling dimension: INCH. 3. Revision 2 dated 6-98. A E1 E2 2 D1 D2 3 1 b 1 - GATE 2 - SOURCE 3 - DRAIN 8