PHILIPS BYW29E-150127 Rectifier diodes ultrafast, rugged Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
BYW29E series
Rectifier diodes
ultrafast, rugged
Product specification
August 2001
1;3 Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
BYW29E series
SYMBOL
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
QUICK REFERENCE DATA
VR = 100V/ 150 V/ 200 V
k
1
VF ≤ 0.895 V
a
2
IF(AV) = 8 A
IRRM ≤ 0.2 A
trr ≤ 25 ns
GENERAL DESCRIPTION
PINNING
Ultra-fast, epitaxial rectifier diodes
intended for use as output rectifiers
in high frequency switched mode
power supplies.
The BYW29E series is supplied in
the conventional leaded SOD59
(TO220AC) package.
PIN
SOD59 (TO220AC)
DESCRIPTION
1
cathode
2
anode
tab
tab
cathode
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
BYW29E
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
IRRM
IRSM
Tj
Tstg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current
Repetitive peak forward
current
Non-repetitive peak forward
current
Peak repetitive reverse
surge current
Peak non-repetitive reverse
surge current
Operating junction
temperature
Storage temperature
MAX.
UNIT
-
-100
100
-150
150
-200
200
V
-
100
150
200
V
-
100
150
200
V
square wave; δ = 0.5; Tmb ≤ 128 ˚C
-
8
A
square wave; δ = 0.5; Tmb ≤ 128 ˚C
-
16
A
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied VRRM(max)
tp = 2 μs; δ = 0.001
-
80
88
A
A
-
0.2
A
tp = 100 μs
-
0.2
A
-
150
˚C
- 40
150
˚C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
VC
Electrostatic discharge
capacitor voltage
Human body model;
C = 250 pF; R = 1.5 kΩ
August 2001
1
MIN.
MAX.
UNIT
-
8
kV
Rev 1.400
1;3 Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
MIN.
in free air
TYP. MAX. UNIT
-
-
2.7
K/W
-
60
-
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
VF
Forward voltage
IR
Reverse current
Qrr
trr1
trr2
Vfr
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
August 2001
CONDITIONS
MIN.
IF = 8 A; Tj = 150˚C
IF = 8 A
IF = 20 A
VR = VRWM
VR = VRWM; Tj = 100˚C
IF = 2 A; VR ≥ 30 V; -dIF/dt = 20 A/μs
IF = 1 A; VR ≥ 30 V; -dIF/dt = 100 A/μs
IF = 0.5 A to IR = 1 A; Irec = 0.25 A
IF = 1 A; dIF/dt = 10 A/μs
2
-
TYP. MAX. UNIT
0.8
0.92
1.1
2
0.2
4
20
15
1
0.895
1.05
1.3
10
0.6
11
25
20
-
V
V
V
μA
mA
nC
ns
ns
V
Rev 1.400
1;3 Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
I
dI
F
BYW29E series
0.5A
F
dt
IF
t
0A
rr
time
Q
10%
s
I rec = 0.25A
IR
100%
trr2
I
I
R
rrm
I = 1A
R
Fig.1. Definition of trr1, Qs and Irrm
I
Fig.4. Definition of trr2
12
F
BYW29
PF / W
Tmb(max) / C
108
D = 1.0
Vo = 0.791 V
Rs = 0.013 Ohms
115
10
0.5
8
time
122
0.2
6
129
0.1
VF
4
tp
I
V
143
t
T
0
time
Fig.2. Definition of Vfr
0
2
4
6
IF(AV) / A
8
10
150
12
Fig.5. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
R
8
PF / W
a = 1.57
Rs = 0.013 Ohms
129
2.8
5
Voltage Pulse Source
132.5
4
4
122
125.5
1.9
2.2
6
D.U.T.
Tmb(max) / C
BYW29
Vo = 0.791 V
7
136
3
139.5
2
143
1
146.5
to ’scope
0
Fig.3. Circuit schematic for trr2
August 2001
136
tp
T
2
fr
VF
Current
shunt
D=
0
1
2
3
4
IF(AV) / A
5
6
7
150
8
Fig.6. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
3
Rev 1.400
1;3 Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
trr / ns
100 Qs / nC
1000
IF=10A
5A
2A
1A
IF=10A
100
10
IF=1A
10
1
1.0
1
10
dIF/dt (A/us)
100
1.0
Fig.7. Maximum trr at Tj = 25 ˚C.
100
Fig.10. Maximum Qs at Tj = 25 ˚C.
Irrm / A
10
10
-dIF/dt (A/us)
10
IF=10A
Transient thermal impedance, Zth j-mb (K/W)
1
1
IF=1A
0.1
0.1
PD
0.01
0.001
1us
0.01
10
-dIF/dt (A/us)
1
100
Fig.8. Maximum Irrm at Tj = 25 ˚C.
30
tp
D=
T
10us
tp
T
t
100us 1ms
10ms 100ms
1s
10s
pulse width, tp (s)
PBYL1025
Fig.11. Transient thermal impedance; Zth j-mb = f(tp).
BYW29
IF / A
Tj=150 C
Tj=25 C
20
typ
max
10
0
0
0.5
1
VF / V
1.5
2
Fig.9. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
August 2001
4
Rev 1.400
1;3 Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYW29E series
MECHANICAL DATA
Dimensions in mm
Plastic single-ended package; heatsink mounted; 1 mounting hole; 2-lead TO-220
SOD59
Net Mass: 2 g
E
A
A1
P
q
D1
D
L1
L2(1)
Q
b1
L
1
2
c
b
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
b
b1
c
D
D1
E
e
L
L1
mm
4.5
4.1
1.39
1.27
0.9
0.7
1.3
1.0
0.7
0.4
15.8
15.2
6.4
5.9
10.3
9.7
5.08
15.0
13.5
3.30
2.79
L2
(1)
3.0
P
q
Q
3.8
3.6
3.0
2.7
2.6
2.2
Note
1. Terminals in this zone are not tinned.
OUTLINE
VERSION
SOD59
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
2-lead TO-220
ISSUE DATE
97-06-11
Fig.12. TO220AC; pin 1 connected to mounting base.
Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 2001
5
Rev 1.400
NXP Semiconductors
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DOCUMENT
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