DMC6040SSDQ 60V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Device BVDSS Q1 N-Channel 60V Q2 P-Channel -60V Features and Benefits RDS(ON) Max 40mΩ @ VGS = 10V 55mΩ @ VGS = 4.5V 110mΩ @ VGS = -10V 130mΩ @ VGS = -4.5V ID TA = +25°C 6.5A 5.6A -3.9A -3.6A Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: DC-DC Converters Power Management Functions Backlighting Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (Approximate) D1 SO-8 Pin1 S1 D1 G1 D1 S2 D2 G2 D2 G1 G2 S1 Top View Pin Configuration Top View D2 Q1 N-Channel MOSFET S2 Q2 P-Channel MOSFET Ordering Information (Note 5) Part Number DMC6040SSDQ-13 Notes: Case SO-8 Packaging 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 C6040SD C6040SD YY WW YY WW 1 4 1 = Manufacturer’s Marking C6040SD = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 16 = 2016) WW = Week (01 - 53) 4 Chengdu A/T Site DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 1 of 9 www.diodes.com April 2016 © Diodes Incorporated DMC6040SSDQ Maximum Ratings (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 7) VGS = -10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Q1 60 ±20 5.1 4.1 Q2 -60 ±20 -3.1 -2.5 6.5 5.2 2.1 28 17.2 14.7 -3.9 -3.1 -2.1 -19 -17.6 15.4 Symbol Value 1.24 0.8 101 61 1.56 1.0 80 49 14.7 -55 to +150 ID ID Maximum Body Diode Forward Current (Note 7) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH IS IDM IAS EAS Units V V A A A A A mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic TA = +25°C TA = +70°C Steady State t < 10s TA = +25°C TA = +70°C Steady State t<10s Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Total Power Dissipation (Note 7) Thermal Resistance, Junction to Ambient (Note 7) PD RθJA PD RθJA Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RθJC TJ, TSTG Units W °C/W W °C/W °C Electrical Characteristics – N-Channel Q1 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 60 1 100 V µA nA VGS = 0V, ID = 250µA VDS = 48V, VGS = 0V VGS = 20V, VDS = 0V VGS(TH) RDS(ON) VSD 33 37 0.7 3 40 55 1.2 V Static Drain-Source On-Resistance 1 V VDS = VGS, ID = 250µA VGS = 10V, ID = 8A VGS = 4.5V, ID = 5A VGS = 0V, IS = 1A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR 1,130 69 42 1.7 20.8 9.4 3.3 3.0 3.6 1.8 20.1 4.3 14.2 7.5 pF VDS = 15V, VGS = 0V f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 4.3A ns VGS = 10V, VDD = 30V, RG = 6Ω, ID = 4.3A ns nC IS = 4.3A, dI/dt = 100A/μs IS = 4.3A, dI/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 10V) Total Gate Charge (VGS = 4.5V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ Test Condition 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 8. UIS in production with L = 0.1mH, starting TA = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 2 of 9 www.diodes.com April 2016 © Diodes Incorporated DMC6040SSDQ 20 20.0 VGS = 10V 18.0 VDS = 5.0V 18 16 VGS = 4.5V 14.0 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 16.0 VGS = 4.0V 12.0 VGS = 3.5V VGS = 3.0V 10.0 8.0 6.0 VGS = 2.8V 14 12 10 8 6 4.0 4 2.0 2 0.0 0 0 TA = 150°C TA = 85°C TA = 125°C 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics 5 0.05 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA = 25°C 0.045 0.04 VGS = 4.5V 0.035 VGS = 10V 0.03 0.025 0.02 0 2 4 6 8 10 12 14 16 18 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 2.4 2.2 R DS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION VGS = 5.0V VGS = 10V ID = 8A 2 1.8 1.6 VGS = 4.5V ID = 5A 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 5 On-Resistance Variation with Temperature DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 3 of 9 www.diodes.com TA = -55°C 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 4 0.09 VGS = 10V TA = 150°C 0.08 0.07 T A = 125°C 0.06 TA = 85°C 0.05 0.04 TA = 25°C 0.03 TA = -55°C 0.02 0.01 0 2 4 6 8 10 12 14 16 18 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs. Drain Current and Temperature 20 0.1 0.09 0.08 0.07 VGS = 4.5V ID = 5A 0.06 0.05 VGS = 10V ID = 8A 0.04 0.03 0.02 0.01 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature April 2016 © Diodes Incorporated DMC6040SSDQ 18 16 IS, SOURCE CURRENT (A) V GS(th), GATE THRESHOLD VOLTAGE (V) 20 2.1 ID = 1mA 1.8 ID = 250µA 1.5 1.2 14 12 10 8 TA = 85°C TA = 150°C 6 TA = 125°C 4 0.9 0.6 -50 0 10000 10 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 7 Gate Threshold Variation vs. Ambient Temperature TA = 25°C TA = -55°C 2 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs. Current 1.5 V GS GATE THRESHOLD VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1000 100 Coss Crss 10 0 5 10 15 20 25 30 35 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 40 8 6 VDS = 30V ID = 4.3A 4 2 0 0 2 4 6 8 10 12 14 16 18 20 22 Qg, TOTAL GATE CHARGE (nC) Figure 10 Gate Charge 100 RDS(ON) Limited 10 ID, DRAIN CURRENT (A) ADVANCE INFORMATION 2.4 DC 1 PW = 10s PW = 1s PW = 100ms 0.1 PW = 10ms PW = 1ms 0.01 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board 0.001 0.1 PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 100 4 of 9 www.diodes.com April 2016 © Diodes Incorporated DMC6040SSDQ 1 D = 0.9 D = 0.7 ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 102°C/W Duty Cycle, D = t1/ t2 D = Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 10 100 1000 Electrical Characteristics – P-Channel Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 -1 100 V µA nA VGS = 0V, ID = -250µA VDS = -48V, VGS = 0V VGS = ±16V, VDS = 0V VGS(TH) RDS(ON) VSD 91 110 -0.7 -3 110 130 -1.2 V Static Drain-Source On-Resistance -1 V VDS = VGS, ID = -250µA VGS = -10V, ID = -4.5A VGS = -4.5V, ID =-3.5A VGS = 0V, IS = -1A CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR 1,030 49.1 38.7 13.6 9.5 19.4 2.3 3.6 3.7 6.3 58.7 26.1 14.85 8.8 pF VDS = -30V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -30V, ID = -5A ns VGS = -10V, VDS = -30V, RGEN = 6Ω, ID = -5A ns nC IS = -5A, dI/dt = 100A/μs IS = -5A, dI/dt = 100A/μs Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: mΩ Test Condition 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 5 of 9 www.diodes.com April 2016 © Diodes Incorporated DMC6040SSDQ 20 20.0 VGS = -10V VGS = -5.0V VGS = -4.5V ID, DRAIN CURRENT (A) 14.0 12.0 VGS = -3.0V 8.0 VGS = -2.8V 6.0 14 12 10 8 6 4.0 4 2.0 2 0.0 TA = 150C TA = 125C 0 0 1 2 3 4 -VDS, DRAIN -SOURCE VOLTAGE (V) Figure 13 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.16 0.14 VGS = -4.5V 0.12 0.1 VGS = -10V 0.08 0.06 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 15 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = -10V ID = -12A 1.8 1.6 VGS = -4.5V ID = -5A 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Fig. 17 On-Resistance Variation with Temperature DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 6 of 9 www.diodes.com TA = 85 C TA = 25 C TA = -55C 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 14 Typical Transfer Characteristics 5 0.24 VGS = -10V 0.22 TA = 150C 0.2 0.18 TA = 125C 0.16 TA = 85 C 0.14 0.12 TA = 25 C 0.1 0.08 TA = -55C 0.06 0.04 0.02 0 20 2.2 2 1 5 0.18 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 16 VGS = -3.5V 10.0 VDS = -5.0V 18 RDS(on), DRAIN-SOURCE ON-RESISTANCE () ID, DRAIN CURRENT (A) 16.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) ADVANCE INFORMATION 18.0 VGS = -4.0V 0 2 4 6 8 10 12 14 16 18 -ID, DRAIN SOURCE CURRENT (A) Figure 16 Typical On-Resistance vs. Drain Current and Temperature 20 0.2 0.18 0.16 VGS = -4.5V ID = -3.5A 0.14 0.12 VGS = -10V ID = -4.5A 0.1 0.08 0.06 0.04 0.02 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 18 On-Resistance Variation with Temperature April 2016 © Diodes Incorporated DMC6040SSDQ 18 1.8 -IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 20 2 -I D = 1mA 1.6 -I D = 250µA 1.4 1.2 16 14 12 10 TA= 150C 8 6 TA= 125C TA= 25C 4 TA= 85C 1 2 TA= -55C 0.8 -50 0 10000 10 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Figure 19 Gate Threshold Variation vs. Ambient Temperature 0 0.3 0.6 0.9 1.2 1.5 -VSD, SOURCE-DRAIN VOLTAGE (V) Figure 20 Diode Forward Voltage vs. Current -VGS, GATE-SOURCE VOLTAGE (V) CT, JUNCTION CAPACITANCE (pF) f = 1MHz Ciss 1000 100 Coss Crss 10 0 5 10 15 20 25 30 35 -V DS, DRAIN-SOURCE VOLTAGE (V) Figure 21 Typical Junction Capacitance 40 8 6 VDS = -30V ID = -5A 4 2 0 0 2 4 6 8 10 12 14 16 18 Qg, TOTAL GATE CHARGE (nC) Figure 22 Gate-Charge Characteristics 20 100 RDS(on) Limited 10 -ID, DRAIN CURRENT (A) ADVANCE INFORMATION 2.2 1 DC PW = 10s PW = 1s 0.1 PW = 100ms PW = 10ms PW = 1ms 0.01 0.001 0.1 T J(max) = 150°C T A = 25°C VGS = -10V Single Pulse DUT on 1 * MRP Board PW = 100µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 23 SOA, Safe Operation Area DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 100 7 of 9 www.diodes.com April 2016 © Diodes Incorporated DMC6040SSDQ Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 0.254 ADVANCE INFORMATION Package Outline Dimensions E1 E Gauge Plane Seating Plane A1 L Detail ‘A’ 7°~9° h 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A – 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h – 0.35 L 0.62 0.82 0° 8° All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SO-8 X Dimensions Value (in mm) X 0.60 Y 1.55 C1 5.4 C2 1.27 C1 C2 Y DMC6040SSDQ Document number: DS38828 Rev. 1 - 2 8 of 9 www.diodes.com April 2016 © Diodes Incorporated DMC6040SSDQ ADVANCE INFORMATION IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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